PL394857A1 - Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę - Google Patents

Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę

Info

Publication number
PL394857A1
PL394857A1 PL394857A PL39485709A PL394857A1 PL 394857 A1 PL394857 A1 PL 394857A1 PL 394857 A PL394857 A PL 394857A PL 39485709 A PL39485709 A PL 39485709A PL 394857 A1 PL394857 A1 PL 394857A1
Authority
PL
Poland
Prior art keywords
ammonothermal
production
large scale
gallium nitride
crystals
Prior art date
Application number
PL394857A
Other languages
English (en)
Inventor
Mark P. D'evelyn
Original Assignee
Sorra, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sorra, Inc. filed Critical Sorra, Inc.
Publication of PL394857A1 publication Critical patent/PL394857A1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL394857A 2008-08-07 2009-08-04 Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę PL394857A1 (pl)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8713508P 2008-08-07 2008-08-07
US8712208P 2008-08-07 2008-08-07
US8680108P 2008-08-07 2008-08-07
US8680008P 2008-08-07 2008-08-07
US8679908P 2008-08-07 2008-08-07

Publications (1)

Publication Number Publication Date
PL394857A1 true PL394857A1 (pl) 2011-09-26

Family

ID=41663958

Family Applications (1)

Application Number Title Priority Date Filing Date
PL394857A PL394857A1 (pl) 2008-08-07 2009-08-04 Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę

Country Status (4)

Country Link
JP (1) JP2011530471A (pl)
CN (1) CN102144052A (pl)
PL (1) PL394857A1 (pl)
WO (1) WO2010017232A1 (pl)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
US20150337457A1 (en) 2006-04-07 2015-11-26 Sixpoint Materials, Inc. Group iii nitride bulk crystals and their fabrication method
US9834863B2 (en) 2006-04-07 2017-12-05 Sixpoint Materials, Inc. Group III nitride bulk crystals and fabrication method
JP2012017212A (ja) * 2010-07-06 2012-01-26 Tohoku Univ 窒化物単結晶の製造方法、窒化物単結晶、基板およびデバイス
JP5953684B2 (ja) 2011-09-14 2016-07-20 株式会社リコー １３族窒化物結晶の製造方法
JP2013071889A (ja) * 2011-09-28 2013-04-22 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物結晶の製造方法とそれに用いるシード
CN104781057B (zh) 2012-08-28 2018-04-24 希波特公司 第iii族氮化物晶片和其制造方法
JP6169704B2 (ja) * 2012-09-25 2017-07-26 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物結晶を成長させる方法
JP6140291B2 (ja) 2012-09-26 2017-05-31 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウエハおよび製作方法および試験方法
PL229568B1 (pl) * 2013-05-30 2018-07-31 Ammono Spolka Akcyjna Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem
CN103540994A (zh) * 2013-11-12 2014-01-29 青岛大学 一种kdp类晶体锥面定向生长装置
WO2015109211A1 (en) * 2014-01-17 2015-07-23 Sixpoint Materials, Inc. Group iii nitride bulk crystals and fabrication method
EP3146093A1 (en) * 2014-05-23 2017-03-29 Sixpoint Materials, Inc. Group iii nitride bulk crystals and their fabrication method
CN104645888A (zh) * 2015-02-25 2015-05-27 王建伟 一种工业化大批量稳定制备量子点的并联装置
US10822718B2 (en) * 2016-03-23 2020-11-03 Tokuyama Corporation Method for producing aluminum nitride single crystal substrate
CN107522174B (zh) * 2017-08-09 2020-02-14 江苏理工学院 一种制备三元钼系氮化物纳米材料的方法
CN110195258A (zh) * 2019-07-10 2019-09-03 上海玺唐半导体科技有限公司 氮化镓晶体生长装置及其生长方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030966A (en) * 1975-06-27 1977-06-21 Western Electric Company, Inc. Method of hydrothermally growing quartz
US6090202A (en) * 1998-04-29 2000-07-18 Sawyer Research Products, Inc. Method and apparatus for growing crystals
TWI231321B (en) * 2001-10-26 2005-04-21 Ammono Sp Zoo Substrate for epitaxy
US7786503B2 (en) * 2002-12-27 2010-08-31 Momentive Performance Materials Inc. Gallium nitride crystals and wafers and method of making
EP3211659A1 (en) * 2002-12-27 2017-08-30 Soraa Inc. Gallium nitride crystal
JP5014804B2 (ja) * 2004-06-11 2012-08-29 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン バルク単結晶ガリウム含有窒化物およびその用途
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
EP2041794A4 (en) * 2006-06-21 2010-07-21 Univ California OPTOELECTRONIC AND ELECTRONIC COMPONENTS USING AN N-FACE OR M-PLANE GaN SUBSTRATE FROM AMMONOTHERMAL BREEDING
JP2008174439A (ja) * 2006-12-21 2008-07-31 Mitsubishi Chemicals Corp 窒素元素とガリウム元素を含む粉末の製造方法、およびそれを利用した窒化ガリウム単結晶の製造方法

Also Published As

Publication number Publication date
CN102144052A (zh) 2011-08-03
WO2010017232A1 (en) 2010-02-11
JP2011530471A (ja) 2011-12-22

Similar Documents

Publication Publication Date Title
PL394857A1 (pl) Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę
TWI560176B (en) Batch system for the production of olefins
EP2408725A4 (en) PROCESS FOR THE PRODUCTION OF OLEFINES
GB2447761B (en) Process for making crystals
IL219094A0 (en) Process for the preparation of compounds useful as inhibitors of sglt2
PT2913337T (pt) Processo para a produção de sofosbuvir
EP2141267A4 (en) METHOD FOR MANUFACTURING GROUP III ELEMENT NITRIDE CRYSTAL
GB2461028B (en) Process for Making Crystals
ZA201103390B (en) Process for the manufacture of p4o6 with high yield
ZA201202343B (en) Process for the preparation of lenalidomide
FR2952931B1 (fr) Alumine-alpha pour la production de saphir monocristallin
IL214437A0 (en) Process for the synthesis of cleistanthin
IL243809A (en) Process for the production of γ-ketosulfide compounds and γ-ketosulfide compounds obtained
IL207431A0 (en) New process for the preparation of cyclohexanecarboxylic acid derivatives
IL206365A0 (en) Methods for improving the yield of cucumber plants
IT1398729B1 (it) Processo per la preparazione di testosterone
PT2245018T (pt) Processo para preparar bosentano
IL200126A (en) A new process for obtaining crystalline form v of agomalatine
PL2154271T3 (pl) Urządzenie do hodowania kryształów objętościowych azotku iii
IL215022A0 (en) Novel process for the preparation of enaminocarbonyl compounds
IL217460A0 (en) Novel process for the preparation of 4-aminobut-2-enolides
GB0905895D0 (en) Process for the preparation of chalcogenone compounds
PL384333A1 (pl) Sposób sporządzania próbek przeznaczonych do badań mechanicznych monokwazikryształów techniką jednoosiowego rozciągania
PL390002A1 (pl) Sposób wytwarzania monokryształów związków półprzewodnikowych
PL389762A1 (pl) Sposób wytwarzania bromfenwinfosu o wysokiej czystości

Legal Events

Date Code Title Description
REFS Decisions on refusal to grant patents (taken after the publication of the particulars of the applications)