JP2004193162A5 - - Google Patents
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- Publication number
- JP2004193162A5 JP2004193162A5 JP2002355728A JP2002355728A JP2004193162A5 JP 2004193162 A5 JP2004193162 A5 JP 2004193162A5 JP 2002355728 A JP2002355728 A JP 2002355728A JP 2002355728 A JP2002355728 A JP 2002355728A JP 2004193162 A5 JP2004193162 A5 JP 2004193162A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- substrate
- carbon
- hydrogen
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002355728A JP4142941B2 (ja) | 2002-12-06 | 2002-12-06 | 半導体装置の製造方法 |
| US10/726,678 US7129175B2 (en) | 2002-12-06 | 2003-12-04 | Method of manufacturing semiconductor device |
| TW092134359A TWI232484B (en) | 2002-12-06 | 2003-12-05 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002355728A JP4142941B2 (ja) | 2002-12-06 | 2002-12-06 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004193162A JP2004193162A (ja) | 2004-07-08 |
| JP2004193162A5 true JP2004193162A5 (enExample) | 2006-01-19 |
| JP4142941B2 JP4142941B2 (ja) | 2008-09-03 |
Family
ID=32756333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002355728A Expired - Lifetime JP4142941B2 (ja) | 2002-12-06 | 2002-12-06 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7129175B2 (enExample) |
| JP (1) | JP4142941B2 (enExample) |
| TW (1) | TWI232484B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4720266B2 (ja) * | 2005-04-08 | 2011-07-13 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及びコンピュータプログラム |
| JP4701017B2 (ja) * | 2005-06-21 | 2011-06-15 | パナソニック株式会社 | 半導体装置の製造方法及び半導体装置 |
| JP2007220998A (ja) * | 2006-02-17 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US7803722B2 (en) * | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
| US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
| US8511281B2 (en) * | 2009-07-10 | 2013-08-20 | Tula Technology, Inc. | Skip fire engine control |
| US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
| WO2011090626A2 (en) | 2009-12-30 | 2011-07-28 | Applied Materials, Inc. | Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio |
| US8329262B2 (en) | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
| CN102754193A (zh) | 2010-01-06 | 2012-10-24 | 应用材料公司 | 使用氧化物衬垫的可流动电介质 |
| JP2013521650A (ja) | 2010-03-05 | 2013-06-10 | アプライド マテリアルズ インコーポレイテッド | ラジカル成分ｃｖｄによる共形層 |
| US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
| US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
| US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
| US8466073B2 (en) * | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
| US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
| US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
| US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
| US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
| US10176984B2 (en) | 2017-02-14 | 2019-01-08 | Lam Research Corporation | Selective deposition of silicon oxide |
| JP2018147976A (ja) * | 2017-03-03 | 2018-09-20 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
| US10242866B2 (en) | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| US10460930B2 (en) * | 2017-11-22 | 2019-10-29 | Lam Research Corporation | Selective growth of SiO2 on dielectric surfaces in the presence of copper |
| WO2019169335A1 (en) | 2018-03-02 | 2019-09-06 | Lam Research Corporation | Selective deposition using hydrolysis |
| JP6946374B2 (ja) | 2019-06-20 | 2021-10-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747119A (en) * | 1993-02-05 | 1998-05-05 | Kabushiki Kaisha Toshiba | Vapor deposition method and apparatus |
| US6306746B1 (en) * | 1999-12-30 | 2001-10-23 | Koninklijke Philips Electronics | Backend process for fuse link opening |
| WO2002054484A2 (en) * | 2001-01-03 | 2002-07-11 | Dow Corning Corporation | Metal ion diffusion barrier layers |
-
2002
- 2002-12-06 JP JP2002355728A patent/JP4142941B2/ja not_active Expired - Lifetime
-
2003
- 2003-12-04 US US10/726,678 patent/US7129175B2/en not_active Expired - Lifetime
- 2003-12-05 TW TW092134359A patent/TWI232484B/zh not_active IP Right Cessation
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