JP7164632B2 - フラットパネルプロセス機器用の温度制御ガスディフューザー - Google Patents
フラットパネルプロセス機器用の温度制御ガスディフューザー Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Description
Claims (14)
- ディフューザーであって、
上流面及び下流面を有する上部ディフューザープレートと;
前記上部ディフューザープレート中に配置される複数のオリフィス孔であって、各オリフィス孔が、前記上部ディフューザープレート中に配置され且つ前記下流面によって画定された少なくとも一つの流体チャネルに隣接しており、
各流体チャネルが、前記上部ディフューザープレート中に配置された供給チャネルに接続されており、前記供給チャネルは、熱交換器の流体供給導管と結合可能であるように構成された供給入口を有し、且つ
各流体チャネルが、前記上部ディフューザープレート中に配置された戻りチャネルに接続されており、前記戻りチャネルは、前記熱交換器の流体戻り導管と結合可能であるように構成された戻り出口を有する、
複数のオリフィス孔と;
前記上部ディフューザープレートに結合され且つ上流面及び下流面を有する、底部ディフューザープレートと;
前記複数のオリフィス孔のうちの1つのオリフィス孔に結合し、ある角度で先細りした側壁を有する第2のボアと
を含む、ディフューザー。 - 第1のボアが、前記複数のオリフィス孔のうちの前記1つのオリフィス孔に結合している、請求項1に記載のディフューザー。
- 前記オリフィス孔に隣接している各流体チャネルが、該オリフィス孔からの第1の距離である、請求項1に記載のディフューザー。
- 前記熱交換器が、前記供給チャネル及び前記戻りチャネルと結合しているとき、流体を前記流体供給導管から前記供給チャネル、各流体チャネル、前記戻りチャネルを通って、及び前記流体戻り導管を通って前記熱交換器へ循環させるよう動作可能である、請求項1に記載のディフューザー。
- 前記熱交換器に結合したコントローラが、前記流体の循環を制御して所定のディフューザー温度を維持するよう動作可能である、請求項4に記載のディフューザー。
- 前記上部ディフューザープレート中に配置された熱電対が、前記コントローラに結合している、請求項5に記載のディフューザー。
- 前記上部ディフューザープレートの前記下流面が、前記底部ディフューザープレートの前記上流面に対して、鋳造、ろう付け、鍛造、熱間静水圧プレス及び焼結のうちの少なくとも一つがなされている、請求項1に記載のディフューザー。
- 処理チャンバ中に配置される基板支持体に対向して該処理チャンバ中に配置可能である、請求項1に記載のディフューザー。
- ディフューザーであって、
上流面及び下流面を有する上部ディフューザープレートと;
前記上部ディフューザープレート中に配置される複数の第1のガス通路セクションであって、各第1のガス通路が、前記上部ディフューザープレート中に配置された少なくとも一つの流体チャネルに隣接しており、
各流体チャネルが、前記上部ディフューザープレート中に配置された供給チャネル及び供給バイパスチャネルのうちの一つに接続されており、前記供給チャネルが熱交換器の流体供給導管と結合可能であるように構成された供給入口を有し、前記供給バイパスチャネルが前記供給チャネルと流体連結しており、且つ
各流体チャネルが、前記上部ディフューザープレート中に配置された戻りチャネル及び戻りバイパスチャネルのうちの一つに結合しており、前記戻りチャネルが前記熱交換器の流体戻り導管と結合可能であるように構成された戻り出口を有し、前記戻りバイパスチャネルが前記戻りチャネルと流体連結している
複数の第1のガス通路セクションと;
前記上部ディフューザープレートに結合され且つ上流面及び下流面を有する、底部ディフューザープレートと
を含む、ディフューザー。 - チャンバであって、
支持アセンブリ;及び
前記支持アセンブリに対向して配置されているディフューザーに結合した高周波(RF)電源
を含み、該ディフューザーが:
上流面及び下流面を有する上部ディフューザープレートと;
前記上部ディフューザープレート中に配置される複数のオリフィス孔であって、各オリフィス孔が、前記上部ディフューザープレート中に配置され且つ前記下流面によって画定された少なくとも一つの流体チャネルに隣接しており、
各流体チャネルが、前記上部ディフューザープレート中に配置された供給チャネルに接続されており、前記供給チャネルは、熱交換器の流体供給導管と結合可能であるように構成された供給入口を有し、且つ
各流体チャネルが、前記上部ディフューザープレート中に配置された戻りチャネルに接続されており、前記戻りチャネルは、前記熱交換器の流体戻り導管と結合可能であるように構成された戻り出口を有する、
複数のオリフィス孔と;
前記上部ディフューザープレートに結合された、上流面及び下流面を有する底部ディフューザープレートと;
前記複数のオリフィス孔のうちの1つのオリフィス孔に結合し、ある角度で先細りした側壁を有する第2のボアと
を含む、チャンバ。 - 前記熱交換器が、前記供給チャネル及び前記戻りチャネルと結合しているとき、流体を前記流体供給導管から前記供給チャネル、各流体チャネル、前記戻りチャネルを通って、及び前記流体戻り導管を通って前記熱交換器へ循環させるよう動作可能である、請求項10に記載のチャンバ。
- 前記熱交換器に結合したコントローラが、前記流体の循環を制御して所定のディフューザー温度を維持するよう動作可能である、請求項11に記載のチャンバ。
- 前記上部ディフューザープレート中に配置された熱電対が、前記コントローラに結合している、請求項12に記載のチャンバ。
- 前記上部ディフューザープレートの前記下流面が、前記底部ディフューザープレートの前記上流面に対して、鋳造、ろう付け、鍛造、熱間静水圧プレス及び焼結のうちの少なくとも一つがなされている、請求項10に記載のチャンバ。
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Application Number | Priority Date | Filing Date | Title |
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US201862682370P | 2018-06-08 | 2018-06-08 | |
US62/682,370 | 2018-06-08 | ||
PCT/US2019/035932 WO2019236937A1 (en) | 2018-06-08 | 2019-06-07 | Temperature controlled gas diffuser for flat panel process equipment |
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JP2021525963A JP2021525963A (ja) | 2021-09-27 |
JP7164632B2 true JP7164632B2 (ja) | 2022-11-01 |
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JP (1) | JP7164632B2 (ja) |
KR (1) | KR102572740B1 (ja) |
CN (1) | CN112262228A (ja) |
WO (1) | WO2019236937A1 (ja) |
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WO2023064128A1 (en) * | 2021-10-12 | 2023-04-20 | Applied Materials, Inc. | Deposition chamber system diffusers with embedded thermocouple regions |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
JP2014220231A (ja) | 2013-02-15 | 2014-11-20 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 温度制御機能を備えるマルチプレナムシャワーヘッド |
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US6635117B1 (en) * | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
US8110889B2 (en) * | 2009-04-28 | 2012-02-07 | Applied Materials, Inc. | MOCVD single chamber split process for LED manufacturing |
US20110256692A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
-
2019
- 2019-06-07 WO PCT/US2019/035932 patent/WO2019236937A1/en active Application Filing
- 2019-06-07 JP JP2020567203A patent/JP7164632B2/ja active Active
- 2019-06-07 KR KR1020217000441A patent/KR102572740B1/ko active IP Right Grant
- 2019-06-07 CN CN201980039055.4A patent/CN112262228A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
JP2014220231A (ja) | 2013-02-15 | 2014-11-20 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 温度制御機能を備えるマルチプレナムシャワーヘッド |
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KR102572740B1 (ko) | 2023-08-29 |
KR20210006019A (ko) | 2021-01-15 |
JP2021525963A (ja) | 2021-09-27 |
WO2019236937A1 (en) | 2019-12-12 |
CN112262228A (zh) | 2021-01-22 |
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