JP2005328021A - ガスディフューザのホールデザインによるプラズマ均一性制御 - Google Patents
ガスディフューザのホールデザインによるプラズマ均一性制御 Download PDFInfo
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Abstract
【解決手段】上流側及び下流側を有し、該ディフューザプレート258の上流側と下流側との間の複数のガス流路262を含み、該ディフューザプレート258の中心部から縁部に向かって徐々に増加する径、深さ及び表面積を有するディフューザプレート258。
【選択図】図2
Description
[0001]本発明の実施形態は、一般に、ガス分散プレートアセンブリ及び処理チャンバ内にガスを分散させる方法に関する。
[0002]液晶ディスプレイあるいはフラットパネルは、一般に、コンピュータやテレビジョンモニタ等のアクティブマトリックスディスプレイに用いられている。プラズマCVD(plasma enhanced chemical vapor deposition;PECVD)は、一般に、フラットパネルディスプレイまたは半導体ウェーハのための透明基板等の基板上に薄膜を堆積させるのに用いられる。PECVDは、通常、前駆物質ガスまたはガス混合物を、基板を含む真空チャンバ内に導入することによって実現される。該前駆物質ガスまたはガス混合物は、一般に、該チャンバの上部近傍に配置された分散プレートを通して下方に向けられる。該チャンバ内の該前駆物質ガスまたはガス混合物は、該チャンバに結合された1つまたはそれ以上の高周波電源から該チャンバに高周波(radio frequency;RF)電力を印加することにより、エネルギーを与えられて(例えば、励起されて)プラズマにされる。該励起されたガスまたはガス混合物は、反応して、温度制御された基板支持体上に配置されている基板の表面に材料層を形成する。該反応中に生成された揮発性副生成物は、該チャンバから排気装置を介して排出される。
Claims (151)
- 上流側と下流側とを有するディフューザプレート要素と、
前記ディフューザプレート要素の上流側と下流側の間を通り、かつ前記下流側に中空カソードキャビティを備える内側及び外側ガス流路であって、前記内側ガス流路の中空カソードキャビティ密度が、前記外側ガス流路の中空カソードキャビティの容積密度よりも小さい、内側及び外側ガス流路とを備える、プラズマ処理チャンバのためのガス分散プレートアセンブリ。 - 前記中空カソードキャビティが、円錐体または円筒形状であり、前記中空カソードキャビティ容積密度を、前記中空カソードキャビティの径または長さあるいはそれらの両方を増加させることによって増加させることができる、請求項1に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチである、請求項2に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約0.5インチである、請求項2に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項2に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の深さが、約0.1〜約1.0インチである、請求項2に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項2に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が、約20°〜約40°である、請求項2に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項2に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が一定である、請求項9に記載のガス分散プレートアセンブリ。
- 隣接するガス流路の前記中空カソードキャビティの下流端部間の間隔が、多くて約0.6インチである、請求項1に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項1に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素が長方形である、請求項1に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項13に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径または長さあるいはそれらの両方が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加する、請求項2に記載のガス分散プレートアセンブリ。
- 上流側と下流側とを有するディフューザプレート要素と、
前記ディフューザプレート要素の上流側と下流側の間を通り、かつ前記下流側に中空カソードキャビティを備える内側及び外側ガス流路であって、前記内側ガス流路の中空カソードキャビティの表面積密度が、前記外側ガス流路の中空カソードキャビティの表面積よりも小さい、内側及び外側ガス流路とを備える、プラズマ処理チャンバのためのガス分散プレートアセンブリ。 - 前記中空カソードキャビティが、円錐体または円筒形状であり、前記中空カソードキャビティの表面積密度を、前記中空カソードキャビティの径または長さあるいはそれらの両方を増加させることによって増加させることができる、請求項16に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチである、請求項17に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約0.5インチである、請求項17に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項17に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の深さが、約0.1〜約1.0インチである、請求項17に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項17に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が、約20°〜約40°である、請求項17に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項17に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が一定である、請求項24に記載のガス分散プレートアセンブリ。
- 隣接するガス流路の前記中空カソードキャビティの下流端部間の間隔が、多くて約0.6インチである、請求項16に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項16に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素が長方形である、請求項16に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項28に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径または長さあるいはそれらの両方が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加する、請求項16に記載のガス分散プレートアセンブリ。
- 上流側と下流側とを有するディフューザプレート要素と、
前記ディフューザプレート要素の上流側と下流側の間を通る複数のガス流路であって、各ガス流路が、前記ディフューザプレート要素の下流側と交わるディフューザ穴を有し、前記ディフューザ穴の密度が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加する、プラズマ処理チャンバのためのガス分散プレートアセンブリ。 - 前記ディフューザ穴の密度が、約10%〜約100%である、請求項31に記載のガス分散プレートアセンブリ。
- 前記ディフューザ穴の密度が、約30%〜約100%である、請求項31に記載のガス分散プレートアセンブリ。
- 前記ディフューザ穴が、円錐体または円筒形状である、請求項31に記載のガス分散プレートアセンブリ。
- 前記ガス流路が、実質的に同一である、請求項31に記載のガス分散プレートアセンブリ。
- 前記下流端部における円錐体または円筒形の径が、約0.1インチ〜約1.0インチである、請求項34に記載のガス分散プレートアセンブリ。
- 前記下流端部における円錐体または円筒形の径が、約0.1インチ〜約0.5インチである、請求項34に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項34に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の深さが、約0.1〜約1.0インチである、請求項34に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項34に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が、約20°〜約40°である、請求項34に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項34に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が一定である、請求項42に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項31に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素が長方形である、請求項31に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項45に記載のガス分散プレートアセンブリ。
- 上流側と下流側とを有するディフューザプレート要素と、
前記ディフューザプレート要素に結合された高周波電源と、
前記ディフューザプレート要素の上流側と下流側の間を通り、かつ前記下流側に中空カソードキャビティを備える内側及び外側ガス流路であって、前記内側ガス流路の中空カソードキャビティの容積密度が、前記外側ガス流路の中空カソードキャビティの容積密度よりも小さい、内側及び外側ガス流路と、
前記ディフューザプレート要素の下流側に隣接する基板支持体とを備える、プラズマ処理チャンバ。 - 前記中空カソードキャビティが、円錐体または円筒形状であり、前記中空カソードキャビティの容積密度を、前記中空カソードキャビティの径または長さあるいはそれらの両方を増加させることによって増加させることができる、請求項47に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチである、請求項48に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項48に記載のプラズマ処理チャンバ。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項48に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項48に記載のプラズマ処理チャンバ。
- 前記円錐体のフレア角度が一定である、請求項52に記載のプラズマ処理チャンバ。
- 隣接するガス流路の前記中空カソードキャビティの下流端部間の間隔が、多くて約0.6インチである、請求項47に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項47に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素が長方形である、請求項47に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項56に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の径または長さあるいはそれらの両方が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加する、請求項48に記載のプラズマ処理チャンバ。
- 上流側と下流側とを有するディフューザプレート要素と、
前記ディフューザプレート要素に結合された高周波電源と、
前記ディフューザプレート要素の上流側と下流側の間を通り、かつ前記下流側に中空カソードキャビティを備える内側及び外側ガス流路であって、前記内側ガス流路の中空カソードキャビティの表面積密度が、前記外側ガス流路の中空カソードキャビティの表面積密度よりも小さい、内側及び外側ガス流路と、
前記ディフューザプレート要素の下流側に隣接する基板支持体とを備える、プラズマ処理チャンバ。 - 前記中空カソードキャビティが、円錐体または円筒形状であり、前記中空カソードキャビティの容積密度を、前記中空カソードキャビティの径または長さあるいはそれらの両方を増加させることによって増加させることができる、請求項59に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチである、請求項60に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項60に記載のプラズマ処理チャンバ。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項60に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項60に記載のプラズマ処理チャンバ。
- 前記円錐体のフレア角度が一定である、請求項64に記載のプラズマ処理チャンバ。
- 隣接するガス流路の前記中空カソードキャビティの下流端部間の間隔が、多くて約0.6インチである、請求項59に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項69に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素が長方形である、請求項59に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項68に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の径または長さあるいはそれらの両方が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加する、請求項60に記載のプラズマ処理チャンバ。
- 上流側と下流側とを有するディフューザプレート要素と、
前記ディフューザプレート要素に結合された高周波電源と、
前記ディフューザプレート要素の上流側と下流側の間を通る複数のガス流路であって、各ガス流路が、前記ディフューザプレート要素の下流側と交わるディフューザ穴を有し、前記複数のガス流路の中空カソードキャビティの表面積密度が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加する、複数のガス流路と、
前記ディフューザプレート要素の下流側に隣接する基板支持体とを備える、プラズマ処理チャンバ。 - 前記複数のガス流路の中空カソードキャビティの表面積密度が、約10%〜約100%である、請求項71に記載のプラズマ処理チャンバ。
- 前記複数のガス流路の中空カソードキャビティが、円錐体または円筒形状である、請求項71に記載のプラズマ処理チャンバ。
- 前記ガス流路が、実質的に同一である、請求項71に記載のプラズマ処理チャンバ。
- 前記下流端部における円錐体または円筒形の径が、約0.1インチ〜約1.0インチである、請求項73に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項73に記載のプラズマ処理チャンバ。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項73に記載のプラズマ処理チャンバ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項73に記載のプラズマ処理チャンバ。
- 前記円錐体のフレア角度が一定である、請求項78に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項71に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素が長方形である、請求項71に記載のプラズマ処理チャンバ。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項81に記載のプラズマ処理チャンバ。
- 上流側と下流側とを有するディフューザプレート要素であって、ガスディフューザプレートが、多数の同心ゾーンに分割されている、ディフューザプレート要素と、
前記ディフューザプレート要素の上流側と下流側の間を通る複数のガス流路であって、各ゾーンのガス流路が同一であり、かつ各ゾーンのガス流路の中空カソードキャビティの密度、容積、または表面積が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加する、複数のガス流路とを備える、プラズマ処理チャンバのためのガス分散プレートアセンブリ。 - 前記同心ゾーンの数が、少なくとも2つである、請求項83に記載のガス分散プレートアセンブリ。
- 孔の密度が、約10%〜約100%である、請求項83に記載のガス分散プレートアセンブリ。
- 孔の密度が、約30%〜約100%である、請求項83に記載のガス分散プレートアセンブリ。
- 前記中空カソードキャビティが、円錐体または円筒形状である、請求項83に記載のガス分散プレートアセンブリ。
- 前記下流端部における円錐体または円筒形の径が、約0.1インチ〜約1.0インチである、請求項87に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項87に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項87に記載のガス分散プレートアセンブリ。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項87に記載のガス分散プレートアセンブリ。
- 前記円錐体のフレア角度が一定である、請求項91に記載のガス分散プレートアセンブリ。
- 隣接するガス流路の前記中空カソードキャビティの下流端部間の間隔が、多くて約0.6インチである、請求項83に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項83に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素が長方形である、請求項83に記載のガス分散プレートアセンブリ。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項95に記載のガス分散プレートアセンブリ。
- プラズマ処理チャンバのためのガスディフューザプレートを形成する方法であって、
上流側と下流側を有するガスディフューザプレートと、前記ディフューザプレートの上流側と下流側の間を通る複数のガス流路とを形成するステップと、
前記ディフューザプレートを湾曲させて、下流側に対して滑らかに凸状にするステップと、
その凸状面を機械加工して、前記下流側面を平坦にするステップと、
を含む、方法。 - 前記上流側と下流側を有するガスディフューザプレートと、前記ディフューザプレートの上流側と下流側の間を通る複数のガス流路とを形成するステップが、
前記ディフューザプレートの全体にわたって同じ寸法を有する中空カソードキャビティを形成する工程を含む、請求項97に記載の方法。 - 前記中空カソードキャビティが、円錐体または円筒形状である、請求項98に記載の方法。
- 前記上流側と下流側を有するガスディフューザプレートと、前記ディフューザプレートの上流側と下流側の間を通る複数のガス流路とを形成するステップが、
前記ディフューザプレートの中心部から縁部に向かって徐々に増加する容積を有する中空カソードキャビティを形成する工程を含む、請求項97に記載の方法。 - 前記中空カソードキャビティが、円錐体または円筒形状である、請求項100に記載の方法。
- 前記中空カソードキャビティの容積が、前記円錐体または円筒形の径および/または深さを増加させることによって増加させることができる、請求項101に記載の方法。
- 前記円錐体または円筒形の径が、約0.1〜約0.5インチであり、前記円錐体または円筒形の深さが、約0.1〜約1.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項102に記載の方法。
- 前記円錐体のフレア角度が、一定である、請求項103に記載の方法。
- 前記ディフューザプレートを湾曲させて、下流側に対して滑らかに凸状にするステップが、
前記ディフューザプレートを、前記ディフューザプレートを前記縁部のみで支持する制御された熱環境内に配置する工程と、
前記ディフューザプレートを、熱条件下で、前記ディフューザプレートが柔らかくなる温度で処理する工程と、
前記ディフューザプレートの湾曲が所定の値に達したときに、熱処理プロセスを停止する工程と、
を含む、請求項97に記載の方法。 - 前記温度が400℃以上である、請求項105に記載の方法。
- 前記処理温度に一旦達すると、前記ディフューザプレートが、等温条件下で処理される、請求項105に記載の方法。
- 前記ディフューザプレートを湾曲させて、下流側に対して滑らかに凸状にするステップが、
前記ディフューザプレートを、前記ディフューザプレートを前記縁部のみで支持する真空アセンブリ上に配置する工程と、
前記ディフューザプレートと、前記真空アセンブリの底部プレートとの間のボリュームに真空を引く工程と、
真空を引くことを停止して、前記ディフューザプレートと、前記真空アセンブリの底部プレートとの間のボリュームの圧力を、周囲環境と等しくなるように戻す工程と、
を含む、請求項97に記載の方法。 - プラズマ処理チャンバのためのガスディフューザプレート要素を形成する方法であって、
上流側と下流側を有するガスディフューザプレートと、前記ディフューザプレートの上流側と下流側の間を通る複数のガス流路とを形成するステップであって、前記ディフューザプレート要素の中空カソードキャビティの密度、容積または表面積が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加するステップを含む、方法。 - 前記機械加工が、コンピュータ数値制御マシニング、または手動制御マシニングのいずれかによって実施される、請求項109に記載の方法。
- 前記中空カソードキャビティが、円錐体または円筒形状である、請求項109に記載の方法。
- 前記円錐体または円筒形の径が、約0.1〜約0.5インチであり、前記円錐体または円筒形の深さが、約0.1〜約1.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項111に記載の方法。
- 前記円錐体のフレア角度が一定である、請求項112に記載の方法。
- プラズマ処理チャンバのためのガスディフューザプレート要素を形成する方法であって、
上流側と下流側を有するガスディフューザプレート要素と、前記ディフューザプレート要素の上流側と下流側の間を通る複数のガス流路とを形成するステップであって、前記ディフューザプレート要素の中空カソードキャビティの密度及び容積または密度及び表面積が、前記ディフューザプレート要素の中心部から縁部に向かって徐々に増加するステップを含む、方法。 - 前記機械加工が、コンピュータ数値制御マシニング、または手動制御マシニングのいずれかによって実施される、請求項114に記載の方法。
- 前記中空カソードキャビティが、円錐体または円筒形状である、請求項114に記載の方法。
- 前記円錐体または円筒形の径が、約0.1〜約0.5インチであり、前記円錐体または円筒形の深さが、約0.1〜約1.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項116に記載の方法。
- 前記円錐体のフレア角度が一定である、請求項117に記載の方法。
- 基板上に薄膜を堆積する方法であって、
上流側を有するガスディフューザプレート要素と、前記ディフューザプレート要素の上流側と下流側の間を通り、かつ前記下流側に中空カソードキャビティを備える内側及び外側ガス流路とを有するプロセスチャンバ内に基板を配置するステップであって、前記内側ガス流路の、中空カソードキャビティ容積密度、または中空カソードキャビティ表面積密度、あるいは中空カソードキャビティ密度のいずれかが、前記外側ガス流路の同じパラメータよりも小さいステップと、
前記ディフューザプレート要素を介して、基板支持体上に支持された基板の方へプロセスガスを流すステップと、
前記ディフューザプレート要素と前記基板支持体との間に、プラズマを生成するステップと、
前記プロセスチャンバ内の前記基板上に薄膜を堆積するステップと、
を含む、方法。 - 前記中空カソードキャビティの密度が、約10%〜約100%である、請求項119に記載の方法。
- 前記中空カソードキャビティが、円錐体または円筒形状である、請求項119に記載の方法。
- 前記下流端部における円錐体または円筒形の径が、約0.1インチ〜約1.0インチである、請求項121に記載の方法。
- 前記円錐体または円筒形の深さが、約0.1〜約2.0インチである、請求項121に記載の方法。
- 前記円錐体のフレア角度が、約10°〜約50°である、請求項121に記載の方法。
- 前記円錐体または円筒形の径が、約0.1〜約1.0インチであり、前記円錐体または円筒形の深さが、約0.1〜約2.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項121に記載の方法。
- 前記円錐体のフレア角度が一定である、請求項125に記載の方法。
- 隣接するガス流路の前記中空カソードキャビティの下流端部間の間隔が、多くて約0.6インチである、請求項119に記載の方法。
- 前記ディフューザプレート要素の厚さが、約0.8インチ〜約3.0インチである、請求項119に記載の方法。
- 前記ディフューザプレート要素が長方形である、請求項119に記載の方法。
- 前記ディフューザプレート要素のサイズが、少なくとも1,200,000mm2である、請求項129に記載の方法。
- 前記プロセスチャンバが、プラズマCVDチャンバである、請求項129に記載の方法。
- 前記薄膜が、フラットパネルディスプレイを形成する基板上に堆積される、請求項129に記載の方法。
- 前記薄膜の厚さ及び特性の均一性が、前記ディフューザプレート要素の全域で、前記中空カソードキャビティの径及び深さを調整することによって変更することができる、請求項129に記載の方法。
- 前記薄膜の厚さ及び特性の均一性が、前記ディフューザプレート要素の全域で、前記中空カソードキャビティの表面積を調整することによって変更することができる、請求項129に記載の方法。
- 前記薄膜が、二酸化シリコン膜(SiO2)、シリコン酸窒化膜(SiON)、窒化シリコン(SiN)、アモルファスシリコン(α−Si)またはドープされたアモルファスシリコン(ドープされたα−Si)とすることができる、請求項129に記載の方法。
- 上面及び底面を有するボディと、
前記上面と底面の間の複数のガス流路と、
外側領域及び内側領域であって、前記外側領域の前記上面と底面の間の前記ボディが、前記内側領域の前記上面と底面の間の前記ボディよりも厚い、外側領域及び内側領域とを備える、ディフューザプレート。 - 前記上面が実質的に平坦であり、前記底面が凹状である、請求項136に記載のディフューザプレート。
- 前記上面が凹状であり、前記底面が実質的に平坦である、請求項136に記載のディフューザプレート。
- プラズマ処理チャンバのためのガスディフューザプレートを形成する方法であって、
上流側と下流側を有するガスディフューザプレートと、前記ディフューザプレートの上流側と下流側の間を通る複数のガス流路とを形成するステップと、
前記下流面を機械加工して、前記下流面を凹状に形成するステップと
を含む、方法。 - 前記上流側と下流側を有するガスディフューザプレートと、前記ディフューザプレートの上流側と下流側の間を通る複数のガス流路とを形成するステップが、
前記ディフューザプレートの全体にわたって同じサイズを有する中空カソードキャビティを形成する工程を含む、請求項139に記載の方法。 - 前記中空カソードキャビティが、円錐体または円筒形状である、請求項140に記載の方法。
- 前記機械加工が、コンピュータ数値制御マシニング、または手動制御マシニングのいずれかによって実施される、請求項139に記載の方法。
- 前記円錐体または円筒形の径が、約0.1〜約0.5インチであり、前記円錐体または円筒形の深さが、約0.1〜約1.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項141に記載の方法。
- 前記円錐体のフレア角度が一定である、請求項143に記載の方法。
- 前記ディフューザプレートを湾曲させて、前記下流面を実質的に平坦にするステップを更に含む、請求項139に記載の方法。
- プラズマ処理チャンバのためのガスディフューザプレートを形成する方法であって、
上流側及び下流側を有するディフューザプレートを湾曲させて、該下流面を凹状にし、かつ該上流面を凸状にするステップと、
仮想平坦下流面から同じ深さに中空カソードキャビティを形成することにより、前記上流側と下流側の間を通る複数のガス流路を形成するステップと、
全てのガス流路を、前記中空カソードキャビティに接続される同じサイズのオリフィス穴を有するように形成するステップとを含む、方法。 - 前記中空カソードキャビティが、前記ディフューザプレートの全体にわたって、前記仮想平坦下流面から同じサイズ及び形状を有する、請求項146に記載の方法。
- 前記中空カソードキャビティが、円錐体または円筒形状である、請求項147に記載の方法。
- 前記円錐体または円筒形の径が、約0.1〜約0.5インチであり、前記円錐体または円筒形の深さが、約0.1〜約1.0インチであり、前記円錐体のフレア角度が、約10°〜約50°である、請求項148に記載の方法。
- 前記円錐体のフレア角度が一定である、請求項149に記載の方法。
- 前記ディフューザプレートを湾曲させて、前記下流面を実質的に平坦にするステップを更に含む、請求項146に記載の方法。
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2004
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- 2004-11-25 TW TW093136349A patent/TWI259506B/zh active
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- 2004-12-20 KR KR1020040108843A patent/KR100856690B1/ko active IP Right Grant
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- 2006-06-22 US US11/473,661 patent/US20060236934A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
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EP2261393A2 (en) | 2010-12-15 |
US20160056019A1 (en) | 2016-02-25 |
US20110290183A1 (en) | 2011-12-01 |
EP1595974A2 (en) | 2005-11-16 |
JP4541117B2 (ja) | 2010-09-08 |
US10262837B2 (en) | 2019-04-16 |
TWI259506B (en) | 2006-08-01 |
EP2261393A3 (en) | 2012-03-07 |
US20060236934A1 (en) | 2006-10-26 |
KR100931910B1 (ko) | 2009-12-15 |
KR20050109041A (ko) | 2005-11-17 |
US20050251990A1 (en) | 2005-11-17 |
TW200537561A (en) | 2005-11-16 |
US10312058B2 (en) | 2019-06-04 |
KR100856690B1 (ko) | 2008-09-04 |
JP2010050466A (ja) | 2010-03-04 |
JP5202486B2 (ja) | 2013-06-05 |
US8083853B2 (en) | 2011-12-27 |
US20180025890A1 (en) | 2018-01-25 |
KR20070091589A (ko) | 2007-09-11 |
US9200368B2 (en) | 2015-12-01 |
EP1595974A3 (en) | 2006-04-05 |
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