JP2010010573A - 半導体加工方法 - Google Patents
半導体加工方法 Download PDFInfo
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- JP2010010573A JP2010010573A JP2008170629A JP2008170629A JP2010010573A JP 2010010573 A JP2010010573 A JP 2010010573A JP 2008170629 A JP2008170629 A JP 2008170629A JP 2008170629 A JP2008170629 A JP 2008170629A JP 2010010573 A JP2010010573 A JP 2010010573A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000003672 processing method Methods 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000001257 hydrogen Substances 0.000 claims abstract description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 5
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 46
- 238000012545 processing Methods 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- 230000006837 decompression Effects 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 5
- 238000004435 EPR spectroscopy Methods 0.000 description 4
- -1 TaSiN Chemical class 0.000 description 3
- 229910004200 TaSiN Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
【解決手段】半導体基板101上に形成されたHfあるいはZrを含む絶縁膜102、該絶縁膜上に形成されたTiあるいはTaあるいはRuを含む導体膜103を有し、該導電膜上に形成したレジスト107を用いて、プラズマ雰囲気中で前記導電膜を加工する半導体加工方法において、前記レジスト107を、水素を含み酸素を含まないガスのプラズマ雰囲気中で除去する。
【選択図】図1
Description
図5、6は、第2の実施形態を説明する図である。この例では、水素プラズマによるレジスト除去に際して、シリコン基板(ウエハ)にバイアスを印加することにより処理速度を向上している。
酸素を用いないでレジストを除去するには、前記特許文献1に記載されている方法、すなわち水素原子あるいは水素分子の中性ラジカルを用いる方法がある。しかし、この方法はプラズマを用いる方法よりレジスト除去能力が低く、メタルゲート加工後のレジスト除去では、残渣が出やすくなる。
102 HfSiON膜
103 TiN膜
104 W膜
105 SiN膜
106 反射防止膜
107 レジスト
108 水素イオン
201 プラズマ電源
202 アンテナ
203 窓
204 真空チャンバ
205 試料台
206 ウエハ
207 バイアス電源
208 電磁コイル
301 酸素イオン
302 酸化層
601 TaSiN膜
602 堆積物
701 poly−Si膜
Claims (10)
- 半導体基板上に形成されたHfあるいはZrを含む絶縁膜、該絶縁膜上に形成されたTiあるいはTaあるいはRuを含む導体膜を有し、該導電膜上に形成したレジストを用いて、プラズマ雰囲気中で前記導電膜を加工する半導体加工方法において、
前記レジストを、水素を含み酸素を含まないガスのプラズマ雰囲気中で除去することを特徴とする半導体加工方法。 - 請求項1記載の半導体加工方法において、
前記水素を含み酸素を含まないガスは、H2、H2と希ガスの混合ガス、NH3、H2とN2とハロゲンとの混合ガスの何れかであることを特徴とする半導体加工方法。 - 請求項1記載の半導体加工方法において、
前記水素を含み酸素を含まないガスは、H2、H2と希ガスの混合ガス、NH3、H2とN2にCF4あるいはCHF3あるいはSF6あるいはNF3を混合したガスの何れかであることを特徴とする半導体加工方法。 - 請求項1記載の半導体加工方法において、
前記導電膜は仕事関数制御金属からなり、前記導電膜上にはWからなる電極層を備えることを特徴とする半導体加工方法。 - 請求項1記載の半導体加工方法において、
レジストを用いて加工する前記導電膜の最小寸法は65nm以下であることを特徴とする半導体加工方法。 - 請求項1記載の半導体加工方法において、
前記半導体基板に、該半導体基板に向けてプラズマ中のイオンを加速するためのバイアス電圧を印加することを特徴とする半導体加工方法。 - 請求項6記載の半導体加工方法において、
前記バイアス電圧の振幅は1500V以下であることを特徴とする半導体加工方法。 - 請求項1記載の半導体加工方法において、
レジストの除去行程におけるウエハ温度は200℃以下であることを特徴とする半導体加工方法。 - 減圧処理室と、該減圧処理室に処理ガスを供給するガス供給手段と、前記減圧処理室内に、半導体基板を載置して保持する試料台と、前記減圧処理室に供給された処理ガスに高周波エネルギを供給してプラズマを生成するプラズマ生成手段を備え、生成したプラズマにより前記半導体基板にプラズマエッチング処理を施す半導体加工方法であって
前記試料台上に、HfあるいはZrを含む高誘電率絶縁膜、TiあるいはTaあるいはRuを含む仕事関数制御金属導体膜、およびレジストを順次形成した半導体基板を載置し前記レジストを用いて前記導体膜を加工したのち、前記処理ガスとして、水素を含み酸素を含まないガス供給した状態で処理室内にプラズマを生成して、前記レジストを除去することを特徴とする半導体加工方法。 - 減圧処理室と、該減圧処理室に処理ガスを供給するガス供給手段と、前記減圧処理室内に、半導体基板を載置して保持する試料台と、前記減圧処理室に供給された処理ガスに高周波エネルギを供給してプラズマを生成するプラズマ生成手段を備え、生成したプラズマにより前記半導体基板にプラズマエッチング処理を施す半導体加工方法であって
前記試料台上に、HfあるいはZrを含む高誘電率絶縁膜、TiあるいはTaあるいはRuを含む仕事関数制御金属導体膜、およびレジストを順次形成した半導体基板を載置し前記レジストを用いて前記導体膜を加工したのち、前記処理ガスとして、水素を含み酸素を含まないガス供給し、かつ前記試料台に基板バイアスを印加した状態で処理室内にプラズマを生成して、前記レジストを除去することを特徴とする半導体加工方法。
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JP2008170629A JP5547878B2 (ja) | 2008-06-30 | 2008-06-30 | 半導体加工方法 |
TW097129876A TWI485771B (zh) | 2008-06-30 | 2008-08-06 | Semiconductor processing methods |
KR1020080080484A KR100981041B1 (ko) | 2008-06-30 | 2008-08-18 | 반도체 가공방법 |
US12/198,222 US8440513B2 (en) | 2008-06-30 | 2008-08-26 | Method of semiconductor processing |
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JP2014081175A Division JP2014131086A (ja) | 2014-04-10 | 2014-04-10 | プラズマ処理方法 |
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JP2010263132A (ja) * | 2009-05-11 | 2010-11-18 | Hitachi High-Technologies Corp | ドライエッチング方法 |
JP2013207009A (ja) * | 2012-03-28 | 2013-10-07 | Shibaura Mechatronics Corp | Euvマスク製造方法およびeuvマスク製造装置 |
WO2019123852A1 (ja) * | 2017-12-22 | 2019-06-27 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
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JP2014212310A (ja) * | 2013-04-02 | 2014-11-13 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法及び製造装置 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010263132A (ja) * | 2009-05-11 | 2010-11-18 | Hitachi High-Technologies Corp | ドライエッチング方法 |
JP2013207009A (ja) * | 2012-03-28 | 2013-10-07 | Shibaura Mechatronics Corp | Euvマスク製造方法およびeuvマスク製造装置 |
WO2019123852A1 (ja) * | 2017-12-22 | 2019-06-27 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP2019114654A (ja) * | 2017-12-22 | 2019-07-11 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP7033912B2 (ja) | 2017-12-22 | 2022-03-11 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
Also Published As
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TW201001535A (en) | 2010-01-01 |
KR100981041B1 (ko) | 2010-09-08 |
TWI485771B (zh) | 2015-05-21 |
JP5547878B2 (ja) | 2014-07-16 |
US20090325388A1 (en) | 2009-12-31 |
KR20100003148A (ko) | 2010-01-07 |
US8440513B2 (en) | 2013-05-14 |
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