JP6812284B2 - エッチング方法及び記録媒体 - Google Patents
エッチング方法及び記録媒体 Download PDFInfo
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- JP6812284B2 JP6812284B2 JP2017062655A JP2017062655A JP6812284B2 JP 6812284 B2 JP6812284 B2 JP 6812284B2 JP 2017062655 A JP2017062655 A JP 2017062655A JP 2017062655 A JP2017062655 A JP 2017062655A JP 6812284 B2 JP6812284 B2 JP 6812284B2
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- 238000005530 etching Methods 0.000 title claims description 57
- 238000000034 method Methods 0.000 title claims description 39
- 238000012545 processing Methods 0.000 claims description 132
- 239000007789 gas Substances 0.000 claims description 112
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 67
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 67
- 239000007795 chemical reaction product Substances 0.000 claims description 56
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 40
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 40
- 230000004075 alteration Effects 0.000 claims description 36
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- -1 dihydrogen hexafluorosilicate Chemical class 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 238000011282 treatment Methods 0.000 description 99
- 235000012431 wafers Nutrition 0.000 description 97
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 36
- 238000012546 transfer Methods 0.000 description 29
- 230000007246 mechanism Effects 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 21
- 229910001873 dinitrogen Inorganic materials 0.000 description 21
- 229910052786 argon Inorganic materials 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Description
なお、溝Hは、深さDと開口幅Wとの比D/Wが高い構造であり、すなわち、高アスペクト比を有するように形成され、開口幅Wは例えば25nmである。
ここで処理室41には、予めアンモニアガスが供給されているので、フッ化水素ガスを供給することにより、処理室41の雰囲気はフッ化水素ガスとアンモニアガスとを含む混合ガスからなる処理雰囲気にされる。こうして処理室41内のウェハWの表面に混合ガスが供給されることで、ウェハWに対して第1のCOR処理(第1の変質工程)が行われる。
第2のCOR処理におけるその他の処理条件については、第1のCOR処理と同様であることが好ましい。
以上では、溝Hの底壁を構成する熱酸化膜102を変質させることについて説明をしたが、例えば、図8に示すような溝Hの底部の側壁を構成する熱酸化膜102のアンダーカット工程においても本実施形態に係るCOR処理を適用することができる。
まず1つは、コンタクトホールとしての溝Hを充填するポリシリコン膜などの導電部材と素子搭載部100aとの接触面積を大きくし、電気抵抗を下げるためである。
その他の理由は、図10に示すように、ウェハWの形成時にマスクアライメントがずれ、溝Hの素子搭載部100aに対する相対的な位置がずれたとしても、溝H内の上記導電部材と素子搭載部100aとの導通を確保するためである。
一方、比較例では、本実施形態に係る第1のCOR処理すなわち従来のCOR処理とPHT処理のみを行った。比較例において、第1のCOR処理を20秒行い、一連の処理を10回繰り返した。第1のCOR処理における他の処理条件は本実施例と同様とした。
4 PHT処理装置
5 COR処理装置
8 制御コンピュータ
40 チャンバー
41 処理室
61 フッ化水素ガス供給路
62 アンモニアガス供給路
63 アルゴンガス供給路
85 排気路
100 Si層
100a 素子搭載部
101 層間絶縁膜
102 シリコン酸化膜(熱酸化膜)
103 SiN膜
104 反応生成物
105 別の反応生成物
106 素子分離膜(塗布酸化膜)
Claims (9)
- 基板上のシリコン酸化膜のエッチング方法であって、
前記シリコン酸化膜の表面に、ハロゲン元素を含むガスと塩基性ガスとを含有した混合ガスを供給し、前記シリコン酸化膜と前記混合ガスとを化学反応させ、前記シリコン酸化膜を変質させて、水分を含む反応生成物を生成する第1の変質工程と、
前記シリコン酸化膜と前記反応生成物との界面に、前記ハロゲン元素を含むガスを供給し、前記シリコン酸化膜と前記ハロゲン元素を含むガスとを、前記反応生成物に含まれた水分を用いて化学反応させ、前記シリコン酸化膜を変質させて別の反応生成物を生成する第2の変質工程と、
前記第2の変質工程後、前記反応生成物と前記別の反応生成物とを加熱して除去する加熱工程と、を含み、
前記第1の変質工程の開始から前記第2の変質工程の終了まで、変質を行うチャンバー内の圧力を一定にすることを特徴とするシリコン酸化膜のエッチング方法。 - 前記ハロゲン元素を含むガスはフッ化水素であり、前記塩基性ガスはアンモニアガスであることを特徴とする請求項1に記載のエッチング方法。
- 前記別の反応生成物は、ジヒドロゲンヘキサフルオロシリケートであることを特徴とする請求項2に記載のエッチング方法。
- 前記シリコン酸化膜は、前記基板に形成された溝の底部に形成されていることを特徴とする請求項1〜3のいずれか1項に記載のエッチング方法。
- 前記シリコン酸化膜は、前記溝の底壁を構成することを特徴とする請求項4に記載のエッチング方法。
- 前記シリコン酸化膜は、前記溝の底部の側壁を構成することを特徴とする請求項4に記載のエッチング方法。
- 前記シリコン酸化膜は、前記溝の底壁を構成するものと、前記溝の底部の側壁を構成するものとを含むことを特徴とする請求項4に記載のエッチング方法。
- 前記溝の底壁を構成するシリコン酸化膜と、前記溝の底部の側壁を構成するシリコン酸化膜とは、種類が異なることを特徴とする請求項7に記載のエッチング方法。
- 処理システムの制御コンピュータによって実行することが可能なプログラムが記録された記録媒体であって、
前記プログラムは、前記制御コンピュータによって実行されることにより、前記処理システムに、請求項1〜8のいずれかに記載のエッチング方法を行わせるものであることを特徴とする、記録媒体。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017062655A JP6812284B2 (ja) | 2017-03-28 | 2017-03-28 | エッチング方法及び記録媒体 |
KR1020180032956A KR102079440B1 (ko) | 2017-03-28 | 2018-03-22 | 에칭 방법 및 기록 매체 |
TW107110200A TWI760461B (zh) | 2017-03-28 | 2018-03-26 | 蝕刻方法及記錄媒體 |
US15/935,679 US10153172B2 (en) | 2017-03-28 | 2018-03-26 | Etching method and recording medium |
CN201810263465.4A CN108666213B (zh) | 2017-03-28 | 2018-03-28 | 蚀刻方法以及记录介质 |
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JP2017062655A JP6812284B2 (ja) | 2017-03-28 | 2017-03-28 | エッチング方法及び記録媒体 |
Publications (2)
Publication Number | Publication Date |
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JP2018166147A JP2018166147A (ja) | 2018-10-25 |
JP6812284B2 true JP6812284B2 (ja) | 2021-01-13 |
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KR20200063242A (ko) * | 2017-10-23 | 2020-06-04 | 램 리서치 아게 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
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US11171012B1 (en) * | 2020-05-27 | 2021-11-09 | Tokyo Electron Limited | Method and apparatus for formation of protective sidewall layer for bow reduction |
JP7459720B2 (ja) * | 2020-08-11 | 2024-04-02 | 東京エレクトロン株式会社 | シリコン酸化膜をエッチングする方法、装置及びシステム |
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