JP2008538126A5 - - Google Patents

Download PDF

Info

Publication number
JP2008538126A5
JP2008538126A5 JP2008501891A JP2008501891A JP2008538126A5 JP 2008538126 A5 JP2008538126 A5 JP 2008538126A5 JP 2008501891 A JP2008501891 A JP 2008501891A JP 2008501891 A JP2008501891 A JP 2008501891A JP 2008538126 A5 JP2008538126 A5 JP 2008538126A5
Authority
JP
Japan
Prior art keywords
ruthenium
metal layer
pressure
ruthenium metal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008501891A
Other languages
English (en)
Japanese (ja)
Other versions
JP4308314B2 (ja
JP2008538126A (ja
Filing date
Publication date
Priority claimed from US10/907,022 external-priority patent/US7273814B2/en
Application filed filed Critical
Publication of JP2008538126A publication Critical patent/JP2008538126A/ja
Publication of JP2008538126A5 publication Critical patent/JP2008538126A5/ja
Application granted granted Critical
Publication of JP4308314B2 publication Critical patent/JP4308314B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008501891A 2005-03-16 2006-02-21 パターン化された基板上にルテニウム金属層を形成する方法 Active JP4308314B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/907,022 US7273814B2 (en) 2005-03-16 2005-03-16 Method for forming a ruthenium metal layer on a patterned substrate
PCT/US2006/006031 WO2006101646A1 (en) 2005-03-16 2006-02-21 Method for forming a ruthenium metal layer on a patterned substrate

Publications (3)

Publication Number Publication Date
JP2008538126A JP2008538126A (ja) 2008-10-09
JP2008538126A5 true JP2008538126A5 (enExample) 2009-04-09
JP4308314B2 JP4308314B2 (ja) 2009-08-05

Family

ID=36680176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008501891A Active JP4308314B2 (ja) 2005-03-16 2006-02-21 パターン化された基板上にルテニウム金属層を形成する方法

Country Status (6)

Country Link
US (1) US7273814B2 (enExample)
JP (1) JP4308314B2 (enExample)
KR (1) KR101069299B1 (enExample)
CN (1) CN100514599C (enExample)
TW (1) TWI307139B (enExample)
WO (1) WO2006101646A1 (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US8110489B2 (en) * 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7708835B2 (en) * 2004-11-29 2010-05-04 Tokyo Electron Limited Film precursor tray for use in a film precursor evaporation system and method of using
US7638002B2 (en) * 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
JP2007073637A (ja) * 2005-09-05 2007-03-22 Tokyo Electron Ltd 成膜方法および半導体装置の製造方法
KR100655139B1 (ko) * 2005-11-03 2006-12-08 주식회사 하이닉스반도체 캐패시터 제조 방법
TWI329135B (en) * 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
KR100717501B1 (ko) * 2005-12-29 2007-05-14 동부일렉트로닉스 주식회사 반도체 소자의 금속 배선 형성 방법
KR20080101893A (ko) * 2006-02-08 2008-11-21 제이에스알 가부시끼가이샤 금속막의 형성 방법
KR101379015B1 (ko) * 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
JP5207962B2 (ja) * 2006-02-28 2013-06-12 東京エレクトロン株式会社 ルテニウム膜の成膜方法
US7713907B2 (en) * 2006-03-06 2010-05-11 Uchicago Argonne, Llc Method of preparing size-selected metal clusters
TW200746268A (en) * 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US7846256B2 (en) * 2007-02-23 2010-12-07 Tokyo Electron Limited Ampule tray for and method of precursor surface area
US8058164B2 (en) * 2007-06-04 2011-11-15 Lam Research Corporation Methods of fabricating electronic devices using direct copper plating
KR101544198B1 (ko) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US7998864B2 (en) * 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8124528B2 (en) * 2008-04-10 2012-02-28 Micron Technology, Inc. Method for forming a ruthenium film
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
JP5549848B2 (ja) * 2008-12-25 2014-07-16 東ソー株式会社 ルテニウム化合物、その製法及びそれを用いた成膜法
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
JP5732772B2 (ja) 2009-12-28 2015-06-10 東ソー株式会社 ルテニウム錯体混合物、その製造方法、成膜用組成物、ルテニウム含有膜及びその製造方法
CN101845629B (zh) * 2010-04-14 2012-03-28 江苏时代华宜电子科技有限公司 钼片复合镀钌工艺
US8859422B2 (en) * 2011-01-27 2014-10-14 Tokyo Electron Limited Method of forming copper wiring and method and system for forming copper film
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
CN102400113A (zh) * 2011-12-14 2012-04-04 嘉兴科民电子设备技术有限公司 远程脉冲射频电感耦合放电等离子体增强原子层沉积装置
US20140134351A1 (en) 2012-11-09 2014-05-15 Applied Materials, Inc. Method to deposit cvd ruthenium
US9558997B2 (en) * 2012-12-28 2017-01-31 Globalfoundries Inc. Integration of Ru wet etch and CMP for beol interconnects with Ru layer
KR20170029637A (ko) * 2014-08-27 2017-03-15 울트라테크 인크. 개선된 스루 실리콘 비아
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
CN107836034B (zh) * 2015-06-05 2022-07-19 东京毅力科创株式会社 用于互连的钌金属特征部填充
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
KR101820237B1 (ko) 2016-04-29 2018-01-19 한양대학교 산학협력단 가압식 금속 단원자층 제조 방법, 금속 단원자층 구조체 및 가압식 금속 단원자층 제조 장치
US9768063B1 (en) 2016-06-30 2017-09-19 Lam Research Corporation Dual damascene fill
US20180053688A1 (en) * 2016-08-16 2018-02-22 Tokyo Electron Limited Method of metal filling recessed features in a substrate
WO2018129295A1 (en) * 2017-01-06 2018-07-12 Applied Materials, Inc. Water assisted highly pure ruthenium thin film deposition
JP6807251B2 (ja) * 2017-03-02 2021-01-06 東京エレクトロン株式会社 ルテニウム配線の製造方法
US10731250B2 (en) * 2017-06-06 2020-08-04 Lam Research Corporation Depositing ruthenium layers in interconnect metallization
US11807939B2 (en) * 2017-07-18 2023-11-07 Kojundo Chemical Laboratory Co., Ltd. Atomic layer deposition method for metal thin films
US10411017B2 (en) 2017-08-31 2019-09-10 Micron Technology, Inc. Multi-component conductive structures for semiconductor devices
KR102686799B1 (ko) * 2018-11-08 2024-07-22 엔테그리스, 아이엔씨. 루테늄 전구체 및 환원 가스를 사용하는 화학 증착 공정
TW202200828A (zh) 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 含鉬薄膜的氣相沉積
TWI790943B (zh) * 2022-03-11 2023-01-21 漢民科技股份有限公司 化學氣相沉積系統與方法
US20240145300A1 (en) * 2022-10-31 2024-05-02 Applied Materials, Inc. Buffer Layer for Dielectric Protection in Physical Vapor Deposition Metal Liner Applications

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000022658A1 (en) 1998-10-14 2000-04-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
US6479100B2 (en) * 2001-04-05 2002-11-12 Applied Materials, Inc. CVD ruthenium seed for CVD ruthenium deposition
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
KR100408725B1 (ko) * 2001-12-10 2003-12-11 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
KR100805843B1 (ko) 2001-12-28 2008-02-21 에이에스엠지니텍코리아 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템
US6713373B1 (en) * 2002-02-05 2004-03-30 Novellus Systems, Inc. Method for obtaining adhesion for device manufacture
US7279432B2 (en) * 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7264846B2 (en) 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
KR100505680B1 (ko) * 2003-03-27 2005-08-03 삼성전자주식회사 루테늄층을 갖는 반도체 메모리 소자의 제조방법 및루테늄층제조장치
US6737313B1 (en) * 2003-04-16 2004-05-18 Micron Technology, Inc. Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
US7107998B2 (en) * 2003-10-16 2006-09-19 Novellus Systems, Inc. Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
US20050110142A1 (en) * 2003-11-26 2005-05-26 Lane Michael W. Diffusion barriers formed by low temperature deposition
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium

Similar Documents

Publication Publication Date Title
JP2008538126A5 (enExample)
TWI564944B (zh) 減少兩個不同含金屬薄膜之間的界面處的氧化的方法與於蝕刻停止層上沈積金屬層的方法
TWI654684B (zh) 於阻障表面上之鈷沉積
TW396566B (en) Improved silicon IC contacts using composite TiN barrier layers
JP2008538129A5 (enExample)
TWI385730B (zh) 銅金屬化用之具有變化組成的阻障層之製造方法
JP2010539698A5 (enExample)
TW200717709A (en) A method for forming a ruthenium metal layer on a patterned substrate
JP4001509B2 (ja) 半導体素子の拡散防止膜形成方法
JP2002285333A5 (enExample)
JP2004536225A5 (enExample)
JP2008013848A5 (enExample)
TW201447012A (zh) 於銅表面上之選擇性鈷沉積
WO2007111779A8 (en) Method of integrating peald ta-containing films into cu metallization
TW200702476A (en) Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
WO2002058115A3 (en) Method for deposit copper on metal films
JP2018182328A (ja) 誘電体基板上の誘電体材料の選択的な縦方向成長の方法
WO2006036865A3 (en) Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
JP2019062190A5 (enExample)
JP2020534702A5 (enExample)
TW201920735A (zh) 用於銅互連件之晶種層
JP4804725B2 (ja) 半導体装置の導電性構造体の形成方法
JP2018182325A (ja) 逆行的なプロファイルを有する凹状フィーチャのボイドのない充填方法
JP2004179605A (ja) アルミニウム金属配線形成方法
CN101091003B (zh) 钽氮化物膜的形成方法