FR2968830B1 - Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe - Google Patents

Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe

Info

Publication number
FR2968830B1
FR2968830B1 FR1060264A FR1060264A FR2968830B1 FR 2968830 B1 FR2968830 B1 FR 2968830B1 FR 1060264 A FR1060264 A FR 1060264A FR 1060264 A FR1060264 A FR 1060264A FR 2968830 B1 FR2968830 B1 FR 2968830B1
Authority
FR
France
Prior art keywords
semiconductor materials
nitride iii
matrix layers
improved matrix
iii semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1060264A
Other languages
English (en)
Other versions
FR2968830A1 (fr
Inventor
Chantal Arena
Jr Ronald Thomas Bertram
Ed Lindow
Subhash Mahajan
Ilsu Han
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arizona Board Of Regents For And On Behalf Of Us
Soitec SA
Original Assignee
Soitec SA
University of Arizona
Arizona State University ASU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA, University of Arizona, Arizona State University ASU filed Critical Soitec SA
Priority to FR1060264A priority Critical patent/FR2968830B1/fr
Priority to TW100134222A priority patent/TWI533355B/zh
Priority to CN201180056302.5A priority patent/CN103238203B/zh
Priority to KR1020137015220A priority patent/KR20130141592A/ko
Priority to JP2013540342A priority patent/JP5895279B2/ja
Priority to PCT/EP2011/070772 priority patent/WO2012069521A1/fr
Priority to DE112011103882T priority patent/DE112011103882T5/de
Priority to US13/989,004 priority patent/US9076666B2/en
Publication of FR2968830A1 publication Critical patent/FR2968830A1/fr
Application granted granted Critical
Publication of FR2968830B1 publication Critical patent/FR2968830B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1060264A 2010-11-23 2010-12-08 Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe Expired - Fee Related FR2968830B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1060264A FR2968830B1 (fr) 2010-12-08 2010-12-08 Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
TW100134222A TWI533355B (zh) 2010-11-23 2011-09-22 用於使用鹵化物汽相磊晶處理之三族氮化物半導體材料之異質磊晶沈積之改善模板層
KR1020137015220A KR20130141592A (ko) 2010-11-23 2011-11-23 Hvpe 프로세스들을 이용하여 iii-질화물 반도체 물질의 헤테로에피택셜 증착을 위한 개선된 템플레이트층들
JP2013540342A JP5895279B2 (ja) 2010-11-23 2011-11-23 Ｈｖｐｅプロセスを用いたｉｉｉ族窒化物半導体材料のヘテロエピタキシャル堆積のための改善されたテンプレート層
CN201180056302.5A CN103238203B (zh) 2010-11-23 2011-11-23 用于利用hvpe工艺异质外延沉积iii族氮化物半导体材料的改进的模板层
PCT/EP2011/070772 WO2012069521A1 (fr) 2010-11-23 2011-11-23 Couches de matrice hvpe améliorées pour le dépôt par hétéroépitaxie de matériaux semi-conducteurs à base de nitrure du groupe iii par des procédés hvpe
DE112011103882T DE112011103882T5 (de) 2010-11-23 2011-11-23 Verbesserte Vorlagenschichten für die heteroepitaxiale Abscheidung von III-Nitridhalbleitermaterialien unter Verwendung von HVPE-Vorgängen
US13/989,004 US9076666B2 (en) 2010-11-23 2011-11-23 Template layers for heteroepitaxial deposition of III-nitride semiconductor materials using HVPE processes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1060264A FR2968830B1 (fr) 2010-12-08 2010-12-08 Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe

Publications (2)

Publication Number Publication Date
FR2968830A1 FR2968830A1 (fr) 2012-06-15
FR2968830B1 true FR2968830B1 (fr) 2014-03-21

Family

ID=44071006

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1060264A Expired - Fee Related FR2968830B1 (fr) 2010-11-23 2010-12-08 Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe

Country Status (8)

Country Link
US (1) US9076666B2 (fr)
JP (1) JP5895279B2 (fr)
KR (1) KR20130141592A (fr)
CN (1) CN103238203B (fr)
DE (1) DE112011103882T5 (fr)
FR (1) FR2968830B1 (fr)
TW (1) TWI533355B (fr)
WO (1) WO2012069521A1 (fr)

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CN105518838B (zh) * 2013-07-02 2019-11-26 雅达公司 使用快速热加工形成异质外延层以除去晶格位错
CN105579613B (zh) * 2013-09-23 2018-06-05 雅达公司 在硅衬底上形成器件质量的氮化镓层的方法和装置
CN107227490B (zh) * 2016-03-23 2021-06-18 松下知识产权经营株式会社 Iii族氮化物半导体及其制造方法
JP7157953B2 (ja) * 2017-12-21 2022-10-21 パナソニックＩｐマネジメント株式会社 窒化物系薄膜複合構造体及びその製造方法
WO2019123954A1 (fr) * 2017-12-21 2019-06-27 パナソニックＩｐマネジメント株式会社 Structure de film composite à base de nitrure et procédé pour sa fabrication
US11466384B2 (en) * 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
EP4104201A1 (fr) 2020-02-11 2022-12-21 SLT Technologies, Inc. Substrat de nitrure du groupe iii amélioré, son procédé de fabrication et procédé d'utilisation
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
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FR2968830A1 (fr) 2012-06-15
WO2012069521A1 (fr) 2012-05-31
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