JP2013131587A5 - - Google Patents

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Publication number
JP2013131587A5
JP2013131587A5 JP2011279150A JP2011279150A JP2013131587A5 JP 2013131587 A5 JP2013131587 A5 JP 2013131587A5 JP 2011279150 A JP2011279150 A JP 2011279150A JP 2011279150 A JP2011279150 A JP 2011279150A JP 2013131587 A5 JP2013131587 A5 JP 2013131587A5
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JP
Japan
Prior art keywords
plasma
processing method
etching
film forming
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011279150A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013131587A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011279150A priority Critical patent/JP2013131587A/ja
Priority claimed from JP2011279150A external-priority patent/JP2013131587A/ja
Priority to KR20120007204A priority patent/KR101312473B1/ko
Priority to TW101104378A priority patent/TWI466187B/zh
Priority to US13/404,162 priority patent/US9018075B2/en
Publication of JP2013131587A publication Critical patent/JP2013131587A/ja
Publication of JP2013131587A5 publication Critical patent/JP2013131587A5/ja
Pending legal-status Critical Current

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JP2011279150A 2011-12-21 2011-12-21 プラズマ処理方法 Pending JP2013131587A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011279150A JP2013131587A (ja) 2011-12-21 2011-12-21 プラズマ処理方法
KR20120007204A KR101312473B1 (ko) 2011-12-21 2012-01-25 플라즈마 처리 방법
TW101104378A TWI466187B (zh) 2011-12-21 2012-02-10 Plasma processing method
US13/404,162 US9018075B2 (en) 2011-12-21 2012-02-24 Plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011279150A JP2013131587A (ja) 2011-12-21 2011-12-21 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2013131587A JP2013131587A (ja) 2013-07-04
JP2013131587A5 true JP2013131587A5 (enExample) 2014-10-16

Family

ID=48654960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011279150A Pending JP2013131587A (ja) 2011-12-21 2011-12-21 プラズマ処理方法

Country Status (4)

Country Link
US (1) US9018075B2 (enExample)
JP (1) JP2013131587A (enExample)
KR (1) KR101312473B1 (enExample)
TW (1) TWI466187B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6095528B2 (ja) * 2013-09-04 2017-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
EP3067919A1 (en) * 2015-03-11 2016-09-14 IMEC vzw Method for forming vertical structures in a semiconductor target layer
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9966312B2 (en) * 2015-08-25 2018-05-08 Tokyo Electron Limited Method for etching a silicon-containing substrate
WO2018057493A1 (en) * 2016-09-21 2018-03-29 Tokyo Electron Limited Method of patterning intersecting structures
US10529671B2 (en) 2016-12-13 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and method for forming the same
US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes
KR102409660B1 (ko) * 2019-07-18 2022-06-22 주식회사 히타치하이테크 플라스마 처리 장치
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20240016242A (ko) * 2022-07-25 2024-02-06 주식회사 히타치하이테크 플라스마 처리 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3096008B2 (ja) * 1997-03-13 2000-10-10 ソニー株式会社 半導体装置の製造方法
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
EP1077475A3 (en) * 1999-08-11 2003-04-02 Applied Materials, Inc. Method of micromachining a multi-part cavity
JP2003007676A (ja) * 2001-06-18 2003-01-10 Sony Corp 半導体装置の製造方法
JP4854874B2 (ja) 2001-06-22 2012-01-18 東京エレクトロン株式会社 ドライエッチング方法
WO2008062600A1 (fr) * 2006-11-22 2008-05-29 Sumitomo Precision Products Co., Ltd. Structure de silicium à ouverture ayant un rapport hauteur/largeur élevé, procédé, appareil et programme de fabrication de cette structure et procédé de fabrication de masque de gravure pour cette structure de silicium
JP5229711B2 (ja) * 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
KR20090003716A (ko) * 2007-07-03 2009-01-12 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
JP5297615B2 (ja) * 2007-09-07 2013-09-25 株式会社日立ハイテクノロジーズ ドライエッチング方法
US8435902B2 (en) * 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch

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