JP2018182103A5 - - Google Patents
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- JP2018182103A5 JP2018182103A5 JP2017080798A JP2017080798A JP2018182103A5 JP 2018182103 A5 JP2018182103 A5 JP 2018182103A5 JP 2017080798 A JP2017080798 A JP 2017080798A JP 2017080798 A JP2017080798 A JP 2017080798A JP 2018182103 A5 JP2018182103 A5 JP 2018182103A5
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- JP
- Japan
- Prior art keywords
- gas
- plasma
- space
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 17
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims 3
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 241000287463 Phalacrocorax Species 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017080798A JP6823527B2 (ja) | 2017-04-14 | 2017-04-14 | エッチング方法 |
| TW107112016A TWI782975B (zh) | 2017-04-14 | 2018-04-09 | 蝕刻方法 |
| KR1020180042942A KR102562634B1 (ko) | 2017-04-14 | 2018-04-12 | 에칭 방법 |
| CN201810329352.XA CN108735598B (zh) | 2017-04-14 | 2018-04-13 | 蚀刻方法 |
| US15/952,328 US10269578B2 (en) | 2017-04-14 | 2018-04-13 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017080798A JP6823527B2 (ja) | 2017-04-14 | 2017-04-14 | エッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018182103A JP2018182103A (ja) | 2018-11-15 |
| JP2018182103A5 true JP2018182103A5 (enExample) | 2019-12-26 |
| JP6823527B2 JP6823527B2 (ja) | 2021-02-03 |
Family
ID=63790267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017080798A Active JP6823527B2 (ja) | 2017-04-14 | 2017-04-14 | エッチング方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10269578B2 (enExample) |
| JP (1) | JP6823527B2 (enExample) |
| KR (1) | KR102562634B1 (enExample) |
| CN (1) | CN108735598B (enExample) |
| TW (1) | TWI782975B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7071175B2 (ja) * | 2017-04-18 | 2022-05-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| JP7066565B2 (ja) * | 2018-07-27 | 2022-05-13 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| US12027375B2 (en) * | 2019-02-14 | 2024-07-02 | Lam Research Corporation | Selective etch using a sacrificial mask |
| JP7277225B2 (ja) * | 2019-04-08 | 2023-05-18 | 東京エレクトロン株式会社 | エッチング方法、及び、プラズマ処理装置 |
| JP7398915B2 (ja) * | 2019-10-01 | 2023-12-15 | 東京エレクトロン株式会社 | 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置 |
| JP7336365B2 (ja) * | 2019-11-19 | 2023-08-31 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06318576A (ja) * | 1993-04-30 | 1994-11-15 | Oki Electric Ind Co Ltd | ドライエッチング方法 |
| JP3259529B2 (ja) * | 1994-07-11 | 2002-02-25 | ソニー株式会社 | 選択エッチング方法 |
| JP4123428B2 (ja) | 2001-11-30 | 2008-07-23 | 東京エレクトロン株式会社 | エッチング方法 |
| US8252696B2 (en) | 2007-10-22 | 2012-08-28 | Applied Materials, Inc. | Selective etching of silicon nitride |
| US8426309B2 (en) * | 2009-09-10 | 2013-04-23 | Lockheed Martin Corporation | Graphene nanoelectric device fabrication |
| JP4982582B2 (ja) * | 2010-03-31 | 2012-07-25 | 株式会社東芝 | マスクの製造方法 |
| JP2012018989A (ja) * | 2010-07-06 | 2012-01-26 | Elpida Memory Inc | 半導体装置の製造方法 |
| WO2012008179A1 (ja) * | 2010-07-12 | 2012-01-19 | 住友精密工業株式会社 | エッチング方法 |
| CN103311092B (zh) * | 2012-03-12 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 沟槽的刻蚀方法 |
| US9093389B2 (en) * | 2013-01-16 | 2015-07-28 | Applied Materials, Inc. | Method of patterning a silicon nitride dielectric film |
| US9378971B1 (en) | 2014-12-04 | 2016-06-28 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9378975B2 (en) | 2014-02-10 | 2016-06-28 | Tokyo Electron Limited | Etching method to form spacers having multiple film layers |
| US9059043B1 (en) * | 2014-02-11 | 2015-06-16 | International Business Machines Corporation | Fin field effect transistor with self-aligned source/drain regions |
| KR102233577B1 (ko) * | 2014-02-25 | 2021-03-30 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
| JP6235981B2 (ja) * | 2014-07-01 | 2017-11-22 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| US9633867B2 (en) * | 2015-01-05 | 2017-04-25 | Lam Research Corporation | Method and apparatus for anisotropic tungsten etching |
| US9576811B2 (en) * | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9828672B2 (en) * | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| KR101702869B1 (ko) * | 2015-09-10 | 2017-02-06 | 주식회사 케이씨텍 | 원자층 식각장치 |
| US9972502B2 (en) * | 2015-09-11 | 2018-05-15 | Lam Research Corporation | Systems and methods for performing in-situ deposition of sidewall image transfer spacers |
| US9595451B1 (en) * | 2015-10-19 | 2017-03-14 | Applied Materials, Inc. | Highly selective etching methods for etching dielectric materials |
| US10115601B2 (en) * | 2016-02-03 | 2018-10-30 | Tokyo Electron Limited | Selective film formation for raised and recessed features using deposition and etching processes |
| JP6812284B2 (ja) | 2017-03-28 | 2021-01-13 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
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2017
- 2017-04-14 JP JP2017080798A patent/JP6823527B2/ja active Active
-
2018
- 2018-04-09 TW TW107112016A patent/TWI782975B/zh active
- 2018-04-12 KR KR1020180042942A patent/KR102562634B1/ko active Active
- 2018-04-13 CN CN201810329352.XA patent/CN108735598B/zh active Active
- 2018-04-13 US US15/952,328 patent/US10269578B2/en active Active