TW201025513A - Non-volatile memory having silicon nitride charge trap layer - Google Patents

Non-volatile memory having silicon nitride charge trap layer Download PDF

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Publication number
TW201025513A
TW201025513A TW098135640A TW98135640A TW201025513A TW 201025513 A TW201025513 A TW 201025513A TW 098135640 A TW098135640 A TW 098135640A TW 98135640 A TW98135640 A TW 98135640A TW 201025513 A TW201025513 A TW 201025513A
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Taiwan
Prior art keywords
layer
tantalum nitride
nitride layer
gas
nitrogen
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TW098135640A
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English (en)
Chinese (zh)
Inventor
Mihaela Balseanu
Vladimir Zubkov
Li-Qun Xia
Atif Noori
Reza Arghavani
Derek R Witty
Amir Al-Bayati
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Applied Materials Inc
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Publication of TW201025513A publication Critical patent/TW201025513A/zh

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    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
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  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
TW098135640A 2008-10-21 2009-10-21 Non-volatile memory having silicon nitride charge trap layer TW201025513A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/255,617 US8252653B2 (en) 2008-10-21 2008-10-21 Method of forming a non-volatile memory having a silicon nitride charge trap layer

Publications (1)

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TW201025513A true TW201025513A (en) 2010-07-01

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TW098135640A TW201025513A (en) 2008-10-21 2009-10-21 Non-volatile memory having silicon nitride charge trap layer

Country Status (6)

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US (3) US8252653B2 (enExample)
JP (1) JP2012506640A (enExample)
KR (1) KR101553554B1 (enExample)
CN (2) CN102197483A (enExample)
TW (1) TW201025513A (enExample)
WO (1) WO2010048236A2 (enExample)

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TWI449888B (zh) * 2011-01-12 2014-08-21 Tokyo Electron Ltd Temperature sensor, manufacturing method of temperature sensor, semiconductor device, manufacturing method of semiconductor device, and control method of semiconductor device
TWI617024B (zh) * 2011-01-25 2018-03-01 國立大學法人 東北大學 半導體裝置之製造方法及半導體裝置
TWI621215B (zh) * 2016-12-27 2018-04-11 National Taiwan Normal University 快閃記憶體結構及其製造方法

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US9449831B2 (en) 2007-05-25 2016-09-20 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
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US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
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US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
TWI534897B (zh) * 2011-01-14 2016-05-21 賽普拉斯半導體公司 具有多重氮氧化物層之氧化物-氮化物-氧化物堆疊
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CN102412253A (zh) * 2011-11-30 2012-04-11 上海华力微电子有限公司 浮体效应存储器件用soi硅片及制造方法、存储器件
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JP6538300B2 (ja) 2012-11-08 2019-07-03 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 感受性基材上にフィルムを蒸着するための方法
US20140209995A1 (en) * 2013-01-29 2014-07-31 Cheong Min Hong Non-Volatile Memory Cells Having Carbon Impurities and Related Manufacturing Methods
TWI654336B (zh) * 2013-12-30 2019-03-21 美商蘭姆研究公司 具有脈衝式電漿曝露之電漿輔助式原子層沉積
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