JP2010263132A5 - - Google Patents

Download PDF

Info

Publication number
JP2010263132A5
JP2010263132A5 JP2009114109A JP2009114109A JP2010263132A5 JP 2010263132 A5 JP2010263132 A5 JP 2010263132A5 JP 2009114109 A JP2009114109 A JP 2009114109A JP 2009114109 A JP2009114109 A JP 2009114109A JP 2010263132 A5 JP2010263132 A5 JP 2010263132A5
Authority
JP
Japan
Prior art keywords
dry etching
film
gas
etching method
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009114109A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010263132A (ja
JP5250476B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009114109A priority Critical patent/JP5250476B2/ja
Priority claimed from JP2009114109A external-priority patent/JP5250476B2/ja
Priority to TW098124871A priority patent/TWI404140B/zh
Priority to KR1020090069302A priority patent/KR101044427B1/ko
Priority to US12/512,103 priority patent/US7989330B2/en
Publication of JP2010263132A publication Critical patent/JP2010263132A/ja
Publication of JP2010263132A5 publication Critical patent/JP2010263132A5/ja
Application granted granted Critical
Publication of JP5250476B2 publication Critical patent/JP5250476B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009114109A 2009-05-11 2009-05-11 ドライエッチング方法 Active JP5250476B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009114109A JP5250476B2 (ja) 2009-05-11 2009-05-11 ドライエッチング方法
TW098124871A TWI404140B (zh) 2009-05-11 2009-07-23 乾蝕刻方法
KR1020090069302A KR101044427B1 (ko) 2009-05-11 2009-07-29 드라이 에칭방법
US12/512,103 US7989330B2 (en) 2009-05-11 2009-07-30 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009114109A JP5250476B2 (ja) 2009-05-11 2009-05-11 ドライエッチング方法

Publications (3)

Publication Number Publication Date
JP2010263132A JP2010263132A (ja) 2010-11-18
JP2010263132A5 true JP2010263132A5 (enExample) 2012-12-13
JP5250476B2 JP5250476B2 (ja) 2013-07-31

Family

ID=43062575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009114109A Active JP5250476B2 (ja) 2009-05-11 2009-05-11 ドライエッチング方法

Country Status (4)

Country Link
US (1) US7989330B2 (enExample)
JP (1) JP5250476B2 (enExample)
KR (1) KR101044427B1 (enExample)
TW (1) TWI404140B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6007754B2 (ja) * 2012-11-27 2016-10-12 三菱電機株式会社 配線構造の製造方法
CN104241088B (zh) * 2013-06-09 2017-07-14 中芯国际集成电路制造(上海)有限公司 条形结构的形成方法
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
US10840105B2 (en) 2015-06-15 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure with insulating structure and method for manufacturing the same
JP7061941B2 (ja) * 2018-08-06 2022-05-02 東京エレクトロン株式会社 エッチング方法及び半導体デバイスの製造方法
US11915933B2 (en) * 2020-09-18 2024-02-27 Changxin Memory Technologies, Inc. Manufacturing method of semiconductor structure
US12119226B2 (en) * 2021-03-29 2024-10-15 Changxin Memory Technologies, Inc. Method for manufacturing mask structure, semiconductor structure and manufacturing method thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3662275B2 (ja) * 1994-07-13 2005-06-22 ソニー株式会社 ドライエッチング方法
US5767018A (en) * 1995-11-08 1998-06-16 Advanced Micro Devices, Inc. Method of etching a polysilicon pattern
JPH10303183A (ja) * 1997-04-28 1998-11-13 Sony Corp パターンの形成方法
US6071822A (en) * 1998-06-08 2000-06-06 Plasma-Therm, Inc. Etching process for producing substantially undercut free silicon on insulator structures
JP2000091318A (ja) * 1998-09-09 2000-03-31 Fujitsu Ltd 半導体装置の製造方法
JP2000277494A (ja) * 1999-03-26 2000-10-06 Sony Corp 有機系反射防止膜のエッチング方法および半導体装置の製造方法
US20040209468A1 (en) * 2003-04-17 2004-10-21 Applied Materials Inc. Method for fabricating a gate structure of a field effect transistor
US6955964B2 (en) * 2003-11-05 2005-10-18 Promos Technologies, Inc. Formation of a double gate structure
US7163880B2 (en) * 2004-06-02 2007-01-16 Texas Instruments Incorporated Gate stack and gate stack etch sequence for metal gate integration
KR100616193B1 (ko) * 2004-09-15 2006-08-25 에스티마이크로일렉트로닉스 엔.브이. 비휘발성 메모리 소자의 게이트 전극 형성방법
US7208424B2 (en) * 2004-09-17 2007-04-24 Freescale Semiconductor, Inc. Method of forming a semiconductor device having a metal layer
JP4849881B2 (ja) * 2005-12-08 2012-01-11 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP4865373B2 (ja) * 2006-03-17 2012-02-01 株式会社日立ハイテクノロジーズ ドライエッチング方法
US8183161B2 (en) * 2006-09-12 2012-05-22 Tokyo Electron Limited Method and system for dry etching a hafnium containing material
US7815814B2 (en) * 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
JP5223364B2 (ja) * 2008-02-07 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法及び記憶媒体
JP5547878B2 (ja) * 2008-06-30 2014-07-16 株式会社日立ハイテクノロジーズ 半導体加工方法
JP5579374B2 (ja) * 2008-07-16 2014-08-27 株式会社日立ハイテクノロジーズ 半導体加工方法
JP2010199126A (ja) * 2009-02-23 2010-09-09 Panasonic Corp プラズマ処理方法およびプラズマ処理装置

Similar Documents

Publication Publication Date Title
TWI579892B (zh) 用以形成具有多膜層的間隔壁之蝕刻方法
JP2010263132A5 (enExample)
TWI541062B (zh) 乾式剝離硼－碳膜的方法
JP2014209622A5 (enExample)
JP2015533029A5 (enExample)
JP2014017406A5 (enExample)
JP2017045869A5 (enExample)
JP2012023356A5 (enExample)
WO2013052712A3 (en) Selective etch of silicon by way of metastable hydrogen termination
JP2013118359A5 (enExample)
WO2010141257A3 (en) Method and apparatus for etching
JP2008060565A5 (enExample)
WO2016068004A1 (ja) プラズマエッチング方法
JP2009152243A (ja) 半導体装置の製造方法
TW200839847A (en) Method for fabricating semiconductor device
JP2013131587A5 (enExample)
WO2017087410A3 (en) Etching method for a structure pattern layer having a first material and second material
TWI404140B (zh) 乾蝕刻方法
CN102779728A (zh) 利用脉冲式无氟碳化合物等离子体的沟槽蚀刻方法
CN108198745A (zh) 源漏极成膜前处理方法
CN103839795B (zh) 浮栅的制作方法和浮栅晶体管的制作方法
Lee et al. Etch characteristics of MgO thin films in Cl2/Ar, CH3OH/Ar and CH4/Ar plasmas
JP2006148122A (ja) 半導体基板上の金属構造から残留物を除去するための方法
JP2010098101A (ja) 半導体装置の製造方法
CN105304480A (zh) 锗的干法刻蚀方法