JP7110020B2 - 基板支持装置およびプラズマ処理装置 - Google Patents
基板支持装置およびプラズマ処理装置 Download PDFInfo
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Description
図1~図3を用いて、実施形態1の基板支持装置およびプラズマ処理装置について説明する。
図1は、実施形態1にかかるプラズマ処理装置1の構成の一例を模式的に示す断面図である。プラズマ処理装置1は、例えばRIE(Reactive Ion Etching)装置として構成されている。
次に、図2及び図3を用いて、リフトピン50及びカバー30について説明する。図2は、実施形態1にかかるリフトピン50及びカバー30の構成の一例を模式的に示す図である。
図4および図5を用いて、実施形態2の基板支持装置について説明する。実施形態2の基板支持装置においては、静電チャックがヒータを有さないクーラント循環方式である点が、上述の実施形態1とは異なる。
上述の実施形態1,2のカバー30,130は、封止構造を有することとしたが、これに限られない。チャンバの底壁から突出する支持部(図1の符号12を参照)の筒状空間が、大気圧等である場合には、ウェハ裏面の上部空間に対して、リフトピン周辺の下部空間がさらなる陽圧となることもあり得る。その場合、カバーの下端部には封止構造を設けず、静電チャックのリフトピン収納穴内の支持部材上端部から、カバーを浮かせ気味に保ち、下部空間側の雰囲気を上部空間側へ流出させることが好ましい。これにより、カバーに圧力負荷がかかってカバーやウェハを破損してしまうことを抑制することができる。
Claims (5)
- プラズマ処理装置の処理容器内で基板を支持する基板支持装置であって、
少なくともセラミックを含んで構成される載置板を備え、前記載置板に前記基板が静電的に吸着される静電チャックと、
前記静電チャック内部に収納可能に構成され、前記静電チャックに対して前記基板の受け渡しを行うリフトピンと、
前記載置板と同種のセラミックを少なくとも含んで前記リフトピンに対して着脱可能に構成されるカバーと、を備え、
前記静電チャックは、
前記載置板の下にヒータと均熱板とを備え、
前記カバーは、
前記リフトピンが前記静電チャック内部に収納された状態で、前記静電チャックの前記均熱板と略等しい高さに位置する均熱板を前記カバーの内部に含む、
基板支持装置。 - プラズマ処理装置の処理容器内で基板を支持する基板支持装置であって、
少なくともセラミックを含んで構成される載置板を備え、前記載置板に前記基板が静電的に吸着される静電チャックと、
前記静電チャック内部に収納可能に構成され、前記静電チャックに対して前記基板の受け渡しを行うリフトピンと、
前記載置板と同種のセラミックを少なくとも含んで前記リフトピンに対して着脱可能に構成されるカバーと、を備え、
前記カバーは、
前記リフトピンの上端部を覆う蓋部および前記リフトピンの側面を覆う筒部を有し、
前記蓋部は、
はめ込み量の調整自在に前記筒部にはめ込み可能に構成される、
基板支持装置。 - プラズマ処理装置の処理容器内で基板を支持する基板支持装置であって、
少なくともセラミックを含んで構成される載置板を備え、前記載置板に前記基板が静電的に吸着される静電チャックと、
前記静電チャック内部に収納可能に構成され、前記静電チャックに対して前記基板の受け渡しを行うリフトピンと、
前記載置板と同種のセラミックを少なくとも含んで前記リフトピンに対して着脱可能に構成されるカバーと、を備え、
前記リフトピンは、
前記リフトピン全体を支持する下部部材と、
はめ込み量の調整自在に、前記下部部材にはめ込み可能に構成される上部部材と、を有する、
基板支持装置。 - 基板を処理する処理容器と、
前記処理容器内に電力を供給してプラズマを生成する電源と、
少なくともセラミックを含んで構成される載置板を有し、前記処理容器内で前記載置板に前記基板が静電的に吸着される静電チャックと、
前記静電チャック内部に収納可能に構成され、前記静電チャックに対し前記基板の受け渡しを行うリフトピンと、
前記載置板と同種のセラミックを少なくとも含んで前記リフトピンに対して着脱可能に構成されるカバーと、を備え、
前記カバーは、
前記リフトピンの上端部を覆う蓋部および前記リフトピンの側面を覆う筒部を有し、
前記蓋部は、
はめ込み量の調整自在に前記筒部にはめ込み可能に構成される、
プラズマ処理装置。 - 基板を処理する処理容器と、
前記処理容器内に電力を供給してプラズマを生成する電源と、
少なくともセラミックを含んで構成される載置板を有し、前記処理容器内で前記載置板に前記基板が静電的に吸着される静電チャックと、
前記静電チャック内部に収納可能に構成され、前記静電チャックに対し前記基板の受け渡しを行うリフトピンと、
前記載置板と同種のセラミックを少なくとも含んで前記リフトピンに対して着脱可能に構成されるカバーと、を備え、
前記リフトピンは、
前記リフトピン全体を支持する下部部材と、
はめ込み量の調整自在に、前記下部部材にはめ込み可能に構成される上部部材と、を有する、
プラズマ処理装置。
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JP2018138413A JP7110020B2 (ja) | 2018-07-24 | 2018-07-24 | 基板支持装置およびプラズマ処理装置 |
US16/243,160 US11094574B2 (en) | 2018-07-24 | 2019-01-09 | Substrate supporting device and plasma processing apparatus |
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JP2018138413A JP7110020B2 (ja) | 2018-07-24 | 2018-07-24 | 基板支持装置およびプラズマ処理装置 |
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CN113488370A (zh) * | 2021-07-06 | 2021-10-08 | 北京屹唐半导体科技股份有限公司 | 用于等离子体处理设备的升降销组件 |
CN113370073A (zh) * | 2021-07-14 | 2021-09-10 | 北京烁科精微电子装备有限公司 | 晶圆承载座及研磨机 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000195935A (ja) | 1998-12-25 | 2000-07-14 | Nec Kyushu Ltd | 半導体製造装置 |
JP2000294620A (ja) | 1999-04-09 | 2000-10-20 | Nippon Asm Kk | 半導体処理装置 |
JP2013229367A (ja) | 2012-04-24 | 2013-11-07 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハ製造装置およびそれを用いたエピタキシャルウェーハの製造方法 |
JP2015228488A (ja) | 2014-05-03 | 2015-12-17 | 株式会社半導体エネルギー研究所 | フィルム状部材の支持装置 |
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JPH05175318A (ja) * | 1991-12-20 | 1993-07-13 | Fujitsu Ltd | 静電チャックの基板脱着方法 |
US5665167A (en) * | 1993-02-16 | 1997-09-09 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus having a workpiece-side electrode grounding circuit |
US6572708B2 (en) * | 2000-02-28 | 2003-06-03 | Applied Materials Inc. | Semiconductor wafer support lift-pin assembly |
WO2002095386A2 (en) * | 2001-05-18 | 2002-11-28 | Regents Of The University Of Minnesota | Metal/metal oxide electrode as ph-sensor and methods of production |
US6528767B2 (en) * | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
KR20040026427A (ko) * | 2002-09-24 | 2004-03-31 | 삼성전자주식회사 | 리프트 핀 및 이를 이용한 기판 리프팅 방법 |
KR20040070008A (ko) * | 2003-01-29 | 2004-08-06 | 쿄세라 코포레이션 | 정전척 |
JP2004259974A (ja) | 2003-02-26 | 2004-09-16 | Kyocera Corp | リフトピン |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
KR20100100269A (ko) | 2009-03-06 | 2010-09-15 | 주식회사 코미코 | 리프트 핀 및 이를 포함하는 웨이퍼 처리 장치 |
US10612135B2 (en) * | 2016-07-19 | 2020-04-07 | Applied Materials, Inc. | Method and system for high temperature clean |
JP6808596B2 (ja) | 2017-03-10 | 2021-01-06 | キオクシア株式会社 | センシングシステム |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000195935A (ja) | 1998-12-25 | 2000-07-14 | Nec Kyushu Ltd | 半導体製造装置 |
JP2000294620A (ja) | 1999-04-09 | 2000-10-20 | Nippon Asm Kk | 半導体処理装置 |
JP2013229367A (ja) | 2012-04-24 | 2013-11-07 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハ製造装置およびそれを用いたエピタキシャルウェーハの製造方法 |
JP2015228488A (ja) | 2014-05-03 | 2015-12-17 | 株式会社半導体エネルギー研究所 | フィルム状部材の支持装置 |
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