JP2010263132A - ドライエッチング方法 - Google Patents
ドライエッチング方法 Download PDFInfo
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- JP2010263132A JP2010263132A JP2009114109A JP2009114109A JP2010263132A JP 2010263132 A JP2010263132 A JP 2010263132A JP 2009114109 A JP2009114109 A JP 2009114109A JP 2009114109 A JP2009114109 A JP 2009114109A JP 2010263132 A JP2010263132 A JP 2010263132A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001312 dry etching Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 41
- 229920005591 polysilicon Polymers 0.000 claims abstract description 41
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229920000642 polymer Polymers 0.000 claims abstract description 28
- 230000001681 protective effect Effects 0.000 claims abstract description 25
- 239000007769 metal material Substances 0.000 claims abstract description 20
- 238000004380 ashing Methods 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 8
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 5
- 150000002367 halogens Chemical class 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 238000007788 roughening Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000007790 scraping Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- -1 CH 4 Chemical compound 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】ポリシリコン膜105をエッチングした後に、カーボンを含むプラズマによりポリシリコン膜105の側壁にカーボンポリマの保護膜107を形成させることで、ウェハの高温化や処理圧力の低圧力化により揮発性をあげたエッチング条件下で、ハロゲン系ガスのプラズマにより下層膜である金属材料104のエッチング処理を行っても、ポリシリコン膜105のサイドエッチ及び側壁荒れを防止することができる。また、このカーボンポリマによる保護膜107により、金属材料104をエッチングする際に飛散した金属物質はポリシリコン膜105に直接付着することなく、アッシング工程によりカーボンポリマの保護壁107とともに簡単に取り除くことができる。
【選択図】図1(c)
Description
102 ゲート絶縁膜(SiO2膜)
103 高誘電体ゲート絶縁膜(HfO2)
104 金属膜(TiN膜)
105 ポリシリコン膜
106 ハードマスク(SiO2膜)
107 保護膜
108 飛散金属物質(TiN)
Claims (4)
- 半導体基板上に形成された金属/高誘電体ゲート構造のドライエッチング方法において、
ポリシリコン膜をエッチングする工程と、カーボンを含むプラズマによりポリシリコン膜の側壁にカーボンポリマの保護膜を形成させる工程と、ハロゲン系ガスのプラズマによりポリシリコン膜の下層膜である金属材料のエッチング処理を行う工程と、該エッチング処理後に飛散した金属物質とともにカーボンポリマの保護壁を除去するアッシング工程とを具備したことを特徴とするドライエッチング方法。 - 請求項1記載のドライエッチング方法において、
前記カーボンポリマの保護膜を形成させる工程は、エッチングガスとして、CHF3:100ml/minを使用し、処理室内圧力を0.3Paに保ちウェハ温度は40℃としたことを特徴とするドライエッチング方法。 - 請求項1記載のドライエッチング方法において、
前記カーボンポリマの保護膜を形成させる工程は、エッチングガスとして、CHF3,CH4,C2H6,CH2F2,CF4,C4F8,C3F6,C3F8,CH3OH,COの少なくとも一つを含むガス、または、これらのうち2つ以上を混合した混合ガス、または、これらのうち少なくとも一つを含むガスにAr,He,O2,N2,HBr,Cl2、等のいずれかの添加ガスを混合したガスを使用することを特徴とするドライエッチング方法。 - 請求項1記載のドライエッチング方法において、
前記アッシング工程は、エッチング処理後に装置内のアッシング処理室、または別のアッシング装置で行うことを特徴とするドライエッチング方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009114109A JP5250476B2 (ja) | 2009-05-11 | 2009-05-11 | ドライエッチング方法 |
TW098124871A TWI404140B (zh) | 2009-05-11 | 2009-07-23 | 乾蝕刻方法 |
KR1020090069302A KR101044427B1 (ko) | 2009-05-11 | 2009-07-29 | 드라이 에칭방법 |
US12/512,103 US7989330B2 (en) | 2009-05-11 | 2009-07-30 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009114109A JP5250476B2 (ja) | 2009-05-11 | 2009-05-11 | ドライエッチング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010263132A true JP2010263132A (ja) | 2010-11-18 |
JP2010263132A5 JP2010263132A5 (ja) | 2012-12-13 |
JP5250476B2 JP5250476B2 (ja) | 2013-07-31 |
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JP2009114109A Active JP5250476B2 (ja) | 2009-05-11 | 2009-05-11 | ドライエッチング方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7989330B2 (ja) |
JP (1) | JP5250476B2 (ja) |
KR (1) | KR101044427B1 (ja) |
TW (1) | TWI404140B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014107404A (ja) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | 配線構造の製造方法 |
JP2015119099A (ja) * | 2013-12-19 | 2015-06-25 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104241088B (zh) * | 2013-06-09 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 条形结构的形成方法 |
US10840105B2 (en) | 2015-06-15 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate structure with insulating structure and method for manufacturing the same |
JP7061941B2 (ja) * | 2018-08-06 | 2022-05-02 | 東京エレクトロン株式会社 | エッチング方法及び半導体デバイスの製造方法 |
US11915933B2 (en) * | 2020-09-18 | 2024-02-27 | Changxin Memory Technologies, Inc. | Manufacturing method of semiconductor structure |
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JPH0831801A (ja) * | 1994-07-13 | 1996-02-02 | Sony Corp | ドライエッチング方法 |
JPH10303183A (ja) * | 1997-04-28 | 1998-11-13 | Sony Corp | パターンの形成方法 |
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2009
- 2009-05-11 JP JP2009114109A patent/JP5250476B2/ja active Active
- 2009-07-23 TW TW098124871A patent/TWI404140B/zh active
- 2009-07-29 KR KR1020090069302A patent/KR101044427B1/ko active IP Right Grant
- 2009-07-30 US US12/512,103 patent/US7989330B2/en active Active
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JPH0831801A (ja) * | 1994-07-13 | 1996-02-02 | Sony Corp | ドライエッチング方法 |
JPH10303183A (ja) * | 1997-04-28 | 1998-11-13 | Sony Corp | パターンの形成方法 |
JP2002518825A (ja) * | 1998-06-08 | 2002-06-25 | ユナキス ユーエスエー インク. | 実質的にアンダカットのないシリコンを絶縁体構造上に作製するエッチング工程 |
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JP2008244479A (ja) * | 2007-03-23 | 2008-10-09 | Tokyo Electron Ltd | 金属窒化物を乾式エッチングする方法及びシステム |
JP2009188256A (ja) * | 2008-02-07 | 2009-08-20 | Tokyo Electron Ltd | プラズマエッチング方法及び記憶媒体 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014107404A (ja) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | 配線構造の製造方法 |
JP2015119099A (ja) * | 2013-12-19 | 2015-06-25 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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KR101044427B1 (ko) | 2011-06-27 |
JP5250476B2 (ja) | 2013-07-31 |
TW201041031A (en) | 2010-11-16 |
TWI404140B (zh) | 2013-08-01 |
US20100285669A1 (en) | 2010-11-11 |
KR20100122039A (ko) | 2010-11-19 |
US7989330B2 (en) | 2011-08-02 |
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