JP2012506640A - 窒化シリコン電荷トラップ層を有する不揮発性メモリ - Google Patents

窒化シリコン電荷トラップ層を有する不揮発性メモリ Download PDF

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JP2012506640A
JP2012506640A JP2011533281A JP2011533281A JP2012506640A JP 2012506640 A JP2012506640 A JP 2012506640A JP 2011533281 A JP2011533281 A JP 2011533281A JP 2011533281 A JP2011533281 A JP 2011533281A JP 2012506640 A JP2012506640 A JP 2012506640A
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silicon nitride
silicon
nitride layer
layer
nitrogen
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JP2012506640A5 (enExample
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ミハエラ バルシーヌ，
ウラジミール ズブコフ，
リー−クン シャ，
アティフ ヌリ，
レザ アーガヴァニ，
デレク アール． ウィッティ，
アミール アル−バヤーティ，
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Applied Materials Inc
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Applied Materials Inc
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
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    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
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  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
JP2011533281A 2008-10-21 2009-10-21 窒化シリコン電荷トラップ層を有する不揮発性メモリ Pending JP2012506640A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/255,617 2008-10-21
US12/255,617 US8252653B2 (en) 2008-10-21 2008-10-21 Method of forming a non-volatile memory having a silicon nitride charge trap layer
PCT/US2009/061390 WO2010048236A2 (en) 2008-10-21 2009-10-21 Non-volatile memory having silicon nitride charge trap layer

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JP2012506640A true JP2012506640A (ja) 2012-03-15
JP2012506640A5 JP2012506640A5 (enExample) 2012-12-06

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US (3) US8252653B2 (enExample)
JP (1) JP2012506640A (enExample)
KR (1) KR101553554B1 (enExample)
CN (2) CN102197483A (enExample)
TW (1) TW201025513A (enExample)
WO (1) WO2010048236A2 (enExample)

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KR20150079470A (ko) * 2013-12-30 2015-07-08 램 리써치 코포레이션 펄싱된 플라즈마 노출을 사용하여 플라즈마 강화된 원자층 증착
JP2018107379A (ja) * 2016-12-28 2018-07-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US10361076B2 (en) 2010-04-15 2019-07-23 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US10559468B2 (en) 2010-04-15 2020-02-11 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US10679848B2 (en) 2016-07-01 2020-06-09 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10741458B2 (en) 2012-11-08 2020-08-11 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US10804099B2 (en) 2014-11-24 2020-10-13 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10957514B2 (en) 2016-06-30 2021-03-23 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
JP2023501782A (ja) * 2019-11-01 2023-01-19 アプライド マテリアルズ インコーポレイテッド 表面を包む材料層
US11646198B2 (en) 2015-03-20 2023-05-09 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US12040181B2 (en) 2019-05-01 2024-07-16 Lam Research Corporation Modulated atomic layer deposition
JP2025510245A (ja) * 2022-03-22 2025-04-14 エイチピエスピ カンパニー リミテッド 半導体素子及び半導体素子の製造方法
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition

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US8643124B2 (en) 2007-05-25 2014-02-04 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8633537B2 (en) 2007-05-25 2014-01-21 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US8940645B2 (en) 2007-05-25 2015-01-27 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
US9449831B2 (en) 2007-05-25 2016-09-20 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8283265B2 (en) * 2008-12-19 2012-10-09 Varian Semiconductor Equipment Associates, Inc. Method to enhance charge trapping
US8298891B1 (en) * 2009-08-14 2012-10-30 Intermolecular, Inc. Resistive-switching memory element
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US20110256734A1 (en) 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9076646B2 (en) * 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9611544B2 (en) * 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
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