KR101044427B1 - 드라이 에칭방법 - Google Patents

드라이 에칭방법 Download PDF

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Publication number
KR101044427B1
KR101044427B1 KR1020090069302A KR20090069302A KR101044427B1 KR 101044427 B1 KR101044427 B1 KR 101044427B1 KR 1020090069302 A KR1020090069302 A KR 1020090069302A KR 20090069302 A KR20090069302 A KR 20090069302A KR 101044427 B1 KR101044427 B1 KR 101044427B1
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South Korea
Prior art keywords
etching
film
polysilicon film
gas
carbon polymer
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English (en)
Korean (ko)
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KR20100122039A (ko
Inventor
다케시 시마
겐이치 구와바라
도모요시 이치마루
겐지 이마모토
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020090069302A 2009-05-11 2009-07-29 드라이 에칭방법 Active KR101044427B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009114109A JP5250476B2 (ja) 2009-05-11 2009-05-11 ドライエッチング方法
JPJP-P-2009-114109 2009-05-11

Publications (2)

Publication Number Publication Date
KR20100122039A KR20100122039A (ko) 2010-11-19
KR101044427B1 true KR101044427B1 (ko) 2011-06-27

Family

ID=43062575

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090069302A Active KR101044427B1 (ko) 2009-05-11 2009-07-29 드라이 에칭방법

Country Status (4)

Country Link
US (1) US7989330B2 (enExample)
JP (1) JP5250476B2 (enExample)
KR (1) KR101044427B1 (enExample)
TW (1) TWI404140B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10840105B2 (en) 2015-06-15 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure with insulating structure and method for manufacturing the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6007754B2 (ja) * 2012-11-27 2016-10-12 三菱電機株式会社 配線構造の製造方法
CN104241088B (zh) * 2013-06-09 2017-07-14 中芯国际集成电路制造(上海)有限公司 条形结构的形成方法
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
JP7061941B2 (ja) * 2018-08-06 2022-05-02 東京エレクトロン株式会社 エッチング方法及び半導体デバイスの製造方法
US11915933B2 (en) * 2020-09-18 2024-02-27 Changxin Memory Technologies, Inc. Manufacturing method of semiconductor structure
US12119226B2 (en) * 2021-03-29 2024-10-15 Changxin Memory Technologies, Inc. Method for manufacturing mask structure, semiconductor structure and manufacturing method thereof
JP2024542631A (ja) * 2021-12-08 2024-11-15 東京エレクトロン株式会社 モリブデンをエッチングする方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831801A (ja) * 1994-07-13 1996-02-02 Sony Corp ドライエッチング方法
KR20040090931A (ko) * 2003-04-17 2004-10-27 어플라이드 머티어리얼스, 인코포레이티드 전계효과 트랜지스터의 게이트 구조를 제조하는 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767018A (en) * 1995-11-08 1998-06-16 Advanced Micro Devices, Inc. Method of etching a polysilicon pattern
JPH10303183A (ja) * 1997-04-28 1998-11-13 Sony Corp パターンの形成方法
US6071822A (en) * 1998-06-08 2000-06-06 Plasma-Therm, Inc. Etching process for producing substantially undercut free silicon on insulator structures
JP2000091318A (ja) * 1998-09-09 2000-03-31 Fujitsu Ltd 半導体装置の製造方法
JP2000277494A (ja) * 1999-03-26 2000-10-06 Sony Corp 有機系反射防止膜のエッチング方法および半導体装置の製造方法
US6955964B2 (en) * 2003-11-05 2005-10-18 Promos Technologies, Inc. Formation of a double gate structure
US7163880B2 (en) * 2004-06-02 2007-01-16 Texas Instruments Incorporated Gate stack and gate stack etch sequence for metal gate integration
KR100616193B1 (ko) * 2004-09-15 2006-08-25 에스티마이크로일렉트로닉스 엔.브이. 비휘발성 메모리 소자의 게이트 전극 형성방법
US7208424B2 (en) * 2004-09-17 2007-04-24 Freescale Semiconductor, Inc. Method of forming a semiconductor device having a metal layer
JP4849881B2 (ja) * 2005-12-08 2012-01-11 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP4865373B2 (ja) * 2006-03-17 2012-02-01 株式会社日立ハイテクノロジーズ ドライエッチング方法
US8183161B2 (en) * 2006-09-12 2012-05-22 Tokyo Electron Limited Method and system for dry etching a hafnium containing material
US7815814B2 (en) * 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
JP5223364B2 (ja) * 2008-02-07 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法及び記憶媒体
JP5547878B2 (ja) * 2008-06-30 2014-07-16 株式会社日立ハイテクノロジーズ 半導体加工方法
JP5579374B2 (ja) * 2008-07-16 2014-08-27 株式会社日立ハイテクノロジーズ 半導体加工方法
JP2010199126A (ja) * 2009-02-23 2010-09-09 Panasonic Corp プラズマ処理方法およびプラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831801A (ja) * 1994-07-13 1996-02-02 Sony Corp ドライエッチング方法
KR20040090931A (ko) * 2003-04-17 2004-10-27 어플라이드 머티어리얼스, 인코포레이티드 전계효과 트랜지스터의 게이트 구조를 제조하는 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10840105B2 (en) 2015-06-15 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure with insulating structure and method for manufacturing the same

Also Published As

Publication number Publication date
KR20100122039A (ko) 2010-11-19
US7989330B2 (en) 2011-08-02
TW201041031A (en) 2010-11-16
JP5250476B2 (ja) 2013-07-31
JP2010263132A (ja) 2010-11-18
TWI404140B (zh) 2013-08-01
US20100285669A1 (en) 2010-11-11

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