BR112013029686A2 - estrutura de flip chip de diodo emissor de luz e método de formação de uma estrutura de flip chip de diodo emissor de luz - Google Patents
estrutura de flip chip de diodo emissor de luz e método de formação de uma estrutura de flip chip de diodo emissor de luzInfo
- Publication number
- BR112013029686A2 BR112013029686A2 BR112013029686A BR112013029686A BR112013029686A2 BR 112013029686 A2 BR112013029686 A2 BR 112013029686A2 BR 112013029686 A BR112013029686 A BR 112013029686A BR 112013029686 A BR112013029686 A BR 112013029686A BR 112013029686 A2 BR112013029686 A2 BR 112013029686A2
- Authority
- BR
- Brazil
- Prior art keywords
- led
- layer
- flip chip
- chip structure
- led flip
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
resumo estrutura de flip chip de diodo emissor de luz e método de formação de uma estrutura de flip chip de diodo emissor de luz uma estrutura de diodo emissor de luz (led) possui camadas semicondutoras, que incluem uma camada do tipo p, uma camada ativa e uma camada do tipo n. a camada do tipo p possui uma superfície inferior e a camada do tipo n possui uma superfície superior através da qual é emitida luz. partes da camada do tipo p e da camada ativa são retiradas em seguida por meio de corrosão para expor a camada do tipo n. a superfície do led é padronizada com um fotorresistor e cobre é revestido sobre as superfícies expostas para formar eletrodos p e n em contato elétrico com as suas camadas semicondutoras correspondentes. existe um espaço entre os eletrodos n e p. para fornecer suporte mecânico das camadas semicondutoras entre o espaço, uma camada dielétrica é formada no espaço seguido por enchimento do espaço com metal. o metal é padronizado para formar pinos que cobrem substancialmente a superfície inferior do molde de led, mas não entram em contato com os eletrodos. a cobertura substancialmente uniforme sustenta a camada semicondutora durante etapas de processo subsequentes. 1/1
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201161489280P | 2011-05-24 | 2011-05-24 | |
PCT/IB2012/052062 WO2012160455A1 (en) | 2011-05-24 | 2012-04-25 | P-n separation metal fill for flip chip leds |
Publications (1)
Publication Number | Publication Date |
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BR112013029686A2 true BR112013029686A2 (pt) | 2017-01-17 |
Family
ID=46148910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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BR112013029686A BR112013029686A2 (pt) | 2011-05-24 | 2012-04-25 | estrutura de flip chip de diodo emissor de luz e método de formação de uma estrutura de flip chip de diodo emissor de luz |
Country Status (9)
Country | Link |
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US (3) | US9219209B2 (pt) |
EP (1) | EP2715813B1 (pt) |
JP (1) | JP5990574B2 (pt) |
KR (1) | KR101932996B1 (pt) |
CN (1) | CN103548162B (pt) |
BR (1) | BR112013029686A2 (pt) |
RU (1) | RU2597071C2 (pt) |
TW (1) | TWI569469B (pt) |
WO (1) | WO2012160455A1 (pt) |
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CN105591006A (zh) * | 2014-10-20 | 2016-05-18 | 展晶科技(深圳)有限公司 | 覆晶式led封装体 |
US9896777B2 (en) | 2015-10-30 | 2018-02-20 | Essential Products, Inc. | Methods of manufacturing structures having concealed components |
US10158164B2 (en) | 2015-10-30 | 2018-12-18 | Essential Products, Inc. | Handheld mobile device with hidden antenna formed of metal injection molded substrate |
US10741486B2 (en) | 2016-03-06 | 2020-08-11 | Intel Corporation | Electronic components having three-dimensional capacitors in a metallization stack |
US11024611B1 (en) * | 2017-06-09 | 2021-06-01 | Goertek, Inc. | Micro-LED array transfer method, manufacturing method and display device |
US11183616B2 (en) * | 2018-09-26 | 2021-11-23 | Lumileds Llc | Phosphor converter structures for thin film packages and method of manufacture |
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CN114284413B (zh) * | 2021-12-30 | 2023-04-11 | 江苏第三代半导体研究院有限公司 | 半导体器件的电极制作方法及半导体器件 |
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KR101497953B1 (ko) * | 2008-10-01 | 2015-03-05 | 삼성전자 주식회사 | 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
US7875984B2 (en) * | 2009-03-04 | 2011-01-25 | Koninklijke Philips Electronics N.V. | Complaint bonding structures for semiconductor devices |
JP2011071339A (ja) * | 2009-09-25 | 2011-04-07 | Toyoda Gosei Co Ltd | 発光素子 |
KR101007137B1 (ko) * | 2010-03-08 | 2011-01-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
JP5356312B2 (ja) * | 2010-05-24 | 2013-12-04 | 株式会社東芝 | 半導体発光装置 |
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2012
- 2012-04-25 KR KR1020137033889A patent/KR101932996B1/ko active IP Right Grant
- 2012-04-25 WO PCT/IB2012/052062 patent/WO2012160455A1/en active Application Filing
- 2012-04-25 EP EP12723243.7A patent/EP2715813B1/en active Active
- 2012-04-25 BR BR112013029686A patent/BR112013029686A2/pt not_active IP Right Cessation
- 2012-04-25 CN CN201280024680.XA patent/CN103548162B/zh active Active
- 2012-04-25 US US14/112,279 patent/US9219209B2/en active Active
- 2012-04-25 RU RU2013156628/28A patent/RU2597071C2/ru active
- 2012-04-25 JP JP2014511976A patent/JP5990574B2/ja active Active
- 2012-05-23 TW TW101118425A patent/TWI569469B/zh active
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2015
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Also Published As
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US20170373235A1 (en) | 2017-12-28 |
EP2715813A1 (en) | 2014-04-09 |
CN103548162A (zh) | 2014-01-29 |
US9219209B2 (en) | 2015-12-22 |
RU2013156628A (ru) | 2015-06-27 |
TW201301564A (zh) | 2013-01-01 |
JP5990574B2 (ja) | 2016-09-14 |
TWI569469B (zh) | 2017-02-01 |
KR20140030264A (ko) | 2014-03-11 |
CN103548162B (zh) | 2016-11-09 |
KR101932996B1 (ko) | 2018-12-27 |
JP2014515557A (ja) | 2014-06-30 |
EP2715813B1 (en) | 2019-07-24 |
US20140061714A1 (en) | 2014-03-06 |
US20160126436A1 (en) | 2016-05-05 |
US10170675B2 (en) | 2019-01-01 |
RU2597071C2 (ru) | 2016-09-10 |
US9722161B2 (en) | 2017-08-01 |
WO2012160455A1 (en) | 2012-11-29 |
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