JP2005203569A5 - - Google Patents
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- Publication number
- JP2005203569A5 JP2005203569A5 JP2004008418A JP2004008418A JP2005203569A5 JP 2005203569 A5 JP2005203569 A5 JP 2005203569A5 JP 2004008418 A JP2004008418 A JP 2004008418A JP 2004008418 A JP2004008418 A JP 2004008418A JP 2005203569 A5 JP2005203569 A5 JP 2005203569A5
- Authority
- JP
- Japan
- Prior art keywords
- metal thin
- thin film
- barrier metal
- gas
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims 29
- 230000004888 barrier function Effects 0.000 claims 27
- 239000010409 thin film Substances 0.000 claims 27
- 239000007789 gas Substances 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 239000010408 film Substances 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 239000011810 insulating material Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004008418A JP2005203569A (ja) | 2004-01-15 | 2004-01-15 | 半導体装置の製造方法及び半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004008418A JP2005203569A (ja) | 2004-01-15 | 2004-01-15 | 半導体装置の製造方法及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005203569A JP2005203569A (ja) | 2005-07-28 |
| JP2005203569A5 true JP2005203569A5 (enExample) | 2006-10-19 |
Family
ID=34821765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004008418A Pending JP2005203569A (ja) | 2004-01-15 | 2004-01-15 | 半導体装置の製造方法及び半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005203569A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4931170B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4931174B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4931169B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4931172B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4931173B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4931171B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| US8158197B2 (en) | 2005-03-03 | 2012-04-17 | Ulvac, Inc. | Method for forming tantalum nitride film |
| JP2007211326A (ja) * | 2006-02-13 | 2007-08-23 | Nec Electronics Corp | 成膜装置および成膜方法 |
| JP2010153487A (ja) | 2008-12-24 | 2010-07-08 | Panasonic Corp | 半導体装置及びその製造方法 |
| US8557702B2 (en) | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
| JP2012074714A (ja) * | 2011-11-14 | 2012-04-12 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001053077A (ja) * | 1999-08-13 | 2001-02-23 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| US7015138B2 (en) * | 2001-03-27 | 2006-03-21 | Sharp Laboratories Of America, Inc. | Multi-layered barrier metal thin films for Cu interconnect by ALCVD |
| CN100593235C (zh) * | 2003-06-13 | 2010-03-03 | 应用材料公司 | 用于铜金属化的ald氮化钽的集成 |
-
2004
- 2004-01-15 JP JP2004008418A patent/JP2005203569A/ja active Pending
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