KR101095603B1 - 드라이 에칭방법 - Google Patents

드라이 에칭방법 Download PDF

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Publication number
KR101095603B1
KR101095603B1 KR1020090068337A KR20090068337A KR101095603B1 KR 101095603 B1 KR101095603 B1 KR 101095603B1 KR 1020090068337 A KR1020090068337 A KR 1020090068337A KR 20090068337 A KR20090068337 A KR 20090068337A KR 101095603 B1 KR101095603 B1 KR 101095603B1
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KR
South Korea
Prior art keywords
etching
pattern
etching step
rate
dense
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Expired - Fee Related
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KR1020090068337A
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English (en)
Korean (ko)
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KR20100109832A (ko
Inventor
요시하루 이노우에
히로아키 이시무라
히토시 고바야시
마스노리 이시하라
도루 이토
도시아키 니시다
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20100109832A publication Critical patent/KR20100109832A/ko
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Publication of KR101095603B1 publication Critical patent/KR101095603B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020090068337A 2009-04-01 2009-07-27 드라이 에칭방법 Expired - Fee Related KR101095603B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-089103 2009-04-01
JP2009089103A JP2010245101A (ja) 2009-04-01 2009-04-01 ドライエッチング方法

Publications (2)

Publication Number Publication Date
KR20100109832A KR20100109832A (ko) 2010-10-11
KR101095603B1 true KR101095603B1 (ko) 2011-12-19

Family

ID=42826516

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090068337A Expired - Fee Related KR101095603B1 (ko) 2009-04-01 2009-07-27 드라이 에칭방법

Country Status (4)

Country Link
US (1) US8207066B2 (enExample)
JP (1) JP2010245101A (enExample)
KR (1) KR101095603B1 (enExample)
TW (1) TW201037765A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020012005A (ko) * 2002-01-12 2002-02-09 오병희 무술주

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5719648B2 (ja) 2011-03-14 2015-05-20 東京エレクトロン株式会社 エッチング方法、およびエッチング装置
US8575035B2 (en) * 2012-02-22 2013-11-05 Omnivision Technologies, Inc. Methods of forming varying depth trenches in semiconductor devices
CN105765703B (zh) 2013-12-23 2021-02-23 英特尔公司 在多个鳍状物间距结构当中的笔直、高和一致的鳍状物的蚀刻技术
JP6228860B2 (ja) * 2014-02-12 2017-11-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP6486137B2 (ja) 2015-02-16 2019-03-20 キヤノン株式会社 半導体装置の製造方法
EP3067919A1 (en) * 2015-03-11 2016-09-14 IMEC vzw Method for forming vertical structures in a semiconductor target layer
JP6494443B2 (ja) * 2015-06-15 2019-04-03 東京エレクトロン株式会社 成膜方法及び成膜装置
CN105529258B (zh) * 2016-01-29 2019-04-09 上海华虹宏力半导体制造有限公司 Rfldmos工艺中稳定栅极形貌的工艺方法
US10453738B2 (en) * 2017-12-22 2019-10-22 Texas Instruments Incorporated Selective etches for reducing cone formation in shallow trench isolations
US11398387B2 (en) 2018-12-05 2022-07-26 Lam Research Corporation Etching isolation features and dense features within a substrate
JP7296277B2 (ja) * 2019-08-22 2023-06-22 東京エレクトロン株式会社 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
JP7585720B2 (ja) * 2020-11-04 2024-11-19 富士電機株式会社 溝深さの調整方法及び半導体装置の製造方法
US12327731B2 (en) 2022-02-25 2025-06-10 Samsung Electronics Co., Ltd. Etching gas mixture and method of manufacturing integrated circuit device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214358A (ja) * 1998-01-21 1999-08-06 Yamaha Corp 配線形成方法
KR100227772B1 (ko) * 1990-10-19 1999-11-01 니시무로 타이죠 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
KR100257149B1 (ko) * 1997-06-24 2000-05-15 김영환 반도체 소자의 제조 방법
JP4039504B2 (ja) * 1998-11-10 2008-01-30 シャープ株式会社 半導体装置の製造方法
JP2001053138A (ja) * 1999-08-10 2001-02-23 Sanyo Electric Co Ltd 半導体装置の製造方法
US6677242B1 (en) * 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
KR100781033B1 (ko) * 2005-05-12 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP4816478B2 (ja) * 2007-02-02 2011-11-16 東京エレクトロン株式会社 エッチング方法及び記憶媒体
US8809196B2 (en) * 2009-01-14 2014-08-19 Tokyo Electron Limited Method of etching a thin film using pressure modulation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100227772B1 (ko) * 1990-10-19 1999-11-01 니시무로 타이죠 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법
JPH11214358A (ja) * 1998-01-21 1999-08-06 Yamaha Corp 配線形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020012005A (ko) * 2002-01-12 2002-02-09 오병희 무술주

Also Published As

Publication number Publication date
US20100255612A1 (en) 2010-10-07
JP2010245101A (ja) 2010-10-28
US8207066B2 (en) 2012-06-26
KR20100109832A (ko) 2010-10-11
TW201037765A (en) 2010-10-16

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