JP2006114747A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP2006114747A
JP2006114747A JP2004301462A JP2004301462A JP2006114747A JP 2006114747 A JP2006114747 A JP 2006114747A JP 2004301462 A JP2004301462 A JP 2004301462A JP 2004301462 A JP2004301462 A JP 2004301462A JP 2006114747 A JP2006114747 A JP 2006114747A
Authority
JP
Japan
Prior art keywords
film
fluorine
semiconductor device
high dielectric
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004301462A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006114747A5 (enExample
Inventor
Takaoki Sasaki
隆興 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2004301462A priority Critical patent/JP2006114747A/ja
Publication of JP2006114747A publication Critical patent/JP2006114747A/ja
Publication of JP2006114747A5 publication Critical patent/JP2006114747A5/ja
Withdrawn legal-status Critical Current

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004301462A 2004-10-15 2004-10-15 半導体装置の製造方法 Withdrawn JP2006114747A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004301462A JP2006114747A (ja) 2004-10-15 2004-10-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004301462A JP2006114747A (ja) 2004-10-15 2004-10-15 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011004584A Division JP4985855B2 (ja) 2011-01-13 2011-01-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006114747A true JP2006114747A (ja) 2006-04-27
JP2006114747A5 JP2006114747A5 (enExample) 2007-11-22

Family

ID=36383007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004301462A Withdrawn JP2006114747A (ja) 2004-10-15 2004-10-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2006114747A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078253A (ja) * 2006-09-20 2008-04-03 Sony Corp 半導体装置の製造方法
JP2008530770A (ja) * 2005-01-13 2008-08-07 インターナショナル・ビジネス・マシーンズ・コーポレーション ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法
JP2008311661A (ja) * 2007-06-15 2008-12-25 Dongbu Hitek Co Ltd 半導体素子及びそのゲート形成方法
JP2010505281A (ja) * 2006-09-26 2010-02-18 アプライド マテリアルズ インコーポレイテッド 欠陥パシベーションのための高ｋゲート積層構造に対するフッ素プラズマ処理
JP2010212376A (ja) * 2009-03-09 2010-09-24 Toshiba Corp 半導体装置の製造方法
JP2011103459A (ja) * 2009-10-07 2011-05-26 Asm Internatl Nv Ｐｍｏｓデバイスのゲートスタックのしきい値電圧を調整する方法
US8431468B2 (en) 2006-12-07 2013-04-30 Infineon Technologies Ag Noise reduction in semiconductor devices
JP2013175769A (ja) * 2006-12-11 2013-09-05 Sony Corp 半導体装置の製造方法
CN104347503A (zh) * 2013-07-30 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
JPH09266308A (ja) * 1996-03-29 1997-10-07 Nec Corp 半導体装置の製造方法
JPH1140803A (ja) * 1997-07-15 1999-02-12 Toshiba Corp 半導体装置及びその製造方法
JP2000022139A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置及びその製造方法
JP2002299614A (ja) * 2001-03-30 2002-10-11 Toshiba Corp Ｍｉｓ型電界効果トランジスタ及びその製造方法及び半導体記憶装置及びその製造方法
JP2003218082A (ja) * 2002-01-23 2003-07-31 Tokyo Electron Ltd 基板処理方法および装置、半導体装置の製造装置
WO2003100835A2 (en) * 2002-05-20 2003-12-04 Advanced Micro Devices, Inc. Gate oxide process methods for high performance mos transistors by reducing remote scattering
JP2004193150A (ja) * 2002-12-06 2004-07-08 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2004207560A (ja) * 2002-12-26 2004-07-22 Toshiba Corp 半導体装置およびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
JPH09266308A (ja) * 1996-03-29 1997-10-07 Nec Corp 半導体装置の製造方法
JPH1140803A (ja) * 1997-07-15 1999-02-12 Toshiba Corp 半導体装置及びその製造方法
JP2000022139A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置及びその製造方法
JP2002299614A (ja) * 2001-03-30 2002-10-11 Toshiba Corp Ｍｉｓ型電界効果トランジスタ及びその製造方法及び半導体記憶装置及びその製造方法
JP2003218082A (ja) * 2002-01-23 2003-07-31 Tokyo Electron Ltd 基板処理方法および装置、半導体装置の製造装置
WO2003100835A2 (en) * 2002-05-20 2003-12-04 Advanced Micro Devices, Inc. Gate oxide process methods for high performance mos transistors by reducing remote scattering
JP2004193150A (ja) * 2002-12-06 2004-07-08 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2004207560A (ja) * 2002-12-26 2004-07-22 Toshiba Corp 半導体装置およびその製造方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008530770A (ja) * 2005-01-13 2008-08-07 インターナショナル・ビジネス・マシーンズ・コーポレーション ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法
JP2008078253A (ja) * 2006-09-20 2008-04-03 Sony Corp 半導体装置の製造方法
JP2010505281A (ja) * 2006-09-26 2010-02-18 アプライド マテリアルズ インコーポレイテッド 欠陥パシベーションのための高ｋゲート積層構造に対するフッ素プラズマ処理
US8431468B2 (en) 2006-12-07 2013-04-30 Infineon Technologies Ag Noise reduction in semiconductor devices
US11901454B2 (en) 2006-12-11 2024-02-13 Sony Group Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
US10868176B2 (en) 2006-12-11 2020-12-15 Sony Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
JP2013175769A (ja) * 2006-12-11 2013-09-05 Sony Corp 半導体装置の製造方法
US11404573B2 (en) 2006-12-11 2022-08-02 Sony Group Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
US9041058B2 (en) 2006-12-11 2015-05-26 Sony Corporation Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate process
US9419096B2 (en) 2006-12-11 2016-08-16 Sony Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
US9502529B2 (en) 2006-12-11 2016-11-22 Sony Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
US9673326B2 (en) 2006-12-11 2017-06-06 Sony Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
US9865733B2 (en) 2006-12-11 2018-01-09 Sony Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
US10128374B2 (en) 2006-12-11 2018-11-13 Sony Corporation Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
JP2008311661A (ja) * 2007-06-15 2008-12-25 Dongbu Hitek Co Ltd 半導体素子及びそのゲート形成方法
JP2010212376A (ja) * 2009-03-09 2010-09-24 Toshiba Corp 半導体装置の製造方法
JP2011103459A (ja) * 2009-10-07 2011-05-26 Asm Internatl Nv Ｐｍｏｓデバイスのゲートスタックのしきい値電圧を調整する方法
CN104347503A (zh) * 2013-07-30 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法

Similar Documents

Publication Publication Date Title
US20250287628A1 (en) Contact with a Silicide Region
US6911707B2 (en) Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance
CN100416859C (zh) 形成具有高迁移率的金属/高k值栅叠层的方法
CN1282993C (zh) 利用超薄氧扩散阻挡层防止晶体管中的横向氧化的联合方法和装置
US8889505B2 (en) Method for manufacturing semiconductor device
US9105720B2 (en) Semiconductor device having metal gate and manufacturing method thereof
JP2006108602A (ja) 半導体装置及びその製造方法
US8987095B2 (en) Method of fabricating a carbon-free dielectric layer over a carbon-doped dielectric layer
US12027424B2 (en) Semiconductor integrated circuit
US10068984B2 (en) Method of manufacturing high-k dielectric using HfO/Ti/Hfo layers
KR101027350B1 (ko) 다층의 블록킹막을 구비하는 비휘발성메모리장치 및 그제조 방법
JP4985855B2 (ja) 半導体装置の製造方法
CN106257620B (zh) 一种半导体器件及其制造方法、电子装置
JP2006114747A (ja) 半導体装置の製造方法
US20050158932A1 (en) Method of manufacturing semiconductor device
US7939396B2 (en) Base oxide engineering for high-K gate stacks
US20140035058A1 (en) Semiconductor Devices and Methods of Manufacturing the Same
JP2005079390A (ja) 半導体装置
KR100712523B1 (ko) 이종의 게이트 절연막을 가지는 반도체 소자 및 그 제조방법
KR101623462B1 (ko) 고유전율 금속 산화막을 포함하는 반도체 소자 제조 방법
JP2006073704A (ja) 半導体装置の製造方法
US12191377B2 (en) Method for forming a semiconductor structure
JP2008072001A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071009

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071009

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100727

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101116

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20110118