GB1526425A - Method of etching aluminium oxide - Google Patents

Method of etching aluminium oxide

Info

Publication number
GB1526425A
GB1526425A GB42222/75A GB4222275A GB1526425A GB 1526425 A GB1526425 A GB 1526425A GB 42222/75 A GB42222/75 A GB 42222/75A GB 4222275 A GB4222275 A GB 4222275A GB 1526425 A GB1526425 A GB 1526425A
Authority
GB
United Kingdom
Prior art keywords
layer
mask
fluoride
etching
oct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42222/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7435151A external-priority patent/FR2288392A1/en
Priority claimed from FR7435152A external-priority patent/FR2288138A1/en
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1526425A publication Critical patent/GB1526425A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

1526425 Etching PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 15 Oct 1975 [18 Oct 1974 (2)] 42222/75 Heading B6J [Also in Division C7] A layer of aluminium oxide is wholly or partially removed in an etchant comprising a solution of a fluoride in an organic solvent, the solution being substantially free from hydrofluoric acid and unbound water. The solvent may be ethylene glycol, glycerol or glacial acetic acid and the fluoride may be ammonium fluoride. The oxide layer may be on an aluminium surface, the layer being wholly removed before connection of electrical contacts to the surface. Alternatively the layer may be selectively removed through a photoresist or silicon oxide mask, the latter mask being promoted by etching a silicon oxide layer with HF + NH 4 F through a photoresist mask.
GB42222/75A 1974-10-18 1975-10-15 Method of etching aluminium oxide Expired GB1526425A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7435151A FR2288392A1 (en) 1974-10-18 1974-10-18 PROCESS FOR THE EMBODIMENT OF SEMICONDUCTOR DEVICES
FR7435152A FR2288138A1 (en) 1974-10-18 1974-10-18 Removal of aluminium oxide layer by etching - using a solution of fluoride in an organic solvent

Publications (1)

Publication Number Publication Date
GB1526425A true GB1526425A (en) 1978-09-27

Family

ID=26218562

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42222/75A Expired GB1526425A (en) 1974-10-18 1975-10-15 Method of etching aluminium oxide

Country Status (4)

Country Link
JP (1) JPS5640492B2 (en)
BR (1) BR7506737A (en)
DE (1) DE2546316C2 (en)
GB (1) GB1526425A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048083C2 (en) * 1980-12-19 1983-09-29 Ludwig 8900 Augsburg Fahrmbacher-Lutz Process for the chemical removal of oxide layers from objects made of titanium or titanium alloys
JPS59184532A (en) * 1983-04-05 1984-10-19 Oki Electric Ind Co Ltd Manufacture of semiconductor device
AU2607599A (en) * 1998-03-10 1999-09-27 Scacco Electronics Consulting Selective etching of silicon nitride by means of a wet chemical process
WO2019151090A1 (en) * 2018-01-30 2019-08-08 東京エレクトロン株式会社 Substrate processing method, substrate processing device, and etchant

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2828193A (en) * 1954-08-09 1958-03-25 Turco Products Inc Method for rejuvenation of aluminum treating solutions
JPS5141161B2 (en) * 1972-08-25 1976-11-08

Also Published As

Publication number Publication date
JPS5169369A (en) 1976-06-15
JPS5640492B2 (en) 1981-09-21
DE2546316A1 (en) 1976-04-22
DE2546316C2 (en) 1982-11-11
BR7506737A (en) 1976-08-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee