JP5969306B2 - Cu配線の形成方法 - Google Patents
Cu配線の形成方法 Download PDFInfo
- Publication number
- JP5969306B2 JP5969306B2 JP2012176422A JP2012176422A JP5969306B2 JP 5969306 B2 JP5969306 B2 JP 5969306B2 JP 2012176422 A JP2012176422 A JP 2012176422A JP 2012176422 A JP2012176422 A JP 2012176422A JP 5969306 B2 JP5969306 B2 JP 5969306B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- wiring
- metal cap
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 239000011572 manganese Substances 0.000 claims description 53
- 238000012545 processing Methods 0.000 claims description 53
- 230000004888 barrier function Effects 0.000 claims description 42
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005498 polishing Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 341
- 239000010949 copper Substances 0.000 description 190
- 235000012431 wafers Nutrition 0.000 description 84
- 239000007789 gas Substances 0.000 description 64
- 238000012546 transfer Methods 0.000 description 52
- 239000010410 layer Substances 0.000 description 35
- 238000005240 physical vapour deposition Methods 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 29
- 230000008569 process Effects 0.000 description 29
- 238000005229 chemical vapour deposition Methods 0.000 description 25
- 238000000231 atomic layer deposition Methods 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 18
- 238000000151 deposition Methods 0.000 description 11
- 150000002697 manganese compounds Chemical class 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000002294 plasma sputter deposition Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000007872 degassing Methods 0.000 description 5
- 238000007733 ion plating Methods 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- -1 Ruthenium pentadienyl compounds Chemical class 0.000 description 4
- 230000008602 contraction Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910016553 CuOx Inorganic materials 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- HDWDVUXQIOWBEP-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ru] Chemical compound C(C)C1(C=CC=C1)[Ru] HDWDVUXQIOWBEP-UHFFFAOYSA-N 0.000 description 1
- LGJJVJDDNWYROS-UHFFFAOYSA-N C1(C=CC=C1)[Ru]C=C(C=C(C)C)C Chemical compound C1(C=CC=C1)[Ru]C=C(C=C(C)C)C LGJJVJDDNWYROS-UHFFFAOYSA-N 0.000 description 1
- XOSBQSGUNCVAIL-UHFFFAOYSA-N CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C Chemical compound CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C XOSBQSGUNCVAIL-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017767 Cu—Al Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- DEIHRWXJCZMTHF-UHFFFAOYSA-N [Mn].[CH]1C=CC=C1 Chemical class [Mn].[CH]1C=CC=C1 DEIHRWXJCZMTHF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000013556 antirust agent Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
まず、Cu配線の形成方法の一実施形態について図1のフローチャートおよび図2の工程断面図を参照して説明する。
第1の方法について図3を参照して説明する。なお、図3においては、バリア膜204は省略している。以下に説明する図4および図5も同様である。
第2の方法は、図4に示すように、最初に、第1の方法と同様に、デガス処理、または、H2もしくはNH3を用いた熱処理やプラズマ処理熱処理により、防錆剤を除去するとともに表面のCuOxを還元する前処理を行う(図4(a))。
第3の方法は、図5に示すように、最初に、第1の方法と同様に、デガス処理、または、H2もしくはNH3を用いた熱処理やプラズマ処理熱処理により、防錆剤を除去するとともに表面のCuOxを還元する前処理を行う(図5(a))。
次に、本発明の実施形態に係るCu配線の形成方法の実施に好適なCu配線形成システムについて説明する。
図6は上記Cu配線の形成方法の中で積み増し層の成膜までの実施に好適なマルチチャンバタイプの成膜システムの一例を示す平面図である。
次に、Cu膜を形成する第1のCu膜成膜装置22a(22b)の好適な例について説明する。
図7は、第1のCu膜成膜装置の一例を示す断面図である。ここではCu膜成膜装置としてiPVDであるICP(Inductively Coupled Plasma)型プラズマスパッタ装置を例にとって説明する。
第2のCu膜成膜装置24a(24b)としては、基本的に、図7に示す第1のCu膜成膜装置22a(22b)と同様の装置を用いることができる。また、iPVDに限らず、通常のスパッタ、イオンプレーティング等の通常のPVDを用いることもできる。積み増し層は微細な凹部に埋め込む必要がないので、第1のCu膜成膜装置22a(22b)よりも成膜速度の大きい条件で成膜を行うことが好ましい。
バリア膜成膜装置12a(12b)としては、ターゲット83を使用する材料に変えるのみで図7の成膜装置と同様の構成の成膜装置を用いてプラズマスパッタにより成膜することができる。また、プラズマスパッタに限定されず、通常のスパッタ、イオンプレーティング等の他のPVDであってもよく、CVD(Chemical Vapor Deposition)やALD(Atomic Layer Deposition)、プラズマを用いたCVDやALDで成膜することもできる。不純物を低減する観点からはPVDが好ましい。
次に、Ruライナー膜を形成するためのRuライナー膜成膜装置14a(14b)について説明する。Ruライナー膜は熱CVDにより好適に形成することができる。図8は、Ruライナー膜成膜装置の一例を示す断面図であり、熱CVDによりRuライナー膜を形成するものである。
以上の成膜システム1により上記実施形態における積み増し層の形成までを行うことができるが、アニール工程およびCMP工程が終了した後のメタルキャップおよび誘電体キャップを形成する工程は、別の成膜システムを用いて成膜する。この際に用いる成膜システムとしては、図6の成膜システムに準じたマルチチャンバタイプの成膜システムを用いることができる。ただし、必要な処理装置の数が少ない場合には、真空搬送室は一つでよい。
次に、実験例について説明する。
(埋め込み性評価等)
20nm幅のトレンチに対し、iPVDによりTaN下地膜を4nm、CVDによりRuライナー膜を2nmで成膜した後、以下のような条件でiPVDによりCu膜を20nm成膜することにより埋め込みを行った。その結果、20nm幅のトレンチが十分に埋め込まれていた。
i)配線抵抗
次に、図9のようなトレンチパターンを有し、パターン幅Wが60nmおよび80nmであるウエハに対しCu配線を形成して配線抵抗を測定した。ここでは、これらウエハに対し、iPVDによりTaN下地膜を4nm、CVDによりRuライナー膜を2nmで成膜した後、iPVDによりCu膜を成膜してトレンチを埋め込み、さらにCu積み増し層を形成し、その後、アニールおよびCMPを行ってCu配線パターンを形成し、さらにその上にMnO2膜からなるメタルキャップを2nmの厚さで形成した後、SiCN誘電体キャップを20nmの厚さで形成したサンプル(MnO2キャップあり)と、CMPまでを同様に行った後、メタルキャップを形成せずにSiCN誘電体キャップを形成したサンプル(MnO2キャップなし)を作成した。
次に、図11のようなトレンチパターンを有し、パターン幅Wが60nmであるウエハに対しCu配線を形成して線間容量を測定した。ここでは、このようなウエハに対し、上述のような「MnO2キャップあり」のサンプルと、「MnO2キャップなし」のサンプルを作成した。
次に、図13のようなトレンチパターンを有し、パターン幅Wが60nmであるウエハに対しCu配線を形成して線間リーク電流を測定した。ここでは、このようなウエハに対し、上述のような「MnO2キャップあり」のサンプルと、「MnO2キャップなし」のサンプルを作成した。
次に、図15のようなテストパターン(パターン幅100nm、ビア径80nm)を有するウエハに対しCu配線を形成して信頼性を評価した。ここでは、このようなウエハに対し、上述のような「MnO2キャップあり」のサンプルと、「MnO2キャップなし」のサンプルを作成した。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、成膜システムとしては、図6のようなタイプに限らず、一つの搬送装置に全ての成膜装置が接続されているタイプであってもよい。また、図6のようなマルチチャンバタイプのシステムではなく、バリア膜、Ruライナー膜、Cu膜、積み増し層のうち、一部のみを同一の成膜システムで形成し、残部を別個に設けた装置により大気暴露を経て成膜するようにしてもよいし、全てを別個の装置で大気暴露を経て成膜するようにしてもよい。メタルキャップおよび誘電体キャップの形成についても、一部の装置のみを同一の成膜システムで形成し、残部を別個に設けた装置により大気暴露を経て成膜するようにしてもよいし、全てを別個の装置で大気暴露を経て成膜するようにしてもよい。
12a,12b;バリア膜成膜装置
14a,14b;Ruライナー膜成膜装置
22a,22b;第1のCu膜成膜装置
24a,24b;第2のCu膜成膜装置
201;下部構造
202;層間絶縁膜(絶縁膜)
203;トレンチ
204;バリア膜
205;Ruライナー膜
206;Cu膜
207;積み増し層
208;Cu配線
209;メタルキャップ(Mn含有膜)
210;酸化マンガン膜(MnO2膜)
211;Mn膜
212;MnSiOx膜
213;誘電体キャップ
W;半導体ウエハ(被処理基板)
Claims (9)
- 基板表面に存在する絶縁膜に形成されたトレンチを含む所定パターンの凹部にCu配線を形成するCu配線の形成方法であって、
少なくとも前記凹部の表面にバリア膜を形成する工程と、
PVDによりCu膜を形成して前記凹部内に前記Cu膜を埋め込む工程と、
次いで、前記Cu膜の上に積み増し層を形成する工程と、
CMPにより全面を研磨して前記凹部内にCu配線を形成する工程と、
CMPにより研磨した後の基板表面の前記Cu配線および前記絶縁膜を含む全面に酸化マンガン膜からなるメタルキャップを形成する工程と、
前記メタルキャップの上に誘電体キャップを形成する工程と、
前記バリア膜を形成した後、前記Cu膜を形成する前に、Ru膜を形成する工程と
を有することを特徴とするCu配線の形成方法。 - 前記メタルキャップを形成する工程は、PVDまたはCVDもしくはALDにより酸化マンガン膜を成膜し、その酸化マンガン膜をメタルキャップとすることを特徴とする請求項1に記載のCu配線の形成方法。
- 前記メタルキャップを形成する工程は、PVDまたはCVDもしくはALDによりMn膜を形成した後、Mn膜に酸化処理を施して酸化マンガン膜とし、その酸化マンガン膜をメタルキャップとすることを特徴とする請求項1に記載のCu配線の形成方法。
- 基板表面に存在する絶縁膜に形成されたトレンチを含む所定パターンの凹部にCu配線を形成するCu配線の形成方法であって、
少なくとも前記凹部の表面にバリア膜を形成する工程と、
PVDによりCu膜を形成して前記凹部内に前記Cu膜を埋め込む工程と、
次いで、前記Cu膜の上に積み増し層を形成する工程と、
CMPにより全面を研磨して前記凹部内にCu配線を形成する工程と、
CMPにより研磨した後の基板表面の前記Cu配線および前記絶縁膜を含む全面にMn膜を成膜後、アニールすることにより、前記Cu配線上のMn膜および前記絶縁膜上の自己整合絶縁膜からなるメタルキャップを形成する工程と、
前記メタルキャップの上に誘電体キャップを形成する工程と、
前記バリア膜を形成した後、前記Cu膜を形成する前に、Ru膜を形成する工程と
を有することを特徴とするCu配線の形成方法。 - 前記Ru膜は、CVDにより形成されることを特徴とする請求項1から請求項4のいずれか1項に記載のCu配線の形成方法。
- 前記Cu膜の形成は、基板が収容された処理容器内にプラズマ生成ガスによりプラズマを生成し、Cuからなるターゲットから粒子を飛翔させて、粒子を前記プラズマ中でイオン化させ、前記基板にバイアス電力を印加してイオンを基板上に引きこむ装置により行われることを特徴とする請求項1から請求項5のいずれか1項に記載のCu配線の形成方法。
- 前記積み増し層の形成は、PVDによりCu膜を形成することにより行うことを特徴とする請求項1から請求項6のいずれか1項に記載のCu配線の形成方法。
- 前記バリア膜は、Ti膜、TiN膜、Ta膜、TaN膜、Ta/TaNの2層膜、TaCN膜、W膜、WN膜、WCN膜、Zr膜、ZrN膜、V膜、VN膜、Nb膜、NbN膜からなる群から選択されるものであることを特徴とする請求項1から請求項7のいずれか1項に記載のCu配線の形成方法。
- コンピュータ上で動作し、Cu配線形成システムを制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項8のいずれかのCu配線の形成方法が行われるように、コンピュータに前記Cu配線形成システムを制御させることを特徴とする記憶媒体。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012176422A JP5969306B2 (ja) | 2012-08-08 | 2012-08-08 | Cu配線の形成方法 |
KR1020130093526A KR101662369B1 (ko) | 2012-08-08 | 2013-08-07 | Cu 배선의 형성 방법 및 기억매체 |
US13/962,327 US9064690B2 (en) | 2012-08-08 | 2013-08-08 | Method for forming Cu wiring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012176422A JP5969306B2 (ja) | 2012-08-08 | 2012-08-08 | Cu配線の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014036109A JP2014036109A (ja) | 2014-02-24 |
JP5969306B2 true JP5969306B2 (ja) | 2016-08-17 |
Family
ID=50066511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012176422A Expired - Fee Related JP5969306B2 (ja) | 2012-08-08 | 2012-08-08 | Cu配線の形成方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9064690B2 (ja) |
JP (1) | JP5969306B2 (ja) |
KR (1) | KR101662369B1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9142456B2 (en) * | 2013-07-30 | 2015-09-22 | Lam Research Corporation | Method for capping copper interconnect lines |
US20150206798A1 (en) * | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure And Method of Forming |
JP6318744B2 (ja) * | 2014-03-18 | 2018-05-09 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6385856B2 (ja) * | 2015-02-26 | 2018-09-05 | 東京エレクトロン株式会社 | Cu配線の形成方法および半導体装置の製造方法 |
JP6584326B2 (ja) * | 2015-03-16 | 2019-10-02 | 東京エレクトロン株式会社 | Cu配線の製造方法 |
JP2016219660A (ja) * | 2015-05-22 | 2016-12-22 | ソニー株式会社 | 半導体装置、製造方法、固体撮像素子、および電子機器 |
JP2017135237A (ja) * | 2016-01-27 | 2017-08-03 | 東京エレクトロン株式会社 | Cu配線の製造方法およびCu配線製造システム |
US10157784B2 (en) * | 2016-02-12 | 2018-12-18 | Tokyo Electron Limited | Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization |
DE102018131694A1 (de) * | 2018-09-28 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selektives abscheiden einer metallsperrschicht bei damascene-prozessen |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100904779B1 (ko) | 2004-10-19 | 2009-06-25 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 스퍼터링에 의한 성막방법 및 성막장치 |
JP2006148075A (ja) * | 2004-10-19 | 2006-06-08 | Tokyo Electron Ltd | 成膜方法及びプラズマ成膜装置 |
JP2007103546A (ja) * | 2005-10-03 | 2007-04-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2008147467A (ja) * | 2006-12-12 | 2008-06-26 | Matsushita Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2009105289A (ja) * | 2007-10-24 | 2009-05-14 | Tokyo Electron Ltd | Cu配線の形成方法 |
JP2009164471A (ja) * | 2008-01-09 | 2009-07-23 | Panasonic Corp | 高信頼性銅配線及びその製造方法 |
KR101649714B1 (ko) | 2008-03-21 | 2016-08-30 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 상호접속부를 위한 자기정렬 배리어 층 |
JP5417754B2 (ja) * | 2008-07-11 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜方法及び処理システム |
US7799681B2 (en) | 2008-07-15 | 2010-09-21 | Tokyo Electron Limited | Method for forming a ruthenium metal cap layer |
US20100081274A1 (en) | 2008-09-29 | 2010-04-01 | Tokyo Electron Limited | Method for forming ruthenium metal cap layers |
JP5487748B2 (ja) * | 2009-06-16 | 2014-05-07 | 東京エレクトロン株式会社 | バリヤ層、成膜方法及び処理システム |
JP5507909B2 (ja) | 2009-07-14 | 2014-05-28 | 東京エレクトロン株式会社 | 成膜方法 |
US8377822B2 (en) * | 2010-05-21 | 2013-02-19 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
JP5429078B2 (ja) * | 2010-06-28 | 2014-02-26 | 東京エレクトロン株式会社 | 成膜方法及び処理システム |
JP5392215B2 (ja) * | 2010-09-28 | 2014-01-22 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
WO2012060428A1 (ja) | 2010-11-02 | 2012-05-10 | 宇部興産株式会社 | (アミドアミノアルカン)金属化合物、及び当該金属化合物を用いた金属含有薄膜の製造方法 |
-
2012
- 2012-08-08 JP JP2012176422A patent/JP5969306B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-07 KR KR1020130093526A patent/KR101662369B1/ko active IP Right Grant
- 2013-08-08 US US13/962,327 patent/US9064690B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101662369B1 (ko) | 2016-10-04 |
KR20140020203A (ko) | 2014-02-18 |
JP2014036109A (ja) | 2014-02-24 |
US20140045329A1 (en) | 2014-02-13 |
US9064690B2 (en) | 2015-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5969306B2 (ja) | Cu配線の形成方法 | |
JP6257217B2 (ja) | Cu配線構造の形成方法 | |
WO2012133400A1 (ja) | Cu配線の形成方法 | |
JP6139298B2 (ja) | Cu配線の形成方法 | |
JP5767570B2 (ja) | Cu配線の形成方法およびCu膜の成膜方法、ならびに成膜システム | |
JP6117588B2 (ja) | Cu配線の形成方法 | |
US8399353B2 (en) | Methods of forming copper wiring and copper film, and film forming system | |
KR101846049B1 (ko) | Cu 배선의 제조 방법 및 기억 매체 | |
US10096548B2 (en) | Method of manufacturing Cu wiring | |
JP5788785B2 (ja) | Cu配線の形成方法および成膜システム | |
US20140287163A1 (en) | Method of forming copper wiring and method and system for forming copper film | |
KR20180117575A (ko) | Cu 배선의 제조 방법 및 Cu 배선 제조 시스템 | |
JP2017050304A (ja) | 半導体装置の製造方法 | |
JP6584326B2 (ja) | Cu配線の製造方法 | |
WO2014010333A1 (ja) | Cu配線の形成方法およびコンピュータ読み取り可能な記憶媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150325 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160308 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160707 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5969306 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |