JP2012506640A5 - - Google Patents
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- JP2012506640A5 JP2012506640A5 JP2011533281A JP2011533281A JP2012506640A5 JP 2012506640 A5 JP2012506640 A5 JP 2012506640A5 JP 2011533281 A JP2011533281 A JP 2011533281A JP 2011533281 A JP2011533281 A JP 2011533281A JP 2012506640 A5 JP2012506640 A5 JP 2012506640A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride layer
- silicon
- depositing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 28
- 239000007789 gas Substances 0.000 claims 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 19
- 238000000151 deposition Methods 0.000 claims 19
- 229910052710 silicon Inorganic materials 0.000 claims 19
- 239000010703 silicon Substances 0.000 claims 19
- 239000003989 dielectric material Substances 0.000 claims 15
- 235000012239 silicon dioxide Nutrition 0.000 claims 14
- 239000000377 silicon dioxide Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 229910052757 nitrogen Inorganic materials 0.000 claims 10
- 239000002019 doping agent Substances 0.000 claims 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 229910052796 boron Inorganic materials 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 230000014759 maintenance of location Effects 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/255,617 | 2008-10-21 | ||
| US12/255,617 US8252653B2 (en) | 2008-10-21 | 2008-10-21 | Method of forming a non-volatile memory having a silicon nitride charge trap layer |
| PCT/US2009/061390 WO2010048236A2 (en) | 2008-10-21 | 2009-10-21 | Non-volatile memory having silicon nitride charge trap layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012506640A JP2012506640A (ja) | 2012-03-15 |
| JP2012506640A5 true JP2012506640A5 (enExample) | 2012-12-06 |
Family
ID=42107963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011533281A Pending JP2012506640A (ja) | 2008-10-21 | 2009-10-21 | 窒化シリコン電荷トラップ層を有する不揮発性メモリ |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8252653B2 (enExample) |
| JP (1) | JP2012506640A (enExample) |
| KR (1) | KR101553554B1 (enExample) |
| CN (2) | CN102197483A (enExample) |
| TW (1) | TW201025513A (enExample) |
| WO (1) | WO2010048236A2 (enExample) |
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2008
- 2008-10-21 US US12/255,617 patent/US8252653B2/en active Active
- 2008-10-22 US US12/256,173 patent/US8501568B2/en not_active Expired - Fee Related
- 2008-10-22 US US12/256,119 patent/US7816205B2/en not_active Expired - Fee Related
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2009
- 2009-10-21 KR KR1020117011380A patent/KR101553554B1/ko active Active
- 2009-10-21 CN CN2009801424516A patent/CN102197483A/zh active Pending
- 2009-10-21 TW TW098135640A patent/TW201025513A/zh unknown
- 2009-10-21 JP JP2011533281A patent/JP2012506640A/ja active Pending
- 2009-10-21 WO PCT/US2009/061390 patent/WO2010048236A2/en not_active Ceased
- 2009-10-21 CN CN2013101362575A patent/CN103280446A/zh active Pending
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