TWI466187B - Plasma processing method - Google Patents

Plasma processing method Download PDF

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Publication number
TWI466187B
TWI466187B TW101104378A TW101104378A TWI466187B TW I466187 B TWI466187 B TW I466187B TW 101104378 A TW101104378 A TW 101104378A TW 101104378 A TW101104378 A TW 101104378A TW I466187 B TWI466187 B TW I466187B
Authority
TW
Taiwan
Prior art keywords
trench
forming step
plasma
nitride film
oxide film
Prior art date
Application number
TW101104378A
Other languages
English (en)
Chinese (zh)
Other versions
TW201327661A (zh
Inventor
Toru Ito
Hiroaki Ishimura
Akito Kouchi
Hayato Watanabe
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201327661A publication Critical patent/TW201327661A/zh
Application granted granted Critical
Publication of TWI466187B publication Critical patent/TWI466187B/zh

Links

Classifications

    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G17/00—Cultivation of hops, vines, fruit trees, or like trees
    • A01G17/04—Supports for hops, vines, or trees
    • A01G17/10—Holders for boughs or branches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G17/00—Cultivation of hops, vines, fruit trees, or like trees
    • A01G17/04—Supports for hops, vines, or trees
    • A01G17/06—Trellis-work
    • A01G17/08—Tools e.g. clips for attaching hops, vines, or boughs to trellis-work; Tying devices
    • A01G17/085—Espalier machines; Tying machines
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G9/00—Cultivation in receptacles, forcing-frames or greenhouses; Edging for beds, lawn or the like
    • A01G9/12—Supports for plants; Trellis for strawberries or the like
    • A01G9/128—Fixing of plants to supports, e.g. by means of clips
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
    • F16B7/00—Connections of rods or tubes, e.g. of non-circular section, mutually, including resilient connections
    • F16B7/04—Clamping or clipping connections
    • F16B7/0406—Clamping or clipping connections for rods or tubes being coaxial
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental Sciences (AREA)
  • Botany (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
TW101104378A 2011-12-21 2012-02-10 Plasma processing method TWI466187B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011279150A JP2013131587A (ja) 2011-12-21 2011-12-21 プラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201327661A TW201327661A (zh) 2013-07-01
TWI466187B true TWI466187B (zh) 2014-12-21

Family

ID=48654960

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101104378A TWI466187B (zh) 2011-12-21 2012-02-10 Plasma processing method

Country Status (4)

Country Link
US (1) US9018075B2 (enExample)
JP (1) JP2013131587A (enExample)
KR (1) KR101312473B1 (enExample)
TW (1) TWI466187B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6095528B2 (ja) * 2013-09-04 2017-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
EP3067919A1 (en) * 2015-03-11 2016-09-14 IMEC vzw Method for forming vertical structures in a semiconductor target layer
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9966312B2 (en) * 2015-08-25 2018-05-08 Tokyo Electron Limited Method for etching a silicon-containing substrate
KR102405202B1 (ko) 2016-09-21 2022-06-02 도쿄엘렉트론가부시키가이샤 교차 구조물들을 패터닝하는 방법
US10529671B2 (en) 2016-12-13 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and method for forming the same
US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes
JP6987986B2 (ja) * 2019-07-18 2022-01-05 株式会社日立ハイテク プラズマ処理装置
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
CN117769757A (zh) * 2022-07-25 2024-03-26 株式会社日立高新技术 等离子体处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065479A1 (en) * 2007-09-07 2009-03-12 Koichi Nakaune Dry etching method of high-k film
WO2011115761A2 (en) * 2010-03-17 2011-09-22 Applied Materials, Inc. Invertable pattern loading with dry etch

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3096008B2 (ja) * 1997-03-13 2000-10-10 ソニー株式会社 半導体装置の製造方法
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
EP1077475A3 (en) * 1999-08-11 2003-04-02 Applied Materials, Inc. Method of micromachining a multi-part cavity
JP2003007676A (ja) * 2001-06-18 2003-01-10 Sony Corp 半導体装置の製造方法
JP4854874B2 (ja) 2001-06-22 2012-01-18 東京エレクトロン株式会社 ドライエッチング方法
EP2077577A4 (en) * 2006-11-22 2010-03-24 Sumitomo Precision Prod Co SILICON STRUCTURE HAVING A HIGH SIDE OPENING, METHOD FOR PRODUCING THE SILICON STRUCTURE, A SILICON STRUCTURE MANUFACTURING DEVICE, A SILICON STRUCTURE PRODUCTION PROGRAM, AND METHOD FOR PRODUCING A SILICONE STRUCTURE METAL MASK
JP5229711B2 (ja) * 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
KR20090003716A (ko) * 2007-07-03 2009-01-12 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065479A1 (en) * 2007-09-07 2009-03-12 Koichi Nakaune Dry etching method of high-k film
WO2011115761A2 (en) * 2010-03-17 2011-09-22 Applied Materials, Inc. Invertable pattern loading with dry etch

Also Published As

Publication number Publication date
US20130164911A1 (en) 2013-06-27
KR101312473B1 (ko) 2013-09-27
JP2013131587A (ja) 2013-07-04
US9018075B2 (en) 2015-04-28
KR20130072105A (ko) 2013-07-01
TW201327661A (zh) 2013-07-01

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