JP2006114747A5 - - Google Patents

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Publication number
JP2006114747A5
JP2006114747A5 JP2004301462A JP2004301462A JP2006114747A5 JP 2006114747 A5 JP2006114747 A5 JP 2006114747A5 JP 2004301462 A JP2004301462 A JP 2004301462A JP 2004301462 A JP2004301462 A JP 2004301462A JP 2006114747 A5 JP2006114747 A5 JP 2006114747A5
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JP
Japan
Prior art keywords
manufacturing
semiconductor device
dielectric constant
high dielectric
fluorine
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JP2004301462A
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English (en)
Japanese (ja)
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JP2006114747A (ja
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Priority to JP2004301462A priority Critical patent/JP2006114747A/ja
Priority claimed from JP2004301462A external-priority patent/JP2006114747A/ja
Publication of JP2006114747A publication Critical patent/JP2006114747A/ja
Publication of JP2006114747A5 publication Critical patent/JP2006114747A5/ja
Withdrawn legal-status Critical Current

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JP2004301462A 2004-10-15 2004-10-15 半導体装置の製造方法 Withdrawn JP2006114747A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004301462A JP2006114747A (ja) 2004-10-15 2004-10-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004301462A JP2006114747A (ja) 2004-10-15 2004-10-15 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011004584A Division JP4985855B2 (ja) 2011-01-13 2011-01-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006114747A JP2006114747A (ja) 2006-04-27
JP2006114747A5 true JP2006114747A5 (enExample) 2007-11-22

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JP2004301462A Withdrawn JP2006114747A (ja) 2004-10-15 2004-10-15 半導体装置の製造方法

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JP (1) JP2006114747A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060151846A1 (en) * 2005-01-13 2006-07-13 International Business Machines Corporation Method of forming HfSiN metal for n-FET applications
JP2008078253A (ja) * 2006-09-20 2008-04-03 Sony Corp 半導体装置の製造方法
TWI435376B (zh) * 2006-09-26 2014-04-21 Applied Materials Inc 用於缺陷鈍化之高ｋ閘極堆疊的氟電漿處理
US20080135953A1 (en) 2006-12-07 2008-06-12 Infineon Technologies Ag Noise reduction in semiconductor devices
JP5380827B2 (ja) 2006-12-11 2014-01-08 ソニー株式会社 半導体装置の製造方法
KR20080110366A (ko) * 2007-06-15 2008-12-18 주식회사 동부하이텍 반도체 소자의 게이트 형성 방법
JP5286111B2 (ja) * 2009-03-09 2013-09-11 株式会社東芝 半導体装置の製造方法
US8399344B2 (en) * 2009-10-07 2013-03-19 Asm International N.V. Method for adjusting the threshold voltage of a gate stack of a PMOS device
CN104347503A (zh) * 2013-07-30 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
JP2830828B2 (ja) * 1996-03-29 1998-12-02 日本電気株式会社 半導体装置の製造方法
JPH1140803A (ja) * 1997-07-15 1999-02-12 Toshiba Corp 半導体装置及びその製造方法
JP3513018B2 (ja) * 1998-06-30 2004-03-31 株式会社東芝 半導体装置及びその製造方法
JP2002299614A (ja) * 2001-03-30 2002-10-11 Toshiba Corp Ｍｉｓ型電界効果トランジスタ及びその製造方法及び半導体記憶装置及びその製造方法
JP3778432B2 (ja) * 2002-01-23 2006-05-24 東京エレクトロン株式会社 基板処理方法および装置、半導体装置の製造装置
US6621114B1 (en) * 2002-05-20 2003-09-16 Advanced Micro Devices, Inc. MOS transistors with high-k dielectric gate insulator for reducing remote scattering
JP2004193150A (ja) * 2002-12-06 2004-07-08 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2004207560A (ja) * 2002-12-26 2004-07-22 Toshiba Corp 半導体装置およびその製造方法

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