JP2015041708A - Cu配線構造の形成方法 - Google Patents
Cu配線構造の形成方法 Download PDFInfo
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- JP2015041708A JP2015041708A JP2013172492A JP2013172492A JP2015041708A JP 2015041708 A JP2015041708 A JP 2015041708A JP 2013172492 A JP2013172492 A JP 2013172492A JP 2013172492 A JP2013172492 A JP 2013172492A JP 2015041708 A JP2015041708 A JP 2015041708A
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- Prior art keywords
- film
- forming
- wiring
- alloy
- wiring structure
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000010410 layer Substances 0.000 claims abstract description 91
- 230000004888 barrier function Effects 0.000 claims abstract description 69
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 60
- 239000000956 alloy Substances 0.000 claims abstract description 60
- 229910017767 Cu—Al Inorganic materials 0.000 claims abstract description 56
- 239000011229 interlayer Substances 0.000 claims abstract description 21
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 4
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 22
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- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 6
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- HDWDVUXQIOWBEP-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ru] Chemical compound C(C)C1(C=CC=C1)[Ru] HDWDVUXQIOWBEP-UHFFFAOYSA-N 0.000 description 1
- LGJJVJDDNWYROS-UHFFFAOYSA-N C1(C=CC=C1)[Ru]C=C(C=C(C)C)C Chemical compound C1(C=CC=C1)[Ru]C=C(C=C(C)C)C LGJJVJDDNWYROS-UHFFFAOYSA-N 0.000 description 1
- XOSBQSGUNCVAIL-UHFFFAOYSA-N CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C Chemical compound CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C XOSBQSGUNCVAIL-UHFFFAOYSA-N 0.000 description 1
- 241000237942 Conidae Species 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017816 Cu—Co Inorganic materials 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- 229910017885 Cu—Pt Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
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- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
まず、Cu配線構造の形成方法の一実施形態について図1のフローチャートおよび図2の工程断面図を参照して説明する。
次に、本発明の実施形態に係るCu配線の形成方法の実施に好適な成膜システムについて説明する。図4は本発明の実施形態に係るCu配線の形成方法の実施に好適なマルチチャンバタイプの成膜システムの一例を示す平面図である。
最初に、Cu合金膜を形成するCu合金膜成膜装置22a(22b)について説明する。
図5は、Cu合金膜成膜装置の一例を示す断面図である。ここではiPVDであるICP(Inductively Coupled Plasma)型プラズマスパッタ装置を例にとって説明する。
Cu膜成膜装置24a(24b)としては、基本的に、図5に示すCu合金膜成膜装置22a(22b)と同様の装置を用いることができる。純Cuを成膜する際には、ターゲット83として純Cuを用いる。また、埋め込み性を重視する必要がない場合等には、iPVDに限らず、通常のスパッタ、イオンプレーティング等の通常のPVDを用いることもできる。
バリア膜成膜装置12a(12b)としては、ターゲット83をバリア膜を構成する材料に変えるのみで図5の成膜装置と同様の構成の成膜装置を用いてプラズマスパッタにより成膜することができる。また、プラズマスパッタに限定されず、通常のスパッタ、イオンプレーティング等の他のPVDであってもよく、CVDやALD(Atomic Layer Deposition)、プラズマを用いたCVDやALDで成膜することもできる。不純物を低減する観点からはPVDが好ましい。
次に、Ruライナー膜およびキャップ層を構成するRu膜を形成するためのRu膜成膜装置14a(14b)について説明する。Ru膜は熱CVDにより好適に形成することができる。図6は、Ru膜成膜装置の一例を示す断面図であり、熱CVDによりRu膜を形成するものである。
以上の成膜システム1により上記実施形態における積み増し層の形成まで、およびキャップ層の形成を行うことができるが、積み増し層形成後に行われるアニール工程、CMP工程は、成膜システム1から搬出した後のウエハWに対し、アニール装置、CMP装置を用いて行うことができる。また、キャップ層を形成した後の層間絶縁膜の形成も別途の成膜装置により行うことができる。これらの装置は、通常用いられる構成のものでよい。これら装置と成膜システム1とでCu配線構造形成システムを構成し、制御部40と同じ機能を有する共通の制御部により一括して制御するようにすることにより、上記実施形態に示された方法を一つの処理レシピにより一括して制御することができる。
次に、実験例について説明する。
ここでは、図7に示すように、シリコンからなるブランケットウエハ上にiPVDによりバリア膜としてTaN5nm/Ta5nmの積層膜を形成した後、同じくiPVDによりCu膜またはCu−2at.%Al合金膜を50nmの厚さで形成し、その上に表面膜として、TaNおよびRuの積層膜またはRu単膜をトータルの厚さ3nmになるように形成し、複数のサンプルを作製した。なお、表面膜をRu単膜にしたサンプルは表面膜がCu配線のキャップ膜を模擬し、表面膜をTaNおよびRuの積層膜としたサンプルは表面膜がCu配線のバリア膜およびRuライナー膜を模擬する。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、トレンチやホールのような凹部にPVDによりCu−Al合金を埋め込んだ例を示したが、Cuを主体とし、少なくとも一部にCu−Al合金部分を有するAl含有Cu膜を埋め込めばよく、凹部の全てをCu−Al合金で埋め込むことに限定されない。例えば凹部にCu−Al合金膜を形成した後、純Cu膜を形成してもよいし、純Cu膜を形成した後に上部のみをCu−Al合金にしてもよい。前者の例としては、CVDによりCu−Al合金シード膜を形成した後、Cuめっきを施す方法でも、PVDでCu−Al合金膜を薄く形成した後、PVDで純Cu膜を形成する方法でもよい。この場合にもCu−Al合金膜のAlが純Cu膜中に拡散し、キャップ層を形成する際にRu−Al合金を含む界面層を形成することができる。また、後者の例としては、凹部にPVDまたはめっきにより純Cu膜を埋め込んだ後に埋め込み部分の上面部分にAlを拡散させて、その部分をCu−Al合金にする方法を挙げることができる。この場合にも、その後にキャップ層を形成した際にRu−Al合金を含む界面層を形成することができる。この場合には、AlがCuの粒界に存在することによるエレクトロマイグレーション耐性向上効果は小さいものの、Cu配線の密着性が良好になることによりエレクトロマイグレーション耐性を確保することができ、さらに、Cu配線の抵抗値をより低くできるという効果を得ることができる。
12a,12b;バリア膜成膜装置
14a,14b;Ru膜成膜装置
22a,22b;Cu合金膜成膜装置
24a,24b;Cu膜成膜装置
201;下部構造
202;層間絶縁膜
203;トレンチ
204;バリア膜
205;Ruライナー膜
206;Cu−Al合金膜
207;積み増し層
208;Cu配線
209;キャップ層
210;界面層
211;上層の層間絶縁膜
W;半導体ウエハ(被処理基板)
Claims (13)
- 基板上の第1の絶縁膜に形成された所定パターンの凹部にCu配線を形成し、その後前記Cu配線上に、キャップ層を介して上層の絶縁膜を形成するCu配線構造の形成方法であって、
少なくとも前記凹部の表面にCu拡散のバリアとなるバリア膜を形成する工程と、
前記凹部内に、Cuを主体とし、少なくとも一部にCu−Al合金部分を有するAl含有Cu膜を埋め込む工程と、
前記Al含有Cu膜からCu配線を形成する工程と、
前記Cu配線の上にRu膜からなるキャップ層を形成する工程と、
前記キャップ層を形成する際の熱またはその後の加熱処理により、前記Cu配線の前記キャップ層との界面近傍に、Ru−Al合金を含む界面層を形成する工程と、
前記キャップ層の上に第2の絶縁膜を形成する工程と
を有することを特徴とするCu配線構造の形成方法。 - 前記Al含有Cu膜は、Cu−Al合金膜であることを特徴とする請求項1に記載のCu配線構造の形成方法。
- Cu−Al合金膜の形成は、基板が収容された処理容器内にプラズマ生成ガスによりプラズマを生成し、Cu−Al合金からなるターゲットから粒子を飛翔させて、粒子を前記プラズマ中でイオン化させ、前記基板にバイアス電力を印加してイオンを基板上に引きこむ装置により行われることを特徴とする請求項2に記載のCu配線構造の形成方法。
- 前記Al含有Cu膜を形成する工程は、最初にCu−Al合金膜を形成し、次いで純Cu膜を形成することを特徴とする請求項1に記載のCu配線構造の形成方法。
- 前記Cu−Al合金膜はPVDにより形成し、純Cu膜はめっきまたはPVDにより形成することを特徴とする請求項4に記載のCu配線構造の形成方法。
- 前記Al含有Cu膜を形成する工程は、前記凹部に純Cu膜を埋め込んだ後、前記純Cu膜の上部のみをCu−Al合金にすることを特徴とする請求項1に記載のCu配線構造の形成方法。
- 前記純Cu膜の上面部分にAlを拡散させることにより前記純Cu膜の上部のみをCu−Al合金にすることを特徴とする請求項6に記載のCu配線構造の形成方法。
- 前記バリア膜を形成した後、前記Al含有Cu膜を形成する前に、Ru膜を形成する工程をさらに有することを特徴とする請求項1から請求項7のいずれか1項に記載のCu配線構造の形成方法。
- 前記Ru膜は、CVDにより形成されることを特徴とする請求項8に記載のCu配線構造の形成方法。
- 前記第1の絶縁膜および前記第2の絶縁膜は、層間絶縁膜であり、低誘電率膜からなることを特徴とする請求項1から請求項9のいずれか1項に記載のCu配線構造の形成方法。
- 前記凹部内のAl含有Cu膜からCu配線を形成する工程は、前記Al含有Cu膜の上に積み増し層を形成した後、全面を研磨するものであることを特徴とする請求項1から請求項10のいずれか1項に記載のCu配線構造の形成方法。
- 前記バリア膜は、Ti膜、TiN膜、Ta膜、TaN膜、Ta/TaNの2層膜、TaCN膜、W膜、WN膜、WCN膜、Zr膜、ZrN膜、V膜、VN膜、Nb膜、NbN膜からなる群から選択されるものであることを特徴とする請求項1から請求項11のいずれか1項に記載のCu配線構造の形成方法。
- コンピュータ上で動作し、Cu配線形成システムを制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項12のいずれかのCu配線構造の形成方法が行われるように、コンピュータに前記Cu配線形成システムを制御させることを特徴とする記憶媒体。
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