JP6823527B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP6823527B2
JP6823527B2 JP2017080798A JP2017080798A JP6823527B2 JP 6823527 B2 JP6823527 B2 JP 6823527B2 JP 2017080798 A JP2017080798 A JP 2017080798A JP 2017080798 A JP2017080798 A JP 2017080798A JP 6823527 B2 JP6823527 B2 JP 6823527B2
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JP
Japan
Prior art keywords
gas
film
face
layer
treated
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Active
Application number
JP2017080798A
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English (en)
Japanese (ja)
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JP2018182103A5 (enExample
JP2018182103A (ja
Inventor
翔 熊倉
翔 熊倉
雅弘 田端
雅弘 田端
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2017080798A priority Critical patent/JP6823527B2/ja
Priority to TW107112016A priority patent/TWI782975B/zh
Priority to KR1020180042942A priority patent/KR102562634B1/ko
Priority to CN201810329352.XA priority patent/CN108735598B/zh
Priority to US15/952,328 priority patent/US10269578B2/en
Publication of JP2018182103A publication Critical patent/JP2018182103A/ja
Publication of JP2018182103A5 publication Critical patent/JP2018182103A5/ja
Application granted granted Critical
Publication of JP6823527B2 publication Critical patent/JP6823527B2/ja
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    • H10P50/283—
    • H10P50/242—
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6687—
    • H10P14/69215—
    • H10P14/69433—
    • H10P50/267—
    • H10P50/73—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Magnetic Heads (AREA)
JP2017080798A 2017-04-14 2017-04-14 エッチング方法 Active JP6823527B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017080798A JP6823527B2 (ja) 2017-04-14 2017-04-14 エッチング方法
TW107112016A TWI782975B (zh) 2017-04-14 2018-04-09 蝕刻方法
KR1020180042942A KR102562634B1 (ko) 2017-04-14 2018-04-12 에칭 방법
CN201810329352.XA CN108735598B (zh) 2017-04-14 2018-04-13 蚀刻方法
US15/952,328 US10269578B2 (en) 2017-04-14 2018-04-13 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017080798A JP6823527B2 (ja) 2017-04-14 2017-04-14 エッチング方法

Publications (3)

Publication Number Publication Date
JP2018182103A JP2018182103A (ja) 2018-11-15
JP2018182103A5 JP2018182103A5 (enExample) 2019-12-26
JP6823527B2 true JP6823527B2 (ja) 2021-02-03

Family

ID=63790267

Family Applications (1)

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JP2017080798A Active JP6823527B2 (ja) 2017-04-14 2017-04-14 エッチング方法

Country Status (5)

Country Link
US (1) US10269578B2 (enExample)
JP (1) JP6823527B2 (enExample)
KR (1) KR102562634B1 (enExample)
CN (1) CN108735598B (enExample)
TW (1) TWI782975B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US12027375B2 (en) * 2019-02-14 2024-07-02 Lam Research Corporation Selective etch using a sacrificial mask
JP7277225B2 (ja) * 2019-04-08 2023-05-18 東京エレクトロン株式会社 エッチング方法、及び、プラズマ処理装置
JP7398915B2 (ja) * 2019-10-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318576A (ja) * 1993-04-30 1994-11-15 Oki Electric Ind Co Ltd ドライエッチング方法
JP3259529B2 (ja) * 1994-07-11 2002-02-25 ソニー株式会社 選択エッチング方法
JP4123428B2 (ja) 2001-11-30 2008-07-23 東京エレクトロン株式会社 エッチング方法
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
WO2011031949A1 (en) * 2009-09-10 2011-03-17 Lockheed Martin Corporation Graphene nanoelectronic device fabrication
JP4982582B2 (ja) * 2010-03-31 2012-07-25 株式会社東芝 マスクの製造方法
JP2012018989A (ja) * 2010-07-06 2012-01-26 Elpida Memory Inc 半導体装置の製造方法
WO2012008179A1 (ja) * 2010-07-12 2012-01-19 住友精密工業株式会社 エッチング方法
CN103311092B (zh) * 2012-03-12 2015-08-05 中芯国际集成电路制造(上海)有限公司 沟槽的刻蚀方法
US9093389B2 (en) * 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
US9059043B1 (en) * 2014-02-11 2015-06-16 International Business Machines Corporation Fin field effect transistor with self-aligned source/drain regions
KR102233577B1 (ko) * 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
US9633867B2 (en) * 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
KR101702869B1 (ko) * 2015-09-10 2017-02-06 주식회사 케이씨텍 원자층 식각장치
US9972502B2 (en) * 2015-09-11 2018-05-15 Lam Research Corporation Systems and methods for performing in-situ deposition of sidewall image transfer spacers
US9595451B1 (en) * 2015-10-19 2017-03-14 Applied Materials, Inc. Highly selective etching methods for etching dielectric materials
US10115601B2 (en) * 2016-02-03 2018-10-30 Tokyo Electron Limited Selective film formation for raised and recessed features using deposition and etching processes
JP6812284B2 (ja) 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体

Also Published As

Publication number Publication date
TW201903883A (zh) 2019-01-16
TWI782975B (zh) 2022-11-11
KR20180116150A (ko) 2018-10-24
US10269578B2 (en) 2019-04-23
CN108735598B (zh) 2023-01-06
KR102562634B1 (ko) 2023-08-02
US20180301346A1 (en) 2018-10-18
CN108735598A (zh) 2018-11-02
JP2018182103A (ja) 2018-11-15

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