ES2539975T3 - Procedimiento para la pasivación con hidrógeno de unas capas de semiconductores - Google Patents

Procedimiento para la pasivación con hidrógeno de unas capas de semiconductores Download PDF

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Publication number
ES2539975T3
ES2539975T3 ES11779713.4T ES11779713T ES2539975T3 ES 2539975 T3 ES2539975 T3 ES 2539975T3 ES 11779713 T ES11779713 T ES 11779713T ES 2539975 T3 ES2539975 T3 ES 2539975T3
Authority
ES
Spain
Prior art keywords
procedure
semiconductor layers
hydrogen passivation
passivation
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES11779713.4T
Other languages
English (en)
Inventor
Patrik Stenner
Stephan Wieber
Michael CÖLLE
Matthias Patz
Reinhard Carius
Torsten Bronger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Evonik Degussa GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa GmbH filed Critical Evonik Degussa GmbH
Application granted granted Critical
Publication of ES2539975T3 publication Critical patent/ES2539975T3/es
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procedimiento para la pasivación con hidrógeno de capas de semiconductores, caracterizado por que la pasivación se efectúa mediante el empleo de una fuente de plasma con un arco eléctrico.

Description

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Claims (1)

  1. imagen1
ES11779713.4T 2010-12-03 2011-11-11 Procedimiento para la pasivación con hidrógeno de unas capas de semiconductores Active ES2539975T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010053214A DE102010053214A1 (de) 2010-12-03 2010-12-03 Verfahren zur Wasserstoffpassivierung von Halbleiterschichten
DE102010053214 2010-12-03
PCT/EP2011/069921 WO2012072403A1 (de) 2010-12-03 2011-11-11 Verfahren zur wasserstoffpassivierung von halbleiterschichten

Publications (1)

Publication Number Publication Date
ES2539975T3 true ES2539975T3 (es) 2015-07-07

Family

ID=44913324

Family Applications (1)

Application Number Title Priority Date Filing Date
ES11779713.4T Active ES2539975T3 (es) 2010-12-03 2011-11-11 Procedimiento para la pasivación con hidrógeno de unas capas de semiconductores

Country Status (10)

Country Link
US (1) US20130328175A1 (es)
EP (1) EP2647037B1 (es)
JP (1) JP6066094B2 (es)
KR (1) KR20130126627A (es)
CN (1) CN103262219A (es)
DE (1) DE102010053214A1 (es)
ES (1) ES2539975T3 (es)
MY (1) MY164244A (es)
TW (1) TWI538016B (es)
WO (1) WO2012072403A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
DE102010041842A1 (de) 2010-10-01 2012-04-05 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilanverbindungen
DE102010062984A1 (de) 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
US9647090B2 (en) * 2014-12-30 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface passivation for germanium-based semiconductor structure
CN110783183B (zh) * 2019-10-15 2022-04-15 中国电子科技集团公司第十一研究所 硅基衬底的加工方法
CN112086539A (zh) * 2020-08-29 2020-12-15 复旦大学 一种高压氢钝化提升晶硅电池效率的方法

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JPS5847466B2 (ja) * 1977-03-18 1983-10-22 富士通株式会社 プラズマアッシング方法
US4343830A (en) 1980-11-13 1982-08-10 Motorola, Inc. Method for improving the efficiency of solar cells having imperfections
DE3777748D1 (de) 1986-10-24 1992-04-30 Siemens Ag Verfahren zur passivierung von kristalldefekten in einem wasserstoffplasma.
JPH0814023B2 (ja) * 1987-09-02 1996-02-14 富士通株式会社 高圧相窒化ホウ素の気相合成法
EP0419693A1 (de) 1989-09-25 1991-04-03 Siemens Aktiengesellschaft Verfahren zur Passivierung von Kristalldefekten in poly-kristallinem Silizium-Material
US5304509A (en) 1992-08-24 1994-04-19 Midwest Research Institute Back-side hydrogenation technique for defect passivation in silicon solar cells
KR960000190B1 (ko) * 1992-11-09 1996-01-03 엘지전자주식회사 반도체 제조방법 및 그 장치
US5462898A (en) * 1994-05-25 1995-10-31 Georgia Tech Research Corporation Methods for passivating silicon devices at low temperature to achieve low interface state density and low recombination velocity while preserving carrier lifetime
DE19532412C2 (de) * 1995-09-01 1999-09-30 Agrodyn Hochspannungstechnik G Vorrichtung zur Oberflächen-Vorbehandlung von Werkstücken
JP3364119B2 (ja) * 1996-09-02 2003-01-08 東京瓦斯株式会社 水素終端ダイヤモンドｍｉｓｆｅｔおよびその製造方法
JPH11145148A (ja) * 1997-11-06 1999-05-28 Tdk Corp 熱プラズマアニール装置およびアニール方法
JP3982402B2 (ja) * 2002-02-28 2007-09-26 東京エレクトロン株式会社 処理装置及び処理方法
US20040040833A1 (en) * 2002-08-27 2004-03-04 General Electric Company Apparatus and method for plasma treating an article
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TW201140866A (en) * 2009-12-07 2011-11-16 Applied Materials Inc Method of cleaning and forming a negatively charged passivation layer over a doped region
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Also Published As

Publication number Publication date
JP6066094B2 (ja) 2017-01-25
TW201250782A (en) 2012-12-16
US20130328175A1 (en) 2013-12-12
EP2647037B1 (de) 2015-04-01
TWI538016B (zh) 2016-06-11
MY164244A (en) 2017-11-30
WO2012072403A1 (de) 2012-06-07
KR20130126627A (ko) 2013-11-20
DE102010053214A1 (de) 2012-06-06
JP2014504446A (ja) 2014-02-20
EP2647037A1 (de) 2013-10-09
CN103262219A (zh) 2013-08-21

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