IN2012DE00204A - - Google Patents
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- Publication number
- IN2012DE00204A IN2012DE00204A IN204DE2012A IN2012DE00204A IN 2012DE00204 A IN2012DE00204 A IN 2012DE00204A IN 204DE2012 A IN204DE2012 A IN 204DE2012A IN 2012DE00204 A IN2012DE00204 A IN 2012DE00204A
- Authority
- IN
- India
- Prior art keywords
- semiconductor layer
- photovoltaic device
- interlayer
- type semiconductor
- tellurium
- Prior art date
Links
- 239000010410 layer Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/018,650 US20120192923A1 (en) | 2011-02-01 | 2011-02-01 | Photovoltaic device |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DE00204A true IN2012DE00204A (es) | 2015-06-19 |
Family
ID=45528997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN204DE2012 IN2012DE00204A (es) | 2011-02-01 | 2012-01-24 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120192923A1 (es) |
EP (1) | EP2482329A3 (es) |
CN (1) | CN102629631A (es) |
AU (1) | AU2012200546A1 (es) |
IN (1) | IN2012DE00204A (es) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9231134B2 (en) * | 2012-08-31 | 2016-01-05 | First Solar, Inc. | Photovoltaic devices |
CN102891204B (zh) * | 2012-10-17 | 2015-03-18 | 上海太阳能电池研究与发展中心 | 一种下层配置的n-i-p结构的CdTe薄膜太阳能电池 |
US9698285B2 (en) | 2013-02-01 | 2017-07-04 | First Solar, Inc. | Photovoltaic device including a P-N junction and method of manufacturing |
US20140246083A1 (en) * | 2013-03-01 | 2014-09-04 | First Solar, Inc. | Photovoltaic devices and method of making |
US11876140B2 (en) * | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
CN104183663B (zh) | 2013-05-21 | 2017-04-12 | 第一太阳能马来西亚有限公司 | 光伏器件及其制备方法 |
US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
CN104064618A (zh) * | 2014-05-16 | 2014-09-24 | 中国科学院电工研究所 | 一种p-i-n结构CdTe电池及其制备方法 |
US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6137048A (en) * | 1996-11-07 | 2000-10-24 | Midwest Research Institute | Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby |
US6852614B1 (en) * | 2000-03-24 | 2005-02-08 | University Of Maine | Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen |
MX2010003227A (es) * | 2007-09-25 | 2010-04-07 | First Solar Inc | Dispositivos fotovoltaicos que incluyen una capa interfacial. |
US8298856B2 (en) * | 2008-07-17 | 2012-10-30 | Uriel Solar, Inc. | Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation |
US8084682B2 (en) * | 2009-01-21 | 2011-12-27 | Yung-Tin Chen | Multiple band gapped cadmium telluride photovoltaic devices and process for making the same |
US20110139249A1 (en) * | 2009-12-10 | 2011-06-16 | Uriel Solar Inc. | High Power Efficiency Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures for Use in Solar Electricity Generation |
US20120024360A1 (en) * | 2010-07-28 | 2012-02-02 | General Electric Company | Photovoltaic device |
-
2011
- 2011-02-01 US US13/018,650 patent/US20120192923A1/en not_active Abandoned
-
2012
- 2012-01-24 IN IN204DE2012 patent/IN2012DE00204A/en unknown
- 2012-01-27 EP EP12152900.2A patent/EP2482329A3/en not_active Withdrawn
- 2012-01-31 AU AU2012200546A patent/AU2012200546A1/en not_active Abandoned
- 2012-02-01 CN CN2012100284926A patent/CN102629631A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP2482329A3 (en) | 2015-04-08 |
US20120192923A1 (en) | 2012-08-02 |
CN102629631A (zh) | 2012-08-08 |
EP2482329A2 (en) | 2012-08-01 |
AU2012200546A1 (en) | 2012-08-16 |
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