JP2008510076A5 - - Google Patents
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- Publication number
- JP2008510076A5 JP2008510076A5 JP2007528021A JP2007528021A JP2008510076A5 JP 2008510076 A5 JP2008510076 A5 JP 2008510076A5 JP 2007528021 A JP2007528021 A JP 2007528021A JP 2007528021 A JP2007528021 A JP 2007528021A JP 2008510076 A5 JP2008510076 A5 JP 2008510076A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- group
- substrate
- deposit
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 239000012691 Cu precursor Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 150000004699 copper complex Chemical class 0.000 claims description 7
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- 239000012190 activator Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 8
- -1 4-pyridinyl Chemical group 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 6
- 150000001879 copper Chemical class 0.000 description 5
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical compound C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 description 4
- FEJUGLKDZJDVFY-UHFFFAOYSA-N 9-borabicyclo(3.3.1)nonane Chemical group C1CCC2CCCC1B2 FEJUGLKDZJDVFY-UHFFFAOYSA-N 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000078 germane Chemical group 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000006724 (C1-C5) alkyl ester group Chemical group 0.000 description 1
- NOIXNOMHHWGUTG-UHFFFAOYSA-N 2-[[4-[4-pyridin-4-yl-1-(2,2,2-trifluoroethyl)pyrazol-3-yl]phenoxy]methyl]quinoline Chemical compound C=1C=C(OCC=2N=C3C=CC=CC3=CC=2)C=CC=1C1=NN(CC(F)(F)F)C=C1C1=CC=NC=C1 NOIXNOMHHWGUTG-UHFFFAOYSA-N 0.000 description 1
- SDTMFDGELKWGFT-UHFFFAOYSA-N 2-methylpropan-2-olate Chemical compound CC(C)(C)[O-] SDTMFDGELKWGFT-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- AZOFWQDMTKZNMJ-UHFFFAOYSA-N copper 1-(dimethylamino)propan-1-olate Chemical compound [Cu++].CCC([O-])N(C)C.CCC([O-])N(C)C AZOFWQDMTKZNMJ-UHFFFAOYSA-N 0.000 description 1
- AYNKDSOCVPQIEG-UHFFFAOYSA-N copper 1-aminoethanolate Chemical compound NC([O-])C.[Cu+2].NC([O-])C AYNKDSOCVPQIEG-UHFFFAOYSA-N 0.000 description 1
- UTQPYFQVJZORSD-UHFFFAOYSA-N copper bis(trimethylsilyl)azanide Chemical compound [Cu+2].C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C UTQPYFQVJZORSD-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- UUEVFMOUBSLVJW-UHFFFAOYSA-N oxo-[[1-[2-[2-[2-[4-(oxoazaniumylmethylidene)pyridin-1-yl]ethoxy]ethoxy]ethyl]pyridin-4-ylidene]methyl]azanium;dibromide Chemical compound [Br-].[Br-].C1=CC(=C[NH+]=O)C=CN1CCOCCOCCN1C=CC(=C[NH+]=O)C=C1 UUEVFMOUBSLVJW-UHFFFAOYSA-N 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- SNOOUWRIMMFWNE-UHFFFAOYSA-M sodium;6-[(3,4,5-trimethoxybenzoyl)amino]hexanoate Chemical compound [Na+].COC1=CC(C(=O)NCCCCCC([O-])=O)=CC(OC)=C1OC SNOOUWRIMMFWNE-UHFFFAOYSA-M 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60178604P | 2004-08-16 | 2004-08-16 | |
| US60/601,786 | 2004-08-16 | ||
| PCT/US2005/029439 WO2006033731A2 (en) | 2004-08-16 | 2005-08-16 | Atomic layer deposition of copper using surface-activating agents |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008510076A JP2008510076A (ja) | 2008-04-03 |
| JP2008510076A5 true JP2008510076A5 (enExample) | 2008-09-25 |
| JP4943333B2 JP4943333B2 (ja) | 2012-05-30 |
Family
ID=35519919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007528021A Expired - Fee Related JP4943333B2 (ja) | 2004-08-16 | 2005-08-16 | 表面活性化剤を用いた銅の原子層蒸着 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7604840B2 (enExample) |
| EP (1) | EP1791988A2 (enExample) |
| JP (1) | JP4943333B2 (enExample) |
| KR (1) | KR20070051331A (enExample) |
| IL (1) | IL181362A0 (enExample) |
| TW (1) | TW200611990A (enExample) |
| WO (1) | WO2006033731A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7488435B2 (en) | 2006-08-07 | 2009-02-10 | E. I. Du Pont De Nemours And Company | Copper(I) complexes and processes for deposition of copper films by atomic layer deposition |
| WO2008018861A1 (en) * | 2006-08-07 | 2008-02-14 | E. I. Du Pont De Nemours And Company | Copper(i) complexes and processes for deposition of copper films by atomic layer deposition |
| US20090130466A1 (en) * | 2007-11-16 | 2009-05-21 | Air Products And Chemicals, Inc. | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
| JP2010209410A (ja) * | 2009-03-10 | 2010-09-24 | Tokyo Electron Ltd | Ｃｕ膜の成膜方法および記憶媒体 |
| WO2010132871A1 (en) | 2009-05-15 | 2010-11-18 | Wayne State University | Thermally stable volatile film precursors |
| US9255327B2 (en) | 2010-08-24 | 2016-02-09 | Wayne State University | Thermally stable volatile precursors |
| US9822446B2 (en) | 2010-08-24 | 2017-11-21 | Wayne State University | Thermally stable volatile precursors |
| US20130330473A1 (en) * | 2012-06-11 | 2013-12-12 | Wayne State University | Atomic Layer Deposition of Transition Metal Thin Films Using Boranes as the Reducing Agent |
| US8907115B2 (en) | 2012-12-10 | 2014-12-09 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition |
| US9758866B2 (en) | 2013-02-13 | 2017-09-12 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films |
| US9249505B2 (en) | 2013-06-28 | 2016-02-02 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| US9157149B2 (en) | 2013-06-28 | 2015-10-13 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| KR20150075049A (ko) | 2013-12-24 | 2015-07-02 | 주식회사 유피케미칼 | 구리 금속 필름 및 이의 제조 방법, 및 이를 이용한 반도체 소자용 구리 배선의 형성 방법 |
| LU92795B1 (en) | 2015-08-10 | 2017-02-14 | Luxembourg Inst Science & Tech List | SIO2 thin film produced by atomic layer deposition at room temperature |
| US10061368B2 (en) * | 2016-05-26 | 2018-08-28 | International Business Machines Corporation | Enhancing performance of one or more slower partitions of an integrated circuit to improve performance of the integrated circuit |
| CN109844172A (zh) * | 2016-10-13 | 2019-06-04 | 巴斯夫欧洲公司 | 生产含金属膜的方法 |
| WO2020011637A1 (en) * | 2018-07-12 | 2020-01-16 | Basf Se | Process for the generation of metal- or semimetal-containing films |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900320A (en) * | 1971-09-30 | 1975-08-19 | Bell & Howell Co | Activation method for electroless plating |
| US4171393A (en) * | 1977-06-20 | 1979-10-16 | Eastman Kodak Company | Electroless plating method requiring no reducing agent in the plating bath |
| US4301196A (en) * | 1978-09-13 | 1981-11-17 | Kollmorgen Technologies Corp. | Electroless copper deposition process having faster plating rates |
| US4956197A (en) * | 1986-10-27 | 1990-09-11 | International Business Machines Corporation | Plasma conditioning of a substrate for electroless plating |
| US6759325B2 (en) * | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
| US6369256B1 (en) * | 2000-06-09 | 2002-04-09 | National Research Council Of Canada | Self-reducible copper(II) source reagents for chemical vapor deposition of copper metal |
| US6821891B2 (en) * | 2001-11-16 | 2004-11-23 | Applied Materials, Inc. | Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
| US6939578B2 (en) * | 2002-01-18 | 2005-09-06 | E. I. Du Pont De Nemours And Company | Volatile copper(II) complexes for deposition of copper films by atomic layer deposition |
| US20040009665A1 (en) * | 2002-06-04 | 2004-01-15 | Applied Materials, Inc. | Deposition of copper films |
| WO2004040642A1 (en) * | 2002-10-29 | 2004-05-13 | Asm America, Inc. | Oxygen bridge structures and methods |
-
2005
- 2005-08-16 TW TW094127951A patent/TW200611990A/zh unknown
- 2005-08-16 EP EP05813286A patent/EP1791988A2/en not_active Withdrawn
- 2005-08-16 KR KR1020077006008A patent/KR20070051331A/ko not_active Withdrawn
- 2005-08-16 US US11/204,823 patent/US7604840B2/en not_active Expired - Fee Related
- 2005-08-16 JP JP2007528021A patent/JP4943333B2/ja not_active Expired - Fee Related
- 2005-08-16 WO PCT/US2005/029439 patent/WO2006033731A2/en not_active Ceased
-
2007
- 2007-02-15 IL IL181362A patent/IL181362A0/en unknown
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