JP2008547220A5 - - Google Patents

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Publication number
JP2008547220A5
JP2008547220A5 JP2008518181A JP2008518181A JP2008547220A5 JP 2008547220 A5 JP2008547220 A5 JP 2008547220A5 JP 2008518181 A JP2008518181 A JP 2008518181A JP 2008518181 A JP2008518181 A JP 2008518181A JP 2008547220 A5 JP2008547220 A5 JP 2008547220A5
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JP
Japan
Prior art keywords
silicon oxynitride
annealing
oxynitride film
partial pressure
film
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JP2008518181A
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English (en)
Japanese (ja)
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JP2008547220A (ja
JP5072837B2 (ja
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Priority claimed from US11/167,526 external-priority patent/US7429538B2/en
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Publication of JP2008547220A publication Critical patent/JP2008547220A/ja
Publication of JP2008547220A5 publication Critical patent/JP2008547220A5/ja
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Publication of JP5072837B2 publication Critical patent/JP5072837B2/ja
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JP2008518181A 2005-06-27 2006-05-26 プラズマ窒化したゲート誘電体を２段階式で窒化後アニーリングするための改善された製造方法 Active JP5072837B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/167,526 2005-06-27
US11/167,526 US7429538B2 (en) 2005-06-27 2005-06-27 Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric
PCT/US2006/020508 WO2007001709A2 (en) 2005-06-27 2006-05-26 Improved manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric

Publications (3)

Publication Number Publication Date
JP2008547220A JP2008547220A (ja) 2008-12-25
JP2008547220A5 true JP2008547220A5 (enExample) 2011-08-11
JP5072837B2 JP5072837B2 (ja) 2012-11-14

Family

ID=37568096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518181A Active JP5072837B2 (ja) 2005-06-27 2006-05-26 プラズマ窒化したゲート誘電体を２段階式で窒化後アニーリングするための改善された製造方法

Country Status (6)

Country Link
US (1) US7429538B2 (enExample)
JP (1) JP5072837B2 (enExample)
KR (1) KR100993124B1 (enExample)
CN (1) CN101208782B (enExample)
TW (1) TWI343604B (enExample)
WO (1) WO2007001709A2 (enExample)

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US8741784B2 (en) 2011-09-20 2014-06-03 United Microelectronics Corp. Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device
US9634083B2 (en) 2012-12-10 2017-04-25 United Microelectronics Corp. Semiconductor structure and process thereof
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US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
JP2015142034A (ja) * 2014-01-29 2015-08-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN103943475A (zh) * 2014-02-21 2014-07-23 上海华力微电子有限公司 一种提高栅氧化物介电常数的方法
CN103855035A (zh) * 2014-03-27 2014-06-11 上海华力微电子有限公司 一种制备栅介质层的设备
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
US9761687B2 (en) 2015-01-04 2017-09-12 United Microelectronics Corp. Method of forming gate dielectric layer for MOS transistor
US10410857B2 (en) * 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
TWI679703B (zh) * 2016-04-25 2019-12-11 聯華電子股份有限公司 閘介電層的製造方法
US10103027B2 (en) 2016-06-20 2018-10-16 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
US10510545B2 (en) 2016-06-20 2019-12-17 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
CN109003879B (zh) * 2017-06-06 2021-03-19 中芯国际集成电路制造(上海)有限公司 栅介质层的形成方法
WO2019032457A1 (en) * 2017-08-08 2019-02-14 Applied Materials, Inc. METHODS AND APPARATUSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS
WO2021150625A1 (en) 2020-01-23 2021-07-29 Applied Materials, Inc. Method of cleaning a structure and method of depositiing a capping layer in a structure
KR20220081905A (ko) 2020-12-09 2022-06-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 증착용 실리콘 전구체
CN116197739B (zh) * 2023-05-05 2023-07-14 松诺盟科技有限公司 氢压力传感器芯体弹性体的表面处理工艺、弹性体及应用
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