WO2012133400A1 - Cu配線の形成方法 - Google Patents
Cu配線の形成方法 Download PDFInfo
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- WO2012133400A1 WO2012133400A1 PCT/JP2012/057919 JP2012057919W WO2012133400A1 WO 2012133400 A1 WO2012133400 A1 WO 2012133400A1 JP 2012057919 W JP2012057919 W JP 2012057919W WO 2012133400 A1 WO2012133400 A1 WO 2012133400A1
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- 238000000034 method Methods 0.000 title claims abstract description 82
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 93
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 91
- 239000000956 alloy Substances 0.000 claims abstract description 91
- 230000004888 barrier function Effects 0.000 claims abstract description 50
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims description 51
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 14
- 229910017767 Cu—Al Inorganic materials 0.000 claims description 12
- 229910017566 Cu-Mn Inorganic materials 0.000 claims description 11
- 229910017871 Cu—Mn Inorganic materials 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910017518 Cu Zn Inorganic materials 0.000 claims description 4
- 229910017755 Cu-Sn Inorganic materials 0.000 claims description 4
- 229910017752 Cu-Zn Inorganic materials 0.000 claims description 4
- 229910003336 CuNi Inorganic materials 0.000 claims description 4
- 229910017770 Cu—Ag Inorganic materials 0.000 claims description 4
- 229910017818 Cu—Mg Inorganic materials 0.000 claims description 4
- 229910017927 Cu—Sn Inorganic materials 0.000 claims description 4
- 229910017943 Cu—Zn Inorganic materials 0.000 claims description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 4
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims description 3
- 229910017885 Cu—Pt Inorganic materials 0.000 claims description 3
- 229910017945 Cu—Ti Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 abstract description 238
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 312
- 239000010410 layer Substances 0.000 description 108
- 235000012431 wafers Nutrition 0.000 description 72
- 238000012546 transfer Methods 0.000 description 53
- 239000007789 gas Substances 0.000 description 46
- 230000008569 process Effects 0.000 description 31
- 238000005240 physical vapour deposition Methods 0.000 description 28
- 238000005204 segregation Methods 0.000 description 20
- 230000007246 mechanism Effects 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 12
- 238000002294 plasma sputter deposition Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008602 contraction Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- -1 Ruthenium pentadienyl compounds Chemical class 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 229910017816 Cu—Co Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- HDWDVUXQIOWBEP-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ru] Chemical compound C(C)C1(C=CC=C1)[Ru] HDWDVUXQIOWBEP-UHFFFAOYSA-N 0.000 description 1
- LGJJVJDDNWYROS-UHFFFAOYSA-N C1(C=CC=C1)[Ru]C=C(C=C(C)C)C Chemical compound C1(C=CC=C1)[Ru]C=C(C=C(C)C)C LGJJVJDDNWYROS-UHFFFAOYSA-N 0.000 description 1
- XOSBQSGUNCVAIL-UHFFFAOYSA-N CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C Chemical compound CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C XOSBQSGUNCVAIL-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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Abstract
Description
まず、Cu配線の形成方法の第1の実施形態について図1のフローチャートおよび図2の工程断面図を参照して説明する。
次に、Cu配線の形成方法の第2の実施形態について図3のフローチャートおよび図4の工程断面図を参照して説明する。
次に、Cu配線の形成方法の第3の実施形態について図5のフローチャートおよび図6の工程断面図を参照して説明する。
次に、合金成分のCu中への拡散を確認した実験について説明する。
[合金成分がAlの場合]
ここでは、合金成分であるAlの拡散を確認する目的で、TiNバリア4nm、Ru膜3nmを形成した後、サンプル1では15nmのCu-Al膜、および35nmの純Cu膜を順に成膜し、サンプル2では25nmのCu-Al膜、および25nmの純Cu膜を順に成膜し、サンプル3ではCu-Al合金のみを50nm成膜し、いずれのサンプルも400℃で30minのアニールを施した。その際の二次イオン質量分析(SIMS)により各元素の深さ方向の分布を測定した結果を図7に示す。
また、合金成分としてのAlは酸素と結合しやすく、Cuとも結合しやすいことから、Cu-Al合金膜とキャップ層との密着性を向上させることができる。
ここでは、合金成分であるMnの拡散を確認する目的で、図8に示すように、Si基板の上に熱酸化(SiO2)膜が形成されたウエハ上に、iPVDで4nmのTaNバリア膜を形成し、CVDで3nmのRu膜を形成した後、iPVDで100nmの純Cu膜を形成し、さらにiPVDで20nmのCuMn膜(Mn:2at%)を形成し、その上にiPVDで100nmの純Cu膜を形成し、最後にCVDで3nmのRu膜を形成してブランケットサンプルを作製した。このようにCuMn膜を純Cu膜でサンドイッチすることにより、Mnの拡散の影響のみを把握することができる。
このことから、上記3つの実施形態において合金成分であるMnをキャップ層とCu配線との界面に偏析させ得ることが理解される。合金成分としてのMnは酸素と結合しやすく、Cuとも結合しやすいことから、Cu-Mn合金膜とキャップ層との密着性を向上させることができる。
次に、本発明の実施形態に係るCu配線の形成方法の実施に好適な成膜システムについて説明する。図10は本発明の実施形態に係るCu配線の形成方法の実施に好適なマルチチャンバタイプの成膜システムの一例を示す平面図である。
次に、純Cu膜を形成するCu膜成膜装置22a(22b)の好適な例について説明する。
図11は、Cu膜成膜装置の一例を示す断面図である。ここではCu膜成膜装置としてiPVDであるICP(Inductively Coupled Plasma)型プラズマスパッタ装置を例にとって説明する。
なお、Cu膜成膜装置の各構成部も、上述の制御部40により制御されるようになっている。
Cu合金膜成膜装置24a(24b)としては、図11に示すCu膜成膜装置22a(22b)のターゲット83を純CuからCu合金に変えるのみで、他の構成はCu膜成膜装置22a(22b)と同様のプラズマスパッタ装置を用いることができる。また、埋め込み性を重視する必要がない場合等には、iPVDに限らず、通常のスパッタ、イオンプレーティング等の通常のPVDを用いることもできる。
バリア膜成膜装置12a(12b)としては、ターゲット83を使用する材料に変えるのみで図11の成膜装置と同様の構成の成膜装置を用いてプラズマスパッタにより成膜することができる。また、プラズマスパッタに限定されず、通常のスパッタ、イオンプレーティング等の他のPVDであってもよく、CVD(Chemical Vapor Deposition)やALD(Atomic Layer Deposition)、プラズマを用いたCVDやALDで成膜することもできる。不純物を低減する観点からはPVDが好ましい。
次に、Ruライナー膜を形成するためのRu膜成膜装置14a(14b)について説明する。Ruライナー膜は熱CVDにより好適に形成することができる。図12は、Ru膜成膜装置の一例を示す断面図であり、熱CVDによりRu膜を形成するものである。
以上の成膜システム1により上記第1~第3の実施形態におけるCu合金膜の形成までを行うことができるが、それ以降のアニール工程、CMP工程、キャップ層成膜工程は、成膜システム1から搬出した後のウエハWに対し、アニール装置、CMP装置、キャップ層成膜装置を用いて行うことができる。これらの装置は、通常用いられる構成のものでよい。これら装置と成膜システム1とでCu配線形成システムを構成し、制御部40と同じ機能を有する共通の制御部により一括して制御するようにすることにより、上記第1~第3の実施形態に示された方法を一つのレシピにより一括して制御することができる。
上記第1~第3の実施形態によれば、PVDにより純Cu膜を形成して少なくともトレンチやホールのような凹部内の表面に純Cuを存在させ、PVDによりCu合金膜を、凹部の上面よりも上に積み増されるように形成し、キャップ層を形成する前および/またはキャップ層を形成する際に、Cu配線とキャップ層の界面に対応する部分を含む領域に、Cu合金膜に含まれる合金成分を偏析させるので、キャップ層を形成した際に、キャップ層とCu配線との界面に合金成分が十分存在することとなり、キャップ層とCu配線との密着性を良好とすることができる。また、合金成分はキャップ層とCu配線と界面に偏析するため、Cu配線内に存在する合金成分の濃度は少なく、Cu合金で配線を形成する場合に比べて抵抗が低いCu配線を形成することができる。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、成膜システムとしては、図10のようなタイプに限らず、一つの搬送装置に全ての成膜装置が接続されているタイプであってもよい。また、図10のようなマルチチャンバタイプのシステムではなく、バリア膜、Ruライナー膜、純Cu膜(純Cuシード膜)、Cu合金膜のうち、一部のみを同一の成膜システムで形成し、残部を別個に設けた装置により大気暴露を経て成膜するようにしてもよいし、全てを別個の装置で大気暴露を経て成膜するようにしてもよい。
Claims (17)
- 基板に形成された所定パターンの凹部内にCuを埋め込んでCu配線を形成するCu配線の形成方法であって、
少なくとも前記凹部の表面にバリア膜を形成する工程と、
PVDにより純Cu膜を形成して少なくとも前記凹部内の表面に純Cuを存在させる工程と、
次いで、PVDによりCu合金からなるCu合金膜を、前記凹部の上面よりも上に積み増されるように形成する工程と、
CMPにより全面を研磨して前記凹部内にCu配線を形成する工程と、
前記Cu配線上に誘電体からなるキャップ層を形成する工程と、
前記キャップ層を形成する前および/または前記キャップ層を形成する際に、前記Cu合金膜中の合金成分を拡散させて、前記Cu配線と前記キャップ層の界面に対応する部分を含む領域に、前記Cu合金膜に含まれる合金成分を偏析させる工程と
を有する、Cu配線の形成方法。 - 前記バリア膜を形成した後、前記純Cu膜を形成する前に、Ru膜を形成する工程をさらに有する、請求項1に記載のCu配線の形成方法。
- 前記Ru膜は、CVDにより形成される、請求項2に記載のCu配線の形成方法。
- 前記純Cu膜を形成する際に、前記凹部内の全体に純Cuが埋め込まれるようにする、請求項1に記載のCu配線の形成方法。
- 前記純Cu膜を形成する際に、前記凹部内の表面に純Cuのシード膜として形成する、請求項1に記載のCu配線の形成方法。
- 前記純Cu膜を形成する際に、前記凹部内の途中まで空間を残すように純Cuが埋め込まれるようにする、請求項1に記載のCu配線の形成方法。
- 前記合金成分を拡散させて偏析させる工程は、前記Cu合金膜を形成した後に基板をアニールすることを含む、請求項1に記載のCu配線の形成方法。
- 前記合金成分を拡散させて偏析させる工程は、前記Cu合金膜を形成する際の基板の加熱を含む、請求項1に記載のCu配線の形成方法。
- 前記合金成分を拡散させて偏析させる工程は、前記キャップ層を形成する際の基板の加熱を含む、請求項1に記載のCu配線の形成方法。
- 前記純Cu膜の形成は、基板が収容された処理容器内にプラズマ生成ガスによりプラズマを生成し、純CuからなるターゲットからCuを飛翔させて、Cuを前記プラズマ中でイオン化させ、前記基板にバイアス電力を印加してCuイオンを基板上に引きこむ装置により行われる、請求項1に記載のCu配線の形成方法。
- 前記Cu合金膜の形成は、基板が収容された処理容器内にプラズマ生成ガスによりプラズマを生成し、Cu合金からなるターゲットからCuおよび合金成分を放出させて、Cuおよび合金成分を前記プラズマ中でイオン化させ、前記基板にバイアス電力を印加してCuイオンおよび合金成分のイオンを基板上に引きこむ装置により行われる、請求項1に記載のCu配線の形成方法。
- 前記Cu合金膜を構成するCu合金は、Cu-Al、Cu-Mn、Cu-Mg、Cu-Ag、Cu-Sn、Cu-Pb、Cu-Zn、Cu-Pt、Cu-Au、CuNi、Cu-Co、およびCu-Tiから選択されるものである、請求項1に記載のCu配線の形成方法。
- 前記Cu合金膜を構成するCu合金は、Cu-Mnである、請求項12に記載のCu配線の形成方法。
- 前記Cu合金膜を構成するCu合金は、Cu-Alである、請求項12に記載のCu配線の形成方法。
- 前記バリア膜は、Ti膜、TiN膜、Ta膜、TaN膜、Ta/TaNの2層膜、TaCN膜、W膜、WN膜、WCN膜、Zr膜、ZrN膜、V膜、VN膜、Nb膜、NbN膜からなる群から選択されるものである、請求項1に記載のCu配線の形成方法。
- 前記バリア膜は、PVDにより形成される、請求項1に記載のCu配線の形成方法。
- コンピュータ上で動作し、Cu配線形成システムを制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、
少なくとも基板に形成された所定パターンの凹部の表面にバリア膜を形成する工程と、
PVDにより純Cu膜を形成して少なくとも前記凹部内の表面に純Cuを存在させる工程と、
次いで、PVDによりCu合金からなるCu合金膜を、前記凹部の上面よりも上に積み増されるように形成する工程と、
CMPにより全面を研磨して前記凹部内にCu配線を形成する工程と、
前記Cu配線上に誘電体からなるキャップ層を形成する工程と、
前記キャップ層を形成する前および/または前記キャップ層を形成する際に、前記Cu合金膜中の合金成分を拡散させて、前記Cu配線と前記キャップ層の界面に対応する部分を含む領域に、前記Cu合金膜に含まれる合金成分を偏析させる工程と
を有する、Cu配線の形成方法が行われるように、コンピュータに前記Cu配線形成システムを制御させる、記憶媒体。
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