JP2002285333A5 - - Google Patents

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Publication number
JP2002285333A5
JP2002285333A5 JP2001086930A JP2001086930A JP2002285333A5 JP 2002285333 A5 JP2002285333 A5 JP 2002285333A5 JP 2001086930 A JP2001086930 A JP 2001086930A JP 2001086930 A JP2001086930 A JP 2001086930A JP 2002285333 A5 JP2002285333 A5 JP 2002285333A5
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JP
Japan
Prior art keywords
ruthenium
semiconductor device
oxidizing gas
gas
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001086930A
Other languages
English (en)
Japanese (ja)
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JP2002285333A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001086930A priority Critical patent/JP2002285333A/ja
Priority claimed from JP2001086930A external-priority patent/JP2002285333A/ja
Priority to TW091104128A priority patent/TW557501B/zh
Priority to US10/101,600 priority patent/US6743739B2/en
Priority to KR1020020016057A priority patent/KR20020076147A/ko
Publication of JP2002285333A publication Critical patent/JP2002285333A/ja
Priority to US10/795,430 priority patent/US6992022B2/en
Publication of JP2002285333A5 publication Critical patent/JP2002285333A5/ja
Pending legal-status Critical Current

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JP2001086930A 2001-03-26 2001-03-26 半導体装置の製造方法 Pending JP2002285333A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001086930A JP2002285333A (ja) 2001-03-26 2001-03-26 半導体装置の製造方法
TW091104128A TW557501B (en) 2001-03-26 2002-03-06 Process for fabrication of semiconductor device
US10/101,600 US6743739B2 (en) 2001-03-26 2002-03-21 Fabrication method for semiconductor integrated devices
KR1020020016057A KR20020076147A (ko) 2001-03-26 2002-03-25 반도체 장치의 제조 방법
US10/795,430 US6992022B2 (en) 2001-03-26 2004-03-09 Fabrication method for semiconductor integrated devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001086930A JP2002285333A (ja) 2001-03-26 2001-03-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002285333A JP2002285333A (ja) 2002-10-03
JP2002285333A5 true JP2002285333A5 (enExample) 2005-03-17

Family

ID=18942238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001086930A Pending JP2002285333A (ja) 2001-03-26 2001-03-26 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US6743739B2 (enExample)
JP (1) JP2002285333A (enExample)
KR (1) KR20020076147A (enExample)
TW (1) TW557501B (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7014709B1 (en) * 2001-01-19 2006-03-21 Novellus Systems, Inc. Thin layer metal chemical vapor deposition
JP2002231656A (ja) * 2001-01-31 2002-08-16 Hitachi Ltd 半導体集積回路装置の製造方法
JP4218350B2 (ja) * 2002-02-01 2009-02-04 パナソニック株式会社 強誘電体薄膜素子およびその製造方法、これを用いた薄膜コンデンサ並びに圧電アクチュエータ
KR100476556B1 (ko) * 2002-04-11 2005-03-18 삼성전기주식회사 압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7404985B2 (en) 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
JP2004146559A (ja) * 2002-10-24 2004-05-20 Elpida Memory Inc 容量素子の製造方法
JP4586956B2 (ja) * 2002-12-24 2010-11-24 セイコーエプソン株式会社 電極膜の製造方法
US20040146643A1 (en) * 2003-01-24 2004-07-29 Shih-Liang Chou Method of determining deposition temperature
KR100505674B1 (ko) * 2003-02-26 2005-08-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US20050253268A1 (en) * 2004-04-22 2005-11-17 Shao-Ta Hsu Method and structure for improving adhesion between intermetal dielectric layer and cap layer
JP4571836B2 (ja) * 2004-07-23 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
DE102004061094A1 (de) * 2004-12-18 2006-06-22 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen sowie dazu geeignete Ausgangsstoffe
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US7396766B2 (en) * 2005-03-31 2008-07-08 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
KR100672731B1 (ko) * 2005-10-04 2007-01-24 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
TWI329135B (en) 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
JP5049491B2 (ja) * 2005-12-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
KR20080101893A (ko) * 2006-02-08 2008-11-21 제이에스알 가부시끼가이샤 금속막의 형성 방법
JP5207962B2 (ja) * 2006-02-28 2013-06-12 東京エレクトロン株式会社 ルテニウム膜の成膜方法
WO2007106788A2 (en) 2006-03-10 2007-09-20 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
JP2007266464A (ja) * 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US7833358B2 (en) * 2006-04-07 2010-11-16 Applied Materials, Inc. Method of recovering valuable material from exhaust gas stream of a reaction chamber
DE102006027932A1 (de) * 2006-06-14 2007-12-20 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen
US8524931B2 (en) * 2007-01-17 2013-09-03 Advanced Technology Materials, Inc. Precursor compositions for ALD/CVD of group II ruthenate thin films
US7737028B2 (en) * 2007-09-28 2010-06-15 Applied Materials, Inc. Selective ruthenium deposition on copper materials
US20090236908A1 (en) * 2008-03-21 2009-09-24 Kun-Woo Park Reservoir capacitor and semiconductor memory device including the same
US8274777B2 (en) * 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
JP4764461B2 (ja) * 2008-09-17 2011-09-07 株式会社東芝 半導体装置
US8663735B2 (en) * 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
SG174423A1 (en) 2009-03-17 2011-10-28 Advanced Tech Materials Method and composition for depositing ruthenium with assistive metal species
KR101096840B1 (ko) * 2010-01-04 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20120298998A1 (en) * 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
WO2014124056A1 (en) 2013-02-08 2014-08-14 Advanced Technology Materials, Inc. Ald processes for low leakage current and low equivalent oxide thickness bitao films
US10950689B2 (en) * 2015-09-23 2021-03-16 Nanyang Technological University Semiconductor device with a through-substrate via hole having therein a capacitor and a through-substrate via conductor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314727A (en) * 1992-07-28 1994-05-24 Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota Chemical vapor deposition of iron, ruthenium, and osmium
JP3334605B2 (ja) * 1998-05-07 2002-10-15 三菱電機株式会社 電極形成用ｃｖｄ原料、およびそれを用いて形成されたキャパシタ用電極、配線膜
JP3905977B2 (ja) * 1998-05-22 2007-04-18 株式会社東芝 半導体装置の製造方法
US6284655B1 (en) * 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
WO2000022658A1 (en) * 1998-10-14 2000-04-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JP4152028B2 (ja) * 1999-01-25 2008-09-17 株式会社Ａｄｅｋａ ルテニウム系薄膜の製造方法
KR100691495B1 (ko) * 1999-07-24 2007-03-09 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 형성 방법
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications

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