JP4865373B2 - ドライエッチング方法 - Google Patents
ドライエッチング方法 Download PDFInfo
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- JP4865373B2 JP4865373B2 JP2006074020A JP2006074020A JP4865373B2 JP 4865373 B2 JP4865373 B2 JP 4865373B2 JP 2006074020 A JP2006074020 A JP 2006074020A JP 2006074020 A JP2006074020 A JP 2006074020A JP 4865373 B2 JP4865373 B2 JP 4865373B2
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- Prior art keywords
- gas
- etching
- polysilicon film
- dry etching
- oxide film
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 56
- 238000001312 dry etching Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims description 64
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 36
- 229920005591 polysilicon Polymers 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 44
- 150000002500 ions Chemical class 0.000 description 30
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910001502 inorganic halide Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
2005年 ドライプロセス インターナショナルシンポジウム(2005 Dry Process International Symposium)、10‐16項、271〜272ページ
Claims (2)
- 半導体基板上にゲート酸化膜とポリシリコン膜を形成したゲート配線層の前記ポリシリコン膜をメインエッチング処理した後、該メインエッチング後に残ったポリシリコン膜の追加エッチングであるオーバーエッチング処理を行うことによりゲート配線を加工するドライエッチング方法において、
前記メインエッチング処理は、前記ゲート酸化膜の表面の露出が始まる時点までHBrガスとO 2 ガスとCl 2 ガスとを含むエッチングガスを用いて前記ポリシリコン膜をエッチングし、
前記オーバーエッチング処理は、HBrガスを含むエッチングガスに、炭素原子を含む一般式がCxHyで表されるガスもしくはCO、CO2ガスのうち少なくとも1つ以上を添加した配合ガスを用いて前記メインエッチング処理後に残ったポリシリコン膜をエッチングすることを特徴とするドライエッチング方法。 - 請求項1記載のドライエッチング方法において、
前記CxHyで表されるガスがCH4 ガスであることを特徴とするドライエッチング方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006074020A JP4865373B2 (ja) | 2006-03-17 | 2006-03-17 | ドライエッチング方法 |
TW095130464A TW200737341A (en) | 2006-03-17 | 2006-08-18 | Dry etching method |
KR1020060078760A KR100848362B1 (ko) | 2006-03-17 | 2006-08-21 | 드라이 에칭방법 |
US11/509,736 US20070218696A1 (en) | 2006-03-17 | 2006-08-25 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006074020A JP4865373B2 (ja) | 2006-03-17 | 2006-03-17 | ドライエッチング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007250940A JP2007250940A (ja) | 2007-09-27 |
JP2007250940A5 JP2007250940A5 (ja) | 2009-02-12 |
JP4865373B2 true JP4865373B2 (ja) | 2012-02-01 |
Family
ID=38518454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006074020A Expired - Fee Related JP4865373B2 (ja) | 2006-03-17 | 2006-03-17 | ドライエッチング方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070218696A1 (ja) |
JP (1) | JP4865373B2 (ja) |
KR (1) | KR100848362B1 (ja) |
TW (1) | TW200737341A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5250476B2 (ja) | 2009-05-11 | 2013-07-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
CN102376553B (zh) * | 2010-08-05 | 2013-06-12 | 中芯国际集成电路制造(上海)有限公司 | 一种栅极刻蚀方法 |
KR101623654B1 (ko) * | 2014-11-25 | 2016-05-23 | 아주대학교산학협력단 | 플라즈마 가스를 사용한 실리콘 기판 식각방법 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US5208180A (en) * | 1992-03-04 | 1993-05-04 | Micron Technology, Inc. | Method of forming a capacitor |
US5439833A (en) * | 1994-03-15 | 1995-08-08 | National Semiconductor Corp. | Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance |
JPH08115900A (ja) * | 1994-10-18 | 1996-05-07 | Sony Corp | シリコン系材料層のパターニング方法 |
JP3371180B2 (ja) * | 1995-06-09 | 2003-01-27 | ソニー株式会社 | 配線形成方法 |
KR100230981B1 (ko) * | 1996-05-08 | 1999-11-15 | 김광호 | 반도체장치 제조공정의 플라즈마 식각 방법 |
US6479373B2 (en) * | 1997-02-20 | 2002-11-12 | Infineon Technologies Ag | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases |
US6322714B1 (en) * | 1997-11-12 | 2001-11-27 | Applied Materials Inc. | Process for etching silicon-containing material on substrates |
US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
US6074952A (en) * | 1998-05-07 | 2000-06-13 | Vanguard International Semiconductor Corporation | Method for forming multi-level contacts |
US6143611A (en) * | 1998-07-30 | 2000-11-07 | Micron Technology, Inc. | Semiconductor processing methods, methods of forming electronic components, and transistors |
JP2000252259A (ja) * | 1999-02-25 | 2000-09-14 | Sony Corp | ドライエッチング方法及び半導体装置の製造方法 |
US6583065B1 (en) * | 1999-08-03 | 2003-06-24 | Applied Materials Inc. | Sidewall polymer forming gas additives for etching processes |
US6235643B1 (en) * | 1999-08-10 | 2001-05-22 | Applied Materials, Inc. | Method for etching a trench having rounded top and bottom corners in a silicon substrate |
US6261967B1 (en) * | 2000-02-09 | 2001-07-17 | Infineon Technologies North America Corp. | Easy to remove hard mask layer for semiconductor device fabrication |
JP2001237415A (ja) * | 2000-02-21 | 2001-08-31 | Nec Corp | 半導体装置の製造方法 |
US6670278B2 (en) * | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
JP2003077838A (ja) * | 2001-08-30 | 2003-03-14 | Toshiba Corp | 半導体製造装置のドライクリーニング時期判定システム、半導体製造装置のドライクリーニング方法、半導体製造装置のドライクリーニングシステム及び半導体装置の製造方法 |
US6528418B1 (en) * | 2001-09-20 | 2003-03-04 | Hynix Semiconductor Inc. | Manufacturing method for semiconductor device |
US6921723B1 (en) * | 2002-04-23 | 2005-07-26 | Applied Materials, Inc. | Etching method having high silicon-to-photoresist selectivity |
US6716570B2 (en) * | 2002-05-23 | 2004-04-06 | Institute Of Microelectronics | Low temperature resist trimming process |
US20040018739A1 (en) * | 2002-07-26 | 2004-01-29 | Applied Materials, Inc. | Methods for etching using building blocks |
US7141505B2 (en) * | 2003-06-27 | 2006-11-28 | Lam Research Corporation | Method for bilayer resist plasma etch |
US7344965B2 (en) * | 2003-12-10 | 2008-03-18 | International Business Machines Corporation | Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gaseous additions |
US7012027B2 (en) * | 2004-01-27 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zirconium oxide and hafnium oxide etching using halogen containing chemicals |
JP4723871B2 (ja) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置 |
US7109085B2 (en) * | 2005-01-11 | 2006-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching process to avoid polysilicon notching |
-
2006
- 2006-03-17 JP JP2006074020A patent/JP4865373B2/ja not_active Expired - Fee Related
- 2006-08-18 TW TW095130464A patent/TW200737341A/zh not_active IP Right Cessation
- 2006-08-21 KR KR1020060078760A patent/KR100848362B1/ko not_active IP Right Cessation
- 2006-08-25 US US11/509,736 patent/US20070218696A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI360176B (ja) | 2012-03-11 |
KR20070094434A (ko) | 2007-09-20 |
KR100848362B1 (ko) | 2008-07-24 |
US20070218696A1 (en) | 2007-09-20 |
JP2007250940A (ja) | 2007-09-27 |
TW200737341A (en) | 2007-10-01 |
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