TW200737341A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- TW200737341A TW200737341A TW095130464A TW95130464A TW200737341A TW 200737341 A TW200737341 A TW 200737341A TW 095130464 A TW095130464 A TW 095130464A TW 95130464 A TW95130464 A TW 95130464A TW 200737341 A TW200737341 A TW 200737341A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- overetching
- dry etching
- etching method
- provides
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 6
- 238000001312 dry etching Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006074020A JP4865373B2 (ja) | 2006-03-17 | 2006-03-17 | ドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200737341A true TW200737341A (en) | 2007-10-01 |
TWI360176B TWI360176B (zh) | 2012-03-11 |
Family
ID=38518454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095130464A TW200737341A (en) | 2006-03-17 | 2006-08-18 | Dry etching method |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070218696A1 (zh) |
JP (1) | JP4865373B2 (zh) |
KR (1) | KR100848362B1 (zh) |
TW (1) | TW200737341A (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5250476B2 (ja) * | 2009-05-11 | 2013-07-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
CN102376553B (zh) * | 2010-08-05 | 2013-06-12 | 中芯国际集成电路制造(上海)有限公司 | 一种栅极刻蚀方法 |
KR101623654B1 (ko) * | 2014-11-25 | 2016-05-23 | 아주대학교산학협력단 | 플라즈마 가스를 사용한 실리콘 기판 식각방법 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US5208180A (en) * | 1992-03-04 | 1993-05-04 | Micron Technology, Inc. | Method of forming a capacitor |
US5439833A (en) * | 1994-03-15 | 1995-08-08 | National Semiconductor Corp. | Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance |
JPH08115900A (ja) * | 1994-10-18 | 1996-05-07 | Sony Corp | シリコン系材料層のパターニング方法 |
JP3371180B2 (ja) * | 1995-06-09 | 2003-01-27 | ソニー株式会社 | 配線形成方法 |
KR100230981B1 (ko) * | 1996-05-08 | 1999-11-15 | 김광호 | 반도체장치 제조공정의 플라즈마 식각 방법 |
US6479373B2 (en) * | 1997-02-20 | 2002-11-12 | Infineon Technologies Ag | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases |
US6322714B1 (en) * | 1997-11-12 | 2001-11-27 | Applied Materials Inc. | Process for etching silicon-containing material on substrates |
US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
US6074952A (en) * | 1998-05-07 | 2000-06-13 | Vanguard International Semiconductor Corporation | Method for forming multi-level contacts |
US6143611A (en) * | 1998-07-30 | 2000-11-07 | Micron Technology, Inc. | Semiconductor processing methods, methods of forming electronic components, and transistors |
JP2000252259A (ja) * | 1999-02-25 | 2000-09-14 | Sony Corp | ドライエッチング方法及び半導体装置の製造方法 |
US6583065B1 (en) * | 1999-08-03 | 2003-06-24 | Applied Materials Inc. | Sidewall polymer forming gas additives for etching processes |
US6235643B1 (en) * | 1999-08-10 | 2001-05-22 | Applied Materials, Inc. | Method for etching a trench having rounded top and bottom corners in a silicon substrate |
US6261967B1 (en) * | 2000-02-09 | 2001-07-17 | Infineon Technologies North America Corp. | Easy to remove hard mask layer for semiconductor device fabrication |
JP2001237415A (ja) * | 2000-02-21 | 2001-08-31 | Nec Corp | 半導体装置の製造方法 |
US6670278B2 (en) * | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
JP2003077838A (ja) * | 2001-08-30 | 2003-03-14 | Toshiba Corp | 半導体製造装置のドライクリーニング時期判定システム、半導体製造装置のドライクリーニング方法、半導体製造装置のドライクリーニングシステム及び半導体装置の製造方法 |
US6528418B1 (en) * | 2001-09-20 | 2003-03-04 | Hynix Semiconductor Inc. | Manufacturing method for semiconductor device |
US6921723B1 (en) * | 2002-04-23 | 2005-07-26 | Applied Materials, Inc. | Etching method having high silicon-to-photoresist selectivity |
US6716570B2 (en) * | 2002-05-23 | 2004-04-06 | Institute Of Microelectronics | Low temperature resist trimming process |
US20040018739A1 (en) * | 2002-07-26 | 2004-01-29 | Applied Materials, Inc. | Methods for etching using building blocks |
US7141505B2 (en) * | 2003-06-27 | 2006-11-28 | Lam Research Corporation | Method for bilayer resist plasma etch |
US7344965B2 (en) * | 2003-12-10 | 2008-03-18 | International Business Machines Corporation | Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gaseous additions |
US7012027B2 (en) * | 2004-01-27 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zirconium oxide and hafnium oxide etching using halogen containing chemicals |
JP4723871B2 (ja) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置 |
US7109085B2 (en) * | 2005-01-11 | 2006-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching process to avoid polysilicon notching |
-
2006
- 2006-03-17 JP JP2006074020A patent/JP4865373B2/ja not_active Expired - Fee Related
- 2006-08-18 TW TW095130464A patent/TW200737341A/zh not_active IP Right Cessation
- 2006-08-21 KR KR1020060078760A patent/KR100848362B1/ko not_active IP Right Cessation
- 2006-08-25 US US11/509,736 patent/US20070218696A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2007250940A (ja) | 2007-09-27 |
JP4865373B2 (ja) | 2012-02-01 |
TWI360176B (zh) | 2012-03-11 |
KR20070094434A (ko) | 2007-09-20 |
US20070218696A1 (en) | 2007-09-20 |
KR100848362B1 (ko) | 2008-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |