JP2011086933A5 - - Google Patents
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- Publication number
- JP2011086933A5 JP2011086933A5 JP2010223671A JP2010223671A JP2011086933A5 JP 2011086933 A5 JP2011086933 A5 JP 2011086933A5 JP 2010223671 A JP2010223671 A JP 2010223671A JP 2010223671 A JP2010223671 A JP 2010223671A JP 2011086933 A5 JP2011086933 A5 JP 2011086933A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- forming
- etching
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 69
- 238000005530 etching Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000002161 passivation Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0099364 | 2009-10-19 | ||
| KR1020090099364A KR20110042614A (ko) | 2009-10-19 | 2009-10-19 | 반도체 소자 및 그 형성방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011086933A JP2011086933A (ja) | 2011-04-28 |
| JP2011086933A5 true JP2011086933A5 (enExample) | 2013-11-14 |
| JP5851089B2 JP5851089B2 (ja) | 2016-02-03 |
Family
ID=43879621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010223671A Active JP5851089B2 (ja) | 2009-10-19 | 2010-10-01 | 半導体素子の形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US8466023B2 (enExample) |
| JP (1) | JP5851089B2 (enExample) |
| KR (1) | KR20110042614A (enExample) |
| TW (1) | TWI506681B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2717214B2 (ja) | 1988-09-06 | 1998-02-18 | 清水建設株式会社 | トラベラーパイリングシステムにおける杭頭構造および杭頭処理方法 |
| KR20110042614A (ko) | 2009-10-19 | 2011-04-27 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
| JP5933953B2 (ja) * | 2011-10-06 | 2016-06-15 | キヤノン株式会社 | 半導体装置の製造方法 |
| US8803249B2 (en) * | 2012-08-09 | 2014-08-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Profile pre-shaping for replacement poly gate interlayer dielectric |
| KR102167625B1 (ko) * | 2013-10-24 | 2020-10-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR101936486B1 (ko) | 2014-02-03 | 2019-01-08 | 아르코닉 인코포레이티드 | 저항 용접 체결구, 장치 및 방법 |
| MX2017004851A (es) | 2014-10-13 | 2017-09-15 | Arconic Inc | Lamina de soldadura fuerte. |
| MX2017007878A (es) | 2014-12-15 | 2018-02-13 | Arconic Inc | Sujetador de soldadura por resistencia, aparato y metodos para unir materiales similares y distintos. |
| KR102333699B1 (ko) | 2014-12-19 | 2021-12-02 | 에스케이하이닉스 주식회사 | 고유전 금속 게이트스택의 에칭 방법 |
| US10593034B2 (en) | 2016-03-25 | 2020-03-17 | Arconic Inc. | Resistance welding fasteners, apparatus and methods for joining dissimilar materials and assessing joints made thereby |
| CN109585293B (zh) * | 2017-09-29 | 2021-12-24 | 台湾积体电路制造股份有限公司 | 切割金属工艺中的基脚去除 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175171A (ja) * | 1991-12-20 | 1993-07-13 | Nippon Steel Corp | ドライエッチング方法 |
| SG43836A1 (en) * | 1992-12-11 | 1997-11-14 | Intel Corp | A mos transistor having a composite gate electrode and method of fabrication |
| US5434093A (en) * | 1994-08-10 | 1995-07-18 | Intel Corporation | Inverted spacer transistor |
| US6025232A (en) * | 1997-11-12 | 2000-02-15 | Micron Technology, Inc. | Methods of forming field effect transistors and related field effect transistor constructions |
| US6344397B1 (en) * | 2000-01-05 | 2002-02-05 | Advanced Micro Devices, Inc. | Semiconductor device having a gate electrode with enhanced electrical characteristics |
| US6316323B1 (en) * | 2000-03-21 | 2001-11-13 | United Microelectronics Corp. | Method for forming bridge free silicide by reverse spacer |
| TW466609B (en) * | 2000-08-17 | 2001-12-01 | United Microelectronics Corp | Manufacturing method and structure for polycide gate |
| US6551941B2 (en) * | 2001-02-22 | 2003-04-22 | Applied Materials, Inc. | Method of forming a notched silicon-containing gate structure |
| DE10153619B4 (de) * | 2001-10-31 | 2004-07-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines Gate-Schichtenstapels für eine integrierte Schaltungsanordnung und integrierte Schaltungsanordnung |
| US6830975B2 (en) * | 2002-01-31 | 2004-12-14 | Micron Technology, Inc. | Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material |
| CN100405612C (zh) * | 2002-04-17 | 2008-07-23 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| TW550686B (en) * | 2002-08-15 | 2003-09-01 | Nanya Technology Corp | Floating gate and method thereof |
| US6806534B2 (en) * | 2003-01-14 | 2004-10-19 | International Business Machines Corporation | Damascene method for improved MOS transistor |
| JP2005175171A (ja) | 2003-12-10 | 2005-06-30 | Fujikura Ltd | Qスイッチ光ファイバレーザ |
| JP4580657B2 (ja) * | 2004-01-30 | 2010-11-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US20060011949A1 (en) * | 2004-07-18 | 2006-01-19 | Chih-Wei Yang | Metal-gate cmos device and fabrication method of making same |
| US7112479B2 (en) * | 2004-08-27 | 2006-09-26 | Micron Technology, Inc. | Methods of forming gatelines and transistor devices |
| US7208424B2 (en) * | 2004-09-17 | 2007-04-24 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device having a metal layer |
| KR100602098B1 (ko) | 2004-12-30 | 2006-07-19 | 동부일렉트로닉스 주식회사 | 채널 길이를 줄일 수 있는 트랜지스터 형성 방법 |
| KR100645196B1 (ko) * | 2005-03-10 | 2006-11-10 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 게이트 형성 방법 |
| US7361561B2 (en) * | 2005-06-24 | 2008-04-22 | Freescale Semiconductor, Inc. | Method of making a metal gate semiconductor device |
| JP2007123890A (ja) | 2005-10-28 | 2007-05-17 | Interuniv Micro Electronica Centrum Vzw | 改良型ゲートスタックのパターン化用プラズマ |
| EP1780779A3 (en) * | 2005-10-28 | 2008-06-11 | Interuniversitair Microelektronica Centrum ( Imec) | A plasma for patterning advanced gate stacks |
| US20070202700A1 (en) | 2006-02-27 | 2007-08-30 | Applied Materials, Inc. | Etch methods to form anisotropic features for high aspect ratio applications |
| JP5015533B2 (ja) * | 2006-09-22 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7880241B2 (en) * | 2007-02-23 | 2011-02-01 | International Business Machines Corporation | Low-temperature electrically activated gate electrode and method of fabricating same |
| KR100868768B1 (ko) * | 2007-02-28 | 2008-11-13 | 삼성전자주식회사 | Cmos 반도체 소자 및 그 제조방법 |
| JP2009094106A (ja) * | 2007-10-03 | 2009-04-30 | Toshiba Corp | 半導体装置の製造方法 |
| US20090212332A1 (en) * | 2008-02-21 | 2009-08-27 | International Business Machines Corporation | Field effect transistor with reduced overlap capacitance |
| KR20110042614A (ko) | 2009-10-19 | 2011-04-27 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
-
2009
- 2009-10-19 KR KR1020090099364A patent/KR20110042614A/ko not_active Ceased
-
2010
- 2010-08-27 TW TW099128941A patent/TWI506681B/zh active
- 2010-08-30 US US12/871,044 patent/US8466023B2/en active Active
- 2010-10-01 JP JP2010223671A patent/JP5851089B2/ja active Active
-
2013
- 2013-06-11 US US13/915,284 patent/US9419072B2/en active Active
-
2015
- 2015-11-05 US US14/933,537 patent/US9608054B2/en active Active
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