JP2008530782A - シリコン含有膜の選択的堆積 - Google Patents

シリコン含有膜の選択的堆積 Download PDF

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JP2008530782A
JP2008530782A JP2007554163A JP2007554163A JP2008530782A JP 2008530782 A JP2008530782 A JP 2008530782A JP 2007554163 A JP2007554163 A JP 2007554163A JP 2007554163 A JP2007554163 A JP 2007554163A JP 2008530782 A JP2008530782 A JP 2008530782A
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gas
trisilane
dopant
deposition
source
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JP2008530782A5 (enExample
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マティーアス バウアー
チャンタル アリーナ
ロナルド バートラム
ピエール トマシニ
ナイルズ コディー
ポール ブラバント
ジョセフ イタリアーノ
ポール ジェイコブソン
キース ドラン ウィークス
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エーエスエム アメリカ インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
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  • Chemical & Material Sciences (AREA)
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  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007554163A 2005-02-04 2006-01-31 シリコン含有膜の選択的堆積 Pending JP2008530782A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US64999005P 2005-02-04 2005-02-04
US66343405P 2005-03-18 2005-03-18
US66842005P 2005-04-04 2005-04-04
PCT/US2006/003333 WO2006083821A1 (en) 2005-02-04 2006-01-31 Selective deposition of silicon-containing films

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JP2011265240A Division JP5295344B2 (ja) 2005-02-04 2011-12-02 シリコン含有膜の選択的堆積

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JP2008530782A true JP2008530782A (ja) 2008-08-07
JP2008530782A5 JP2008530782A5 (enExample) 2009-03-12

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JP2007554163A Pending JP2008530782A (ja) 2005-02-04 2006-01-31 シリコン含有膜の選択的堆積
JP2007554171A Active JP5571287B2 (ja) 2005-02-04 2006-01-31 化学気相成長によって置換的に炭素でドーピングされた結晶性Ｓｉ含有材料を製造する方法
JP2006025710A Active JP5173140B2 (ja) 2005-02-04 2006-02-02 電気的に活性なドープト結晶性Ｓｉ含有膜の堆積方法
JP2011265240A Active JP5295344B2 (ja) 2005-02-04 2011-12-02 シリコン含有膜の選択的堆積

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JP2007554171A Active JP5571287B2 (ja) 2005-02-04 2006-01-31 化学気相成長によって置換的に炭素でドーピングされた結晶性Ｓｉ含有材料を製造する方法
JP2006025710A Active JP5173140B2 (ja) 2005-02-04 2006-02-02 電気的に活性なドープト結晶性Ｓｉ含有膜の堆積方法
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