JP2010245101A5 - - Google Patents

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Publication number
JP2010245101A5
JP2010245101A5 JP2009089103A JP2009089103A JP2010245101A5 JP 2010245101 A5 JP2010245101 A5 JP 2010245101A5 JP 2009089103 A JP2009089103 A JP 2009089103A JP 2009089103 A JP2009089103 A JP 2009089103A JP 2010245101 A5 JP2010245101 A5 JP 2010245101A5
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JP
Japan
Prior art keywords
etching
gas
dry etching
etching method
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009089103A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010245101A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009089103A priority Critical patent/JP2010245101A/ja
Priority claimed from JP2009089103A external-priority patent/JP2010245101A/ja
Priority to KR1020090068337A priority patent/KR101095603B1/ko
Priority to US12/512,094 priority patent/US8207066B2/en
Priority to TW098128384A priority patent/TW201037765A/zh
Publication of JP2010245101A publication Critical patent/JP2010245101A/ja
Publication of JP2010245101A5 publication Critical patent/JP2010245101A5/ja
Ceased legal-status Critical Current

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JP2009089103A 2009-04-01 2009-04-01 ドライエッチング方法 Ceased JP2010245101A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009089103A JP2010245101A (ja) 2009-04-01 2009-04-01 ドライエッチング方法
KR1020090068337A KR101095603B1 (ko) 2009-04-01 2009-07-27 드라이 에칭방법
US12/512,094 US8207066B2 (en) 2009-04-01 2009-07-30 Dry etching method
TW098128384A TW201037765A (en) 2009-04-01 2009-08-24 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009089103A JP2010245101A (ja) 2009-04-01 2009-04-01 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JP2010245101A JP2010245101A (ja) 2010-10-28
JP2010245101A5 true JP2010245101A5 (enExample) 2012-03-29

Family

ID=42826516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009089103A Ceased JP2010245101A (ja) 2009-04-01 2009-04-01 ドライエッチング方法

Country Status (4)

Country Link
US (1) US8207066B2 (enExample)
JP (1) JP2010245101A (enExample)
KR (1) KR101095603B1 (enExample)
TW (1) TW201037765A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020012005A (ko) * 2002-01-12 2002-02-09 오병희 무술주
JP5719648B2 (ja) 2011-03-14 2015-05-20 東京エレクトロン株式会社 エッチング方法、およびエッチング装置
US8575035B2 (en) * 2012-02-22 2013-11-05 Omnivision Technologies, Inc. Methods of forming varying depth trenches in semiconductor devices
CN105765703B (zh) 2013-12-23 2021-02-23 英特尔公司 在多个鳍状物间距结构当中的笔直、高和一致的鳍状物的蚀刻技术
JP6228860B2 (ja) * 2014-02-12 2017-11-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP6486137B2 (ja) 2015-02-16 2019-03-20 キヤノン株式会社 半導体装置の製造方法
EP3067919A1 (en) * 2015-03-11 2016-09-14 IMEC vzw Method for forming vertical structures in a semiconductor target layer
JP6494443B2 (ja) * 2015-06-15 2019-04-03 東京エレクトロン株式会社 成膜方法及び成膜装置
CN105529258B (zh) * 2016-01-29 2019-04-09 上海华虹宏力半导体制造有限公司 Rfldmos工艺中稳定栅极形貌的工艺方法
US10453738B2 (en) * 2017-12-22 2019-10-22 Texas Instruments Incorporated Selective etches for reducing cone formation in shallow trench isolations
US11398387B2 (en) 2018-12-05 2022-07-26 Lam Research Corporation Etching isolation features and dense features within a substrate
JP7296277B2 (ja) * 2019-08-22 2023-06-22 東京エレクトロン株式会社 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
JP7585720B2 (ja) * 2020-11-04 2024-11-19 富士電機株式会社 溝深さの調整方法及び半導体装置の製造方法
US12327731B2 (en) 2022-02-25 2025-06-10 Samsung Electronics Co., Ltd. Etching gas mixture and method of manufacturing integrated circuit device using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
KR910010516A (ko) * 1989-11-15 1991-06-29 아오이 죠이치 반도체 메모리장치
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
KR100257149B1 (ko) * 1997-06-24 2000-05-15 김영환 반도체 소자의 제조 방법
JP4013308B2 (ja) * 1998-01-21 2007-11-28 ヤマハ株式会社 配線形成方法
JP4039504B2 (ja) * 1998-11-10 2008-01-30 シャープ株式会社 半導体装置の製造方法
JP2001053138A (ja) * 1999-08-10 2001-02-23 Sanyo Electric Co Ltd 半導体装置の製造方法
US6677242B1 (en) * 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
KR100781033B1 (ko) * 2005-05-12 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP4816478B2 (ja) * 2007-02-02 2011-11-16 東京エレクトロン株式会社 エッチング方法及び記憶媒体
US8809196B2 (en) * 2009-01-14 2014-08-19 Tokyo Electron Limited Method of etching a thin film using pressure modulation

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