JP2013118359A5 - - Google Patents
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- Publication number
- JP2013118359A5 JP2013118359A5 JP2012229411A JP2012229411A JP2013118359A5 JP 2013118359 A5 JP2013118359 A5 JP 2013118359A5 JP 2012229411 A JP2012229411 A JP 2012229411A JP 2012229411 A JP2012229411 A JP 2012229411A JP 2013118359 A5 JP2013118359 A5 JP 2013118359A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma etching
- etching method
- silicon nitride
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims description 48
- 238000001020 plasma etching Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 6
- 229920005591 polysilicon Polymers 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910004529 TaF 5 Inorganic materials 0.000 claims 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012229411A JP5932599B2 (ja) | 2011-10-31 | 2012-10-17 | プラズマエッチング方法 |
| TW105122740A TWI600083B (zh) | 2011-10-31 | 2012-10-25 | Plasma etching method |
| TW101139495A TW201335991A (zh) | 2011-10-31 | 2012-10-25 | 電漿蝕刻方法 |
| KR1020120121063A KR101405175B1 (ko) | 2011-10-31 | 2012-10-30 | 플라즈마 에칭 방법 |
| US13/664,940 US8741166B2 (en) | 2011-10-31 | 2012-10-31 | Plasma etching method |
| CN201310015232.XA CN103779203B (zh) | 2012-10-17 | 2013-01-16 | 等离子蚀刻方法 |
| US14/248,844 US8889024B2 (en) | 2011-10-31 | 2014-04-09 | Plasma etching method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011238166 | 2011-10-31 | ||
| JP2011238166 | 2011-10-31 | ||
| JP2012229411A JP5932599B2 (ja) | 2011-10-31 | 2012-10-17 | プラズマエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013118359A JP2013118359A (ja) | 2013-06-13 |
| JP2013118359A5 true JP2013118359A5 (enExample) | 2015-03-19 |
| JP5932599B2 JP5932599B2 (ja) | 2016-06-08 |
Family
ID=48610539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012229411A Active JP5932599B2 (ja) | 2011-10-31 | 2012-10-17 | プラズマエッチング方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8741166B2 (enExample) |
| JP (1) | JP5932599B2 (enExample) |
| KR (1) | KR101405175B1 (enExample) |
| TW (2) | TW201335991A (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6289996B2 (ja) * | 2014-05-14 | 2018-03-07 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US9911620B2 (en) * | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
| US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
| US9837286B2 (en) | 2015-09-04 | 2017-12-05 | Lam Research Corporation | Systems and methods for selectively etching tungsten in a downstream reactor |
| US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
| JP6557588B2 (ja) * | 2015-12-04 | 2019-08-07 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
| US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
| US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
| US9673058B1 (en) | 2016-03-14 | 2017-06-06 | Lam Research Corporation | Method for etching features in dielectric layers |
| US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| JP6796519B2 (ja) * | 2017-03-10 | 2020-12-09 | 東京エレクトロン株式会社 | エッチング方法 |
| FR3065576B1 (fr) * | 2017-04-25 | 2020-01-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de gravure d'une couche a base de sin |
| US10847374B2 (en) | 2017-10-31 | 2020-11-24 | Lam Research Corporation | Method for etching features in a stack |
| CN118380375A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| US10361092B1 (en) | 2018-02-23 | 2019-07-23 | Lam Research Corporation | Etching features using metal passivation |
| US10283370B1 (en) * | 2018-03-01 | 2019-05-07 | Applied Materials, Inc. | Silicon addition for silicon nitride etching selectivity |
| JP6811202B2 (ja) * | 2018-04-17 | 2021-01-13 | 東京エレクトロン株式会社 | エッチングする方法及びプラズマ処理装置 |
| US10515821B1 (en) | 2018-06-26 | 2019-12-24 | Lam Research Corporation | Method of achieving high selectivity for high aspect ratio dielectric etch |
| US10741407B2 (en) | 2018-10-19 | 2020-08-11 | Lam Research Corporation | Reduction of sidewall notching for high aspect ratio 3D NAND etch |
| CN113544823B (zh) * | 2020-02-10 | 2024-04-12 | 株式会社日立高新技术 | 等离子处理方法 |
| KR20250099767A (ko) * | 2020-02-28 | 2025-07-02 | 램 리써치 코포레이션 | 고 종횡비 3D NAND 에칭을 위한 측벽 노칭 (notching) 감소 |
| JP7466686B2 (ja) | 2020-03-23 | 2024-04-12 | ラム リサーチ コーポレーション | 基板処理システムにおける中間リング腐食補償 |
| CN113471049B (zh) | 2021-06-30 | 2022-07-26 | 北京屹唐半导体科技股份有限公司 | 用于处理工件的方法及等离子体刻蚀机、半导体器件 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4793897A (en) * | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
| EP0424299A3 (en) * | 1989-10-20 | 1991-08-28 | International Business Machines Corporation | Selective silicon nitride plasma etching |
| JP3210359B2 (ja) * | 1991-05-29 | 2001-09-17 | 株式会社東芝 | ドライエッチング方法 |
| JP3172340B2 (ja) * | 1993-08-12 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP3681533B2 (ja) | 1997-02-25 | 2005-08-10 | 富士通株式会社 | 窒化シリコン層のエッチング方法及び半導体装置の製造方法 |
| US5786276A (en) * | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
| JP3439455B2 (ja) * | 2000-12-18 | 2003-08-25 | Ｎｅｃエレクトロニクス株式会社 | 異方性ドライエッチング方法 |
| US6800210B2 (en) * | 2001-05-22 | 2004-10-05 | Reflectivity, Inc. | Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
| US7098141B1 (en) * | 2003-03-03 | 2006-08-29 | Lam Research Corporation | Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures |
| GB0401622D0 (en) * | 2004-01-26 | 2004-02-25 | Oxford Instr Plasma Technology | Plasma etching process |
| KR100780944B1 (ko) * | 2005-10-12 | 2007-12-03 | 삼성전자주식회사 | 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법 |
| US7393788B2 (en) * | 2006-02-10 | 2008-07-01 | Cook Julie A | Method and system for selectively etching a dielectric material relative to silicon |
| JP5209859B2 (ja) | 2006-09-19 | 2013-06-12 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| US20110223770A1 (en) * | 2010-03-15 | 2011-09-15 | Lam Research Corporation | Nitride plasma etch with highly tunable selectivity to oxide |
| US20130344702A1 (en) * | 2011-03-04 | 2013-12-26 | Tokyo Electron Limited | Method of etching silicon nitride films |
-
2012
- 2012-10-17 JP JP2012229411A patent/JP5932599B2/ja active Active
- 2012-10-25 TW TW101139495A patent/TW201335991A/zh unknown
- 2012-10-25 TW TW105122740A patent/TWI600083B/zh active
- 2012-10-30 KR KR1020120121063A patent/KR101405175B1/ko active Active
- 2012-10-31 US US13/664,940 patent/US8741166B2/en active Active
-
2014
- 2014-04-09 US US14/248,844 patent/US8889024B2/en active Active
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