GB980513A - Improvements relating to the use of silicon in semi-conductor devices - Google Patents
Improvements relating to the use of silicon in semi-conductor devicesInfo
- Publication number
- GB980513A GB980513A GB4126661A GB4126661A GB980513A GB 980513 A GB980513 A GB 980513A GB 4126661 A GB4126661 A GB 4126661A GB 4126661 A GB4126661 A GB 4126661A GB 980513 A GB980513 A GB 980513A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solution
- etching
- volumes
- silicon
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000243 solution Substances 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 2
- 239000008367 deionised water Substances 0.000 abstract 2
- 229910021641 deionized water Inorganic materials 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000011575 calcium Substances 0.000 abstract 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 abstract 1
- 150000003841 chloride salts Chemical class 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 150000002823 nitrates Chemical class 0.000 abstract 1
- 239000012266 salt solution Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
980,513. Semi-conductor devices. LICENTIA PATENT - VERWALTUNGS - G.m.b.H. Nov. 17, 1961, No. 41266/61. Heading H1K. A silicon body to which material is subsequently alloyed to form a PN junction is prepared by etching in a solution containing nitric and hydrofluoric acids, to which before or during etching, alkali or alkaline earth metal ions are added. In a typical process silicon discs are etched to within 40Á of the required thickness in a solution of 2-4 volumes nitric, 4-2 volumes hydrofluoric and 6 volumes acetic acid of specified concentration and rinsed in deionized water. After etching to the desired thickness in a fresh solution of the acids a 10% by weight solution of an alkali or alkaline earth salt is added to form between 2 and 10% of the solution and etching continued for two minutes while the solution is agitated. The discs are then rinsed in deionized water and stored in alcohol until the alloying process. Suitable salt solutions are the chlorides, nitrates or carbonates of magnesium, calcium, barium and strontium. The method is said to be particularly suited to the production of rectifiers, transistors and photo-cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4126661A GB980513A (en) | 1961-11-17 | 1961-11-17 | Improvements relating to the use of silicon in semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4126661A GB980513A (en) | 1961-11-17 | 1961-11-17 | Improvements relating to the use of silicon in semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB980513A true GB980513A (en) | 1965-01-13 |
Family
ID=10418904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4126661A Expired GB980513A (en) | 1961-11-17 | 1961-11-17 | Improvements relating to the use of silicon in semi-conductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB980513A (en) |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2022335A1 (en) * | 1968-10-31 | 1970-07-31 | Gen Electric | |
| FR2176664A1 (en) * | 1972-03-23 | 1973-11-02 | Siemens Ag | |
| GB2464158A (en) * | 2008-10-10 | 2010-04-14 | Nexion Ltd | A method of fabricating structured particles composed of silicon or a silicon base material and their use in lithium rechargeable batteries |
| US8101298B2 (en) | 2006-01-23 | 2012-01-24 | Nexeon Ltd. | Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| US8384058B2 (en) | 2002-11-05 | 2013-02-26 | Nexeon Ltd. | Structured silicon anode |
| US8585918B2 (en) | 2006-01-23 | 2013-11-19 | Nexeon Ltd. | Method of etching a silicon-based material |
| US8642211B2 (en) | 2007-07-17 | 2014-02-04 | Nexeon Limited | Electrode including silicon-comprising fibres and electrochemical cells including the same |
| US8870975B2 (en) | 2007-07-17 | 2014-10-28 | Nexeon Ltd. | Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| US8932759B2 (en) | 2008-10-10 | 2015-01-13 | Nexeon Ltd. | Method of fabricating structured particles composed of silicon or a silicon-based material |
| US9012079B2 (en) | 2007-07-17 | 2015-04-21 | Nexeon Ltd | Electrode comprising structured silicon-based material |
| US9252426B2 (en) | 2007-05-11 | 2016-02-02 | Nexeon Limited | Silicon anode for a rechargeable battery |
| US9548489B2 (en) | 2012-01-30 | 2017-01-17 | Nexeon Ltd. | Composition of SI/C electro active material |
| US9553304B2 (en) | 2009-05-07 | 2017-01-24 | Nexeon Limited | Method of making silicon anode material for rechargeable cells |
| US9608272B2 (en) | 2009-05-11 | 2017-03-28 | Nexeon Limited | Composition for a secondary battery cell |
| US9647263B2 (en) | 2010-09-03 | 2017-05-09 | Nexeon Limited | Electroactive material |
| US9853292B2 (en) | 2009-05-11 | 2017-12-26 | Nexeon Limited | Electrode composition for a secondary battery cell |
| US9871248B2 (en) | 2010-09-03 | 2018-01-16 | Nexeon Limited | Porous electroactive material |
| US10008716B2 (en) | 2012-11-02 | 2018-06-26 | Nexeon Limited | Device and method of forming a device |
| US10077506B2 (en) | 2011-06-24 | 2018-09-18 | Nexeon Limited | Structured particles |
| US10090513B2 (en) | 2012-06-01 | 2018-10-02 | Nexeon Limited | Method of forming silicon |
| US10103379B2 (en) | 2012-02-28 | 2018-10-16 | Nexeon Limited | Structured silicon particles |
| US10396355B2 (en) | 2014-04-09 | 2019-08-27 | Nexeon Ltd. | Negative electrode active material for secondary battery and method for manufacturing same |
| US10476072B2 (en) | 2014-12-12 | 2019-11-12 | Nexeon Limited | Electrodes for metal-ion batteries |
| US10586976B2 (en) | 2014-04-22 | 2020-03-10 | Nexeon Ltd | Negative electrode active material and lithium secondary battery comprising same |
-
1961
- 1961-11-17 GB GB4126661A patent/GB980513A/en not_active Expired
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2022335A1 (en) * | 1968-10-31 | 1970-07-31 | Gen Electric | |
| FR2176664A1 (en) * | 1972-03-23 | 1973-11-02 | Siemens Ag | |
| US8384058B2 (en) | 2002-11-05 | 2013-02-26 | Nexeon Ltd. | Structured silicon anode |
| US8101298B2 (en) | 2006-01-23 | 2012-01-24 | Nexeon Ltd. | Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| US8585918B2 (en) | 2006-01-23 | 2013-11-19 | Nexeon Ltd. | Method of etching a silicon-based material |
| US9252426B2 (en) | 2007-05-11 | 2016-02-02 | Nexeon Limited | Silicon anode for a rechargeable battery |
| US9871249B2 (en) | 2007-05-11 | 2018-01-16 | Nexeon Limited | Silicon anode for a rechargeable battery |
| US8870975B2 (en) | 2007-07-17 | 2014-10-28 | Nexeon Ltd. | Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| US9871244B2 (en) | 2007-07-17 | 2018-01-16 | Nexeon Limited | Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| US8940437B2 (en) | 2007-07-17 | 2015-01-27 | Nexeon Limited | Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| US9012079B2 (en) | 2007-07-17 | 2015-04-21 | Nexeon Ltd | Electrode comprising structured silicon-based material |
| US8642211B2 (en) | 2007-07-17 | 2014-02-04 | Nexeon Limited | Electrode including silicon-comprising fibres and electrochemical cells including the same |
| US8932759B2 (en) | 2008-10-10 | 2015-01-13 | Nexeon Ltd. | Method of fabricating structured particles composed of silicon or a silicon-based material |
| US9184438B2 (en) | 2008-10-10 | 2015-11-10 | Nexeon Ltd. | Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| GB2464158B (en) * | 2008-10-10 | 2011-04-20 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| GB2464158A (en) * | 2008-10-10 | 2010-04-14 | Nexion Ltd | A method of fabricating structured particles composed of silicon or a silicon base material and their use in lithium rechargeable batteries |
| US9553304B2 (en) | 2009-05-07 | 2017-01-24 | Nexeon Limited | Method of making silicon anode material for rechargeable cells |
| US9608272B2 (en) | 2009-05-11 | 2017-03-28 | Nexeon Limited | Composition for a secondary battery cell |
| US10050275B2 (en) | 2009-05-11 | 2018-08-14 | Nexeon Limited | Binder for lithium ion rechargeable battery cells |
| US9853292B2 (en) | 2009-05-11 | 2017-12-26 | Nexeon Limited | Electrode composition for a secondary battery cell |
| US9647263B2 (en) | 2010-09-03 | 2017-05-09 | Nexeon Limited | Electroactive material |
| US9871248B2 (en) | 2010-09-03 | 2018-01-16 | Nexeon Limited | Porous electroactive material |
| US9947920B2 (en) | 2010-09-03 | 2018-04-17 | Nexeon Limited | Electroactive material |
| US10822713B2 (en) | 2011-06-24 | 2020-11-03 | Nexeon Limited | Structured particles |
| US10077506B2 (en) | 2011-06-24 | 2018-09-18 | Nexeon Limited | Structured particles |
| US10388948B2 (en) | 2012-01-30 | 2019-08-20 | Nexeon Limited | Composition of SI/C electro active material |
| US9548489B2 (en) | 2012-01-30 | 2017-01-17 | Nexeon Ltd. | Composition of SI/C electro active material |
| US10103379B2 (en) | 2012-02-28 | 2018-10-16 | Nexeon Limited | Structured silicon particles |
| US10090513B2 (en) | 2012-06-01 | 2018-10-02 | Nexeon Limited | Method of forming silicon |
| US10008716B2 (en) | 2012-11-02 | 2018-06-26 | Nexeon Limited | Device and method of forming a device |
| US10396355B2 (en) | 2014-04-09 | 2019-08-27 | Nexeon Ltd. | Negative electrode active material for secondary battery and method for manufacturing same |
| US10693134B2 (en) | 2014-04-09 | 2020-06-23 | Nexeon Ltd. | Negative electrode active material for secondary battery and method for manufacturing same |
| US10586976B2 (en) | 2014-04-22 | 2020-03-10 | Nexeon Ltd | Negative electrode active material and lithium secondary battery comprising same |
| US10476072B2 (en) | 2014-12-12 | 2019-11-12 | Nexeon Limited | Electrodes for metal-ion batteries |
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