TWI799788B - 高諧波產生源、度量衡設備、微影製造單元及用於在照明源中輸送氣體之方法 - Google Patents

高諧波產生源、度量衡設備、微影製造單元及用於在照明源中輸送氣體之方法 Download PDF

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Publication number
TWI799788B
TWI799788B TW110104639A TW110104639A TWI799788B TW I799788 B TWI799788 B TW I799788B TW 110104639 A TW110104639 A TW 110104639A TW 110104639 A TW110104639 A TW 110104639A TW I799788 B TWI799788 B TW I799788B
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TW
Taiwan
Prior art keywords
methods
illumination source
harmonic generation
generation sources
delivering gas
Prior art date
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TW110104639A
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English (en)
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TW202129435A (zh
Inventor
蘇迪爾 斯瑞法斯塔瓦
山德 巴斯 盧波
賽門 吉司伯 喬瑟佛思 麥提森
林楠
史喬德 尼可拉斯 蘭伯特 唐德斯
可瑞恩 弗瑞德瑞克 布斯卓恩
比特斯 威爾赫瑪斯 史莫倫伯格
傑瑞特 賈寇巴斯 亨利德斯 布魯薩爾德
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
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Priority claimed from EP17160996.9A external-priority patent/EP3376288A1/en
Application filed by 荷蘭商Ａｓｍｌ荷蘭公司 filed Critical 荷蘭商Ａｓｍｌ荷蘭公司
Publication of TW202129435A publication Critical patent/TW202129435A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/354—Third or higher harmonic generation
TW110104639A 2017-03-15 2018-03-08 高諧波產生源、度量衡設備、微影製造單元及用於在照明源中輸送氣體之方法 TWI799788B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
EP17160996.9A EP3376288A1 (en) 2017-03-15 2017-03-15 Apparatus for delivering gas
EP17160996.9 2017-03-15
EP17175640 2017-06-13
EP17175640.6 2017-06-13
EP17189172.4 2017-09-04
EP17189172 2017-09-04

Publications (2)

Publication Number Publication Date
TW202129435A TW202129435A (zh) 2021-08-01
TWI799788B true TWI799788B (zh) 2023-04-21

Family

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Family Applications (3)

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TW108129903A TWI720590B (zh) 2017-03-15 2018-03-08 用於輸送氣體之設備及用於產生高諧波輻射之照明源
TW107107796A TWI720295B (zh) 2017-03-15 2018-03-08 用於輸送氣體之設備及用於產生高諧波輻射之照明源
TW110104639A TWI799788B (zh) 2017-03-15 2018-03-08 高諧波產生源、度量衡設備、微影製造單元及用於在照明源中輸送氣體之方法

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TW108129903A TWI720590B (zh) 2017-03-15 2018-03-08 用於輸送氣體之設備及用於產生高諧波輻射之照明源
TW107107796A TWI720295B (zh) 2017-03-15 2018-03-08 用於輸送氣體之設備及用於產生高諧波輻射之照明源

Country Status (6)

Country Link
US (2) US10530111B2 (zh)
KR (2) KR102323993B1 (zh)
CN (2) CN115793401A (zh)
IL (1) IL268710B2 (zh)
TW (3) TWI720590B (zh)
WO (1) WO2018166741A1 (zh)

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KR102323993B1 (ko) 2017-03-15 2021-11-10 에이에스엠엘 네델란즈 비.브이. 가스를 전달하는 장치 및 고조파 방사선을 발생시키는 조명 소스
US10877378B2 (en) 2018-09-28 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Vessel for extreme ultraviolet radiation source
EP3839621A1 (en) 2019-12-16 2021-06-23 ASML Netherlands B.V. An illumination source and associated metrology apparatus
US20220382124A1 (en) * 2019-10-17 2022-12-01 Asml Netherlands B.V. An illumination source and associated metrology apparatus

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Also Published As

Publication number Publication date
US10630037B2 (en) 2020-04-21
KR20210135002A (ko) 2021-11-11
CN115793401A (zh) 2023-03-14
CN110462521A (zh) 2019-11-15
CN110462521B (zh) 2022-10-18
TW201940997A (zh) 2019-10-16
TW202129435A (zh) 2021-08-01
IL268710A (en) 2019-10-31
TWI720295B (zh) 2021-03-01
TW201901304A (zh) 2019-01-01
US10530111B2 (en) 2020-01-07
US20180267411A1 (en) 2018-09-20
IL268710B2 (en) 2024-03-01
IL268710B1 (en) 2023-11-01
KR20190125467A (ko) 2019-11-06
KR102323993B1 (ko) 2021-11-10
WO2018166741A1 (en) 2018-09-20
KR102599417B1 (ko) 2023-11-08
TWI720590B (zh) 2021-03-01
US20190212657A1 (en) 2019-07-11

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