JP5295344B2 - シリコン含有膜の選択的堆積 - Google Patents
シリコン含有膜の選択的堆積 Download PDFInfo
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- JP5295344B2 JP5295344B2 JP2011265240A JP2011265240A JP5295344B2 JP 5295344 B2 JP5295344 B2 JP 5295344B2 JP 2011265240 A JP2011265240 A JP 2011265240A JP 2011265240 A JP2011265240 A JP 2011265240A JP 5295344 B2 JP5295344 B2 JP 5295344B2
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- deposition
- trisilane
- silicon
- carbon
- film
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- 230000008021 deposition Effects 0.000 title claims abstract description 212
- 229910052710 silicon Inorganic materials 0.000 title claims description 118
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 115
- 239000010703 silicon Substances 0.000 title claims description 113
- 238000000151 deposition Methods 0.000 claims abstract description 255
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims abstract description 178
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 137
- 239000002019 doping agent Substances 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 103
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 99
- 238000000034 method Methods 0.000 claims abstract description 69
- 239000000460 chlorine Substances 0.000 claims description 113
- 229910052801 chlorine Inorganic materials 0.000 claims description 87
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 86
- 239000007789 gas Substances 0.000 claims description 79
- 239000012159 carrier gas Substances 0.000 claims description 67
- 239000004065 semiconductor Substances 0.000 claims description 44
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 41
- 229910052739 hydrogen Inorganic materials 0.000 claims description 39
- 150000001721 carbon Chemical class 0.000 claims description 38
- 239000001257 hydrogen Substances 0.000 claims description 38
- 150000004678 hydrides Chemical class 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 239000002243 precursor Substances 0.000 abstract description 47
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 32
- 238000010348 incorporation Methods 0.000 abstract description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 11
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 42
- 230000006870 function Effects 0.000 description 39
- 239000000463 material Substances 0.000 description 35
- 239000013078 crystal Substances 0.000 description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 27
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 26
- 229910052732 germanium Inorganic materials 0.000 description 26
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 26
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 24
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 21
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 19
- 229910003465 moissanite Inorganic materials 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000012545 processing Methods 0.000 description 16
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 15
- 230000000694 effects Effects 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 229910052734 helium Inorganic materials 0.000 description 14
- 229910052785 arsenic Inorganic materials 0.000 description 13
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 13
- 230000008901 benefit Effects 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 239000001307 helium Substances 0.000 description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 11
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 11
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 11
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 11
- 241001106476 Violaceae Species 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 9
- 229910003811 SiGeC Inorganic materials 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 239000000376 reactant Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000007792 addition Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- -1 copper or aluminum Chemical class 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910000078 germane Inorganic materials 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 0 CCCC(CC(C1)CC1C(C1)CC1C(CC)CC(*)C(C)*(C)(*)C(C(CC)*C)S)C(C1)CC1C(CC1)CC1C(CC1)CC1C1CCCC1 Chemical compound CCCC(CC(C1)CC1C(C1)CC1C(CC)CC(*)C(C)*(C)(*)C(C(CC)*C)S)C(C1)CC1C(CC1)CC1C(CC1)CC1C1CCCC1 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 241000894007 species Species 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 241000233805 Phoenix Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000007833 carbon precursor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- HVXTXDKAKJVHLF-UHFFFAOYSA-N silylmethylsilane Chemical compound [SiH3]C[SiH3] HVXTXDKAKJVHLF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000012217 deletion Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- DLNFKXNUGNBIOM-UHFFFAOYSA-N methyl(silylmethyl)silane Chemical compound C[SiH2]C[SiH3] DLNFKXNUGNBIOM-UHFFFAOYSA-N 0.000 description 1
- 239000005048 methyldichlorosilane Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- SMOJNZMNQIIIPK-UHFFFAOYSA-N silylphosphane Chemical compound P[SiH3] SMOJNZMNQIIIPK-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
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Description
本願は、2005年2月4日出願の米国特許仮出願第60/649,990号、2005年3月18日出願の米国特許仮出願第60/663,434号、および2005年4月4日出願の米国特許仮出願第60/668,420号に対する優先権を主張するものである。
発明の分野
本願は、一般的に半導体処理におけるシリコン含有材料の堆積に関する。より詳細には、本願は、トリシランを使用するシリコン含有膜の選択的堆積に関する。
半導体製造業において、表面に材料を堆積させるために様々な方法が用いられている。例えば、最も広範囲に使用されている方法の1つは化学気相成長(「CVD」)であり、ここでは蒸気に含まれる原子または分子が表面に堆積し蓄積されて膜を形成する。通常のシリコンソースおよび堆積方法を使用するシリコン含有(「Si含有」)材料の堆積は、幾つかの明確な段階において進行すると考えられる、Peter Van Zant著、「マイクロチップ加工(Microchip Fabrication)」第4版、McGraw Hill、New York、(2000年)、pp.364〜365を参照されたい。第1段階の核生成は非常に重要であり、これは基板表面の性質および品質によって大きく影響を受ける。核生成は、最初の僅かな原子または分子が表面上に堆積して核を形成したときに起こる。第2段階において、分離した核が小さなアイランドを形成し、これはより大きなアイランドへと成長する。第3段階において、成長したアイランドは、連続膜へと合体を始める。この時点で、膜は典型的に数百オングストロームの厚さを有し、「遷移(transition)」膜として知られている。これは一般的に、遷移膜が形成された後に成長を始めるより厚いバルク膜とは異なる化学的および物理的性質を有している。
現在、より迅速で、堆積層のより高い品質をもたらす堆積方法が見出されている。幾つかの説明された方法は、シリコンソースとしてトリシラン(H3SiSiH2SiH3)を使用し、Si含有膜の堆積方法に対する選択性を提供するための塩素のソースとして、塩素ガス(Cl2)などのハロゲン含有エッチャントガスを使用する。有利には、この方法は、ひずみを堆積層または隣接構造体に取り込むための炭素またはゲルマニウムソース、および/またはドーパントソースを含む追加のプロセスガスと良好に働く。例えば、選択的に堆積した結晶性シリコンは、結晶シリコンの堆積を塩素、トリシラン(シリコンソースとして)、および添加プロセスガス(炭素ソース、ゲルマニウムソースおよび/または電気的に活性なドーパント前駆物質)を使用して行なうことによりドープし、相対的に高い水準の他の元素(炭素、ゲルマニウムならびに砒素およびリンなどの様々な電気的に活性なドーパント)を含むこともできる。電気的に活性なドーパント前駆物質は、所望の導電性をin situで提供し、その後のドーピング段階を取り除くことが見出されただけでなく、堆積層の表面品質を独立に改良することも見出された。トリシラン/塩素堆積手段と併せた非水素キャリアガスの使用に関して、特別の利点が見出された。
第1表面形態を有する第1表面と第1表面形態とは異なる第2表面形態を有する第2表面とを含む基板を供給すること、
トリシランと塩素ガスを混合することによって供給ガスを形成すること、
この供給ガスを、化学気相成長条件下で、基板に導入すること、
この導入によって、Si含有層を、第2表面に堆積させることなく第1表面に選択的に堆積させること
を含む、基板上のシリコン含有層の選択的堆積方法を提供する。
基板をパターン化して露出した半導体表面と絶縁領域を画定すること、および
トリシランと塩素ガスを供給することによってSi含有エピタキシャル膜を、露出した半導体表面上に選択的に堆積させること
を含む、集積回路を形成する方法を提供する。
チャンバ内で堆積される基板を供給すること、
トリシラン、ハロゲン含有エッチャントガスおよび非水素キャリアガスを混合して供給ガスを形成すること、および
この供給ガスを基板に導入することによってシリコン含有層を基板上に堆積させること
を含む、シリコン含有層を基板上に堆積させる方法を提供する。
トリシラン蒸気ソース、
塩素ガスソース、
キャリアガスソース、
トリシラン、塩素およびキャリアガスのソースを化学気相成長チャンバに接続するガス分布ネットワーク、および
シリコン含有層を、基板の他の部分に堆積させることなく、チャンバ内の基板部分に選択的に堆積させるのに適した条件下で、トリシランおよび塩素をガス分布ネットワークに送るように構成された制御システム
を含む、半導体膜を堆積させるための装置を提供する。
本明細書で使用される用語「シリコン含有材料(Si−containing material)」および類似の用語は、これらに限定されるものではないが、Si(結晶シリコンを含む)、SiC(例えば、炭素ドープ結晶Si)、SiGeおよびSiGeC(例えば、炭素ドープ結晶SiGe)を含む幅広い種類のシリコン含有材料を指す。本明細書で使用される場合、「炭素ドープSi」、「SiC」、「Si:C」、「SiGe」、「炭素ドープSiGe」、「SiGeC」および類似の用語は、様々な割合の表示された化学元素および、場合によっては少量の他の元素を含む材料を指す。例えば、「SiGe」は、シリコン、ゲルマニウムおよび場合によっては、例えば、炭素のようなドーパントおよび電気的に活性なドーパントなどの他の元素を含む材料である。それ故炭素ドープSiは、SiCと称することもでき、その逆も同じである。「SiC」、「SiGe」および「SiGeC」などの用語は、それ自体化学量論的化学式ではなく、それ故表示された元素を特定の割合で含有する材料に限定されるものではない。Si含有膜中の、(炭素、ゲルマニウムまたは電気的に活性なドーパントなどの)ドーパントの百分率は、本明細書において、特に指定のない限り、全膜に対する原子百分率で表示される。
典型的な集積方法
図1は、図解した実施形態においてシリコンウエハを含む混合基板10を示す。上で述べたように、混合基板10は、ウエハまたはSOI基板上に形成されたエピタキシャル層を含むことができる。フィールドアイソレーション領域12は、通常のシャロートレンチアイソレーション(shallow trench isolation(STI))法によって形成され、STI素子のうちのウィンドウ中の単結晶アクティブ領域14を画定する。別の方法として、シリコンの局所酸化(LOCOS)および多くのLOCOSおよびSTIのバリエーションを含む、任意の適切な方法を使用して、フィールド絶縁材料を画定することができる。幾つかのアクティブ領域は、一般的に基板10を横断するSTIによって同時に画定され、STIはしばしばお互いからウェブ分離トランジスタアクティブ領域14を形成することが理解される。基板は、チャンネル形成に適切なレベルにおいてバックグラウンドドープすることが好ましい。
トリシラン/塩素選択的堆積
ある実施形態は、シリコン含有層を基板上に選択的に堆積させる方法を提供する。この方法は、チャンバ内に配置される基板を供給し;ここにおいてこの基板は、第1表面形態を有する第1表面と、第1表面形態とは異なる第2表面形態を有する第2表面を含んでいることが好ましい。この方法は、トリシラン、塩素ガスおよび、必要に応じて、1つまたは複数のキャリアガスおよびドーパントガスを混合し、これによって供給ガスを形成し;この供給ガスを化学気相成長条件下で基板に導き;トリシランおよび塩素の導入によってまたは導入中に、Si含有膜を、第2表面への堆積を最小化しながら、第1表面上に選択的に堆積させることを含んでいることが好ましい。
ドープSi含有膜
有利なことに、トリシランからの堆積は、選択的であってもなくても、炭素の極めて高水準も達成できる。高水準のシリコンへの置換炭素の取込みは、選択的であってもなくても、トリシランおよび炭素ソース(および幾つかの実施形態において、電気的に活性なドーパントのための必要に応じたドーパント前駆物質)を使用して、相対的に高い成長速度における堆積を行うことによって得ることもできる。図17A〜Dは、トリシラン、炭素ソース(図解した実施形態ではMMS)およびIII/V族ドーパントソース(図解した実施形態ではアルシン)を用いて堆積した、電気的にドープしたSiC膜の性質に対する温度および成長速度の影響を示す。図17A〜Dは、非選択的方法における炭素取込みを示すが、塩素追加による選択的方法、特にドーパント水素化物の組合せにおいても、類似の結果を得ることもできる。図17Aは、膜成長速度への温度の影響を示すアレニウスプロットである。図17Bは、置換炭素含有量への堆積温度の影響を示す別のアレニウスプロットで、置換炭素のより高い水準は、一般的により高い堆積温度において得られることを示している。好ましい堆積条件下で、置換炭素取込み水準は、約1.0原子%〜約3.5原子%の範囲とすることができる。図17Cは、成長速度の置換炭素含有量および抵抗率への影響を示すプロット(堆積温度の関数、図17A参照)であり、より高い置換炭素水準およびより高い抵抗率は、一般的により高い成長速度において得られることを示している。図17Dは、温度の抵抗率への影響を示す別のアレニウスプロットで、より高い抵抗率の水準は、一般的により高い堆積温度において得られることを示している。
塩素のドーパント水素化物ゲッタリング
in situドーピングは、特に枚葉式処理において、CVDチャンバの望ましくない汚染のためにしばしば回避される。p型(例えばホウ素ドープ)およびn型(例えばリンドープまたは砒素ドープ)の両方の用途に有用な真性半導体の堆積によって、経済性を達成することができる。層は、別個のプロセスツールにおいて、埋込みまたは拡散によって簡単にドープされる。さらにドーパント拡散にバッチ処理を使用することができるので、処理能力は追加のドーピングステップによって大きく影響されない。
非水素キャリアガス
本発明の別の態様により、非水素キャリアガスは、ハロゲン含有エッチャントガスおよびトリシランガスと組み合わせて使用するのが好ましい。ハロゲン含有エッチャントガスは、塩化水素(HCl)、ヘキサクロロジシラン(Si2Cl6)および/または塩素などの塩素含有エッチャントガスでよい。水素ガス(H2)は、半導体処理のための蒸気堆積、特にエピタキシャル堆積において使用される、最も一般的なキャリアガスである。H2が最も一般的であるのには幾つかの理由がある。H2は高純度で供給することができる。さらに、水素の熱的性質は、ウエハに他の不活性ガスが影響するよりもより大きな熱的効果がある。加えて、水素は還元剤として働く傾向があるので、反応チャンバの完全とは言えない密封の結果生ずる自然酸化膜の形成に対抗する。
(1)Si(s)+Cl2(g)→SiCl2(g) エッチング
(2)Si3H8(g)→H3SiSiH:(g)+SiH4(g) トリシラン解離
(3)H3SiSiH:(g)→H2Si=SiH2(g)
(4)SiH2(g)+SiCl2(s)→2Si(s)+2HCl(g) 堆積
(5)Si(s)+2HCl⇔SiCl2(g)+H2(g) 堆積とエッチングの平衡
(6)2PH3(g)→2P(s)+3H2(g) ドーピング
(7)PH3(g)+6Cl(s)→PC13(g)+3HCl(g) フリー表面部位
(8)C12(g)+H2(g)→2HC1(g)
比較:SiH2Cl2(g)→SiCl2(g)+H2(g) DCS分解
式(1)は、システムにおけるエッチング反応を表す。式(1)は、(選択性を維持するために必要な)エッチングを提供することに加えて、またシリコン堆積を生成する傾向のある式(5)の反応物質を生成する。式(5)は、右側への反応(エッチング)と左側への反応(堆積)の間のバランスを表す。絶縁表面上ではエッチングが優位であり、一方半導体ウィンドウ上では堆積が優位であるような条件が好ましい。理論によって制限されることを望まないが、十分な濃度の塩素ガスを供給して選択性のためのエッチングを生成し、一方では堆積を提供するためのSiCl2を生成することが望ましい。
Claims (11)
- シリコン含有層を混合基板上に選択的に堆積させる方法であって、前記方法は、
チャンバ内で堆積される混合基板を供給することであって、前記混合基板が半導体表面と誘電体表面を有すること、
トリシラン、ハロゲン含有エッチャントガスおよび非水素キャリアガスを混合して供給ガスを形成すること、および
前記供給ガスを前記基板に導入することによって前記半導体表面上にシリコン含有層を選択的に堆積させること
を含む方法。 - 前記ハロゲン含有エッチャントガスが塩素である、請求項1に記載の方法。
- 前記半導体表面が半導体ウィンドウを含み、前記誘電体表面が前記半導体ウィンドウを囲むようなフィールド絶縁領域を含み、導入することが、前記フィールド絶縁領域への堆積を含まずに、半導体ウィンドウの中で選択的に堆積することを含む、請求項1に記載の方法。
- 前記Si含有層を、前記半導体表面上に5nm/分超の堆積速度で堆積させる、請求項1に記載の方法。
- 前記Si含有層を、前記基板上に650℃以下で堆積させる、請求項4に記載の方法。
- 前記Si含有層を、前記基板上に400℃〜600℃の範囲で堆積させる、請求項4に記載の方法。
- 前記Si含有層を、前記半導体表面上に10nm/分超の堆積速度で堆積させる、請求項4に記載の方法。
- 非水素キャリアガスを用いた炭素ソースを導入することをさらに含み、前記シリコン含有層がX線回折によって決定して、少なくとも2.4原子%の置換炭素を含む、請求項1に記載の方法。
- 電気的ドーパント水素化物を、非水素キャリアガスを用いて導入することをさらに含む、請求項1に記載の方法。
- 前記Si含有層を、前記基板上に750℃以下で堆積させる、請求項7に記載の方法。
- 前記Si含有層を、前記基板上に400℃〜600℃の範囲で堆積させる、請求項1に記載の方法。
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TW200633021A (en) | 2006-09-16 |
US7438760B2 (en) | 2008-10-21 |
JP2006216955A (ja) | 2006-08-17 |
US7816236B2 (en) | 2010-10-19 |
JP2012054613A (ja) | 2012-03-15 |
TWI385714B (zh) | 2013-02-11 |
KR20070100401A (ko) | 2007-10-10 |
JP2008530782A (ja) | 2008-08-07 |
US7687383B2 (en) | 2010-03-30 |
TWI466174B (zh) | 2014-12-21 |
US7648690B2 (en) | 2010-01-19 |
EP1846596A2 (en) | 2007-10-24 |
TW200710950A (en) | 2007-03-16 |
US20060240630A1 (en) | 2006-10-26 |
JP5571287B2 (ja) | 2014-08-13 |
US20060234504A1 (en) | 2006-10-19 |
KR20080016988A (ko) | 2008-02-25 |
EP1846595A1 (en) | 2007-10-24 |
WO2006083909A3 (en) | 2006-10-19 |
JP2008530784A (ja) | 2008-08-07 |
US9190515B2 (en) | 2015-11-17 |
US20060205194A1 (en) | 2006-09-14 |
US20100140744A1 (en) | 2010-06-10 |
WO2006083821A1 (en) | 2006-08-10 |
US20090026496A1 (en) | 2009-01-29 |
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JP5173140B2 (ja) | 2013-03-27 |
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