JP2010135332A5 - - Google Patents

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Publication number
JP2010135332A5
JP2010135332A5 JP2010000264A JP2010000264A JP2010135332A5 JP 2010135332 A5 JP2010135332 A5 JP 2010135332A5 JP 2010000264 A JP2010000264 A JP 2010000264A JP 2010000264 A JP2010000264 A JP 2010000264A JP 2010135332 A5 JP2010135332 A5 JP 2010135332A5
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Japan
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substrate
silicon
electrode
electrode according
lithium
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JP2010000264A
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Japanese (ja)
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JP5603084B2 (ja
JP2010135332A (ja
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Priority claimed from GB0225779A external-priority patent/GB2395059B/en
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JP2010000264A 2002-11-05 2010-01-04 構造化シリコンアノード Expired - Fee Related JP5603084B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0225779.8 2002-11-05
GB0225779A GB2395059B (en) 2002-11-05 2002-11-05 Structured silicon anode

Related Parent Applications (1)

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JP2004549349A Division JP4607594B2 (ja) 2002-11-05 2003-11-05 構造化シリコンアノード

Publications (3)

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JP2010135332A JP2010135332A (ja) 2010-06-17
JP2010135332A5 true JP2010135332A5 (cg-RX-API-DMAC7.html) 2011-12-08
JP5603084B2 JP5603084B2 (ja) 2014-10-08

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JP2004549349A Expired - Fee Related JP4607594B2 (ja) 2002-11-05 2003-11-05 構造化シリコンアノード
JP2009200060A Expired - Lifetime JP4723665B2 (ja) 2002-11-05 2009-08-31 構造化シリコンアノード
JP2010000264A Expired - Fee Related JP5603084B2 (ja) 2002-11-05 2010-01-04 構造化シリコンアノード

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JP2004549349A Expired - Fee Related JP4607594B2 (ja) 2002-11-05 2003-11-05 構造化シリコンアノード
JP2009200060A Expired - Lifetime JP4723665B2 (ja) 2002-11-05 2009-08-31 構造化シリコンアノード

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US (5) US7402829B2 (cg-RX-API-DMAC7.html)
EP (2) EP2363908A1 (cg-RX-API-DMAC7.html)
JP (3) JP4607594B2 (cg-RX-API-DMAC7.html)
KR (1) KR100785695B1 (cg-RX-API-DMAC7.html)
CN (1) CN100399606C (cg-RX-API-DMAC7.html)
AU (1) AU2003276468A1 (cg-RX-API-DMAC7.html)
CA (1) CA2504634C (cg-RX-API-DMAC7.html)
GB (1) GB2395059B (cg-RX-API-DMAC7.html)
IL (1) IL168377A (cg-RX-API-DMAC7.html)
RU (1) RU2325008C2 (cg-RX-API-DMAC7.html)
WO (1) WO2004042851A2 (cg-RX-API-DMAC7.html)

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