JP2011525697A5 - - Google Patents
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- JP2011525697A5 JP2011525697A5 JP2011500986A JP2011500986A JP2011525697A5 JP 2011525697 A5 JP2011525697 A5 JP 2011525697A5 JP 2011500986 A JP2011500986 A JP 2011500986A JP 2011500986 A JP2011500986 A JP 2011500986A JP 2011525697 A5 JP2011525697 A5 JP 2011525697A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- depositing
- deposited
- group
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3865708P | 2008-03-21 | 2008-03-21 | |
| US61/038,657 | 2008-03-21 | ||
| US4323608P | 2008-04-08 | 2008-04-08 | |
| US61/043,236 | 2008-04-08 | ||
| US7446708P | 2008-06-20 | 2008-06-20 | |
| US61/074,467 | 2008-06-20 | ||
| PCT/US2009/037826 WO2009117670A2 (en) | 2008-03-21 | 2009-03-20 | Self-aligned barrier layers for interconnects |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011525697A JP2011525697A (ja) | 2011-09-22 |
| JP2011525697A5 true JP2011525697A5 (enExample) | 2012-05-17 |
| JP5820267B2 JP5820267B2 (ja) | 2015-11-24 |
Family
ID=41091558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011500986A Expired - Fee Related JP5820267B2 (ja) | 2008-03-21 | 2009-03-20 | 配線用セルフアライン(自己整合)バリア層 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7932176B2 (enExample) |
| JP (1) | JP5820267B2 (enExample) |
| KR (2) | KR101803221B1 (enExample) |
| CN (1) | CN102132398B (enExample) |
| WO (1) | WO2009117670A2 (enExample) |
Families Citing this family (58)
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| JP4783561B2 (ja) * | 2004-09-27 | 2011-09-28 | 株式会社アルバック | 銅配線の形成方法 |
| EP1909320A1 (en) * | 2006-10-05 | 2008-04-09 | ST Microelectronics Crolles 2 SAS | Copper diffusion barrier |
| WO2009117670A2 (en) | 2008-03-21 | 2009-09-24 | President And Fellows Of Harvard College | Self-aligned barrier layers for interconnects |
| JP5280267B2 (ja) * | 2009-03-27 | 2013-09-04 | 株式会社日本総合研究所 | 製造方法および車両 |
| JP5507909B2 (ja) * | 2009-07-14 | 2014-05-28 | 東京エレクトロン株式会社 | 成膜方法 |
| KR101770537B1 (ko) * | 2009-10-23 | 2017-08-22 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 상호 접속부를 위한 자기―정렬 배리어 및 캡핑 층 |
| KR102008769B1 (ko) | 2009-11-27 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
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| CN103313993A (zh) | 2010-11-02 | 2013-09-18 | 宇部兴产株式会社 | (酰胺氨基烷烃)金属化合物及使用所述金属化合物制备含金属的薄膜的方法 |
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| JP5969306B2 (ja) | 2012-08-08 | 2016-08-17 | 東京エレクトロン株式会社 | Cu配線の形成方法 |
| US8765602B2 (en) | 2012-08-30 | 2014-07-01 | International Business Machines Corporation | Doping of copper wiring structures in back end of line processing |
| JP6117588B2 (ja) | 2012-12-12 | 2017-04-19 | 東京エレクトロン株式会社 | Cu配線の形成方法 |
| JP2014141739A (ja) | 2012-12-27 | 2014-08-07 | Tokyo Electron Ltd | 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス |
| JP6030439B2 (ja) * | 2012-12-27 | 2016-11-24 | 東京エレクトロン株式会社 | マンガン含有膜の形成方法、処理システム、および電子デバイスの製造方法 |
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| US9184093B2 (en) | 2013-03-15 | 2015-11-10 | Applied Materials, Inc. | Integrated cluster to enable next generation interconnect |
| CN104103575B (zh) * | 2013-04-10 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | 铜互连线的形成方法 |
| US9064937B2 (en) | 2013-05-30 | 2015-06-23 | International Business Machines Corporation | Substrate bonding with diffusion barrier structures |
| JP6257217B2 (ja) | 2013-08-22 | 2018-01-10 | 東京エレクトロン株式会社 | Cu配線構造の形成方法 |
| US9043743B2 (en) * | 2013-10-22 | 2015-05-26 | International Business Machines Corporation | Automated residual material detection |
| US9362228B2 (en) * | 2013-10-22 | 2016-06-07 | Globalfoundries Inc. | Electro-migration enhancing method for self-forming barrier process in copper metalization |
| US9275952B2 (en) | 2014-01-24 | 2016-03-01 | International Business Machines Corporation | Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects |
| US9343357B2 (en) * | 2014-02-28 | 2016-05-17 | Qualcomm Incorporated | Selective conductive barrier layer formation |
| FR3025396A1 (fr) | 2014-09-02 | 2016-03-04 | St Microelectronics Tours Sas | Procede de fabrication d'un element de connexion electrique |
| US9728502B2 (en) * | 2014-11-10 | 2017-08-08 | Samsung Electronics Co., Ltd. | Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same |
| JP2016167545A (ja) * | 2015-03-10 | 2016-09-15 | 東京エレクトロン株式会社 | ビアホール底のクリーニング方法および半導体装置の製造方法 |
| JP2017050304A (ja) | 2015-08-31 | 2017-03-09 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US9842805B2 (en) | 2015-09-24 | 2017-12-12 | International Business Machines Corporation | Drive-in Mn before copper plating |
| JP6559046B2 (ja) | 2015-11-04 | 2019-08-14 | 東京エレクトロン株式会社 | パターン形成方法 |
| US20160083405A1 (en) * | 2015-11-30 | 2016-03-24 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tantalum- or vanadium-containing film forming compositions and vapor deposition of tantalum- or vanadium-containing films |
| JP2017135237A (ja) * | 2016-01-27 | 2017-08-03 | 東京エレクトロン株式会社 | Cu配線の製造方法およびCu配線製造システム |
| US10049974B2 (en) | 2016-08-30 | 2018-08-14 | International Business Machines Corporation | Metal silicate spacers for fully aligned vias |
| US10229851B2 (en) | 2016-08-30 | 2019-03-12 | International Business Machines Corporation | Self-forming barrier for use in air gap formation |
| US9786760B1 (en) | 2016-09-29 | 2017-10-10 | International Business Machines Corporation | Air gap and air spacer pinch off |
| DE112016007483T5 (de) * | 2016-12-31 | 2019-08-22 | Intel Corporation | Gehärteter Stecker für verbesserte Kurzschlussmarge |
| US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| CN108047274B (zh) * | 2017-12-15 | 2019-08-20 | 江南大学 | 一种铜互连阻挡层材料用吡啶基Mn(Ⅱ)化合物 |
| US10204829B1 (en) | 2018-01-12 | 2019-02-12 | International Business Machines Corporation | Low-resistivity metallic interconnect structures with self-forming diffusion barrier layers |
| US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
| US11152294B2 (en) | 2018-04-09 | 2021-10-19 | Corning Incorporated | Hermetic metallized via with improved reliability |
| US11133216B2 (en) | 2018-06-01 | 2021-09-28 | International Business Machines Corporation | Interconnect structure |
| KR20210064266A (ko) | 2018-09-20 | 2021-06-02 | 재단법인 공업기술연구원 | 얇은 유리 상의 유리-관통 비아를 위한 구리 금속화 |
| CN113474311B (zh) | 2019-02-21 | 2023-12-29 | 康宁股份有限公司 | 具有铜金属化贯穿孔的玻璃或玻璃陶瓷制品及其制造过程 |
| US10818589B2 (en) | 2019-03-13 | 2020-10-27 | International Business Machines Corporation | Metal interconnect structures with self-forming sidewall barrier layer |
| JP7161767B2 (ja) * | 2019-04-22 | 2022-10-27 | 気相成長株式会社 | 形成材料、形成方法、及び新規化合物 |
| TW202217037A (zh) * | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
| CN112687617B (zh) * | 2020-12-24 | 2022-07-22 | 中国电子科技集团公司第十三研究所 | 绝缘子针的制备方法及绝缘子针 |
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| US6077774A (en) * | 1996-03-29 | 2000-06-20 | Texas Instruments Incorporated | Method of forming ultra-thin and conformal diffusion barriers encapsulating copper |
| US6060534A (en) | 1996-07-11 | 2000-05-09 | Scimed Life Systems, Inc. | Medical devices comprising ionically and non-ionically crosslinked polymer hydrogels having improved mechanical properties |
| US6951682B1 (en) | 1998-12-01 | 2005-10-04 | Syntrix Biochip, Inc. | Porous coatings bearing ligand arrays and use thereof |
| US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
| KR100383759B1 (ko) | 2000-06-15 | 2003-05-14 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속 배선 형성 방법 |
| US6413815B1 (en) * | 2001-07-17 | 2002-07-02 | Macronix International Co., Ltd. | Method of forming a MIM capacitor |
| US20030134499A1 (en) * | 2002-01-15 | 2003-07-17 | International Business Machines Corporation | Bilayer HDP CVD / PE CVD cap in advanced BEOL interconnect structures and method thereof |
| KR101437250B1 (ko) | 2002-11-15 | 2014-10-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속 아미디네이트를 이용한 원자층 증착법 |
| US7026714B2 (en) * | 2003-03-18 | 2006-04-11 | Cunningham James A | Copper interconnect systems which use conductive, metal-based cap layers |
| KR100563817B1 (ko) | 2003-12-30 | 2006-03-28 | 동부아남반도체 주식회사 | 반도체 소자의 구리 배선 형성 방법 |
| JP4478038B2 (ja) * | 2004-02-27 | 2010-06-09 | 株式会社半導体理工学研究センター | 半導体装置及びその製造方法 |
| DE102004019241A1 (de) | 2004-04-16 | 2005-11-03 | Cellmed Ag | Injizierbare vernetzte und unvernetzte Alginate und ihre Verwendung in der Medizin und in der ästhetischen Chirurgie |
| US7879710B2 (en) | 2005-05-18 | 2011-02-01 | Intermolecular, Inc. | Substrate processing including a masking layer |
| EP1909320A1 (en) * | 2006-10-05 | 2008-04-09 | ST Microelectronics Crolles 2 SAS | Copper diffusion barrier |
| JP4236201B2 (ja) * | 2005-08-30 | 2009-03-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4272191B2 (ja) * | 2005-08-30 | 2009-06-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2007103546A (ja) | 2005-10-03 | 2007-04-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US20090197405A1 (en) | 2005-12-07 | 2009-08-06 | Nxp B.V. | Method of forming a layer over a surface of a first material embedded in a second material in a structure for a semiconductor device |
| US8586268B2 (en) * | 2005-12-20 | 2013-11-19 | Basf Se | Oxime ester photoinitiators |
| JP2007173511A (ja) | 2005-12-22 | 2007-07-05 | Sony Corp | 半導体装置の製造方法 |
| JP4741965B2 (ja) * | 2006-03-23 | 2011-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2007308789A (ja) | 2006-04-19 | 2007-11-29 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
| JP2008013848A (ja) * | 2006-06-08 | 2008-01-24 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
| WO2008008319A2 (en) | 2006-07-10 | 2008-01-17 | President And Fellows Of Harvard College | Selective sealing of porous dielectric materials |
| KR101059709B1 (ko) * | 2006-07-14 | 2011-08-29 | 가부시키가이샤 알박 | 반도체 장치의 제조 방법 |
| KR101629965B1 (ko) * | 2007-04-09 | 2016-06-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 구리 배선용 코발트 질화물층 및 이의 제조방법 |
| DE102007035837A1 (de) * | 2007-07-31 | 2009-02-05 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit einer Kornorientierungsschicht |
| US7884475B2 (en) * | 2007-10-16 | 2011-02-08 | International Business Machines Corporation | Conductor structure including manganese oxide capping layer |
| US20090117731A1 (en) * | 2007-11-01 | 2009-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor interconnection structure and method for making the same |
| US7555191B1 (en) | 2008-01-30 | 2009-06-30 | Joshua John Edward Moore | Self-locking unidirectional interposer springs for optical transceiver modules |
| US7651943B2 (en) * | 2008-02-18 | 2010-01-26 | Taiwan Semicondcutor Manufacturing Company, Ltd. | Forming diffusion barriers by annealing copper alloy layers |
| WO2009117670A2 (en) | 2008-03-21 | 2009-09-24 | President And Fellows Of Harvard College | Self-aligned barrier layers for interconnects |
-
2009
- 2009-03-20 WO PCT/US2009/037826 patent/WO2009117670A2/en not_active Ceased
- 2009-03-20 KR KR1020167022151A patent/KR101803221B1/ko active Active
- 2009-03-20 KR KR1020107022353A patent/KR101649714B1/ko not_active Expired - Fee Related
- 2009-03-20 JP JP2011500986A patent/JP5820267B2/ja not_active Expired - Fee Related
- 2009-03-20 US US12/408,473 patent/US7932176B2/en active Active
- 2009-03-20 CN CN200980112816.0A patent/CN102132398B/zh not_active Expired - Fee Related
-
2011
- 2011-03-18 US US13/051,792 patent/US8222134B2/en not_active Expired - Fee Related
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