TW200746293A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- TW200746293A TW200746293A TW096109942A TW96109942A TW200746293A TW 200746293 A TW200746293 A TW 200746293A TW 096109942 A TW096109942 A TW 096109942A TW 96109942 A TW96109942 A TW 96109942A TW 200746293 A TW200746293 A TW 200746293A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- silicon layer
- etching method
- plasma etching
- target object
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006080464A JP4877747B2 (en) | 2006-03-23 | 2006-03-23 | Plasma etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746293A true TW200746293A (en) | 2007-12-16 |
TWI401741B TWI401741B (en) | 2013-07-11 |
Family
ID=38632365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96109942A TWI401741B (en) | 2006-03-23 | 2007-03-22 | Plasma etching method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4877747B2 (en) |
CN (1) | CN100521105C (en) |
TW (1) | TWI401741B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI494994B (en) * | 2008-03-21 | 2015-08-01 | Tokyo Electron Ltd | Plasma processing device |
TWI512823B (en) * | 2010-06-11 | 2015-12-11 | Tokyo Electron Ltd | Method of selectively etching an insulation stack for a metal interconnect |
TWI585848B (en) * | 2012-07-10 | 2017-06-01 | Tokyo Electron Ltd | A plasma processing method and a plasma processing apparatus |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5102653B2 (en) * | 2008-02-29 | 2012-12-19 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus and computer storage medium |
JP5064319B2 (en) * | 2008-07-04 | 2012-10-31 | 東京エレクトロン株式会社 | Plasma etching method, control program, and computer storage medium |
JP5457021B2 (en) * | 2008-12-22 | 2014-04-02 | 東京エレクトロン株式会社 | Mixed gas supply method and mixed gas supply device |
US8741778B2 (en) * | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
WO2012098759A1 (en) * | 2011-01-17 | 2012-07-26 | 住友電気工業株式会社 | Method for producing silicon carbide semiconductor device |
JP5719648B2 (en) * | 2011-03-14 | 2015-05-20 | 東京エレクトロン株式会社 | Etching method and etching apparatus |
CN103489757A (en) * | 2013-10-16 | 2014-01-01 | 信利半导体有限公司 | Etching method for laminated insulating film |
JP6315809B2 (en) * | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | Etching method |
JP6494424B2 (en) * | 2015-05-29 | 2019-04-03 | 東京エレクトロン株式会社 | Etching method |
JP6541439B2 (en) * | 2015-05-29 | 2019-07-10 | 東京エレクトロン株式会社 | Etching method |
CN105206525A (en) * | 2015-09-28 | 2015-12-30 | 上海华力微电子有限公司 | Method for overcoming defects of grid vertex corner in germanium-silicon growing process |
JP6670672B2 (en) * | 2016-05-10 | 2020-03-25 | 東京エレクトロン株式会社 | Etching method |
JP6929148B2 (en) * | 2017-06-30 | 2021-09-01 | 東京エレクトロン株式会社 | Etching method and etching equipment |
JP6817168B2 (en) * | 2017-08-25 | 2021-01-20 | 東京エレクトロン株式会社 | How to process the object to be processed |
JP7061941B2 (en) * | 2018-08-06 | 2022-05-02 | 東京エレクトロン株式会社 | Etching method and manufacturing method of semiconductor device |
JP2022032467A (en) | 2020-08-12 | 2022-02-25 | 東京エレクトロン株式会社 | Etching method and plasma processing method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62154627A (en) * | 1985-12-26 | 1987-07-09 | Matsushita Electric Ind Co Ltd | Dry etching method |
JP2758754B2 (en) * | 1991-12-05 | 1998-05-28 | シャープ株式会社 | Plasma etching method |
JPH05217954A (en) * | 1992-02-05 | 1993-08-27 | Sharp Corp | Detection method of dryetching end point |
JP3665701B2 (en) * | 1998-01-23 | 2005-06-29 | 株式会社東芝 | Manufacturing method of semiconductor device |
US6218309B1 (en) * | 1999-06-30 | 2001-04-17 | Lam Research Corporation | Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features |
JP2001274141A (en) * | 2000-03-27 | 2001-10-05 | Sony Corp | Method for manufacturing semiconductor device |
JP2001358061A (en) * | 2000-04-12 | 2001-12-26 | Mitsubishi Electric Corp | Method for manufacturing semiconductor device |
JP3946724B2 (en) * | 2004-01-29 | 2007-07-18 | シャープ株式会社 | Manufacturing method of semiconductor device |
US20060032833A1 (en) * | 2004-08-10 | 2006-02-16 | Applied Materials, Inc. | Encapsulation of post-etch halogenic residue |
-
2006
- 2006-03-23 JP JP2006080464A patent/JP4877747B2/en active Active
-
2007
- 2007-03-22 TW TW96109942A patent/TWI401741B/en active
- 2007-03-22 CN CNB2007100894235A patent/CN100521105C/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI494994B (en) * | 2008-03-21 | 2015-08-01 | Tokyo Electron Ltd | Plasma processing device |
TWI512823B (en) * | 2010-06-11 | 2015-12-11 | Tokyo Electron Ltd | Method of selectively etching an insulation stack for a metal interconnect |
TWI585848B (en) * | 2012-07-10 | 2017-06-01 | Tokyo Electron Ltd | A plasma processing method and a plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2007258426A (en) | 2007-10-04 |
JP4877747B2 (en) | 2012-02-15 |
TWI401741B (en) | 2013-07-11 |
CN101043004A (en) | 2007-09-26 |
CN100521105C (en) | 2009-07-29 |
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