JP4458804B2 - 白色led - Google Patents
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- JP4458804B2 JP4458804B2 JP2003358575A JP2003358575A JP4458804B2 JP 4458804 B2 JP4458804 B2 JP 4458804B2 JP 2003358575 A JP2003358575 A JP 2003358575A JP 2003358575 A JP2003358575 A JP 2003358575A JP 4458804 B2 JP4458804 B2 JP 4458804B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 39
- 238000007789 sealing Methods 0.000 claims description 31
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- 229920005989 resin Polymers 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 27
- 238000005286 illumination Methods 0.000 claims description 26
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- 238000010586 diagram Methods 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- 238000000295 emission spectrum Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 1
- LEYJJTBJCFGAQN-UHFFFAOYSA-N chembl1985378 Chemical compound OC1=CC=C2C=CC=CC2=C1N=NC(C=C1)=CC=C1N=NC1=CC=C(S(O)(=O)=O)C=C1 LEYJJTBJCFGAQN-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- ORFSSYGWXNGVFB-UHFFFAOYSA-N sodium 4-amino-6-[[4-[4-[(8-amino-1-hydroxy-5,7-disulfonaphthalen-2-yl)diazenyl]-3-methoxyphenyl]-2-methoxyphenyl]diazenyl]-5-hydroxynaphthalene-1,3-disulfonic acid Chemical compound COC1=C(C=CC(=C1)C2=CC(=C(C=C2)N=NC3=C(C4=C(C=C3)C(=CC(=C4N)S(=O)(=O)O)S(=O)(=O)O)O)OC)N=NC5=C(C6=C(C=C5)C(=CC(=C6N)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] ORFSSYGWXNGVFB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/72—Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
即ち、自然光のスペクトル特性とは違いが大きくなる。そのために、演色性は低くなり、
Ra=12程度となる(自然光の場合はRa=100)。なお、演色性が低くなると、物体の反射光を検出するスキャナー装置等読み取り装置、その他の照明の光源として用いるには不適当となると考えられる。
この白色LEDの構造を、便宜上、表面実装型のLEDの構造に直して図8に示す。図8(a)は全体の構造を示す図、図8(b)はその要部を示す図である。図8において、110は白色LEDである。白色LED110は、接続用の電極パターン103、104を設けた絶縁基板102の上にINGaN系の青色LED素子101を固定し、青色LED素子101の一方の電極101a(p層電極)をワイヤー106により電極パターン103に接続し、他方の電極101b(n層電極)をワイヤー106により電極パターン104に接続した後、YAG蛍光体等の蛍光体108を分散させた樹脂よりなる封止部材107によりこれらを封止することにより形成される。このような構成により、例えば460nm付近にピーク波長を有する青色LED素子101の発光sbの一部は上記の蛍光体108に吸収され、ピーク波長が560nm前後の黄緑色syの光に波長変換される。この結果、この白色LED110の発光のスペクトルは図7(b)のS2に示すように、ピーク波長が460nmの青色LED素子101からの発光と、ピーク波長が560nmの蛍光体108からの発光が見られる。これからもわかるように、この白色LED110は可視光線領域のほとんどの領域で発光するため、演色性が良く、平均演色評価数Raが80を超えている。よって、前記の多色混合型のLED(特許文献1)のような演色性の低下の問題は改善される。
以下に、この赤色補正方式の蛍光体混色型の白色LEDについて説明する。
および赤色LED素子5の上を、粒子状のYAG蛍光体8を透明なモールド樹脂内に混入、分散させてなる封止樹脂部材10をモールドして被覆し封止する。ここで、11は基板1の上でその周辺部に配置され封止樹脂部材10を囲む樹脂枠であり、前記の、封止樹脂部材10を形成する際に、その形状を規定するとともにし、溶融したモールド樹脂が基板1の裏側やスルーホールにまで流れ出すのを防止する役割をなす。12は封止樹脂部材10の上面において、赤色LED素子5の上方の部分を覆うようにして形成された遮光性の遮光膜である。これにより、赤色LED素子5の発する赤色光srが点状の赤色として上面から直接に見えてしまうことを防止している。以上のようにして本実施例1に係る表面実装型の白色LED20が構成される。
なお、副次的な効果としては、例えば、発光波長が480nmを狙って製造した長波青色LED素子の発光波長がバラついている場合、長波長青色LED素子(14a、14b)として発光波長が480nm以下のものと480nm以上のものを組み合わせ、その発光強度を適切に調整することにより、緑色領域における演色性を所望の値に補正することも可能となる。
2a、2b、23a、23b、24a、24b 青色用接続電極
3a、3b、25a、25b 赤色用接続電極
4、14a、14b 長波長青色LED素子
4a、5a p層電極
4b n層電極
4c サファイア絶縁基板
5 赤色LED素子
5b n層
6 ワイヤー
7 スルーホール
8 YAG蛍光体
9 Agペースト
10、19、50 封止部材
11、51 樹脂枠
12 遮光膜
20、30、40 白色LED
31 反射枠体
32 凹部
32c 反射面
44a、44b、44c、44d 長波長青色LED素子
45 赤色LED素子
52 半透明樹脂
54a1、54b1、・・・、54d1、54d2 長波長青色LED素子対応接続電極
55a、55b 赤色接続電極
sb1 長波長青色光
sr 赤色光
sy 蛍光体励起光
Claims (9)
- 発光波長の互いに異なる第1のLED素子と第2のLED素子を有し、すくなくとも第1のLED素子は黄色の励起光を発する蛍光体を含有する封止部材により封止されてなり、全体として外部に白色系の照明光を出射する白色LEDにおいて、
前記第1のLED素子はピーク波長が470nm〜490nmの長波長の青色を発光する長波長青色LED素子であり、前記第2のLED素子はピーク波長が620nm〜660nmの赤色を発光する赤色LED素子であり、前記長波長青色LED素子と前記赤色LED素子はYAG蛍光体を含有する前記封止部材により一括して封止され、前記封止部材の前記長波長青色LED素子の真上を除く上面が、発光している前記赤色LED素子が点状のものとして上部から見えるのを防止する遮光膜で、前記封止部材の側面が樹脂枠で囲われることにより、前記長波長の青色光と前記黄色の励起光と前記赤色光とによる混合色が赤味がからない白色光になって前記長波長青色LED素子の真上からのみ投射されることを特徴とする白色LED。 - 前記第1のLED素子と前記第2のLED素子は、それぞれ独立した端子に電気的に接続され、前記第1のLED素子である長波長青色LED素子と前記第2のLED素子である赤色LED素子の通電の制御が個別にできるようにされていることを特徴とする請求項1に記載の白色LED。
- 前記第2のLED素子である赤色LED素子は1個であり、前記第1のLED素子である長波長青色LED素子は複数個よりなることを特徴とする請求項2に記載の白色LED。
- 前記複数個の長波長青色LED素子の各々は、それぞれ独立した端子に電気的に接続され、それぞれに対し通電の制御が個別にできるようにされていることを特徴とする請求項3に記載の白色LED。
- 前記第1のLED素子と前記第2のLED素子は、それぞれに対応する導通電極手段が形成された共通の基板に搭載され、黄色の励起光を発する蛍光体を含有する封止部材により封止されてなることを特徴とする請求項1乃至請求項4のいずれかに記載の白色LED。
- 前記第1のLED素子と前記第2のLED素子が搭載された共通の基板上の前記封止部材の周辺に、凹部に形成した反射面を有する反射部材を取り付けたことを特徴とする請求項5に記載の白色LED。
- 前記長波長青色LED素子は、GaN系であることを特徴とする請求項1乃至請求項6のいずれかに記載の白色LED。
- 前記赤色LED素子はGaAlAsもしくはGaAlInPよりなることを特徴とする請求項1乃至請求項6のいずれかに記載の白色LED。
- 前記独立した端子は、スルーホールに導通するスルーホール電極であることを特徴とする請求項1乃至請求項6のいずれかに記載の白色LED。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003358575A JP4458804B2 (ja) | 2003-10-17 | 2003-10-17 | 白色led |
DE102004049880A DE102004049880A1 (de) | 2003-10-17 | 2004-10-13 | Weißes Licht emittierende Diode |
CNB2004100841978A CN100411202C (zh) | 2003-10-17 | 2004-10-15 | 白光发光二极管 |
US10/965,177 US7365485B2 (en) | 2003-10-17 | 2004-10-15 | White light emitting diode with first and second LED elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003358575A JP4458804B2 (ja) | 2003-10-17 | 2003-10-17 | 白色led |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005123484A JP2005123484A (ja) | 2005-05-12 |
JP4458804B2 true JP4458804B2 (ja) | 2010-04-28 |
Family
ID=34509854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003358575A Expired - Fee Related JP4458804B2 (ja) | 2003-10-17 | 2003-10-17 | 白色led |
Country Status (4)
Country | Link |
---|---|
US (1) | US7365485B2 (ja) |
JP (1) | JP4458804B2 (ja) |
CN (1) | CN100411202C (ja) |
DE (1) | DE102004049880A1 (ja) |
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US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US7066623B2 (en) * | 2003-12-19 | 2006-06-27 | Soo Ghee Lee | Method and apparatus for producing untainted white light using off-white light emitting diodes |
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CN1610137A (zh) | 2005-04-27 |
US7365485B2 (en) | 2008-04-29 |
US20050082974A1 (en) | 2005-04-21 |
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