|
US7157385B2
(en)
|
2003-09-05 |
2007-01-02 |
Micron Technology, Inc. |
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
|
|
US6300219B1
(en)
|
1999-08-30 |
2001-10-09 |
Micron Technology, Inc. |
Method of forming trench isolation regions
|
|
FI118804B
(fi)
*
|
1999-12-03 |
2008-03-31 |
Asm Int |
Menetelmä oksidikalvojen kasvattamiseksi
|
|
FI117979B
(fi)
*
|
2000-04-14 |
2007-05-15 |
Asm Int |
Menetelmä oksidiohutkalvojen valmistamiseksi
|
|
US6620723B1
(en)
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
|
EP1772534A3
(en)
*
|
2000-09-28 |
2007-04-25 |
The President and Fellows of Harvard College |
Tungsten-containing and hafnium-containing precursors for vapor deposition
|
|
US20070014801A1
(en)
*
|
2001-01-24 |
2007-01-18 |
Gish Kurt C |
Methods of diagnosis of prostate cancer, compositions and methods of screening for modulators of prostate cancer
|
|
JP3915054B2
(ja)
*
|
2002-03-05 |
2007-05-16 |
株式会社トリケミカル研究所 |
膜形成材料、膜形成方法、及び素子
|
|
US6730163B2
(en)
*
|
2002-03-14 |
2004-05-04 |
Micron Technology, Inc. |
Aluminum-containing material and atomic layer deposition methods
|
|
AU2003228402A1
(en)
|
2002-03-28 |
2003-10-13 |
President And Fellows Of Harvard College |
Vapor deposition of silicon dioxide nanolaminates
|
|
KR100468847B1
(ko)
*
|
2002-04-02 |
2005-01-29 |
삼성전자주식회사 |
알콜을 이용한 금속산화물 박막의 화학기상증착법
|
|
US7439191B2
(en)
*
|
2002-04-05 |
2008-10-21 |
Applied Materials, Inc. |
Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
|
|
US6846516B2
(en)
*
|
2002-04-08 |
2005-01-25 |
Applied Materials, Inc. |
Multiple precursor cyclical deposition system
|
|
US20030235961A1
(en)
*
|
2002-04-17 |
2003-12-25 |
Applied Materials, Inc. |
Cyclical sequential deposition of multicomponent films
|
|
JP3627106B2
(ja)
*
|
2002-05-27 |
2005-03-09 |
株式会社高純度化学研究所 |
原子層吸着堆積法によるハフニウムシリケート薄膜の製造方法
|
|
US20030232501A1
(en)
*
|
2002-06-14 |
2003-12-18 |
Kher Shreyas S. |
Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
|
|
US7067439B2
(en)
*
|
2002-06-14 |
2006-06-27 |
Applied Materials, Inc. |
ALD metal oxide deposition process using direct oxidation
|
|
US6858547B2
(en)
|
2002-06-14 |
2005-02-22 |
Applied Materials, Inc. |
System and method for forming a gate dielectric
|
|
CN1675402A
(zh)
*
|
2002-07-12 |
2005-09-28 |
哈佛学院院长等 |
氮化钨的汽相沉积
|
|
US20040014327A1
(en)
*
|
2002-07-18 |
2004-01-22 |
Bing Ji |
Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
|
|
US6960538B2
(en)
*
|
2002-08-21 |
2005-11-01 |
Micron Technology, Inc. |
Composite dielectric forming methods and composite dielectrics
|
|
US6958300B2
(en)
*
|
2002-08-28 |
2005-10-25 |
Micron Technology, Inc. |
Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
|
|
US7041609B2
(en)
*
|
2002-08-28 |
2006-05-09 |
Micron Technology, Inc. |
Systems and methods for forming metal oxides using alcohols
|
|
US7112485B2
(en)
*
|
2002-08-28 |
2006-09-26 |
Micron Technology, Inc. |
Systems and methods for forming zirconium and/or hafnium-containing layers
|
|
US7033560B2
(en)
*
|
2002-08-30 |
2006-04-25 |
Air Products And Chemicals, Inc. |
Single source mixtures of metal siloxides
|
|
US6936086B2
(en)
*
|
2002-09-11 |
2005-08-30 |
Planar Systems, Inc. |
High conductivity particle filter
|
|
KR100473806B1
(ko)
*
|
2002-09-28 |
2005-03-10 |
한국전자통신연구원 |
유기물 박막 및 유기물 소자를 위한 대면적 유기물 기상증착 장치 및 제조 방법
|
|
DE10248980B4
(de)
|
2002-10-21 |
2004-11-11 |
Infineon Technologies Ag |
Verfahren zur Herstellung strukturierter Schichten aus Siliziumdioxid auf senkrecht oder geneigt zu einer Substratoberfläche angeordneten Prozessflächen
|
|
US7262133B2
(en)
|
2003-01-07 |
2007-08-28 |
Applied Materials, Inc. |
Enhancement of copper line reliability using thin ALD tan film to cap the copper line
|
|
JP4009550B2
(ja)
*
|
2003-03-27 |
2007-11-14 |
エルピーダメモリ株式会社 |
金属酸化膜の形成方法
|
|
US20040198069A1
(en)
*
|
2003-04-04 |
2004-10-07 |
Applied Materials, Inc. |
Method for hafnium nitride deposition
|
|
JP4954448B2
(ja)
*
|
2003-04-05 |
2012-06-13 |
ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． |
有機金属化合物
|
|
TW200506093A
(en)
*
|
2003-04-21 |
2005-02-16 |
Aviza Tech Inc |
System and method for forming multi-component films
|
|
US7141500B2
(en)
|
2003-06-05 |
2006-11-28 |
American Air Liquide, Inc. |
Methods for forming aluminum containing films utilizing amino aluminum precursors
|
|
US6835664B1
(en)
|
2003-06-26 |
2004-12-28 |
Micron Technology, Inc. |
Methods of forming trenched isolation regions
|
|
US7125815B2
(en)
*
|
2003-07-07 |
2006-10-24 |
Micron Technology, Inc. |
Methods of forming a phosphorous doped silicon dioxide comprising layer
|
|
JP4312006B2
(ja)
*
|
2003-08-25 |
2009-08-12 |
株式会社Ａｄｅｋａ |
希土類金属錯体、薄膜形成用原料及び薄膜の製造方法
|
|
US20050056219A1
(en)
*
|
2003-09-16 |
2005-03-17 |
Tokyo Electron Limited |
Formation of a metal-containing film by sequential gas exposure in a batch type processing system
|
|
US7312163B2
(en)
|
2003-09-24 |
2007-12-25 |
Micron Technology, Inc. |
Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
|
|
US6867152B1
(en)
|
2003-09-26 |
2005-03-15 |
Novellus Systems, Inc. |
Properties of a silica thin film produced by a rapid vapor deposition (RVD) process
|
|
US7166528B2
(en)
|
2003-10-10 |
2007-01-23 |
Applied Materials, Inc. |
Methods of selective deposition of heavily doped epitaxial SiGe
|
|
US7618681B2
(en)
|
2003-10-28 |
2009-11-17 |
Asm International N.V. |
Process for producing bismuth-containing oxide films
|
|
WO2009105668A1
(en)
*
|
2008-02-20 |
2009-08-27 |
President And Fellows Of Harvard College |
Bicyclic guanidines, metal complexes thereof and their use in vapor deposition
|
|
US7203001B2
(en)
*
|
2003-12-19 |
2007-04-10 |
Nanoopto Corporation |
Optical retarders and related devices and systems
|
|
KR100519800B1
(ko)
*
|
2004-01-13 |
2005-10-10 |
삼성전자주식회사 |
란타늄 산화막의 제조방법 및 이를 이용한 모스 전계효과트랜지스터 및 캐패시터의 제조방법
|
|
US20050181128A1
(en)
*
|
2004-02-12 |
2005-08-18 |
Nikolov Anguel N. |
Films for optical use and methods of making such films
|
|
KR20050091488A
(ko)
*
|
2004-03-12 |
2005-09-15 |
주식회사 유피케미칼 |
세라믹 또는 금속박막 증착용 전구체 화합물 및 그제조방법
|
|
US7053010B2
(en)
|
2004-03-22 |
2006-05-30 |
Micron Technology, Inc. |
Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
|
|
DE102004015174A1
(de)
|
2004-03-27 |
2005-10-13 |
Aixtron Ag |
Verfahren zum Abscheiden von insbesondere Metalloxiden mittels nicht kontinuierlicher Precursorinjektion
|
|
US20050275944A1
(en)
*
|
2004-06-11 |
2005-12-15 |
Wang Jian J |
Optical films and methods of making the same
|
|
US7670758B2
(en)
*
|
2004-04-15 |
2010-03-02 |
Api Nanofabrication And Research Corporation |
Optical films and methods of making the same
|
|
JP2005322668A
(ja)
*
|
2004-05-06 |
2005-11-17 |
Renesas Technology Corp |
成膜装置および成膜方法
|
|
US20050252449A1
(en)
|
2004-05-12 |
2005-11-17 |
Nguyen Son T |
Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
|
|
US8119210B2
(en)
|
2004-05-21 |
2012-02-21 |
Applied Materials, Inc. |
Formation of a silicon oxynitride layer on a high-k dielectric material
|
|
US20060153995A1
(en)
*
|
2004-05-21 |
2006-07-13 |
Applied Materials, Inc. |
Method for fabricating a dielectric stack
|
|
US20060062917A1
(en)
*
|
2004-05-21 |
2006-03-23 |
Shankar Muthukrishnan |
Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
|
|
US20060019033A1
(en)
*
|
2004-05-21 |
2006-01-26 |
Applied Materials, Inc. |
Plasma treatment of hafnium-containing materials
|
|
US8323754B2
(en)
*
|
2004-05-21 |
2012-12-04 |
Applied Materials, Inc. |
Stabilization of high-k dielectric materials
|
|
US7297608B1
(en)
|
2004-06-22 |
2007-11-20 |
Novellus Systems, Inc. |
Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
|
|
US7202185B1
(en)
|
2004-06-22 |
2007-04-10 |
Novellus Systems, Inc. |
Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer
|
|
US7129189B1
(en)
*
|
2004-06-22 |
2006-10-31 |
Novellus Systems, Inc. |
Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD)
|
|
US7097878B1
(en)
|
2004-06-22 |
2006-08-29 |
Novellus Systems, Inc. |
Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films
|
|
US20060038293A1
(en)
*
|
2004-08-23 |
2006-02-23 |
Rueger Neal R |
Inter-metal dielectric fill
|
|
US7235459B2
(en)
|
2004-08-31 |
2007-06-26 |
Micron Technology, Inc. |
Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry
|
|
US8158488B2
(en)
*
|
2004-08-31 |
2012-04-17 |
Micron Technology, Inc. |
Method of increasing deposition rate of silicon dioxide on a catalyst
|
|
KR100652378B1
(ko)
*
|
2004-09-08 |
2006-12-01 |
삼성전자주식회사 |
안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법
|
|
US7148155B1
(en)
|
2004-10-26 |
2006-12-12 |
Novellus Systems, Inc. |
Sequential deposition/anneal film densification method
|
|
US7790633B1
(en)
|
2004-10-26 |
2010-09-07 |
Novellus Systems, Inc. |
Sequential deposition/anneal film densification method
|
|
US7560352B2
(en)
*
|
2004-12-01 |
2009-07-14 |
Applied Materials, Inc. |
Selective deposition
|
|
US7682940B2
(en)
*
|
2004-12-01 |
2010-03-23 |
Applied Materials, Inc. |
Use of Cl2 and/or HCl during silicon epitaxial film formation
|
|
US7312128B2
(en)
*
|
2004-12-01 |
2007-12-25 |
Applied Materials, Inc. |
Selective epitaxy process with alternating gas supply
|
|
US7064227B1
(en)
|
2004-12-09 |
2006-06-20 |
Air Products And Chemicals, Inc. |
Precursors for silica or metal silicate films
|
|
JP2006169556A
(ja)
*
|
2004-12-13 |
2006-06-29 |
Horiba Ltd |
金属酸化物薄膜の成膜方法
|
|
US7619816B2
(en)
*
|
2004-12-15 |
2009-11-17 |
Api Nanofabrication And Research Corp. |
Structures for polarization and beam control
|
|
US20060127830A1
(en)
*
|
2004-12-15 |
2006-06-15 |
Xuegong Deng |
Structures for polarization and beam control
|
|
US7294583B1
(en)
|
2004-12-23 |
2007-11-13 |
Novellus Systems, Inc. |
Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films
|
|
KR100618879B1
(ko)
*
|
2004-12-27 |
2006-09-01 |
삼성전자주식회사 |
게르마늄 전구체, 이를 이용하여 형성된 ｇｓｔ 박막,상기 박막의 제조 방법 및 상변화 메모리 소자
|
|
KR100640620B1
(ko)
*
|
2004-12-27 |
2006-11-02 |
삼성전자주식회사 |
트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법
|
|
US7482247B1
(en)
|
2004-12-30 |
2009-01-27 |
Novellus Systems, Inc. |
Conformal nanolaminate dielectric deposition and etch bag gap fill process
|
|
EP1676934A1
(en)
*
|
2004-12-30 |
2006-07-05 |
STMicroelectronics S.r.l. |
Chemical vapor deposition chamber for depositing titanium silicon nitride films for forming phase change memories
|
|
US7271112B1
(en)
|
2004-12-30 |
2007-09-18 |
Novellus Systems, Inc. |
Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry
|
|
US7223707B1
(en)
|
2004-12-30 |
2007-05-29 |
Novellus Systems, Inc. |
Dynamic rapid vapor deposition process for conformal silica laminates
|
|
US7235492B2
(en)
*
|
2005-01-31 |
2007-06-26 |
Applied Materials, Inc. |
Low temperature etchant for treatment of silicon-containing surfaces
|
|
US7064224B1
(en)
*
|
2005-02-04 |
2006-06-20 |
Air Products And Chemicals, Inc. |
Organometallic complexes and their use as precursors to deposit metal films
|
|
US7217634B2
(en)
|
2005-02-17 |
2007-05-15 |
Micron Technology, Inc. |
Methods of forming integrated circuitry
|
|
US7510966B2
(en)
|
2005-03-07 |
2009-03-31 |
Micron Technology, Inc. |
Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines
|
|
US7135418B1
(en)
|
2005-03-09 |
2006-11-14 |
Novellus Systems, Inc. |
Optimal operation of conformal silica deposition reactors
|
|
US7109129B1
(en)
|
2005-03-09 |
2006-09-19 |
Novellus Systems, Inc. |
Optimal operation of conformal silica deposition reactors
|
|
FR2883287A1
(fr)
*
|
2005-03-16 |
2006-09-22 |
Air Liquide |
Precurseurs organo-metalliques et leur procede de fabrication
|
|
JP2006261434A
(ja)
|
2005-03-17 |
2006-09-28 |
L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude |
シリコン酸化膜の形成方法
|
|
US20060211241A1
(en)
*
|
2005-03-21 |
2006-09-21 |
Christine Govern |
Protective layer for barrier coating for silicon-containing substrate and process for preparing same
|
|
US20060210800A1
(en)
*
|
2005-03-21 |
2006-09-21 |
Irene Spitsberg |
Environmental barrier layer for silcon-containing substrate and process for preparing same
|
|
US7485338B2
(en)
*
|
2005-03-31 |
2009-02-03 |
Tokyo Electron Limited |
Method for precursor delivery
|
|
US8012847B2
(en)
|
2005-04-01 |
2011-09-06 |
Micron Technology, Inc. |
Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
|
|
US7514119B2
(en)
*
|
2005-04-29 |
2009-04-07 |
Linde, Inc. |
Method and apparatus for using solution based precursors for atomic layer deposition
|
|
US20060280955A1
(en)
*
|
2005-06-13 |
2006-12-14 |
Irene Spitsberg |
Corrosion resistant sealant for EBC of silicon-containing substrate and processes for preparing same
|
|
US7442444B2
(en)
*
|
2005-06-13 |
2008-10-28 |
General Electric Company |
Bond coat for silicon-containing substrate for EBC and processes for preparing same
|
|
US7354651B2
(en)
*
|
2005-06-13 |
2008-04-08 |
General Electric Company |
Bond coat for corrosion resistant EBC for silicon-containing substrate and processes for preparing same
|
|
US20060280954A1
(en)
*
|
2005-06-13 |
2006-12-14 |
Irene Spitsberg |
Corrosion resistant sealant for outer EBL of silicon-containing substrate and processes for preparing same
|
|
US7651955B2
(en)
*
|
2005-06-21 |
2010-01-26 |
Applied Materials, Inc. |
Method for forming silicon-containing materials during a photoexcitation deposition process
|
|
US7648927B2
(en)
|
2005-06-21 |
2010-01-19 |
Applied Materials, Inc. |
Method for forming silicon-containing materials during a photoexcitation deposition process
|
|
US20060286774A1
(en)
*
|
2005-06-21 |
2006-12-21 |
Applied Materials. Inc. |
Method for forming silicon-containing materials during a photoexcitation deposition process
|
|
US20070049043A1
(en)
*
|
2005-08-23 |
2007-03-01 |
Applied Materials, Inc. |
Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement
|
|
US7402534B2
(en)
*
|
2005-08-26 |
2008-07-22 |
Applied Materials, Inc. |
Pretreatment processes within a batch ALD reactor
|
|
US7521356B2
(en)
*
|
2005-09-01 |
2009-04-21 |
Micron Technology, Inc. |
Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
|
|
US20070054048A1
(en)
*
|
2005-09-07 |
2007-03-08 |
Suvi Haukka |
Extended deposition range by hot spots
|
|
US7495743B2
(en)
*
|
2005-09-30 |
2009-02-24 |
International Business Machines Corporation |
Immersion optical lithography system having protective optical coating
|
|
US7393779B2
(en)
*
|
2005-10-31 |
2008-07-01 |
International Business Machines Corporation |
Shrinking contact apertures through LPD oxide
|
|
US7589028B1
(en)
|
2005-11-15 |
2009-09-15 |
Novellus Systems, Inc. |
Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
|
|
GB2432363B
(en)
*
|
2005-11-16 |
2010-06-23 |
Epichem Ltd |
Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
|
|
US20070139771A1
(en)
*
|
2005-12-15 |
2007-06-21 |
Jian Wang |
Optical retarders and methods of making the same
|
|
US20070165308A1
(en)
*
|
2005-12-15 |
2007-07-19 |
Jian Wang |
Optical retarders and methods of making the same
|
|
US7713584B2
(en)
|
2005-12-22 |
2010-05-11 |
Asm International N.V. |
Process for producing oxide films
|
|
US7491653B1
(en)
|
2005-12-23 |
2009-02-17 |
Novellus Systems, Inc. |
Metal-free catalysts for pulsed deposition layer process for conformal silica laminates
|
|
US7510939B2
(en)
|
2006-01-31 |
2009-03-31 |
International Business Machines Corporation |
Microelectronic structure by selective deposition
|
|
CA2535064A1
(fr)
|
2006-02-01 |
2007-08-01 |
Hydro Quebec |
Materiau multi-couches, procede de fabrication et utilisation comme electrode
|
|
WO2008085183A2
(en)
|
2006-02-07 |
2008-07-17 |
President And Fellows Of Harvard College |
Gas-phase functionalization of carbon nanotubes
|
|
US7964514B2
(en)
*
|
2006-03-02 |
2011-06-21 |
Applied Materials, Inc. |
Multiple nitrogen plasma treatments for thin SiON dielectrics
|
|
EP1994555A4
(en)
|
2006-03-10 |
2009-12-16 |
Advanced Tech Materials |
PRECURSOR COMPOSITIONS FOR STORING ATOMIC LAYERS AND CHEMICAL PREVENTION OF TITANIUM, LANTHANATE AND DIELECTRIC TANTALATE FILMS
|
|
US20070217008A1
(en)
*
|
2006-03-17 |
2007-09-20 |
Wang Jian J |
Polarizer films and methods of making the same
|
|
US7737035B1
(en)
|
2006-03-31 |
2010-06-15 |
Novellus Systems, Inc. |
Dual seal deposition process chamber and process
|
|
US7674337B2
(en)
*
|
2006-04-07 |
2010-03-09 |
Applied Materials, Inc. |
Gas manifolds for use during epitaxial film formation
|
|
US7288463B1
(en)
|
2006-04-28 |
2007-10-30 |
Novellus Systems, Inc. |
Pulsed deposition layer gap fill with expansion material
|
|
US7798096B2
(en)
|
2006-05-05 |
2010-09-21 |
Applied Materials, Inc. |
Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
|
|
CN101505745A
(zh)
|
2006-06-15 |
2009-08-12 |
玛尔斯有限公司 |
改善认知功能的方法和组合物
|
|
US7625820B1
(en)
|
2006-06-21 |
2009-12-01 |
Novellus Systems, Inc. |
Method of selective coverage of high aspect ratio structures with a conformal film
|
|
US8318966B2
(en)
|
2006-06-23 |
2012-11-27 |
Praxair Technology, Inc. |
Organometallic compounds
|
|
US7956168B2
(en)
*
|
2006-07-06 |
2011-06-07 |
Praxair Technology, Inc. |
Organometallic compounds having sterically hindered amides
|
|
US20080032064A1
(en)
*
|
2006-07-10 |
2008-02-07 |
President And Fellows Of Harvard College |
Selective sealing of porous dielectric materials
|
|
KR100780865B1
(ko)
|
2006-07-19 |
2007-11-30 |
삼성전자주식회사 |
상변화막을 포함하는 반도체 소자의 형성 방법
|
|
EP2049705A4
(en)
*
|
2006-07-20 |
2014-10-29 |
Linde Inc |
IMPROVED METHODS FOR DEPOSITION OF ATOMIC LAYERS
|
|
US7795160B2
(en)
|
2006-07-21 |
2010-09-14 |
Asm America Inc. |
ALD of metal silicate films
|
|
CN101496153A
(zh)
*
|
2006-07-31 |
2009-07-29 |
应用材料股份有限公司 |
形成含碳外延硅层的方法
|
|
KR101369355B1
(ko)
*
|
2006-07-31 |
2014-03-04 |
어플라이드 머티어리얼스, 인코포레이티드 |
에피택셜 층 형성 동안에 형태를 제어하는 방법
|
|
US7737047B2
(en)
*
|
2006-08-25 |
2010-06-15 |
Micron Technology, Inc. |
Semiconductor constructions, and methods of forming dielectric materials
|
|
US7956207B2
(en)
*
|
2006-09-28 |
2011-06-07 |
Praxair Technology, Inc. |
Heteroleptic organometallic compounds
|
|
US20080081114A1
(en)
*
|
2006-10-03 |
2008-04-03 |
Novellus Systems, Inc. |
Apparatus and method for delivering uniform fluid flow in a chemical deposition system
|
|
US7749574B2
(en)
|
2006-11-14 |
2010-07-06 |
Applied Materials, Inc. |
Low temperature ALD SiO2
|
|
US7776395B2
(en)
*
|
2006-11-14 |
2010-08-17 |
Applied Materials, Inc. |
Method of depositing catalyst assisted silicates of high-k materials
|
|
KR100852234B1
(ko)
*
|
2006-11-17 |
2008-08-13 |
삼성전자주식회사 |
금속 산화막의 형성 방법, 이를 이용한 게이트 구조물의제조 방법 및 커패시터의 제조 방법
|
|
US8394196B2
(en)
*
|
2006-12-12 |
2013-03-12 |
Applied Materials, Inc. |
Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
|
|
US7960236B2
(en)
*
|
2006-12-12 |
2011-06-14 |
Applied Materials, Inc. |
Phosphorus containing Si epitaxial layers in N-type source/drain junctions
|
|
US7678422B2
(en)
*
|
2006-12-13 |
2010-03-16 |
Air Products And Chemicals, Inc. |
Cyclic chemical vapor deposition of metal-silicon containing films
|
|
JP4353379B2
(ja)
*
|
2006-12-19 |
2009-10-28 |
株式会社トリケミカル研究所 |
膜形成材料、膜形成方法、及び素子
|
|
US7993457B1
(en)
|
2007-01-23 |
2011-08-09 |
Novellus Systems, Inc. |
Deposition sub-chamber with variable flow
|
|
US20080217730A1
(en)
*
|
2007-03-07 |
2008-09-11 |
Toshiharu Furukawa |
Methods of forming gas dielectric and related structure
|
|
US8624050B2
(en)
*
|
2007-06-22 |
2014-01-07 |
General Electric Company |
Solution process for transparent conductive oxide coatings
|
|
US20090035946A1
(en)
*
|
2007-07-31 |
2009-02-05 |
Asm International N.V. |
In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
|
|
TWI471449B
(zh)
|
2007-09-17 |
2015-02-01 |
Air Liquide |
用於ｇｓｔ膜沈積之碲前驅物
|
|
US20090087561A1
(en)
*
|
2007-09-28 |
2009-04-02 |
Advanced Technology Materials, Inc. |
Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
|
|
KR101177983B1
(ko)
*
|
2007-10-11 |
2012-08-29 |
발렌스 프로세스 이큅먼트, 인코포레이티드 |
화학 기상 증착 반응기
|
|
WO2009059237A2
(en)
*
|
2007-10-31 |
2009-05-07 |
Advanced Technology Materials, Inc. |
Novel bismuth precursors for cvd/ald of thin films
|
|
US20090117274A1
(en)
*
|
2007-11-06 |
2009-05-07 |
Ce Ma |
Solution based lanthanum precursors for atomic layer deposition
|
|
US20090130414A1
(en)
*
|
2007-11-08 |
2009-05-21 |
Air Products And Chemicals, Inc. |
Preparation of A Metal-containing Film Via ALD or CVD Processes
|
|
US8501637B2
(en)
*
|
2007-12-21 |
2013-08-06 |
Asm International N.V. |
Silicon dioxide thin films by ALD
|
|
US8016945B2
(en)
*
|
2007-12-21 |
2011-09-13 |
Applied Materials, Inc. |
Hafnium oxide ALD process
|
|
PL2225407T3
(pl)
|
2007-12-28 |
2017-12-29 |
Universitetet I Oslo |
Wytwarzanie struktury zawierającej lit na podłożu sposobem ALD
|
|
US7892968B2
(en)
*
|
2008-01-21 |
2011-02-22 |
International Business Machines Corporation |
Via gouging methods and related semiconductor structure
|
|
CN101959843B
(zh)
|
2008-02-29 |
2014-09-03 |
雅宝公司 |
用于生产氨基过渡金属和亚氨基过渡金属化合物的工艺
|
|
US7816278B2
(en)
*
|
2008-03-28 |
2010-10-19 |
Tokyo Electron Limited |
In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
|
|
US7659158B2
(en)
|
2008-03-31 |
2010-02-09 |
Applied Materials, Inc. |
Atomic layer deposition processes for non-volatile memory devices
|
|
US8383525B2
(en)
*
|
2008-04-25 |
2013-02-26 |
Asm America, Inc. |
Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
|
|
TWI467045B
(zh)
|
2008-05-23 |
2015-01-01 |
Sigma Aldrich Co |
高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法
|
|
WO2010055423A2
(en)
|
2008-05-29 |
2010-05-20 |
L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude |
Tellurium precursors for film deposition
|
|
US8802194B2
(en)
|
2008-05-29 |
2014-08-12 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Tellurium precursors for film deposition
|
|
US8636845B2
(en)
|
2008-06-25 |
2014-01-28 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Metal heterocyclic compounds for deposition of thin films
|
|
WO2010012595A1
(en)
|
2008-08-01 |
2010-02-04 |
L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
Method of forming a tantalum-containing layer on a substrate
|
|
US8236381B2
(en)
|
2008-08-08 |
2012-08-07 |
L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
Metal piperidinate and metal pyridinate precursors for thin film deposition
|
|
US8491967B2
(en)
*
|
2008-09-08 |
2013-07-23 |
Applied Materials, Inc. |
In-situ chamber treatment and deposition process
|
|
US20100062149A1
(en)
|
2008-09-08 |
2010-03-11 |
Applied Materials, Inc. |
Method for tuning a deposition rate during an atomic layer deposition process
|
|
EP2406267B1
(en)
|
2009-03-10 |
2019-02-20 |
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Cyclic amino compounds for low-k silylation
|
|
US9394608B2
(en)
|
2009-04-06 |
2016-07-19 |
Asm America, Inc. |
Semiconductor processing reactor and components thereof
|
|
FI20095630A0
(fi)
|
2009-06-05 |
2009-06-05 |
Beneq Oy |
Suojapinnoitus, menetelmä alustan suojaamiseksi ja menetelmän käyttö
|
|
EP2451819A4
(en)
*
|
2009-07-06 |
2013-03-06 |
Linde Ag |
SOLUTION-BASED PRECURSORS
|
|
JP5507909B2
(ja)
*
|
2009-07-14 |
2014-05-28 |
東京エレクトロン株式会社 |
成膜方法
|
|
US8802201B2
(en)
|
2009-08-14 |
2014-08-12 |
Asm America, Inc. |
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
|
|
JP2013503849A
(ja)
|
2009-09-02 |
2013-02-04 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム（ｉｉ）先駆物質
|
|
US8765220B2
(en)
*
|
2009-11-09 |
2014-07-01 |
American Air Liquide, Inc. |
Methods of making and deposition methods using hafnium- or zirconium-containing compounds
|
|
FI20096262A0
(fi)
|
2009-11-30 |
2009-11-30 |
Beneq Oy |
Menetelmä koristepinnoitteen muodostamiseksi jalokiveen, jalokiven koristepinnoite, ja sen käytöt
|
|
KR20120123126A
(ko)
|
2010-02-03 |
2012-11-07 |
레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 |
박막 증착용 칼코게나이드-함유 전구체, 그의 제조 방법 및 사용 방법
|
|
EP2563890A1
(en)
|
2010-04-30 |
2013-03-06 |
Battelle Memorial Institute |
Composition for easy to clean surfaces
|
|
US9373677B2
(en)
|
2010-07-07 |
2016-06-21 |
Entegris, Inc. |
Doping of ZrO2 for DRAM applications
|
|
EP2444407A1
(en)
|
2010-10-07 |
2012-04-25 |
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Metal compounds for deposition of chalcogenide films at low temperature
|
|
EP2444405A1
(en)
|
2010-10-07 |
2012-04-25 |
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Metal compounds for deposition of chalcogenide films at low temperature
|
|
EP2444406A1
(en)
|
2010-10-07 |
2012-04-25 |
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Metal compounds for deposition of chalcogenide films at low temperature
|
|
EP2444404A1
(en)
|
2010-10-07 |
2012-04-25 |
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Metal compounds for deposition of chalcogenide films at low temperature
|
|
KR101274522B1
(ko)
*
|
2010-11-30 |
2013-06-13 |
한양대학교 산학협력단 |
탄소나노튜브 3차원 네트워크를 이용한 미세유체 필터 및 그 제조 방법
|
|
FR2968677A1
(fr)
*
|
2010-12-09 |
2012-06-15 |
Commissariat Energie Atomique |
Procédé de fabrication de couches a base de lithium par cvd
|
|
US8946096B2
(en)
*
|
2011-03-15 |
2015-02-03 |
Mecharonics Co. Ltd. |
Group IV-B organometallic compound, and method for preparing same
|
|
US9315894B2
(en)
|
2011-03-30 |
2016-04-19 |
Asm Ip Holding B.V. |
Atomic layer deposition of metal phosphates and lithium silicates
|
|
WO2013011297A1
(en)
*
|
2011-07-15 |
2013-01-24 |
Universitetet I Oslo |
Method
|
|
US20130023129A1
(en)
|
2011-07-20 |
2013-01-24 |
Asm America, Inc. |
Pressure transmitter for a semiconductor processing environment
|
|
US20130022658A1
(en)
*
|
2011-07-23 |
2013-01-24 |
Synos Technology, Inc. |
Depositing material with antimicrobial properties on permeable substrate using atomic layer deposition
|
|
KR20140085461A
(ko)
|
2011-09-27 |
2014-07-07 |
레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 |
니켈 비스 디아자부타디엔 전구체, 그들의 합성, 및 니켈 함유 필름 침착을 위한 그들의 용도
|
|
US9017481B1
(en)
|
2011-10-28 |
2015-04-28 |
Asm America, Inc. |
Process feed management for semiconductor substrate processing
|
|
US20140311574A1
(en)
*
|
2011-11-21 |
2014-10-23 |
President And Fellows Of Harvard College |
Self-Aligned Deposition of Silica Layers for Dye-Sensitized Solar Cells
|
|
US8901706B2
(en)
|
2012-01-06 |
2014-12-02 |
International Business Machines Corporation |
Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
|
|
US9048294B2
(en)
*
|
2012-04-13 |
2015-06-02 |
Applied Materials, Inc. |
Methods for depositing manganese and manganese nitrides
|
|
WO2013177326A1
(en)
|
2012-05-25 |
2013-11-28 |
Advanced Technology Materials, Inc. |
Silicon precursors for low temperature ald of silicon-based thin-films
|
|
US10714315B2
(en)
|
2012-10-12 |
2020-07-14 |
Asm Ip Holdings B.V. |
Semiconductor reaction chamber showerhead
|
|
US20160376700A1
(en)
|
2013-02-01 |
2016-12-29 |
Asm Ip Holding B.V. |
System for treatment of deposition reactor
|
|
US10186570B2
(en)
|
2013-02-08 |
2019-01-22 |
Entegris, Inc. |
ALD processes for low leakage current and low equivalent oxide thickness BiTaO films
|
|
KR101701257B1
(ko)
*
|
2013-03-14 |
2017-02-01 |
어플라이드 머티어리얼스, 인코포레이티드 |
박막 캡슐화 ― ｏｌｅｄ 어플리케이션을 위한 얇은 초고 배리어 층
|
|
US9353439B2
(en)
|
2013-04-05 |
2016-05-31 |
Lam Research Corporation |
Cascade design showerhead for transient uniformity
|
|
KR20160036661A
(ko)
*
|
2013-07-26 |
2016-04-04 |
프레지던트 앤드 펠로우즈 오브 하바드 칼리지 |
환식 아민의 금속 아미드
|
|
US10554624B2
(en)
*
|
2013-09-25 |
2020-02-04 |
Mcafee, Llc |
Proxy authentication for single sign-on
|
|
WO2015056944A1
(ko)
*
|
2013-10-14 |
2015-04-23 |
한국화학연구원 |
몰리브데넘 화합물 또는 텅스텐 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법
|
|
US9518075B2
(en)
|
2013-12-13 |
2016-12-13 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Group 5 cyclopentadienyl transition metal-containing precursors for deposition of group 5 transition metal-containing films
|
|
US11286557B2
(en)
*
|
2014-01-24 |
2022-03-29 |
Commissariat A L'energie Atomique Et Aux Engergies Alternatives |
Method of forming a crystalline thin film having the formula MY2 using an ALD-formed amorphous thin film having the formula MYx as a precursor
|
|
US11015245B2
(en)
|
2014-03-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Gas-phase reactor and system having exhaust plenum and components thereof
|
|
US11121334B2
(en)
*
|
2014-06-26 |
2021-09-14 |
Trustees Of Tufts College |
3D graphene transistor
|
|
US10858737B2
(en)
|
2014-07-28 |
2020-12-08 |
Asm Ip Holding B.V. |
Showerhead assembly and components thereof
|
|
US9890456B2
(en)
|
2014-08-21 |
2018-02-13 |
Asm Ip Holding B.V. |
Method and system for in situ formation of gas-phase compounds
|
|
KR101590720B1
(ko)
*
|
2014-08-25 |
2016-02-03 |
고려대학교 산학협력단 |
원자층 증착 공정을 이용한 금속 인산화물 박막의 형성 방법
|
|
US10941490B2
(en)
|
2014-10-07 |
2021-03-09 |
Asm Ip Holding B.V. |
Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
|
|
JP5913663B2
(ja)
*
|
2015-02-19 |
2016-04-27 |
株式会社Adeka |
モリブデンアミド化合物
|
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
|
US10763103B2
(en)
*
|
2015-03-31 |
2020-09-01 |
Versum Materials Us, Llc |
Boron-containing compounds, compositions, and methods for the deposition of a boron containing films
|
|
US10023959B2
(en)
|
2015-05-26 |
2018-07-17 |
Lam Research Corporation |
Anti-transient showerhead
|
|
US10458018B2
(en)
|
2015-06-26 |
2019-10-29 |
Asm Ip Holding B.V. |
Structures including metal carbide material, devices including the structures, and methods of forming same
|
|
DE102015217809A1
(de)
*
|
2015-09-17 |
2017-03-23 |
Robert Bosch Gmbh |
Vorlithiiertes, kohlenstoffbeschichtetes Anodenaktivmaterial
|
|
TWI740848B
(zh)
*
|
2015-10-16 |
2021-10-01 |
荷蘭商Ａｓｍ智慧財產控股公司 |
實施原子層沉積以得閘極介電質
|
|
US10211308B2
(en)
|
2015-10-21 |
2019-02-19 |
Asm Ip Holding B.V. |
NbMC layers
|
|
WO2017093265A1
(en)
*
|
2015-11-30 |
2017-06-08 |
Basf Se |
Process for the generation of metallic films
|
|
IL259109B2
(en)
|
2015-11-30 |
2023-04-01 |
Basf Se |
A process for creating metallic layers
|
|
US11139308B2
(en)
|
2015-12-29 |
2021-10-05 |
Asm Ip Holding B.V. |
Atomic layer deposition of III-V compounds to form V-NAND devices
|
|
US9738971B2
(en)
|
2015-12-31 |
2017-08-22 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Vapor deposition methods to form group 8-containing films
|
|
US10011903B2
(en)
|
2015-12-31 |
2018-07-03 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Manganese-containing film forming compositions, their synthesis, and use in film deposition
|
|
GB201523156D0
(en)
|
2015-12-31 |
2016-02-17 |
Pilkington Group Ltd |
High strength glass containers
|
|
US9719167B2
(en)
|
2015-12-31 |
2017-08-01 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Cobalt-containing film forming compositions, their synthesis, and use in film deposition
|
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
|
US10343920B2
(en)
|
2016-03-18 |
2019-07-09 |
Asm Ip Holding B.V. |
Aligned carbon nanotubes
|
|
US10190213B2
(en)
|
2016-04-21 |
2019-01-29 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
|
US10865475B2
(en)
|
2016-04-21 |
2020-12-15 |
Asm Ip Holding B.V. |
Deposition of metal borides and silicides
|
|
US10651080B2
(en)
|
2016-04-26 |
2020-05-12 |
Lam Research Corporation |
Oxidizing treatment of aluminum nitride films in semiconductor device manufacturing
|
|
US10367080B2
(en)
|
2016-05-02 |
2019-07-30 |
Asm Ip Holding B.V. |
Method of forming a germanium oxynitride film
|
|
JP6548086B2
(ja)
*
|
2016-05-17 |
2019-07-24 |
株式会社フィルテック |
膜形成方法
|
|
US11453943B2
(en)
|
2016-05-25 |
2022-09-27 |
Asm Ip Holding B.V. |
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
|
|
US9859151B1
(en)
|
2016-07-08 |
2018-01-02 |
Asm Ip Holding B.V. |
Selective film deposition method to form air gaps
|
|
US10612137B2
(en)
|
2016-07-08 |
2020-04-07 |
Asm Ip Holdings B.V. |
Organic reactants for atomic layer deposition
|
|
US10714385B2
(en)
|
2016-07-19 |
2020-07-14 |
Asm Ip Holding B.V. |
Selective deposition of tungsten
|
|
KR102532607B1
(ko)
|
2016-07-28 |
2023-05-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 가공 장치 및 그 동작 방법
|
|
US9887082B1
(en)
|
2016-07-28 |
2018-02-06 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
|
US9812320B1
(en)
|
2016-07-28 |
2017-11-07 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
|
US10049869B2
(en)
*
|
2016-09-30 |
2018-08-14 |
Lam Research Corporation |
Composite dielectric interface layers for interconnect structures
|
|
US10643826B2
(en)
|
2016-10-26 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for thermally calibrating reaction chambers
|
|
US11532757B2
(en)
|
2016-10-27 |
2022-12-20 |
Asm Ip Holding B.V. |
Deposition of charge trapping layers
|
|
US10229833B2
(en)
|
2016-11-01 |
2019-03-12 |
Asm Ip Holding B.V. |
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
|
US10714350B2
(en)
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
|
US9859153B1
(en)
|
2016-11-14 |
2018-01-02 |
Lam Research Corporation |
Deposition of aluminum oxide etch stop layers
|
|
KR102546317B1
(ko)
|
2016-11-15 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기체 공급 유닛 및 이를 포함하는 기판 처리 장치
|
|
KR102762543B1
(ko)
|
2016-12-14 |
2025-02-05 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US11447861B2
(en)
|
2016-12-15 |
2022-09-20 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
|
|
US11581186B2
(en)
|
2016-12-15 |
2023-02-14 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus
|
|
KR102700194B1
(ko)
|
2016-12-19 |
2024-08-28 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US10269558B2
(en)
|
2016-12-22 |
2019-04-23 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
|
US10867788B2
(en)
|
2016-12-28 |
2020-12-15 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
|
US11390950B2
(en)
|
2017-01-10 |
2022-07-19 |
Asm Ip Holding B.V. |
Reactor system and method to reduce residue buildup during a film deposition process
|
|
US10468261B2
(en)
|
2017-02-15 |
2019-11-05 |
Asm Ip Holding B.V. |
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
|
|
US10043656B1
(en)
*
|
2017-03-10 |
2018-08-07 |
Lam Research Corporation |
Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
|
|
JP6813661B2
(ja)
*
|
2017-03-15 |
2021-01-13 |
キヤノンオプトロン株式会社 |
親水性蒸着膜及び蒸着材料
|
|
US10529563B2
(en)
|
2017-03-29 |
2020-01-07 |
Asm Ip Holdings B.V. |
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
|
|
JP7113651B2
(ja)
|
2017-04-11 |
2022-08-05 |
東京エレクトロン株式会社 |
逆行的なプロファイルを有する凹状フィーチャのボイドのない充填方法
|
|
KR102457289B1
(ko)
|
2017-04-25 |
2022-10-21 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
|
AU2018261007B2
(en)
|
2017-05-05 |
2024-09-26 |
Quantum-Si Incorporated |
Substrates having modified surface reactivity and antifouling properties in biological reactions
|
|
US10892156B2
(en)
|
2017-05-08 |
2021-01-12 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
|
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
|
US10886123B2
(en)
|
2017-06-02 |
2021-01-05 |
Asm Ip Holding B.V. |
Methods for forming low temperature semiconductor layers and related semiconductor device structures
|
|
US12040200B2
(en)
|
2017-06-20 |
2024-07-16 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
|
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
|
US10283417B1
(en)
*
|
2017-06-30 |
2019-05-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Self-protective layer formed on high-k dielectric layers with different materials
|
|
US11114347B2
(en)
|
2017-06-30 |
2021-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Self-protective layer formed on high-k dielectric layers with different materials
|
|
US10685834B2
(en)
|
2017-07-05 |
2020-06-16 |
Asm Ip Holdings B.V. |
Methods for forming a silicon germanium tin layer and related semiconductor device structures
|
|
KR20190009245A
(ko)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
|
|
US10541333B2
(en)
|
2017-07-19 |
2020-01-21 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
|
US11374112B2
(en)
|
2017-07-19 |
2022-06-28 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
|
US11018002B2
(en)
|
2017-07-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
|
|
JP7548815B2
(ja)
*
|
2017-07-20 |
2024-09-10 |
ミル スマート テクノロジーズ コーポレーション |
エレクトロクロミック装置のための金属酸化物の光分解
|
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
|
TWI815813B
(zh)
|
2017-08-04 |
2023-09-21 |
荷蘭商Ａｓｍ智慧財產控股公司 |
用於分配反應腔內氣體的噴頭總成
|
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
|
US11139191B2
(en)
|
2017-08-09 |
2021-10-05 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
|
US11769682B2
(en)
|
2017-08-09 |
2023-09-26 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
|
KR102491945B1
(ko)
|
2017-08-30 |
2023-01-26 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US11056344B2
(en)
|
2017-08-30 |
2021-07-06 |
Asm Ip Holding B.V. |
Layer forming method
|
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
|
KR102401446B1
(ko)
|
2017-08-31 |
2022-05-24 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
KR102630301B1
(ko)
|
2017-09-21 |
2024-01-29 |
에이에스엠 아이피 홀딩 비.브이. |
침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
|
|
US10844484B2
(en)
|
2017-09-22 |
2020-11-24 |
Asm Ip Holding B.V. |
Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
|
US10403504B2
(en)
|
2017-10-05 |
2019-09-03 |
Asm Ip Holding B.V. |
Method for selectively depositing a metallic film on a substrate
|
|
US10319588B2
(en)
|
2017-10-10 |
2019-06-11 |
Asm Ip Holding B.V. |
Method for depositing a metal chalcogenide on a substrate by cyclical deposition
|
|
US10923344B2
(en)
|
2017-10-30 |
2021-02-16 |
Asm Ip Holding B.V. |
Methods for forming a semiconductor structure and related semiconductor structures
|
|
US10910262B2
(en)
|
2017-11-16 |
2021-02-02 |
Asm Ip Holding B.V. |
Method of selectively depositing a capping layer structure on a semiconductor device structure
|
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
|
US11127617B2
(en)
|
2017-11-27 |
2021-09-21 |
Asm Ip Holding B.V. |
Storage device for storing wafer cassettes for use with a batch furnace
|
|
TWI791689B
(zh)
|
2017-11-27 |
2023-02-11 |
荷蘭商Ａｓｍ智慧財產控股私人有限公司 |
包括潔淨迷你環境之裝置
|
|
US10872771B2
(en)
|
2018-01-16 |
2020-12-22 |
Asm Ip Holding B. V. |
Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
|
|
KR102695659B1
(ko)
|
2018-01-19 |
2024-08-14 |
에이에스엠 아이피 홀딩 비.브이. |
플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
|
|
TWI852426B
(zh)
|
2018-01-19 |
2024-08-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
沈積方法
|
|
US11018047B2
(en)
|
2018-01-25 |
2021-05-25 |
Asm Ip Holding B.V. |
Hybrid lift pin
|
|
USD880437S1
(en)
|
2018-02-01 |
2020-04-07 |
Asm Ip Holding B.V. |
Gas supply plate for semiconductor manufacturing apparatus
|
|
US11081345B2
(en)
|
2018-02-06 |
2021-08-03 |
Asm Ip Holding B.V. |
Method of post-deposition treatment for silicon oxide film
|
|
US10896820B2
(en)
|
2018-02-14 |
2021-01-19 |
Asm Ip Holding B.V. |
Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
|
KR102657269B1
(ko)
|
2018-02-14 |
2024-04-16 |
에이에스엠 아이피 홀딩 비.브이. |
주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법
|
|
US10731249B2
(en)
|
2018-02-15 |
2020-08-04 |
Asm Ip Holding B.V. |
Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
|
|
KR102636427B1
(ko)
|
2018-02-20 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 장치
|
|
US10975470B2
(en)
|
2018-02-23 |
2021-04-13 |
Asm Ip Holding B.V. |
Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
|
|
US11473195B2
(en)
|
2018-03-01 |
2022-10-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and a method for processing a substrate
|
|
US11629406B2
(en)
|
2018-03-09 |
2023-04-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
|
|
US11114283B2
(en)
|
2018-03-16 |
2021-09-07 |
Asm Ip Holding B.V. |
Reactor, system including the reactor, and methods of manufacturing and using same
|
|
KR102646467B1
(ko)
|
2018-03-27 |
2024-03-11 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
|
|
US11230766B2
(en)
|
2018-03-29 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
|
US11088002B2
(en)
|
2018-03-29 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate rack and a substrate processing system and method
|
|
KR102501472B1
(ko)
|
2018-03-30 |
2023-02-20 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
|
US10443126B1
(en)
|
2018-04-06 |
2019-10-15 |
Applied Materials, Inc. |
Zone-controlled rare-earth oxide ALD and CVD coatings
|
|
KR102600229B1
(ko)
|
2018-04-09 |
2023-11-10 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
|
|
KR102709511B1
(ko)
|
2018-05-08 |
2024-09-24 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
|
|
US12025484B2
(en)
|
2018-05-08 |
2024-07-02 |
Asm Ip Holding B.V. |
Thin film forming method
|
|
US12272527B2
(en)
|
2018-05-09 |
2025-04-08 |
Asm Ip Holding B.V. |
Apparatus for use with hydrogen radicals and method of using same
|
|
TWI879056B
(zh)
|
2018-05-11 |
2025-04-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
|
|
KR102596988B1
(ko)
|
2018-05-28 |
2023-10-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 그에 의해 제조된 장치
|
|
TWI840362B
(zh)
|
2018-06-04 |
2024-05-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
水氣降低的晶圓處置腔室
|
|
US11718913B2
(en)
|
2018-06-04 |
2023-08-08 |
Asm Ip Holding B.V. |
Gas distribution system and reactor system including same
|
|
US11286562B2
(en)
|
2018-06-08 |
2022-03-29 |
Asm Ip Holding B.V. |
Gas-phase chemical reactor and method of using same
|
|
US11401599B2
(en)
|
2018-06-18 |
2022-08-02 |
Applied Materials, Inc. |
Erosion resistant metal silicate coatings
|
|
US10797133B2
(en)
|
2018-06-21 |
2020-10-06 |
Asm Ip Holding B.V. |
Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
|
|
KR102568797B1
(ko)
|
2018-06-21 |
2023-08-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 시스템
|
|
TWI819010B
(zh)
|
2018-06-27 |
2023-10-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
|
|
WO2020003000A1
(en)
|
2018-06-27 |
2020-01-02 |
Asm Ip Holding B.V. |
Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
|
|
US10612136B2
(en)
|
2018-06-29 |
2020-04-07 |
ASM IP Holding, B.V. |
Temperature-controlled flange and reactor system including same
|
|
KR102686758B1
(ko)
|
2018-06-29 |
2024-07-18 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
|
US10388513B1
(en)
|
2018-07-03 |
2019-08-20 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
|
US10755922B2
(en)
|
2018-07-03 |
2020-08-25 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
|
US10767789B2
(en)
|
2018-07-16 |
2020-09-08 |
Asm Ip Holding B.V. |
Diaphragm valves, valve components, and methods for forming valve components
|
|
CN112513053B
(zh)
*
|
2018-07-30 |
2024-02-23 |
Up化学株式会社 |
铝化合物和使用该铝化合物形成含铝膜的方法
|
|
US11053591B2
(en)
|
2018-08-06 |
2021-07-06 |
Asm Ip Holding B.V. |
Multi-port gas injection system and reactor system including same
|
|
US10883175B2
(en)
|
2018-08-09 |
2021-01-05 |
Asm Ip Holding B.V. |
Vertical furnace for processing substrates and a liner for use therein
|
|
US10829852B2
(en)
|
2018-08-16 |
2020-11-10 |
Asm Ip Holding B.V. |
Gas distribution device for a wafer processing apparatus
|
|
US11430674B2
(en)
|
2018-08-22 |
2022-08-30 |
Asm Ip Holding B.V. |
Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
|
US11024523B2
(en)
|
2018-09-11 |
2021-06-01 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
|
KR102707956B1
(ko)
|
2018-09-11 |
2024-09-19 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법
|
|
US11049751B2
(en)
|
2018-09-14 |
2021-06-29 |
Asm Ip Holding B.V. |
Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
|
|
CN110970344B
(zh)
|
2018-10-01 |
2024-10-25 |
Asmip控股有限公司 |
衬底保持设备、包含所述设备的系统及其使用方法
|
|
JP2020056104A
(ja)
|
2018-10-02 |
2020-04-09 |
エーエスエム アイピー ホールディング ビー．ブイ． |
選択的パッシベーションおよび選択的堆積
|
|
US12482648B2
(en)
|
2018-10-02 |
2025-11-25 |
Asm Ip Holding B.V. |
Selective passivation and selective deposition
|
|
US11232963B2
(en)
|
2018-10-03 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
|
KR102592699B1
(ko)
|
2018-10-08 |
2023-10-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
|
|
US10847365B2
(en)
|
2018-10-11 |
2020-11-24 |
Asm Ip Holding B.V. |
Method of forming conformal silicon carbide film by cyclic CVD
|
|
US10811256B2
(en)
|
2018-10-16 |
2020-10-20 |
Asm Ip Holding B.V. |
Method for etching a carbon-containing feature
|
|
KR102605121B1
(ko)
|
2018-10-19 |
2023-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
|
KR102546322B1
(ko)
|
2018-10-19 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
|
USD948463S1
(en)
|
2018-10-24 |
2022-04-12 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate supporting apparatus
|
|
US12378665B2
(en)
|
2018-10-26 |
2025-08-05 |
Asm Ip Holding B.V. |
High temperature coatings for a preclean and etch apparatus and related methods
|
|
US11087997B2
(en)
|
2018-10-31 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
|
KR102748291B1
(ko)
|
2018-11-02 |
2024-12-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 기판 처리 장치
|
|
US11572620B2
(en)
|
2018-11-06 |
2023-02-07 |
Asm Ip Holding B.V. |
Methods for selectively depositing an amorphous silicon film on a substrate
|
|
US11031242B2
(en)
|
2018-11-07 |
2021-06-08 |
Asm Ip Holding B.V. |
Methods for depositing a boron doped silicon germanium film
|
|
US10818758B2
(en)
|
2018-11-16 |
2020-10-27 |
Asm Ip Holding B.V. |
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
|
|
US10847366B2
(en)
|
2018-11-16 |
2020-11-24 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
|
|
US12040199B2
(en)
|
2018-11-28 |
2024-07-16 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
|
US11217444B2
(en)
|
2018-11-30 |
2022-01-04 |
Asm Ip Holding B.V. |
Method for forming an ultraviolet radiation responsive metal oxide-containing film
|
|
KR102636428B1
(ko)
|
2018-12-04 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치를 세정하는 방법
|
|
US11158513B2
(en)
|
2018-12-13 |
2021-10-26 |
Asm Ip Holding B.V. |
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
|
|
TWI874340B
(zh)
|
2018-12-14 |
2025-03-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成裝置結構之方法、其所形成之結構及施行其之系統
|
|
TWI866480B
(zh)
|
2019-01-17 |
2024-12-11 |
荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 |
藉由循環沈積製程於基板上形成含過渡金屬膜之方法
|
|
KR102727227B1
(ko)
|
2019-01-22 |
2024-11-07 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
CN111524788B
(zh)
|
2019-02-01 |
2023-11-24 |
Asm Ip私人控股有限公司 |
氧化硅的拓扑选择性膜形成的方法
|
|
JP7153094B2
(ja)
|
2019-02-06 |
2022-10-13 |
レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
化合物及びリチウム含有膜の製造方法
|
|
KR20200102357A
(ko)
|
2019-02-20 |
2020-08-31 |
에이에스엠 아이피 홀딩 비.브이. |
3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
|
|
JP7509548B2
(ja)
|
2019-02-20 |
2024-07-02 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
基材表面内に形成された凹部を充填するための周期的堆積方法および装置
|
|
KR102638425B1
(ko)
|
2019-02-20 |
2024-02-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
|
|
KR102626263B1
(ko)
|
2019-02-20 |
2024-01-16 |
에이에스엠 아이피 홀딩 비.브이. |
처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
|
|
TWI842826B
(zh)
|
2019-02-22 |
2024-05-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基材處理設備及處理基材之方法
|
|
KR102858005B1
(ko)
|
2019-03-08 |
2025-09-09 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
|
|
US11742198B2
(en)
|
2019-03-08 |
2023-08-29 |
Asm Ip Holding B.V. |
Structure including SiOCN layer and method of forming same
|
|
KR102782593B1
(ko)
|
2019-03-08 |
2025-03-14 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 층을 포함한 구조체 및 이의 형성 방법
|
|
JP2020167398A
(ja)
|
2019-03-28 |
2020-10-08 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
ドアオープナーおよびドアオープナーが提供される基材処理装置
|
|
KR102809999B1
(ko)
|
2019-04-01 |
2025-05-19 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자를 제조하는 방법
|
|
US11447864B2
(en)
|
2019-04-19 |
2022-09-20 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
|
KR20200125453A
(ko)
|
2019-04-24 |
2020-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
기상 반응기 시스템 및 이를 사용하는 방법
|
|
KR20200130121A
(ko)
|
2019-05-07 |
2020-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
딥 튜브가 있는 화학물질 공급원 용기
|
|
KR102869364B1
(ko)
|
2019-05-07 |
2025-10-10 |
에이에스엠 아이피 홀딩 비.브이. |
비정질 탄소 중합체 막을 개질하는 방법
|
|
KR20200130652A
(ko)
|
2019-05-10 |
2020-11-19 |
에이에스엠 아이피 홀딩 비.브이. |
표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
|
|
JP7598201B2
(ja)
|
2019-05-16 |
2024-12-11 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
ウェハボートハンドリング装置、縦型バッチ炉および方法
|
|
JP7612342B2
(ja)
|
2019-05-16 |
2025-01-14 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
ウェハボートハンドリング装置、縦型バッチ炉および方法
|
|
USD947913S1
(en)
|
2019-05-17 |
2022-04-05 |
Asm Ip Holding B.V. |
Susceptor shaft
|
|
USD975665S1
(en)
|
2019-05-17 |
2023-01-17 |
Asm Ip Holding B.V. |
Susceptor shaft
|
|
USD935572S1
(en)
|
2019-05-24 |
2021-11-09 |
Asm Ip Holding B.V. |
Gas channel plate
|
|
US11773488B2
(en)
*
|
2019-05-30 |
2023-10-03 |
Uchicago Argonne, Llc |
Methods for low-temperature p-CVD and thermal ALD of magnesium diboride
|
|
USD922229S1
(en)
|
2019-06-05 |
2021-06-15 |
Asm Ip Holding B.V. |
Device for controlling a temperature of a gas supply unit
|
|
KR20200141003A
(ko)
|
2019-06-06 |
2020-12-17 |
에이에스엠 아이피 홀딩 비.브이. |
가스 감지기를 포함하는 기상 반응기 시스템
|
|
KR20200141931A
(ko)
|
2019-06-10 |
2020-12-21 |
에이에스엠 아이피 홀딩 비.브이. |
석영 에피택셜 챔버를 세정하는 방법
|
|
KR20200143254A
(ko)
|
2019-06-11 |
2020-12-23 |
에이에스엠 아이피 홀딩 비.브이. |
개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
|
|
USD944946S1
(en)
|
2019-06-14 |
2022-03-01 |
Asm Ip Holding B.V. |
Shower plate
|
|
USD931978S1
(en)
|
2019-06-27 |
2021-09-28 |
Asm Ip Holding B.V. |
Showerhead vacuum transport
|
|
KR20210005515A
(ko)
|
2019-07-03 |
2021-01-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
|
|
JP7499079B2
(ja)
|
2019-07-09 |
2024-06-13 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
同軸導波管を用いたプラズマ装置、基板処理方法
|
|
CN112216646A
(zh)
|
2019-07-10 |
2021-01-12 |
Asm Ip私人控股有限公司 |
基板支撑组件及包括其的基板处理装置
|
|
KR102895115B1
(ko)
|
2019-07-16 |
2025-12-03 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
KR20210010816A
(ko)
|
2019-07-17 |
2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
라디칼 보조 점화 플라즈마 시스템 및 방법
|
|
KR102860110B1
(ko)
|
2019-07-17 |
2025-09-16 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 게르마늄 구조를 형성하는 방법
|
|
US11643724B2
(en)
|
2019-07-18 |
2023-05-09 |
Asm Ip Holding B.V. |
Method of forming structures using a neutral beam
|
|
TWI839544B
(zh)
|
2019-07-19 |
2024-04-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成形貌受控的非晶碳聚合物膜之方法
|
|
CN112242295B
(zh)
|
2019-07-19 |
2025-12-09 |
Asmip私人控股有限公司 |
形成拓扑受控的无定形碳聚合物膜的方法
|
|
TWI851767B
(zh)
|
2019-07-29 |
2024-08-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
|
|
CN112309900B
(zh)
|
2019-07-30 |
2025-11-04 |
Asmip私人控股有限公司 |
基板处理设备
|
|
KR20210015655A
(ko)
|
2019-07-30 |
2021-02-10 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 방법
|
|
CN112309899B
(zh)
|
2019-07-30 |
2025-11-14 |
Asmip私人控股有限公司 |
基板处理设备
|
|
US11587815B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
|
US11587814B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
|
US11227782B2
(en)
|
2019-07-31 |
2022-01-18 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
|
CN118422165A
(zh)
|
2019-08-05 |
2024-08-02 |
Asm Ip私人控股有限公司 |
用于化学源容器的液位传感器
|
|
KR20210018761A
(ko)
|
2019-08-09 |
2021-02-18 |
에이에스엠 아이피 홀딩 비.브이. |
냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법
|
|
USD965524S1
(en)
|
2019-08-19 |
2022-10-04 |
Asm Ip Holding B.V. |
Susceptor support
|
|
USD965044S1
(en)
|
2019-08-19 |
2022-09-27 |
Asm Ip Holding B.V. |
Susceptor shaft
|
|
JP2021031769A
(ja)
|
2019-08-21 |
2021-03-01 |
エーエスエム アイピー ホールディング ビー．ブイ． |
成膜原料混合ガス生成装置及び成膜装置
|
|
USD930782S1
(en)
|
2019-08-22 |
2021-09-14 |
Asm Ip Holding B.V. |
Gas distributor
|
|
USD979506S1
(en)
|
2019-08-22 |
2023-02-28 |
Asm Ip Holding B.V. |
Insulator
|
|
KR20210024423A
(ko)
|
2019-08-22 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
홀을 구비한 구조체를 형성하기 위한 방법
|
|
USD940837S1
(en)
|
2019-08-22 |
2022-01-11 |
Asm Ip Holding B.V. |
Electrode
|
|
USD949319S1
(en)
|
2019-08-22 |
2022-04-19 |
Asm Ip Holding B.V. |
Exhaust duct
|
|
KR20210024420A
(ko)
|
2019-08-23 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
|
|
US11286558B2
(en)
|
2019-08-23 |
2022-03-29 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
|
|
KR102806450B1
(ko)
|
2019-09-04 |
2025-05-12 |
에이에스엠 아이피 홀딩 비.브이. |
희생 캡핑 층을 이용한 선택적 증착 방법
|
|
KR102733104B1
(ko)
|
2019-09-05 |
2024-11-22 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US12469693B2
(en)
|
2019-09-17 |
2025-11-11 |
Asm Ip Holding B.V. |
Method of forming a carbon-containing layer and structure including the layer
|
|
US11562901B2
(en)
|
2019-09-25 |
2023-01-24 |
Asm Ip Holding B.V. |
Substrate processing method
|
|
CN112593212B
(zh)
|
2019-10-02 |
2023-12-22 |
Asm Ip私人控股有限公司 |
通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
|
|
TW202128273A
(zh)
|
2019-10-08 |
2021-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
|
|
TWI846953B
(zh)
|
2019-10-08 |
2024-07-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理裝置
|
|
TWI862702B
(zh)
|
2019-10-08 |
2024-11-21 |
法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 |
用於沉積含鋰層、島或簇的鋰前驅體及使用彼之方法
|
|
KR20210042810A
(ko)
|
2019-10-08 |
2021-04-20 |
에이에스엠 아이피 홀딩 비.브이. |
활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
|
|
KR102879443B1
(ko)
|
2019-10-10 |
2025-11-03 |
에이에스엠 아이피 홀딩 비.브이. |
포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
|
|
AU2020364058A1
(en)
*
|
2019-10-11 |
2022-05-26 |
Quantum-Si Incorporated |
Surface modification in the vapor phase
|
|
US12009241B2
(en)
|
2019-10-14 |
2024-06-11 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly with detector to detect cassette
|
|
TWI834919B
(zh)
|
2019-10-16 |
2024-03-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
氧化矽之拓撲選擇性膜形成之方法
|
|
US11637014B2
(en)
|
2019-10-17 |
2023-04-25 |
Asm Ip Holding B.V. |
Methods for selective deposition of doped semiconductor material
|
|
KR102845724B1
(ko)
|
2019-10-21 |
2025-08-13 |
에이에스엠 아이피 홀딩 비.브이. |
막을 선택적으로 에칭하기 위한 장치 및 방법
|
|
KR20210050453A
(ko)
|
2019-10-25 |
2021-05-07 |
에이에스엠 아이피 홀딩 비.브이. |
기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
|
|
US11646205B2
(en)
|
2019-10-29 |
2023-05-09 |
Asm Ip Holding B.V. |
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
|
|
KR102890638B1
(ko)
|
2019-11-05 |
2025-11-25 |
에이에스엠 아이피 홀딩 비.브이. |
도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
|
|
US11501968B2
(en)
|
2019-11-15 |
2022-11-15 |
Asm Ip Holding B.V. |
Method for providing a semiconductor device with silicon filled gaps
|
|
CN110922897B
(zh)
*
|
2019-11-18 |
2024-03-08 |
宁波日晟新材料有限公司 |
一种用于硅化合物的低雾值无损伤抛光液及其制备方法
|
|
KR102861314B1
(ko)
|
2019-11-20 |
2025-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
|
|
KR20210065848A
(ko)
|
2019-11-26 |
2021-06-04 |
에이에스엠 아이피 홀딩 비.브이. |
제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
|
|
CN112951697B
(zh)
|
2019-11-26 |
2025-07-29 |
Asmip私人控股有限公司 |
基板处理设备
|
|
CN112885692B
(zh)
|
2019-11-29 |
2025-08-15 |
Asmip私人控股有限公司 |
基板处理设备
|
|
CN120432376A
(zh)
|
2019-11-29 |
2025-08-05 |
Asm Ip私人控股有限公司 |
基板处理设备
|
|
JP7527928B2
(ja)
|
2019-12-02 |
2024-08-05 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
基板処理装置、基板処理方法
|
|
KR20210070898A
(ko)
|
2019-12-04 |
2021-06-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
TWI869506B
(zh)
|
2019-12-17 |
2025-01-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成氮化釩層之方法與系統以及包括該氮化釩層之結構
|
|
US11527403B2
(en)
|
2019-12-19 |
2022-12-13 |
Asm Ip Holding B.V. |
Methods for filling a gap feature on a substrate surface and related semiconductor structures
|
|
KR20210089079A
(ko)
|
2020-01-06 |
2021-07-15 |
에이에스엠 아이피 홀딩 비.브이. |
채널형 리프트 핀
|
|
KR20210089077A
(ko)
|
2020-01-06 |
2021-07-15 |
에이에스엠 아이피 홀딩 비.브이. |
가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템
|
|
US11993847B2
(en)
|
2020-01-08 |
2024-05-28 |
Asm Ip Holding B.V. |
Injector
|
|
KR102882467B1
(ko)
|
2020-01-16 |
2025-11-05 |
에이에스엠 아이피 홀딩 비.브이. |
고 종횡비 피처를 형성하는 방법
|
|
KR102675856B1
(ko)
|
2020-01-20 |
2024-06-17 |
에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법 및 박막 표면 개질 방법
|
|
TWI889744B
(zh)
|
2020-01-29 |
2025-07-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
污染物捕集系統、及擋板堆疊
|
|
TW202513845A
(zh)
|
2020-02-03 |
2025-04-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
半導體裝置結構及其形成方法
|
|
KR20210100010A
(ko)
|
2020-02-04 |
2021-08-13 |
에이에스엠 아이피 홀딩 비.브이. |
대형 물품의 투과율 측정을 위한 방법 및 장치
|
|
US11776846B2
(en)
|
2020-02-07 |
2023-10-03 |
Asm Ip Holding B.V. |
Methods for depositing gap filling fluids and related systems and devices
|
|
KR20210103953A
(ko)
|
2020-02-13 |
2021-08-24 |
에이에스엠 아이피 홀딩 비.브이. |
가스 분배 어셈블리 및 이를 사용하는 방법
|
|
KR20210103956A
(ko)
|
2020-02-13 |
2021-08-24 |
에이에스엠 아이피 홀딩 비.브이. |
수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
|
|
TWI855223B
(zh)
|
2020-02-17 |
2024-09-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於生長磷摻雜矽層之方法
|
|
TWI895326B
(zh)
|
2020-02-28 |
2025-09-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
專用於零件清潔的系統
|
|
KR20210113043A
(ko)
|
2020-03-04 |
2021-09-15 |
에이에스엠 아이피 홀딩 비.브이. |
반응기 시스템용 정렬 고정구
|
|
KR20210116240A
(ko)
|
2020-03-11 |
2021-09-27 |
에이에스엠 아이피 홀딩 비.브이. |
조절성 접합부를 갖는 기판 핸들링 장치
|
|
KR20210116249A
(ko)
|
2020-03-11 |
2021-09-27 |
에이에스엠 아이피 홀딩 비.브이. |
록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
|
|
CN113394086A
(zh)
|
2020-03-12 |
2021-09-14 |
Asm Ip私人控股有限公司 |
用于制造具有目标拓扑轮廓的层结构的方法
|
|
US12173404B2
(en)
|
2020-03-17 |
2024-12-24 |
Asm Ip Holding B.V. |
Method of depositing epitaxial material, structure formed using the method, and system for performing the method
|
|
KR102755229B1
(ko)
|
2020-04-02 |
2025-01-14 |
에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법
|
|
TWI887376B
(zh)
|
2020-04-03 |
2025-06-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
半導體裝置的製造方法
|
|
TWI888525B
(zh)
|
2020-04-08 |
2025-07-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於選擇性蝕刻氧化矽膜之設備及方法
|
|
US11821078B2
(en)
|
2020-04-15 |
2023-11-21 |
Asm Ip Holding B.V. |
Method for forming precoat film and method for forming silicon-containing film
|
|
KR20210128343A
(ko)
|
2020-04-15 |
2021-10-26 |
에이에스엠 아이피 홀딩 비.브이. |
크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
|
|
US11996289B2
(en)
|
2020-04-16 |
2024-05-28 |
Asm Ip Holding B.V. |
Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
|
|
TW202143328A
(zh)
|
2020-04-21 |
2021-11-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於調整膜應力之方法
|
|
TW202208671A
(zh)
|
2020-04-24 |
2022-03-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成包括硼化釩及磷化釩層的結構之方法
|
|
JP2021172884A
(ja)
|
2020-04-24 |
2021-11-01 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
|
|
TW202146831A
(zh)
|
2020-04-24 |
2021-12-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
|
|
KR20210132600A
(ko)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
|
|
TWI887400B
(zh)
|
2020-04-24 |
2025-06-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於穩定釩化合物之方法及設備
|
|
KR102783898B1
(ko)
|
2020-04-29 |
2025-03-18 |
에이에스엠 아이피 홀딩 비.브이. |
고체 소스 전구체 용기
|
|
KR20210134869A
(ko)
|
2020-05-01 |
2021-11-11 |
에이에스엠 아이피 홀딩 비.브이. |
Foup 핸들러를 이용한 foup의 빠른 교환
|
|
JP7726664B2
(ja)
|
2020-05-04 |
2025-08-20 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
基板を処理するための基板処理システム
|
|
JP7736446B2
(ja)
|
2020-05-07 |
2025-09-09 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
同調回路を備える反応器システム
|
|
KR102788543B1
(ko)
|
2020-05-13 |
2025-03-27 |
에이에스엠 아이피 홀딩 비.브이. |
반응기 시스템용 레이저 정렬 고정구
|
|
TW202146699A
(zh)
|
2020-05-15 |
2021-12-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
|
|
TW202147383A
(zh)
|
2020-05-19 |
2021-12-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基材處理設備
|
|
KR20210145079A
(ko)
|
2020-05-21 |
2021-12-01 |
에이에스엠 아이피 홀딩 비.브이. |
기판을 처리하기 위한 플랜지 및 장치
|
|
KR102795476B1
(ko)
|
2020-05-21 |
2025-04-11 |
에이에스엠 아이피 홀딩 비.브이. |
다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
|
|
TWI873343B
(zh)
|
2020-05-22 |
2025-02-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於在基材上形成薄膜之反應系統
|
|
KR20210146802A
(ko)
|
2020-05-26 |
2021-12-06 |
에이에스엠 아이피 홀딩 비.브이. |
붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
|
|
TWI876048B
(zh)
|
2020-05-29 |
2025-03-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理方法
|
|
TW202212620A
(zh)
|
2020-06-02 |
2022-04-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
|
|
US11404465B2
(en)
*
|
2020-06-15 |
2022-08-02 |
Taiwan Semiconductor Manufacturing Company Limited |
Epitaxial semiconductor liner for enhancing uniformity of a charged layer in a deep trench and methods of forming the same
|
|
TW202208659A
(zh)
|
2020-06-16 |
2022-03-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
沉積含硼之矽鍺層的方法
|
|
TWI797640B
(zh)
|
2020-06-18 |
2023-04-01 |
法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 |
基於矽之自組裝單層組成物及使用該組成物之表面製備
|
|
JP7703376B2
(ja)
|
2020-06-24 |
2025-07-07 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
シリコンを備える層を形成するための方法
|
|
TWI873359B
(zh)
|
2020-06-30 |
2025-02-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理方法
|
|
TWI896694B
(zh)
|
2020-07-01 |
2025-09-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
沉積方法、半導體結構、及沉積系統
|
|
KR102707957B1
(ko)
|
2020-07-08 |
2024-09-19 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
|
TWI864307B
(zh)
|
2020-07-17 |
2024-12-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於光微影之結構、方法與系統
|
|
KR20220011092A
(ko)
|
2020-07-20 |
2022-01-27 |
에이에스엠 아이피 홀딩 비.브이. |
전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
|
|
TWI878570B
(zh)
|
2020-07-20 |
2025-04-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於沉積鉬層之方法及系統
|
|
TW202219303A
(zh)
|
2020-07-27 |
2022-05-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
薄膜沉積製程
|
|
US11274069B2
(en)
|
2020-08-13 |
2022-03-15 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Mono-substituted cyclopentadienes and metal cyclopentadienyl complexes and synthesis methods thereof
|
|
KR20220021863A
(ko)
|
2020-08-14 |
2022-02-22 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
|
US12040177B2
(en)
|
2020-08-18 |
2024-07-16 |
Asm Ip Holding B.V. |
Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
|
|
TW202228863A
(zh)
|
2020-08-25 |
2022-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
清潔基板的方法、選擇性沉積的方法、及反應器系統
|
|
TWI874701B
(zh)
|
2020-08-26 |
2025-03-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成金屬氧化矽層及金屬氮氧化矽層的方法
|
|
TW202229601A
(zh)
|
2020-08-27 |
2022-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
|
|
KR20220033997A
(ko)
|
2020-09-10 |
2022-03-17 |
에이에스엠 아이피 홀딩 비.브이. |
갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치
|
|
USD990534S1
(en)
|
2020-09-11 |
2023-06-27 |
Asm Ip Holding B.V. |
Weighted lift pin
|
|
KR20220036866A
(ko)
|
2020-09-16 |
2022-03-23 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 산화물 증착 방법
|
|
USD1012873S1
(en)
|
2020-09-24 |
2024-01-30 |
Asm Ip Holding B.V. |
Electrode for semiconductor processing apparatus
|
|
TWI889903B
(zh)
|
2020-09-25 |
2025-07-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理方法
|
|
US12009224B2
(en)
|
2020-09-29 |
2024-06-11 |
Asm Ip Holding B.V. |
Apparatus and method for etching metal nitrides
|
|
FR3114915B1
(fr)
*
|
2020-10-01 |
2022-10-21 |
Univ Lille |
Procédé de fabrication d’un matériau lithié en couches minces
|
|
KR20220045900A
(ko)
|
2020-10-06 |
2022-04-13 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
|
|
CN114293174A
(zh)
|
2020-10-07 |
2022-04-08 |
Asm Ip私人控股有限公司 |
气体供应单元和包括气体供应单元的衬底处理设备
|
|
TW202229613A
(zh)
|
2020-10-14 |
2022-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
於階梯式結構上沉積材料的方法
|
|
KR102873665B1
(ko)
|
2020-10-15 |
2025-10-17 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
|
|
KR20220053482A
(ko)
|
2020-10-22 |
2022-04-29 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
|
|
TW202223136A
(zh)
|
2020-10-28 |
2022-06-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於在基板上形成層之方法、及半導體處理系統
|
|
TW202229620A
(zh)
|
2020-11-12 |
2022-08-01 |
特文特大學 |
沉積系統、用於控制反應條件之方法、沉積方法
|
|
US12428439B2
(en)
|
2020-11-20 |
2025-09-30 |
Merck Patent Gmbh |
Lanthanide and lanthanide-like transition metal complexes
|
|
TW202229795A
(zh)
|
2020-11-23 |
2022-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
具注入器之基板處理設備
|
|
TW202235649A
(zh)
|
2020-11-24 |
2022-09-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
填充間隙之方法與相關之系統及裝置
|
|
KR20220076343A
(ko)
|
2020-11-30 |
2022-06-08 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
|
|
US12255053B2
(en)
|
2020-12-10 |
2025-03-18 |
Asm Ip Holding B.V. |
Methods and systems for depositing a layer
|
|
TW202233884A
(zh)
|
2020-12-14 |
2022-09-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成臨限電壓控制用之結構的方法
|
|
CN114639631A
(zh)
|
2020-12-16 |
2022-06-17 |
Asm Ip私人控股有限公司 |
跳动和摆动测量固定装置
|
|
TW202232639A
(zh)
|
2020-12-18 |
2022-08-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
具有可旋轉台的晶圓處理設備
|
|
TW202242184A
(zh)
|
2020-12-22 |
2022-11-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法
|
|
TW202231903A
(zh)
|
2020-12-22 |
2022-08-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
|
|
TW202226899A
(zh)
|
2020-12-22 |
2022-07-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
具匹配器的電漿處理裝置
|
|
US20220238323A1
(en)
*
|
2021-01-28 |
2022-07-28 |
Tokyo Electron Limited |
Method for selective deposition of dielectric on dielectric
|
|
WO2022190994A1
(ja)
*
|
2021-03-08 |
2022-09-15 |
株式会社クリエイティブコーティングス |
ゼオライト膜の製造方法、ガス吸着剤及びガス吸着装置
|
|
US20240194456A1
(en)
*
|
2021-03-31 |
2024-06-13 |
Tokyo Electron Limited |
Film forming method and substrate processing apparatus
|
|
USD981973S1
(en)
|
2021-05-11 |
2023-03-28 |
Asm Ip Holding B.V. |
Reactor wall for substrate processing apparatus
|
|
USD980814S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas distributor for substrate processing apparatus
|
|
USD1023959S1
(en)
|
2021-05-11 |
2024-04-23 |
Asm Ip Holding B.V. |
Electrode for substrate processing apparatus
|
|
USD980813S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas flow control plate for substrate processing apparatus
|
|
KR102592398B1
(ko)
*
|
2021-05-12 |
2023-10-25 |
한국화학연구원 |
복합형광구조체 및 이의 제조방법
|
|
WO2022266449A1
(en)
*
|
2021-06-18 |
2022-12-22 |
L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
Gallium precursors for deposition of gallium-containing oxide films
|
|
USD990441S1
(en)
|
2021-09-07 |
2023-06-27 |
Asm Ip Holding B.V. |
Gas flow control plate
|
|
WO2023069965A1
(en)
|
2021-10-21 |
2023-04-27 |
Versum Materials Us, Llc |
Silanols and silanediols
|
|
USD1099184S1
(en)
|
2021-11-29 |
2025-10-21 |
Asm Ip Holding B.V. |
Weighted lift pin
|
|
USD1060598S1
(en)
|
2021-12-03 |
2025-02-04 |
Asm Ip Holding B.V. |
Split showerhead cover
|
|
TW202402774A
(zh)
*
|
2022-03-28 |
2024-01-16 |
德商馬克專利公司 |
供化學氣相沉積(cvd)及原子層沉積(ald)應用之具有磷基配位體之金屬羰基錯合物
|
|
US12305279B2
(en)
*
|
2023-03-09 |
2025-05-20 |
Applied Materials, Inc. |
Ultra high-k hafnium oxide and hafnium zirconium oxide films
|
|
KR102851576B1
(ko)
*
|
2023-08-22 |
2025-08-29 |
주식회사 한솔케미칼 |
신규 조성물, 이를 포함하는 전구체 조성물, 및 이를 이용한 박막의 제조방법
|
|
WO2025047584A1
(ja)
*
|
2023-08-28 |
2025-03-06 |
株式会社Adeka |
薄膜の製造方法及び薄膜形成用原料
|
