JP2006516823A5 - - Google Patents
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- Publication number
- JP2006516823A5 JP2006516823A5 JP2006502973A JP2006502973A JP2006516823A5 JP 2006516823 A5 JP2006516823 A5 JP 2006516823A5 JP 2006502973 A JP2006502973 A JP 2006502973A JP 2006502973 A JP2006502973 A JP 2006502973A JP 2006516823 A5 JP2006516823 A5 JP 2006516823A5
- Authority
- JP
- Japan
- Prior art keywords
- ratio
- silicon
- forming
- layer
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 20
- 229910052710 silicon Inorganic materials 0.000 claims 20
- 239000010703 silicon Substances 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 239000000376 reactant Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 3
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/353,886 | 2003-01-29 | ||
| US10/353,886 US6908852B2 (en) | 2003-01-29 | 2003-01-29 | Method of forming an arc layer for a semiconductor device |
| PCT/US2004/001924 WO2004070471A2 (en) | 2003-01-29 | 2004-01-23 | Arc layer for semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006516823A JP2006516823A (ja) | 2006-07-06 |
| JP2006516823A5 true JP2006516823A5 (enExample) | 2007-03-08 |
| JP4712686B2 JP4712686B2 (ja) | 2011-06-29 |
Family
ID=32736279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006502973A Expired - Fee Related JP4712686B2 (ja) | 2003-01-29 | 2004-01-23 | 半導体デバイス製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6908852B2 (enExample) |
| JP (1) | JP4712686B2 (enExample) |
| KR (1) | KR101085279B1 (enExample) |
| CN (1) | CN100481418C (enExample) |
| TW (1) | TW200508805A (enExample) |
| WO (1) | WO2004070471A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4186725B2 (ja) * | 2003-06-24 | 2008-11-26 | トヨタ自動車株式会社 | 光電変換素子 |
| US7271464B2 (en) * | 2004-08-24 | 2007-09-18 | Micron Technology, Inc. | Liner for shallow trench isolation |
| US7202164B2 (en) | 2004-11-19 | 2007-04-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming ultra thin silicon oxynitride for gate dielectric applications |
| US7629256B2 (en) * | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
| US20080299775A1 (en) * | 2007-06-04 | 2008-12-04 | Applied Materials, Inc. | Gapfill extension of hdp-cvd integrated process modulation sio2 process |
| US7745350B2 (en) * | 2007-09-07 | 2010-06-29 | Applied Materials, Inc. | Impurity control in HDP-CVD DEP/ETCH/DEP processes |
| US7867921B2 (en) * | 2007-09-07 | 2011-01-11 | Applied Materials, Inc. | Reduction of etch-rate drift in HDP processes |
| US7972968B2 (en) * | 2008-08-18 | 2011-07-05 | Applied Materials, Inc. | High density plasma gapfill deposition-etch-deposition process etchant |
| JP5155070B2 (ja) * | 2008-09-02 | 2013-02-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
| US20110151222A1 (en) * | 2009-12-22 | 2011-06-23 | Agc Flat Glass North America, Inc. | Anti-reflective coatings and methods of making the same |
| CN102810504A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 厚铝生长工艺方法 |
| US8497211B2 (en) | 2011-06-24 | 2013-07-30 | Applied Materials, Inc. | Integrated process modulation for PSG gapfill |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378659A (en) * | 1993-07-06 | 1995-01-03 | Motorola Inc. | Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
| JP3326663B2 (ja) * | 1994-04-05 | 2002-09-24 | ソニー株式会社 | 半導体装置の製造方法 |
| US5918147A (en) | 1995-03-29 | 1999-06-29 | Motorola, Inc. | Process for forming a semiconductor device with an antireflective layer |
| US6004850A (en) | 1998-02-23 | 1999-12-21 | Motorola Inc. | Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation |
| US6100559A (en) * | 1998-08-14 | 2000-08-08 | Advanced Micro Devices, Inc. | Multipurpose graded silicon oxynitride cap layer |
| JP4776747B2 (ja) * | 1998-11-12 | 2011-09-21 | 株式会社ハイニックスセミコンダクター | 半導体素子のコンタクト形成方法 |
-
2003
- 2003-01-29 US US10/353,886 patent/US6908852B2/en not_active Expired - Lifetime
- 2003-12-15 TW TW092135422A patent/TW200508805A/zh unknown
-
2004
- 2004-01-23 CN CNB2004800031339A patent/CN100481418C/zh not_active Expired - Fee Related
- 2004-01-23 WO PCT/US2004/001924 patent/WO2004070471A2/en not_active Ceased
- 2004-01-23 JP JP2006502973A patent/JP4712686B2/ja not_active Expired - Fee Related
- 2004-01-23 KR KR1020057013929A patent/KR101085279B1/ko not_active Expired - Fee Related