JP2009064996A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 279
- 238000004519 manufacturing process Methods 0.000 title description 42
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 83
- 238000002955 isolation Methods 0.000 claims abstract description 46
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 37
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000010410 layer Substances 0.000 description 133
- 238000000034 method Methods 0.000 description 70
- 239000007789 gas Substances 0.000 description 49
- 239000002019 doping agent Substances 0.000 description 45
- 229910052581 Si3N4 Inorganic materials 0.000 description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 29
- 238000005530 etching Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 238000005468 ion implantation Methods 0.000 description 21
- 238000000137 annealing Methods 0.000 description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 13
- 229910000077 silane Inorganic materials 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 230000004913 activation Effects 0.000 description 9
- 238000001459 lithography Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- 229910004143 HfON Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1027—Thyristors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
- H01L29/66393—Lateral or planar thyristors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】半導体基板11に形成された素子分離領域14によって分離された該半導体基板11の素子形成領域12と、前記半導体基板11上に形成された絶縁膜41と、前記素子形成領域12の選択エピタキシャル成長させる領域上を含むように前記絶縁膜41に形成された開口部42と、前記開口部42内の半導体基板11の素子形成領域12より選択エピタキシャル成長により形成された半導体層15とを有することを特徴とする。
【選択図】図1
Description
Claims (10)
- 半導体基板に形成された素子分離領域によって分離された該半導体基板の素子形成領域と、
前記半導体基板上に形成された絶縁膜と、
前記素子形成領域の選択エピタキシャル成長させる領域上を含むように前記絶縁膜に形成された開口部と、
前記開口部内の半導体基板の素子形成領域より選択エピタキシャル成長により形成された半導体層と
を有することを特徴とする半導体装置。 - 前記半導体装置は、第1伝導型の第1領域と、前記第1伝導型とは逆伝導の第2伝導型の第2領域と、第1伝導型の第3領域と、第2伝導型の第4領域とが順に接合されたもので、該第3領域にゲートが形成されたサイリスタを有する半導体装置であって、
前記第1領域は前記半導体層で形成されている
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体装置は、第1伝導型の第1領域と、前記第1伝導型とは逆伝導の第2伝導型の第2領域と、第1伝導型の第3領域と、第2伝導型の第4領域とが順に接合されたもので、該第3領域にゲートが形成されたサイリスタを有する半導体装置であって、
前記第2領域は前記半導体層で形成されている
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体装置は、第1伝導型の第1領域と、前記第1伝導型とは逆伝導の第2伝導型の第2領域と、第1伝導型の第3領域と、第2伝導型の第4領域とが順に接合されたもので、該第3領域にゲートが形成されたサイリスタを有する半導体装置であって、
前記第4領域は前記半導体層で形成されている
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体層は前記絶縁膜の開口部における厚さよりも厚く形成されている
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体層は前記絶縁膜上の一部にかぶさるように形成されている
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体層上に形成されたシリサイド層を有し、
前記シリサイド層は、前記絶縁膜によって前記半導体基板と分離されている
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体層上に選択エピタキシャル成長により形成された第2半導体層を有し、
前記第2半導体層は、前記絶縁膜によって前記半導体基板と分離されている
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体装置は、第1伝導型の第1領域と、前記第1伝導型とは逆伝導の第2伝導型の第2領域と、第1伝導型の第3領域と、第2伝導型の第4領域とが順に接合されたもので、該第3領域にゲートが形成されたサイリスタを有する半導体装置であって、
前記第1領域は前記第2半導体層で形成され、
前記第2領域は前記半導体層で形成されている
ことを特徴とする請求項8記載の半導体装置。 - 半導体基板に素子分離領域を形成して素子形成領域を分離する工程と、
前記半導体基板上に絶縁膜を形成する工程と、
前記絶縁膜における前記素子形成領域の選択エピタキシャル成長させる領域上を含むように開口部を形成する工程と、
前記開口部内の半導体基板の素子形成領域より選択エピタキシャル成長により半導体層を形成する工程と
を有することを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007232242A JP2009064996A (ja) | 2007-09-07 | 2007-09-07 | 半導体装置およびその製造方法 |
US12/205,224 US20090065802A1 (en) | 2007-09-07 | 2008-09-05 | Semiconductor device and manufacturing method of the same |
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Application Number | Priority Date | Filing Date | Title |
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JP2007232242A JP2009064996A (ja) | 2007-09-07 | 2007-09-07 | 半導体装置およびその製造方法 |
Publications (1)
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JP2009064996A true JP2009064996A (ja) | 2009-03-26 |
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JP2007232242A Pending JP2009064996A (ja) | 2007-09-07 | 2007-09-07 | 半導体装置およびその製造方法 |
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JP (1) | JP2009064996A (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006083821A1 (en) * | 2005-02-04 | 2006-08-10 | Asm America, Inc. | Selective deposition of silicon-containing films |
JP2007053127A (ja) * | 2005-08-15 | 2007-03-01 | Sony Corp | 半導体装置およびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0744275B2 (ja) * | 1988-10-06 | 1995-05-15 | 日本電気株式会社 | 高耐圧mos型半導体装置の製造方法 |
US5683924A (en) * | 1994-10-31 | 1997-11-04 | Sgs-Thomson Microelectronics, Inc. | Method of forming raised source/drain regions in a integrated circuit |
US6462359B1 (en) * | 2001-03-22 | 2002-10-08 | T-Ram, Inc. | Stability in thyristor-based memory device |
US6888176B1 (en) * | 2002-10-01 | 2005-05-03 | T-Ram, Inc. | Thyrister semiconductor device |
US8125003B2 (en) * | 2003-07-02 | 2012-02-28 | Micron Technology, Inc. | High-performance one-transistor memory cell |
US7651715B2 (en) * | 2004-05-03 | 2010-01-26 | Leprino Foods Company | Blended cheeses and methods for making such cheeses |
JP2007189193A (ja) * | 2005-12-15 | 2007-07-26 | Sony Corp | 半導体装置および半導体装置の製造方法 |
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- 2007-09-07 JP JP2007232242A patent/JP2009064996A/ja active Pending
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2008
- 2008-09-05 US US12/205,224 patent/US20090065802A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006083821A1 (en) * | 2005-02-04 | 2006-08-10 | Asm America, Inc. | Selective deposition of silicon-containing films |
JP2007053127A (ja) * | 2005-08-15 | 2007-03-01 | Sony Corp | 半導体装置およびその製造方法 |
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