TW201037765A - Dry etching method - Google Patents
Dry etching method Download PDFInfo
- Publication number
- TW201037765A TW201037765A TW098128384A TW98128384A TW201037765A TW 201037765 A TW201037765 A TW 201037765A TW 098128384 A TW098128384 A TW 098128384A TW 98128384 A TW98128384 A TW 98128384A TW 201037765 A TW201037765 A TW 201037765A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- etching step
- pattern
- gas
- rate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000001312 dry etching Methods 0.000 title claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 276
- 239000007789 gas Substances 0.000 claims abstract description 78
- 230000000694 effects Effects 0.000 claims abstract description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- 229910052770 Uranium Inorganic materials 0.000 claims description 14
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 14
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 210000001747 pupil Anatomy 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 14
- 229910001882 dioxygen Inorganic materials 0.000 description 14
- -1 cyanide compound Chemical class 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009089103A JP2010245101A (ja) | 2009-04-01 | 2009-04-01 | ドライエッチング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201037765A true TW201037765A (en) | 2010-10-16 |
Family
ID=42826516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098128384A TW201037765A (en) | 2009-04-01 | 2009-08-24 | Dry etching method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8207066B2 (enExample) |
| JP (1) | JP2010245101A (enExample) |
| KR (1) | KR101095603B1 (enExample) |
| TW (1) | TW201037765A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020012005A (ko) * | 2002-01-12 | 2002-02-09 | 오병희 | 무술주 |
| JP5719648B2 (ja) | 2011-03-14 | 2015-05-20 | 東京エレクトロン株式会社 | エッチング方法、およびエッチング装置 |
| US8575035B2 (en) * | 2012-02-22 | 2013-11-05 | Omnivision Technologies, Inc. | Methods of forming varying depth trenches in semiconductor devices |
| CN105765703B (zh) | 2013-12-23 | 2021-02-23 | 英特尔公司 | 在多个鳍状物间距结构当中的笔直、高和一致的鳍状物的蚀刻技术 |
| JP6228860B2 (ja) * | 2014-02-12 | 2017-11-08 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
| JP6486137B2 (ja) | 2015-02-16 | 2019-03-20 | キヤノン株式会社 | 半導体装置の製造方法 |
| EP3067919A1 (en) * | 2015-03-11 | 2016-09-14 | IMEC vzw | Method for forming vertical structures in a semiconductor target layer |
| JP6494443B2 (ja) * | 2015-06-15 | 2019-04-03 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| CN105529258B (zh) * | 2016-01-29 | 2019-04-09 | 上海华虹宏力半导体制造有限公司 | Rfldmos工艺中稳定栅极形貌的工艺方法 |
| US10453738B2 (en) * | 2017-12-22 | 2019-10-22 | Texas Instruments Incorporated | Selective etches for reducing cone formation in shallow trench isolations |
| US11398387B2 (en) | 2018-12-05 | 2022-07-26 | Lam Research Corporation | Etching isolation features and dense features within a substrate |
| JP7296277B2 (ja) * | 2019-08-22 | 2023-06-22 | 東京エレクトロン株式会社 | エッチングする方法、デバイス製造方法、及びプラズマ処理装置 |
| JP7585720B2 (ja) * | 2020-11-04 | 2024-11-19 | 富士電機株式会社 | 溝深さの調整方法及び半導体装置の製造方法 |
| US12327731B2 (en) | 2022-02-25 | 2025-06-10 | Samsung Electronics Co., Ltd. | Etching gas mixture and method of manufacturing integrated circuit device using the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2918892B2 (ja) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
| KR910010516A (ko) * | 1989-11-15 | 1991-06-29 | 아오이 죠이치 | 반도체 메모리장치 |
| US5356515A (en) * | 1990-10-19 | 1994-10-18 | Tokyo Electron Limited | Dry etching method |
| KR100257149B1 (ko) * | 1997-06-24 | 2000-05-15 | 김영환 | 반도체 소자의 제조 방법 |
| JP4013308B2 (ja) * | 1998-01-21 | 2007-11-28 | ヤマハ株式会社 | 配線形成方法 |
| JP4039504B2 (ja) * | 1998-11-10 | 2008-01-30 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2001053138A (ja) * | 1999-08-10 | 2001-02-23 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| US6677242B1 (en) * | 2000-08-12 | 2004-01-13 | Applied Materials Inc. | Integrated shallow trench isolation approach |
| KR100781033B1 (ko) * | 2005-05-12 | 2007-11-29 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| JP4816478B2 (ja) * | 2007-02-02 | 2011-11-16 | 東京エレクトロン株式会社 | エッチング方法及び記憶媒体 |
| US8809196B2 (en) * | 2009-01-14 | 2014-08-19 | Tokyo Electron Limited | Method of etching a thin film using pressure modulation |
-
2009
- 2009-04-01 JP JP2009089103A patent/JP2010245101A/ja not_active Ceased
- 2009-07-27 KR KR1020090068337A patent/KR101095603B1/ko not_active Expired - Fee Related
- 2009-07-30 US US12/512,094 patent/US8207066B2/en not_active Expired - Fee Related
- 2009-08-24 TW TW098128384A patent/TW201037765A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20100255612A1 (en) | 2010-10-07 |
| JP2010245101A (ja) | 2010-10-28 |
| US8207066B2 (en) | 2012-06-26 |
| KR20100109832A (ko) | 2010-10-11 |
| KR101095603B1 (ko) | 2011-12-19 |
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